Agilent HMPS-282x Series
MiniPak Surface Mount
RF Schottky Barrier Diodes
Data Sheet
Description/Applications
These ultra-miniature products
represent the blending of Agilent
Technologies’ proven semiconduc-
tor and the latest in leadless
packaging. This series of Schottky
diodes is the most consistent and
best all-round device available,
and finds applications in mixing,
detecting, switching, sampling,
clamping and wave shaping at
frequencies up to 6 GHz. The
MiniPak package offers reduced
parasitics when compared to
conventional leaded diodes, and
lower thermal resistance.
Features
• Surface mount MiniPak package
– low height, 0.7 mm (0.028") max.
– small footprint, 1.75 mm2
(0.0028␣ inch2)
• Better thermal conductivity for
higher power dissipation
• Single and dual versions
• Matched diodes for consistent
performance
• Low turn-on voltage (as low as
0.34␣ V at 1 mA)
• Low FIT (Failure in Time) rate*
• Six-sigma quality level
* For more information, see the Surface
Mount Schottky Reliability Data Sheet.
Pin Connections and
Package Marking
3
2
Product code Date code
4
AA
1
Package Lead Code Identification
(Top View)
Single
3
2
4
1
#0
Anti-parallel
3
2
4
1
#2
Parallel
3
2
4
1
#5
The HMPS-282x family of diodes
offers the best all-around choice
for most applications, featuring
low series resistance, low forward
voltage at all current levels and
good RF characteristics.
Note that Agilent’s manufacturing
techniques assure that dice found
in pairs and quads are taken from
adjacent sites on the wafer,
assuring the highest degree of
match.
Notes:
1. Package marking provides orientation and
identification.
2. See “Electrical Specifications” for
appropriate package marking.
2
HMPS-282x Series Absolute Maximum Ratings[1], TC = 25°C
Symbol Parameter Units MiniPak 1412
IfForward Current (1 µs pulse) A 1
PIV Peak Inverse Voltage V 15
TjJunction Temperature °C 150
Tstg Storage Temperature °C -65 to +150
θjc Thermal Resistance[2] °C/W 150
Notes:
1.Operation in excess of any one of these conditions may result in permanent damage to the
device.
2.TC = +25°C, where TC is defined to be the temperature at the package pins where contact is
made to the circuit board.
Electrical Specifications, TC = +25°C, Single Diode[4]
Maximum Maximum
Minimum Maximum Forward Reverse Typical
Part Package Breakdown Forward Voltage Leakage Maximum Dynamic
Number Marking Lead Voltage Voltage VF (V) @ IR (nA) @ Capacitance Resistance
HMPS- Code Code Configuration VBR (V) VF (mV) IF (mA) VR (V) CT (pF) RD (Ω)[4]
2820 L 0 Single 15 340 0.5 10 100 1 1.0 12
2822 K 2 Anti-parallel
2825 J 5 Parallel
Test Conditions IR = 100 µAI
F = 1 mA[1] VF = 0 V IF = 5 mA
f = 1 MHz[2]
Notes:
1.∆VF for diodes in pairs is 15 mV maximum at 1 mA.
2.∆CTO for diodes in pairs is 0.2 pF maximum.
3.Effective carrier lifetime (τ) for all these diodes is 100 ps maximum measured with Krakauer method at 5 mA.
4.RD = RS + 5.2Ω at 25°C and If = 5 mA.
ESD WARNING:
Handling Precautions Should Be Taken To
Avoid Static Discharge.
3
C
j
R
j
R
S
R
j
= 8.33 X 10
-5
nT
I
b
+ I
s
where
I
b
= externally applied bias current in amps
I
s
= saturation current (see table of SPICE parameters)
T
= temperature, °K
n = ideality factor (see table of SPICE parameters)
R
S
= series resistance (see Table of SPICE parameters)
C
j
= junction capacitance (see Table of SPICE parameters)
Linear Equivalent Circuit Model Diode Chip SPICE Parameters
Parameter Units HMPS-282x
BVV15
CJ0 pF 0.7
EGeV 0.60
IBV A 1E-4
ISA 2.2E-8
N 1.08
RSΩ8.0
PBV 0.65
PT2
M 0.5
Linear Circuit Model of the Diode’s Package
30 fF 30 fF
20 fF
20 fF
1.1 nH
Single diode package (HMPx-x8x0)
2
3
1
4
30 fF 30 fF
20 fF
20 fF
12 fF
12 fF
0.5 nH
Anti-parallel diode package (HMPx-x8x2)
2
3
1
4
0.5 nH0.05 nH
0.5 nH
0.05 nH
0.05 nH0.5 nH0.05 nH
30 fF 30 fF
20 fF
20 fF
0.5 nH 0.05 nH
Parallel diode package (HMPx-x8x5)
2
3
1
4
0.5 nH0.05 nH
0.5 nH 0.05 nH0.5 nH0.05 nH
4
HMPS-282x Series Typical Performance
Tc = 25°C (unless otherwise noted), Single Diode
Figure 1. Forward Current vs. Forward
Voltage at Temperatures.
0 0.10 0.20 0.30 0.500.40
I
F
– FORWARD CURRENT (mA)
V
F
– FORWARD VOLTAGE (V)
0.01
10
1
0.1
100 T
A
= +125°C
T
A
= +75°C
T
A
= +25°C
T
A
= –25°C
Figure 2. Reverse Current vs. Reverse Voltage
at Temperatures.
05 15
I
R
– REVERSE CURRENT (nA)
V
R
– REVERSE VOLTAGE (V)
10
1
1000
100
10
100,000
10,000
T
A
= +125°C
T
A
= +75°C
T
A
= +25°C
Figure 3. Total Capacitance vs. Reverse
Voltage.
02 86
C
T
– CAPACITANCE (pF)
V
R
– REVERSE VOLTAGE (V)
4
0
0.6
0.4
0.2
1
0.8
Figure 4. Dynamic Resistance vs. Forward
Current.
0.1 1 100
R
D
– DYNAMIC RESISTANCE (Ω)
I
F
– FORWARD CURRENT (mA)
10
1
10
1000
100
V
F
- FORWARD VOLTAGE (V)
Figure 5. Typical V
f
Match, Series Pairs and
Quads at Mixer Bias Levels.
30
10
1
0.3
30
10
1
0.3
I
F
- FORWARD CURRENT (mA)
∆V
F
- FORWARD VOLTAGE DIFFERENCE (mV)
0.2 0.4 0.6 0.8 1.0 1.2 1.4
I
F
(Left Scale)
∆V
F
(Right Scale)
V
F
- FORWARD VOLTAGE (V)
Figure 6. Typical V
f
Match, Series Pairs at
Detector Bias Levels.
100
10
1
1.0
0.1
I
F
- FORWARD CURRENT (µA)
∆V
F
- FORWARD VOLTAGE DIFFERENCE (mV)
0.10 0.15 0.20 0.25
I
F
(Left Scale)
∆V
F
(Right Scale)
Figure 7. Typical Output Voltage vs. Input
Power, Small Signal Detector Operating at
850 MHz.
-40 -30
18 nH
RF in
3.3 nH
100 pF 100 KΩ
HSMS-282B Vo
0
V
O
– OUTPUT VOLTAGE (V)
P
in
– INPUT POWER (dBm)
-10-20
0.001
0.01
1
0.1
-25°C
+25°C
+75°C
DC bias = 3 µA
Figure 8. Typical Output Voltage vs. Input
Power, Large Signal Detector Operating at
915 MHz.
-20 -10
RF in
100 pF 4.7 KΩ
68 Ω
HSMS-282B Vo
30
V
O
– OUTPUT VOLTAGE (V)
P
in
– INPUT POWER (dBm)
10 200
1E-005
0.0001
0.001
10
0.1
1
0.01
+25°C
LOCAL OSCILLATOR POWER (dBm)
Figure 9. Typical Conversion Loss vs. L.O.
Drive, 2.0 GHz (Ref AN997).
CONVERSION LOSS (dB)
12
10
9
8
7
6
2068104
5
Assembly Information
The MiniPak diode is mounted to
the PCB or microstrip board using
the pad pattern shown in
Figure␣ 10.
0.4 0.4
0.3
0.5
0.3
0.5
Figure 10. PCB Pad Layout, MiniPak
(dimensions in mm).
This mounting pad pattern is
satisfactory for most applications.
However, there are applications
where a high degree of isolation is
required between one diode and
the other is required. For such
applications, the mounting pad
pattern of Figure 11 is
recommended.
2.60
0.40
0.20
0.40 mm via hole
(4 places)
0.8 2.40
Figure 11. PCB Pad Layout, High Isolation
MiniPak (dimensions in mm).
This pattern uses four via holes,
connecting the crossed ground
strip pattern to the ground plane
of the board.
SMT Assembly
Reliable assembly of surface
mount components is a complex
process that involves many
material, process, and equipment
factors, including: method of
heating (e.g., IR or vapor phase
reflow, wave soldering, etc.)
circuit board material, conductor
thickness and pattern, type of
solder alloy, and the thermal
conductivity and thermal mass of
components. Components with a
low mass, such as the MiniPak
package, will reach solder reflow
temperatures faster than those
with a greater mass.
Agilent’s diodes have been quali-
fied to the time-temperature
profile shown in Figure 12. This
profile is representative of an IR
reflow type of surface mount
assembly process.
After ramping up from room
temperature, the circuit board
with components attached to it
(held in place with solder paste)
passes through one or more
preheat zones. The preheat zones
increase the temperature of the
board and components to prevent
thermal shock and begin evaporat-
ing solvents from the solder paste.
The reflow zone briefly elevates
the temperature sufficiently to
produce a reflow of the solder.
The rates of change of tempera-
ture for the ramp-up and cool-
down zones are chosen to be low
enough to not cause deformation
of the board or damage to compo-
nents due to thermal shock. The
maximum temperature in the
reflow zone (TMAX) should not
exceed 255°C.
These parameters are typical for a
surface mount assembly process
for Agilent diodes. As a general
guideline, the circuit board and
components should be exposed
only to the minimum temperatures
and times necessary to achieve a
uniform reflow of solder.
TIME (seconds)
TEMPERATURE (°C)
0
0
50
100
150
200
221
300
250
350
60 9030
Preheat 130–170°C
Min. 60 s
Max. 150 s
Reflow Time
Min. 60 s
Max. 90 s
Peak Temperature
Min. 240°C
Max. 255°C
150 180 210 240 270 300 360120 330
Figure 12. Surface Mount Assembly Temperature Profile.
6
MiniPak Outline Drawing
1.44 (0.058)
1.40 (0.056)
Top view
Side view
Bottom view
1.20 (0.048)
1.16 (0.046)
0.70 (0.028)
0.58 (0.023)
1.12 (0.045)
1.08 (0.043)
3
2
4
1
0.82 (0.033)
0.78 (0.031)
0.32 (0.013)
0.28 (0.011)
-0.07 (-0.003)
-0.03 (-0.001)
0.00
-0.07 (-0.003)
-0.03 (-0.001)
0.42 (0.017)
0.38 (0.015)
0.92 (0.037)
0.88 (0.035)
1.32 (0.053)
1.28 (0.051)
0.00
7
Device Orientation
Tape Dimensions and Product Orientation
For Outline 4T (MiniPak 1412)
USER
FEED
DIRECTION
COVER TAPE
CARRIER
TAPE
REEL
END VIEW
8 mm
4 mm
TOP VIEW
AA
AA
AA
AA
Note: “AA” represents package marking code. Package marking is
right side up with carrier tape perforations at top. Conforms to
Electronic Industries RS-481, “Taping of Surface Mounted
Components for Automated Placement.” Standard quantity is 3,000
devices per reel.
P
P
0
P
2
FW
C
D
1
D
E
A
0
5° MAX.
t
1
(CARRIER TAPE THICKNESS) T
t
(COVER TAPE THICKNESS)
5° MAX.
B
0
K
0
DESCRIPTION SYMBOL SIZE (mm) SIZE (INCHES)
LENGTH
WIDTH
DEPTH
PITCH
BOTTOM HOLE DIAMETER
A
0
B
0
K
0
P
D
1
1.40 ± 0.05
1.63 ± 0.05
0.80 ± 0.05
4.00 ± 0.10
0.80 ± 0.05
0.055 ± 0.002
0.064 ± 0.002
0.031 ± 0.002
0.157 ± 0.004
0.031 ± 0.002
CAVITY
DIAMETER
PITCH
POSITION
D
P
0
E
1.50 ± 0.10
4.00 ± 0.10
1.75 ± 0.10
0.060 ± 0.004
0.157 ± 0.004
0.069 ± 0.004
PERFORATION
WIDTH
THICKNESS W
t
1
8.00 + 0.30 - 0.10
0.254 ± 0.02 0.315 + 0.012 - 0.004
0.010 ± 0.001
CARRIER TAPE
CAVITY TO PERFORATION
(WIDTH DIRECTION)
CAVITY TO PERFORATION
(LENGTH DIRECTION)
F
P
2
3.50 ± 0.05
2.00 ± 0.05
0.138 ± 0.002
0.079 ± 0.002
DISTANCE
WIDTH
TAPE THICKNESS C
T
t
5.40 ± 0.10
0.062 ± 0.001 0.213 ± 0.004
0.002 ± 0.00004
COVER TAPE
www.semiconductor.agilent.com
Data subject to change.
Copyright © 2001 Agilent Technologies, Inc.
January 22, 2001
5988-1551EN
