©2004 Fairchild Semiconductor Corporation Rev. A, July 2004
NZT749
Absolute Maximum Ratings*
T
a
=25°C unless otherwise noted
* These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
NOTES:
1) These ratings are based on a maximum junction temperature of 150 degrees C.
2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations
Electrical Characteristics
T
a
=25°C unless otherwise noted
* Pulse Test: Pulse Width ≤ 300µs, Duty Cycle ≤ 2.0%
Thermal Charac t eris ti cs
T
a
=25°C unless otherwise noted
Symbol Parameter Value Units
V
CEO
Collector-Emitter Voltage -25 V
V
CBO
Collector-Base Voltage -35 V
V
EBO
Emitter-Base Voltage -5.0 V
I
C
Collector Current (DC) - Continuous -4.0 A
T
J
, T
STG
Operating and Storage Junction Temperature Range - 55 ~ 150 °C
Symbol Parameter Test Condition Min. Max. Units
Off Characteristics
V
(BR)CEO
Collector-Emitter Voltage I
C
= -10mA, I
B
= 0 -25 V
V
(BR)CBO
Collector-Base Voltage I
C
= -100µA, I
E
= 0 -35 V
V
(BR)EBO
Emitter-Base Voltage I
E
= -10µA, I
C
= 0 -5.0 V
I
CBO
Collector Cut-off Current V
CB
= -30V, I
E
= 0 -100 nA
I
EBO
Emitter Cut-off Current V
EB
= -4V, I
C
= 0 -0.1 µA
On Characteristics *
h
FE
DC Current Gain V
CE
= -2.0 V, I
C
= -50mA
V
CE
= -2.0 V, I
C
= -1.0A
V
CE
= -2.0 V, I
C
= -2.0A
70
80
65 300
V
CE(sat)
Collector-Emitter Saturation Voltage I
C
= -1.0A, I
B
= -100mA -0.3 V
V
BE(sat)
Base-Emitter Saturation Voltage I
C
= -1.0A, I
B
= -100mA -1.25 V
V
BE(on)
Base-Emitter On Voltage I
C
= -1.0A, V
CE
= -2.0V -1.0 V
Small Signal Characteristics
f
T
Current gain Bandwidth Product V
CE
= -5.0 V, I
C
= -50mA
f = 100MHz 75 MHz
Symbol Parameter Max. Units
P
D
Total Device Dissipation
Derate above 25°C1.2
9.7 W
mW/°C
R
θJA
Thermal Resistance, Junction to Ambient 103 °C/W
NZT749
PNP Current Driver Transistor
• This device is designed for power amplifier, regulator and switching
circuit where speed is important.
• Sourced from process 5P.
1. Base 2, 4. Collector 3. Emitter
SOT-223
12
4
3
Package Dimensions
NZT749
Dimensions in Millimeters
Rev. A, July 2004©2004 Fairchild Semiconductor Corporation
3.00 ±0.10
7.00 ±0.30
0.65 ±0.20
0.08MAX
3.50 ±0.20
1.60 ±0.20
(0.46)
(0.89)
(0.60) (0.60)
1.75 ±0.20
0.70 ±0.10
4.60 ±0.25
6.50 ±0.20
(0.95) (0.95)
2.30 TYP
0.25
MAX1.80
0°~10°
+0.10
–0.05
0.06 +0.04
–0.02
SOT-223
©2004 Fairchild Semiconductor Corporation Rev. I11
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