TGA2575 Ka-Band 3 Watt Power Amplifier Applications Military Radar Communications Product Features TGA2575 Functional Block Diagram Frequency Range: 32.0 - 38.0 GHz Power: 35.5 dBm Psat PAE: 22% Gain: 19 dB Return Loss: 12 dB Bias: Vd = 6 V, Id = 2.1 A, Vg = -0.60 V Typical Dimensions: 5.4 x 4.1 x 0.05 mm Vg 6 Vd 5 TGA2575 4 1 RF Out RF In 3 Vd 2 Vg General Description Bond Pad Configuration TriQuint's TGA2575 is a wideband power amplifier fabricated on TriQuint's production-released 0.15um pwr-pHEMT process. Operating from 32 GHz to 38 GHz, it achieves 35.5 dBm saturated output power, 22% PAE and 19 dB small signal gain over most of the band. Bond Pad # Symbol 1 2, 6 3, 5 4 RF In Vg Vd RF Out Fully matched to 50 ohms, ROHS compliant and with integrated DC blocking caps on both I/O ports, the TGA2575 is ideally suited to support both commercial and defense related opportunities. The TGA2575 is 100% DC and RF tested on-wafer to ensure compliance to performance specifications. Ordering Information Data Sheet: Rev A 8/22/12 (c) 2012 TriQuint Semiconductor, Inc. Part No. ECCN TGA2575 3A001.b.2.d - 1 of 11 - Description Ka-band Power Amplifier Disclaimer: Subject to change without notice Connecting the Digital World to the Global Network(R) TGA2575 Ka-Band 3 Watt Power Amplifier Specifications Absolute Maximum Ratings Recommended Operating Conditions Min Parameter Rating Parameter Drain Voltage,Vd Gate Voltage,Vg Drain to Gate Voltage, Vd-Vg Drain Current, Id Gate Current, Ig Power Dissipation, Pdiss RF Input Power, CW, 50,T = 25C Channel Temperature, Tch Mounting Temperature (30 Seconds) Storage Temperature +6.5 V -5 to 0 V 10 3.8 A -14 to 4.8 mA 21 W 23 dBm 200 oC 320 oC -40 to 150 oC Vd Id Id_drive (Under RF Drive) Vg Typical Max Units 6 2.1 V A 3.3 A -0.60 V Electrical specifications are measured at specified test conditions. Specifications are not guaranteed over all recommended operating conditions. Operation of this device outside the parameter ranges given above may cause permanent damage. These are stress ratings only, and functional operation of the device at these conditions is not implied. Electrical Specifications Test conditions unless otherwise noted: 25C, Vd = 6 V, Id = 2.1 A, Vg = -0.60 V Typical. Parameter Min Operational Frequency Range Gain: 32 - 35 GHz Gain: 36 - 85 GHz Input Return Loss Output Return Loss Output Power @ Saturation: 32 - 35 GHz Output Power @ Saturation: 36 - 38 GHz PAE @ Saturation Data Sheet: Rev A 8/22/12 (c) 2012 TriQuint Semiconductor, Inc. 32 17 15 34.5 33 - 2 of 11 - Typical Max 38 19 17 12 12 35.5 34.5 22 Units GHz dB dB dB dBm % Disclaimer: Subject to change without notice Connecting the Digital World to the Global Network(R) TGA2575 Ka-Band 3 Watt Power Amplifier Specifications (cont.) Thermal and Reliability Information Parameter Condition Rating Thermal Resistance, JC, measured to back of package Tbase = 70 C Tbase = 70 C, Vd = 6 V, Id = 2.1 A, Pdiss = 12.6 W Tbase = 70 C, Vd = 6 V, Id = 3.3 A, Pout = 36 dBm, Pdiss = 15.8 W JC = 6.2C/W Tch = 148C Tm = 1.3 E+6 Hours Tch = 168C Tm = 1.5E+5 Hours Channel Temperature (Tch), and Median Lifetime (Tm) Channel Temperature (Tch), and Median Lifetime (Tm) Under RF Drive Median Lifetime (Tm) vs. Channel Temperature (Tch) Median Lifetime, Tm (Hours) 1.E+15 1.E+14 1.E+13 1.E+12 1.E+11 1.E+10 1.E+09 1.E+08 1.E+07 1.E+06 1.E+05 FET5 1.E+04 25 50 75 100 125 150 175 200 Channel Temperature, Tch (C) Data Sheet: Rev A 8/22/12 (c) 2012 TriQuint Semiconductor, Inc. - 3 of 11 - Disclaimer: Subject to change without notice Connecting the Digital World to the Global Network(R) TGA2575 Ka-Band 3 Watt Power Amplifier Typical Performance S-Parameters vs. Freq. S-Parameters vs. Freq. Vd = 6 V, Id = 2.1 A, Vg = -0.60 V Typical, +25C Vd = 6 V, Id = 2.1 A, Vg = -0.60 V Typical, +25C 16 22 -20 21 -15 20 -10 -20 19 -15 -10 18 -5 17 0 16 5 15 10 15 14 15 4 20 13 20 2 25 12 14 -5 12 0 10 5 8 10 6 25 30 35 Frequency (GHz) 40 31GHz 34GHz 28 35GHz 26 36GHz 37GHz 38GHz 12 14 16 18 20 22 32GHz 18 33GHz 16 34GHz 35GHz 14 36GHz 12 37GHz 10 38GHz 6 24 8 10 12 Input Power (dBm) 3.4 30GHz 3.2 31GHz 3.0 32GHz 30 % Power Added Efficiency Drain Current (A) Vd = 6 V, Id = 2.1 A, Vg = -0.60 V Typical, +25C 33GHz 34GHz 2.6 35GHz 2.4 36GHz 2.2 37GHz 38GHz 2.0 9 11 13 Data Sheet: Rev A 15 17 19 21 Input Power (dBm) 8/22/12 (c) 2012 TriQuint Semiconductor, Inc. 23 14 16 18 20 Input Power (dBm) 22 24 PAE vs. Input Power vs. Freq. Drain Current vs. Input Power vs. Freq. 2.8 40 30GHz 30 10 39 20 33GHz 8 38 31GHz 32 6 34 35 36 37 Frequency (GHz) Vd = 6 V, Id = 2.1 A, Vg = -0.60 V Typical, +25C 32GHz 22 33 22 34 24 32 30GHz Power Gain (dB) 36 31 Power Gain vs. Input Power vs. Freq. Vd = 6 V, Id = 2.1 A, Vg = -0.60 V Typical, +25C 38 25 30 45 Output Power vs. Input Power vs. Freq. Output Power (dBm) -25 Gain IRL ORL Return Loss (dB) Gain (dB) 18 -25 Gain (dB) Gain IRL ORL 20 Return Loss (dB) 22 Vd = 6 V, Id = 2.1 A, Vg = -0.60 V Typical, +25C 30GHz 25 31GHz 32GHz 20 33GHz 15 34GHz 35GHz 10 36GHz 5 37GHz 38GHz 0 25 6 - 4 of 11 - 8 10 12 14 16 18 20 Input Power (dBm) 22 24 Disclaimer: Subject to change without notice Connecting the Digital World to the Global Network(R) TGA2575 Ka-Band 3 Watt Power Amplifier Typical Performance (cont.) Output Power vs. Freq. vs. Input Power PAE vs. Freq. vs. Input Power 38 37 36 35 34 33 32 31 30 29 28 Vd = 6 V, Id = 2.1 A, Vg = -0.60 V Typical, +25C Pin=+23dBm Pin=+22dBm Pin=+21dBm Pin=+20dBm Pin=+19dBm Pin=+18dBm Pin=+17dBm Pin=+16dBm Pin=+15dBm 30 32 Data Sheet: Rev A 34 36 Frequency (GHz) 8/22/12 (c) 2012 TriQuint Semiconductor, Inc. 38 % Power Added Efficiency Output Power (dBm) Vd = 6 V, Id = 2.1 A, Vg = -0.60 V Typical, +25C 35 Pin=+23dBm 30 Pin=+22dBm 25 Pin=+21dBm 20 Pin=+20dBm Pin=+19dBm 15 Pin=+18dBm 10 Pin=+17dBm 5 Pin=+16dBm Pin=+15dBm 0 30 32 34 36 38 Frequency (GHz) - 5 of 11 - Disclaimer: Subject to change without notice Connecting the Digital World to the Global Network(R) TGA2575 Ka-Band 3TGA2575 Watt Power Amplifier Application Circuit Vg 1/ Vd 1/ C1 1000 pF C3 1000 pF C5 0.01 uF 6 5 TGA2575 4 1 RF Out RF In 3 2 C2 1000 pF C4 1000 pF C6 0.01 uF Vg must be biased from both sides (pins 2 and 6) Vd must be biased from both sides (pins 3 and 5) Bias-up Procedure Bias-down Procedure Vg set to -1.5 V Vd set to +6 V Adjust Vg more positive until quiescent Id is 2.1 A. This will be ~ Vg = -0.60 V Apply RF signal to RF Input Turn off RF supply Reduce Vg to -1.5V. Ensure Id ~ 0 mA Turn Vd to 0 V Turn Vg to 0 V 1/ Additional bypass capacitors may be required at this location. The presence and value of these capacitors varies by application. Variables include power supply impedance, power supply stability with reactive loads, and the inductance from the power supply to this assembly. 1 to 47 uF tantalum capacitors are commonly used here. Data Sheet: Rev A 8/22/12 (c) 2012 TriQuint Semiconductor, Inc. - 6 of 11 - Disclaimer: Subject to change without notice Connecting the Digital World to the Global Network(R) TGA2575 TGA2575_EG7644 Ka-Band 3 Watt Power Amplifier Bond Pad Description 6 5 1 4 3 2 Bond Pad Symbol Description 1 2, 6 3, 5 4 RF In Vg Vd RF Out GND Input, matched to 50 ohms. Gate voltage. Drain voltage. Output, matched to 50 ohms. Backside of die. Data Sheet: Rev A 8/22/12 (c) 2012 TriQuint Semiconductor, Inc. - 7 of 11 - Disclaimer: Subject to change without notice Connecting the Digital World to the Global Network(R) TGA2575 Ka-Band 3 Watt Power Amplifier Assembly Drawing Bill of Material Ref Des Value Description C1, C2, C3,C4 C5, C6 100 pF 0.01 uF Cap, 50V, 25%, Single Layer Cap various Cap, 50V, 10%, SMD various Data Sheet: Rev A 8/22/12 (c) 2012 TriQuint Semiconductor, Inc. Manufacturer - 8 of 11 - Part Number Disclaimer: Subject to change without notice Connecting the Digital World to the Global Network(R) TGA2575 Ka-Band 3 Watt Power Amplifier Mechanical Information 3.629 6 5 4.132 0.523 TGA2575_EG7644 5.404 5.295 5.307 2.784 1 2.603 4 0.097 3 2 0.109 0 0.109 0.516 3.627 4.022 0 Unit: millimeters Thickness: 0.05 Die x, y size tolerance: +/- 0.050 Chip edge to bond pad dimensions are shown to center of pad Ground is backside of die Bond Pad 1 2, 6 3, 5 4 Data Sheet: Rev A 8/22/12 (c) 2012 TriQuint Semiconductor, Inc. Symbol Pad Size RF In Vg Vd RF Out 0.126 x 0.202 0.101 x 0.101 0.126 x 0.302 0.126 x 0.202 - 9 of 11 - Disclaimer: Subject to change without notice Connecting the Digital World to the Global Network(R) TGA2575 Ka-Band 3 Watt Power Amplifier Product Compliance Information ESD Information Solderability This part is compliant with EU 2002/95/EC RoHS directive (Restrictions on the Use of Certain Hazardous Substances in Electrical and Electronic Equipment). ESD Rating: Value: Test: Standard: TBD TBD Human Body Model (HBM) JEDEC Standard JESD22-A114 ECCN This product also has the following attributes: Lead Free Halogen Free (Chlorine, Bromine) Antimony Free TBBP-A (C15H12Br402) Free PFOS Free SVHC Free US Department of Commerce 3A001.b.2.d Assembly Notes Component placement and adhesive attachment assembly notes: * Vacuum pencils and/or vacuum collets are the preferred method of pick up. * Air bridges must be avoided during placement. * The force impact is critical during auto placement. * Organic attachment (i.e. epoxy) can be used in low-power applications. * Curing should be done in a convection oven; proper exhaust is a safety concern. Reflow process assembly notes: * Use AuSn (80/20) solder and limit exposure to temperatures above 300C to 3-4 minutes, maximum. * An alloy station or conveyor furnace with reducing atmosphere should be used. * Do not use any kind of flux. * Coefficient of thermal expansion matching is critical for long-term reliability. * Devices must be stored in a dry nitrogen atmosphere. Interconnect process assembly notes: * Thermosonic ball bonding is the preferred interconnect technique. * Force, time, and ultrasonics are critical parameters. * Aluminum wire should not be used. * Devices with small pad sizes should be bonded with 0.0007-inch wire. Data Sheet: Rev A 8/22/12 (c) 2012 TriQuint Semiconductor, Inc. - 10 of 11 - Disclaimer: Subject to change without notice Connecting the Digital World to the Global Network(R) TGA2575 Ka-Band 3 Watt Power Amplifier Contact Information For the latest specifications, additional product information, worldwide sales and distribution locations, and information about TriQuint: Web: www.triquint.com Email: info-sales@tqs.com Tel: Fax: +1.972.994.8465 +1.972.994.8504 For technical questions and application information: Email: info-products@tqs.com Important Notice The information contained herein is believed to be reliable. TriQuint makes no warranties regarding the information contained herein. TriQuint assumes no responsibility or liability whatsoever for any of the information contained herein. TriQuint assumes no responsibility or liability whatsoever for the use of the information contained herein. The information contained herein is provided "AS IS, WHERE IS" and with all faults, and the entire risk associated with such information is entirely with the user. All information contained herein is subject to change without notice. Customers should obtain and verify the latest relevant information before placing orders for TriQuint products. The information contained herein or any use of such information does not grant, explicitly or implicitly, to any party any patent rights, licenses, or any other intellectual property rights, whether with regard to such information itself or anything described by such information. TriQuint products are not warranted or authorized for use as critical components in medical, life-saving, or life-sustaining applications, or other applications where a failure would reasonably be expected to cause severe personal injury or death. Data Sheet: Rev A 8/22/12 (c) 2012 TriQuint Semiconductor, Inc. - 11 of 11 - Disclaimer: Subject to change without notice Connecting the Digital World to the Global Network(R) Mouser Electronics Authorized Distributor Click to View Pricing, Inventory, Delivery & Lifecycle Information: TriQuint: TGA2575