TGA2575
Ka-Band 3 Watt Power Amplifier
Data Sheet: Rev A 8/22/12
- 1 of 11 -
Disclaimer: Subject to change without notice
© 2012 TriQuint Semiconductor, Inc.
Connecting the Digital World to the Global Network®
Applications
Military Radar
Communications
Product Features
Functional Block Diagram
Frequency Range: 32.0 – 38.0 GHz
Power: 35.5 dBm Psat
PAE: 22%
Gain: 19 dB
Return Loss: 12 dB
Bias: Vd = 6 V, Id = 2.1 A, Vg = -0.60 V Typical
Dimensions: 5.4 x 4.1 x 0.05 mm
General Description
Bond Pad Configuration
TriQuint’s TGA2575 is a wideband power amplifier
fabricated on TriQuint’s production-released 0.15um
pwr-pHEMT process. Operating from 32 GHz to 38
GHz, it achieves 35.5 dBm saturated output power, 22%
PAE and 19 dB small signal gain over most of the band.
Fully matched to 50 ohms, ROHS compliant and with
integrated DC blocking caps on both I/O ports, the
TGA2575 is ideally suited to support both commercial
and defense related opportunities.
The TGA2575 is 100% DC and RF tested on-wafer to
ensure compliance to performance specifications.
Bond Pad #
Symbol
1
RF In
2, 6
Vg
3, 5
Vd
4
RF Out
Ordering Information
Part No.
ECCN
Description
TGA2575
3A001.b.2.d
Ka-band Power Amplifier
Vg
Vg
RF In
1
6
TGA2575
2
5
RF Out
4
Vd
Vd
3
TGA2575
TGA2575
Ka-Band 3 Watt Power Amplifier
Data Sheet: Rev A 8/22/12
- 2 of 11 -
Disclaimer: Subject to change without notice
© 2012 TriQuint Semiconductor, Inc.
Connecting the Digital World to the Global Network®
Specifications
Absolute Maximum Ratings
Parameter
Rating
Drain Voltage,Vd
+6.5 V
Gate Voltage,Vg
-5 to 0 V
Drain to Gate Voltage, Vd-Vg
10
Drain Current, Id
3.8 A
Gate Current, Ig
-14 to 4.8 mA
Power Dissipation, Pdiss
21 W
RF Input Power, CW, 50Ω,T = 25ºC
23 dBm
Channel Temperature, Tch
200 oC
Mounting Temperature (30 Seconds)
320 oC
Storage Temperature
-40 to 150 oC
Operation of this device outside the parameter ranges given
above may cause permanent damage. These are stress
ratings only, and functional operation of the device at these
conditions is not implied.
Recommended Operating Conditions
Parameter
Min
Typical
Max
Units
Vd
6
V
Id
2.1
A
Id_drive (Under RF
Drive)
3.3
A
Vg
-0.60
V
Electrical specifications are measured at specified test conditions.
Specifications are not guaranteed over all recommended operating
conditions.
Electrical Specifications
Test conditions unless otherwise noted: 25ºC, Vd = 6 V, Id = 2.1 A, Vg = -0.60 V Typical.
Parameter
Min
Typical
Max
Units
Operational Frequency Range
32
38
GHz
Gain: 32 – 35 GHz
17
19
dB
Gain: 36 – 85 GHz
15
17
Input Return Loss
12
dB
Output Return Loss
12
dB
Output Power @ Saturation: 32 – 35 GHz
34.5
35.5
dBm
Output Power @ Saturation: 36 – 38 GHz
33
34.5
PAE @ Saturation
22
%
TGA2575
Ka-Band 3 Watt Power Amplifier
Data Sheet: Rev A 8/22/12
- 3 of 11 -
Disclaimer: Subject to change without notice
© 2012 TriQuint Semiconductor, Inc.
Connecting the Digital World to the Global Network®
Specifications (cont.)
Thermal and Reliability Information
Parameter
Condition
Rating
Thermal Resistance, θJC, measured to back of package
Tbase = 70 °C
θJC = 6.2°C/W
Channel Temperature (Tch), and Median Lifetime (Tm)
Tbase = 70 °C, Vd = 6 V, Id = 2.1 A,
Pdiss = 12.6 W
Tch = 148°C
Tm = 1.3 E+6 Hours
Channel Temperature (Tch), and Median Lifetime (Tm)
Under RF Drive
Tbase = 70 °C, Vd = 6 V, Id = 3.3 A,
Pout = 36 dBm, Pdiss = 15.8 W
Tch = 168°C
Tm = 1.5E+5 Hours
1.E+04
1.E+05
1.E+06
1.E+07
1.E+08
1.E+09
1.E+10
1.E+11
1.E+12
1.E+13
1.E+14
1.E+15
25 50 75 100 125 150 175 200
Median Lifetime, Tm (Hours)
Channel Temperature, Tch (°C)
Median Lifetime (Tm) vs. Channel Temperature (Tch)
FET5
TGA2575
Ka-Band 3 Watt Power Amplifier
Data Sheet: Rev A 8/22/12
- 4 of 11 -
Disclaimer: Subject to change without notice
© 2012 TriQuint Semiconductor, Inc.
Connecting the Digital World to the Global Network®
Typical Performance
-25
-20
-15
-10
-5
0
5
10
15
20
252
4
6
8
10
12
14
16
18
20
22
25 30 35 40 45
Return Loss (dB)
Gain (dB)
Frequency (GHz)
S-Parameters vs. Freq.
Vd = 6 V, Id = 2.1 A, Vg = -0.60 V Typical, +25°C
Gain
IRL
ORL
-25
-20
-15
-10
-5
0
5
10
15
20
2512
13
14
15
16
17
18
19
20
21
22
30 31 32 33 34 35 36 37 38 39 40
Return Loss (dB)
Gain (dB)
Frequency (GHz)
S-Parameters vs. Freq.
Vd = 6 V, Id = 2.1 A, Vg = -0.60 V Typical, +25°C
Gain
IRL
ORL
22
24
26
28
30
32
34
36
38
6 8 10 12 14 16 18 20 22 24
Output Power (dBm)
Input Power (dBm)
Output Power vs. Input Power vs. Freq.
Vd = 6 V, Id = 2.1 A, Vg = -0.60 V Typical, +25°C
30GHz
31GHz
32GHz
33GHz
34GHz
35GHz
36GHz
37GHz
38GHz
10
12
14
16
18
20
22
6 8 10 12 14 16 18 20 22 24
Power Gain (dB)
Input Power (dBm)
Power Gain vs. Input Power vs. Freq.
Vd = 6 V, Id = 2.1 A, Vg = -0.60 V Typical, +25°C
30GHz
31GHz
32GHz
33GHz
34GHz
35GHz
36GHz
37GHz
38GHz
2.0
2.2
2.4
2.6
2.8
3.0
3.2
3.4
911 13 15 17 19 21 23 25
Drain Current (A)
Input Power (dBm)
Drain Current vs. Input Power vs. Freq.
Vd = 6 V, Id = 2.1 A, Vg = -0.60 V Typical, +25°C
30GHz
31GHz
32GHz
33GHz
34GHz
35GHz
36GHz
37GHz
38GHz
0
5
10
15
20
25
30
6 8 10 12 14 16 18 20 22 24
% Power Added Efficiency
Input Power (dBm)
PAE vs. Input Power vs. Freq.
Vd = 6 V, Id = 2.1 A, Vg = -0.60 V Typical, +25°C
30GHz
31GHz
32GHz
33GHz
34GHz
35GHz
36GHz
37GHz
38GHz
TGA2575
Ka-Band 3 Watt Power Amplifier
Data Sheet: Rev A 8/22/12
- 5 of 11 -
Disclaimer: Subject to change without notice
© 2012 TriQuint Semiconductor, Inc.
Connecting the Digital World to the Global Network®
Typical Performance (cont.)
28
29
30
31
32
33
34
35
36
37
38
30 32 34 36 38
Output Power (dBm)
Frequency (GHz)
Output Power vs. Freq. vs. Input Power
Vd = 6 V, Id = 2.1 A, Vg = -0.60 V Typical, +25°C
Pin=+23dBm
Pin=+22dBm
Pin=+21dBm
Pin=+20dBm
Pin=+19dBm
Pin=+18dBm
Pin=+17dBm
Pin=+16dBm
Pin=+15dBm
0
5
10
15
20
25
30
35
30 32 34 36 38
% Power Added Efficiency
Frequency (GHz)
PAE vs. Freq. vs. Input Power
Vd = 6 V, Id = 2.1 A, Vg = -0.60 V Typical, +25°C
Pin=+23dBm
Pin=+22dBm
Pin=+21dBm
Pin=+20dBm
Pin=+19dBm
Pin=+18dBm
Pin=+17dBm
Pin=+16dBm
Pin=+15dBm
TGA2575
Ka-Band 3 Watt Power Amplifier
Data Sheet: Rev A 8/22/12
- 6 of 11 -
Disclaimer: Subject to change without notice
© 2012 TriQuint Semiconductor, Inc.
Connecting the Digital World to the Global Network®
Application Circuit
Vg must be biased from both sides (pins 2 and 6)
Vd must be biased from both sides (pins 3 and 5)
Bias-up Procedure
Bias-down Procedure
Vg set to -1.5 V
Turn off RF supply
Vd set to +6 V
Reduce Vg to -1.5V. Ensure Id ~ 0 mA
Adjust Vg more positive until quiescent Id is 2.1 A.
This will be ~ Vg = -0.60 V
Turn Vd to 0 V
Apply RF signal to RF Input
Turn Vg to 0 V
1/ Additional bypass capacitors may be required at this location. The presence and value of these capacitors varies by
application. Variables include power supply impedance, power supply stability with reactive loads, and the inductance from the
power supply to this assembly. 1 to 47 uF tantalum capacitors are commonly used here.
RF In
1
6
TGA2575
2
5
RF Out
4
3
TGA2575
C2
1000 pF
C1
1000 pF
Vg 1/
C4
1000 pF C6
0.01 uF
C3
1000 pF C5
0.01 uF
Vd 1/
TGA2575
Ka-Band 3 Watt Power Amplifier
Data Sheet: Rev A 8/22/12
- 7 of 11 -
Disclaimer: Subject to change without notice
© 2012 TriQuint Semiconductor, Inc.
Connecting the Digital World to the Global Network®
Bond Pad Description
Bond Pad
Symbol
Description
1
RF In
Input, matched to 50 ohms.
2, 6
Vg
Gate voltage.
3, 5
Vd
Drain voltage.
4
RF Out
Output, matched to 50 ohms.
GND
Backside of die.
1
23
4
5
6
TGA2575_EG7644
TGA2575
Ka-Band 3 Watt Power Amplifier
Data Sheet: Rev A 8/22/12
- 8 of 11 -
Disclaimer: Subject to change without notice
© 2012 TriQuint Semiconductor, Inc.
Connecting the Digital World to the Global Network®
Assembly Drawing
Bill of Material
Ref Des
Value
Description
Manufacturer
Part Number
C1, C2, C3,C4
100 pF
Cap, 50V, 25%, Single Layer Cap
various
C5, C6
0.01 uF
Cap, 50V, 10%, SMD
various
TGA2575
Ka-Band 3 Watt Power Amplifier
Data Sheet: Rev A 8/22/12
- 9 of 11 -
Disclaimer: Subject to change without notice
© 2012 TriQuint Semiconductor, Inc.
Connecting the Digital World to the Global Network®
Mechanical Information
Unit: millimeters
Thickness: 0.05
Die x, y size tolerance: +/- 0.050
Chip edge to bond pad dimensions are shown to center of pad
Ground is backside of die
Bond Pad
Symbol
Pad Size
1
RF In
0.126 x 0.202
2, 6
Vg
0.101 x 0.101
3, 5
Vd
0.126 x 0.302
4
RF Out
0.126 x 0.202
2.784
0.097
0
4.022
0.109
3.627
0.516
0
2.603
0.109
5.307
5.404 5.295
4.132
3.629
0.523
TGA2575_EG7644
1
23
4
5
6
TGA2575
Ka-Band 3 Watt Power Amplifier
Data Sheet: Rev A 8/22/12
- 10 of 11 -
Disclaimer: Subject to change without notice
© 2012 TriQuint Semiconductor, Inc.
Connecting the Digital World to the Global Network®
Product Compliance Information
ESD Information
ESD Rating: TBD
Value: TBD
Test: Human Body Model (HBM)
Standard: JEDEC Standard JESD22-A114
Solderability
This part is compliant with EU 2002/95/EC RoHS
directive (Restrictions on the Use of Certain Hazardous
Substances in Electrical and Electronic Equipment).
This product also has the following attributes:
Lead Free
Halogen Free (Chlorine, Bromine)
Antimony Free
TBBP-A (C15H12Br402) Free
PFOS Free
SVHC Free
ECCN
US Department of Commerce 3A001.b.2.d
Assembly Notes
Component placement and adhesive attachment assembly notes:
• Vacuum pencils and/or vacuum collets are the preferred method of pick up.
• Air bridges must be avoided during placement.
• The force impact is critical during auto placement.
• Organic attachment (i.e. epoxy) can be used in low-power applications.
• Curing should be done in a convection oven; proper exhaust is a safety concern.
Reflow process assembly notes:
• Use AuSn (80/20) solder and limit exposure to temperatures above 300C to 3-4 minutes, maximum.
• An alloy station or conveyor furnace with reducing atmosphere should be used.
• Do not use any kind of flux.
• Coefficient of thermal expansion matching is critical for long-term reliability.
• Devices must be stored in a dry nitrogen atmosphere.
Interconnect process assembly notes:
• Thermosonic ball bonding is the preferred interconnect technique.
• Force, time, and ultrasonics are critical parameters.
• Aluminum wire should not be used.
• Devices with small pad sizes should be bonded with 0.0007-inch wire.
TGA2575
Ka-Band 3 Watt Power Amplifier
Data Sheet: Rev A 8/22/12
- 11 of 11 -
Disclaimer: Subject to change without notice
© 2012 TriQuint Semiconductor, Inc.
Connecting the Digital World to the Global Network®
Contact Information
For the latest specifications, additional product information, worldwide sales and distribution locations, and information about
TriQuint:
Web: www.triquint.com Tel: +1.972.994.8465
Email: info-sales@tqs.com Fax: +1.972.994.8504
For technical questions and application information:
Email: info-products@tqs.com
Important Notice
The information contained herein is believed to be reliable. TriQuint makes no warranties regarding the information contained
herein. TriQuint assumes no responsibility or liability whatsoever for any of the information contained herein. TriQuint
assumes no responsibility or liability whatsoever for the use of the information contained herein. The information contained
herein is provided "AS IS, WHERE IS" and with all faults, and the entire risk associated with such information is entirely with
the user. All information contained herein is subject to change without notice. Customers should obtain and verify the latest
relevant information before placing orders for TriQuint products. The information contained herein or any use of such
information does not grant, explicitly or implicitly, to any party any patent rights, licenses, or any other intellectual property
rights, whether with regard to such information itself or anything described by such information.
TriQuint products are not warranted or authorized for use as critical components in medical, life-saving, or life-sustaining
applications, or other applications where a failure would reasonably be expected to cause severe personal injury or death.
