TUENMUTHAATUUUAH 112 195.1 PHASE CONTROL SCRs__,, 301 .5 TO 5 AMPERES GE TYPE C203 cs c?7 - JEDEC 2N5060-64 2N2322-29 2N2344-48 2N1595-99,A ELECTRICAL SPECIFICATIONS VOLTAGE RANGE - 25-400 25-200 FORWARD CONDUCTION I+( Rms) Max. RMS on-state current (A) x 1.6 1.6 1 average on-state current @ 1 50 1.0 1.0 T(AV} conduction (A) @ T @ 85C @ 55C Max. one cycle, non-repetitive tsm current (A) 18 % Pt > 1.5 msec {A? sec} peak on-state voltage Cc, rated ( Max. internal resistance, dc 10 Com) 0.5 2.2 Max. holding currant @ 25C (mA) 2 Typical turn-off time (usec! @ max. T) 40 Maximum turn-off time (usee @ 110C) - tg +t, Typical turn-on time (usec @ 110C) : 1.4 di/dt current 50 T Junction operating temperature range 65 to 125 65 to 125 ~65 to 100 40 to 110 40 to 110 BLOCKING Typical criticat rate-of-rise of off-state dv/dt voltage, exponential to rated Vogm @ max. rated Ty (V/usec) FIRING l gate current to trigger ST @ 65C @ c @ 25C Max. required gate voltage to trigger @ -65C @ c @ ae Min. required gate voltage to trigger Vet @ 110C @ 125C VOLTAGE TYPES Repetitive Peak Forward and Reverse Voltages 15 _ c108a1 25 2N2344 - _ 30 - clo6y1 C1081 50 - 2N2345 C106F 1 C108F1 60 c103YY - - ~ 100 C103A 2N2346 C106A1 C108A1 CSA 150 C5G 2N2347 - - 200 C5B 2N2348 C106B1 C108B1 250 2N2327 CSH 300 C106C1 c108Ct 400 C10601 c10801 500 C1IO6Et C108E1 600 C106M1 c108M1 PACKAGE OUTLINE NO. 173 173 JAN & JANTX types available. t. 2N885-89 available 20 MA max. IGr. 2. 2N2322A-28A available 20 mA max. |g. 138SCR 2N1595-99 2N929 SEE GES929 2N930 SEE GES930 The 2N1595 series of Silicon Controlled Rectifiers are planar-passivated, all-diffused, three junction, reverse blocking triode thyristors for low power switching and con- trol applications. The 2N2322 series, which is also available, offers additional maximum specified electrical parameters. @ Painted external surface for maximum heat dissipation @ Single-ended package, ideal for printed circuit applications @ All-welded construction @ All-diffused, planar passivated @ Glass-to-metal seals MAXIMUM ALLOWABLE RATINGS REPETITIVE PEAK "REPETITIVE PEAK | OFF-STATE VOLTAGE, _ REVERSE VOLTAGE, TYPE Vona(l) ee 2N1595 50 Volts * 500 Volts 50 Volts * 2N1596 100 Volts* 500 Volts 100 Volts* 2N1597 200 Volts* 500 Volts 200 Volts * 2N1598 300 Volts* 500 Volts 300 Volts* 2N1599 400 Volts* 500 Volts 400 Volts* (1) Applies for 1000 ohms maximum, connected gate-to-cathode. RMS On-State Current, Ipirais) oe eee teens 1.6 Amperes (all conduction angles) Average On-State Current, Tncavy oc eee tent e en eee Depends on conduction angle (see Charts 3, 4, 5 and 6) Peak One-Cycle Surge (Non-rep) On-State Current, Ipsum... 2-2. ee eee nee 15 Amperes* Peak Gate Power Dissipation, Pay 2.0... ee eee ee nee 0.1 Watts Average Gate Power Dissipation, Pecay) oo. ec ee eee tet eet eens 0.01 Watts Peak Positive Gate Current, Igy... eee eee ee ee ene eee tees 0.1 Amperes Peak Positive Gate Voltage, Vay... ee ee nee ee tee eee eee tenes 6 Volts Peak Negative Gate Voltage, Van... 0. ccc ne nen ee eee eee 6 Volts Storage Temperature, Tara... ccc ee eee tee een ene tnt eee 65C to +150C* Operating Temperature, Ty 0.02... ete ee ete eas 65C to +150C * Indicates data included in JEDEC type number registration. 314v supply leg > 1000 OHMS 12 OHMS D1 6V | (Conforms to JEDEC TO-5 Package Outline) 260 4 si.500 -240 100 MIN. i t OUTLINE DRAWING MIN. 1 NOTE 1: THIS ZONE IS CONTROLLED FOR AUTO- MATIC HANDLING. THE VARIATION IN ACTUAL * 37 os 335 325 ae 4 LEADS t DIAMETER WITHIN THIS ZONE SHALL NOT EXCEED .010. NCTE 2: MEASURED FROM MAX. DIAMETER OF THE ACTUAL DEVICE. ANODE LEAD (GROUNDED TO HOUSING) OI7 DIA. t _ __ .200 -+ T f TRUE DIA .210 MAX _ cl 190 MIN ~ 03) +004 GATE 4 +.002 OIT "901 CATHODE - Co (NOTE 3) 045 MAX. 029 MIN. NOTE 3: THE SPECIFIED LEAD DIAMETER APPLIES = (NOTE. 2) L IN THE ZONE BETWEEN 050 AND 250 FROM THE BASE SEAT, BETWEEN 250 AND 1.5 MAX- as +3 IMUM OF 021 DIAMETER IS HELD. OUTSIDE OF ae THESE ZONES THE LEAD DIAMETER IS NOT CONTROLLED. LEADS MAY BE INSERTED. WITHOUT DAMAGE. IN 031 HOLES WHILE DEVICE ENTERS 371 HOLE CONCENTRIC WITH LEAD HOLE CIRCLE. APROX WEIGHT: 05 07 ALL DIMENSIONS IN (NCHES Peak Off-State Toru pA DRM View Rated volts peak, Rex and & 1000 ohms. Reverse Current Tara 2.0 10 Ty = +25C 100 | 1000* To = +125C D.C. Gate Trigger} Ics? | 0.9 10* | mAde | Ty = +25C, Vy = 6 Vde, Ry, = 12 ohms Current D.C. Gate Trigger Vor 0.6 3.0* Vde | Ty = +25C, Vp = 6 Vde, Ry, = 12 ohms Voltage Peak On-State Vom _ 1.25 2.0* | Volts | T. = +25C, In, = 1.0 A peak, 1 msec. Voltage wide pulse. Duty cycle =2%. Holding Current Tu 1.0 mAdc } To = +25C, Anode Source Voltage = 12 Vde, Rex = 1000 ohms. Circuit ty 40 _ psec | Ty = +125C, Inv = 1.0 A peak. Commutated Rectangular current pulse, 50 psec duration. Turn-Off Time Rate of rise of current < 10A/j,sec. Commutation rate = 5 A/ysec. Peak reverse voltage = Rated Vpry volts max. , Reverse voltage at end of turn-off time interval 15 volts. Repetition rate = 60 pps. Rate of rise of re-applied off-state voltage (dv/dt) = 20 V/,sec. Off-state voltage = Rated Vory volts. Gate bias during turn-off time interval = 0 volts, 106 ohms. Turn-On tatt, | 1.2 psec | To = +25C, Vp = Rated Vorx value. Time Tey = 1.0 A. Gate trigger pulse = 6 volts, 300 ohms, 5 usec wide, 0.1 sec rise time. Gate bias = 0 volts, 300 ohms. * Indicates data included in JEDEC type number registration. NOTE: (1) Is is defined in the circuit below: 315[2n1595.99 | 10 JUNCTION TEMPERATURE 125C 50 1.0 NOTE: 1000 OHM RESISTOR CONNECTED FROM w GATE TO CATHODE. E 40 Ez van g Ee wi OW 50 a es = oz a Wo 1 ol ae 5 We 20 z >S e ey & 2 5 2 3 NOTE: VOLTAGE Ba 125C ww MEASURED AT POINT we 10 @ ON LEADS 1/2 INCH Zo 5 FROM BOTTOM OF 5 25C 2 CASE. <x S 0.01 & Oo o | 2 0 10 20 30 40 50 60 70 80 30 100 2 INSTANTANEOUS APPLIED VOLTAGE (PER CENT OF RATED VOLTAGE) w z 2. TYPICAL OFF-STATE AND REVERSE BLOCKING CHARACTERISTICS z zx n z 0.001 BREAKOVER VOLTAGE WITH ZERO GATE SIGNAL 0 Lo 2.0 3.0 4.0 INSTANTANEOUS ON ~STATE VOLTAGE -VOLTS 1. TYPICAL ON-STATE CHARACTERISTICS NOTES: (1} RESISTIVE OR INOUCTIVE LOAD, 50 TO 400 Hz. (2) RATINGS DERIVED FOR 0.01 eo WATT AVERAGE GATE POWER. 130 4 (3) 125C JUNCTION TEMPERATURE. > w 130 (20 S / & 120 W pi t 0 eS pe i 5 e Swaa ae O iso : to = 100 S =" CONDUCTION 7 r P| ION 100 & 90 N N RN t ANGLE 5 80 S _ z 80) 160 | aoe hace | pc = | w 80 + + 80 3 t {I 4 oO 70 + 2 70 4 NOTE: (1) RESISTIVE OR INDUCTIVE LOAD, 50 TO 400 Hz. = m 60 (2) RATINGS DERIVED FOR 0.01 WATT AVERAGE GATE POWER. 60 = (3) 125 C JUNCTION TEMPERATURE. Z 50 Sg 50 (4) CASE TEMPERATURE MEASURED AT A POINT IN THE = 3 CENTER OF THE BOTTOM OF THE CASE. 5 40 < 40 = = % 30 4 2 30 = ! od oe. = 20 20 180 10 CONDUCTION 10 fe} oO Ol 02 0.3 0.4 05 0.6 0 0.2 0.4 0.6 0.8 1.0 1.2 1a 1.6 AVERAGE ON-STATE CURRENT-AMPERES, AVERAGE ON-STATE CURRENT ~ AMPERES 4. MAXIMUM ALLOWABLE 3. MAXIMUM ALLOWABLE CASE TEMPERATURE AMBIENT TEMPERATURE (150C Junction Temp.) (125C Junction Temp.) 316Charts 5 and 6 apply to latching applications where SCR need not block off-state voltage after being turned on, since the Viry specification does not apply above + 125C junction temperature. SCR will again block rated off-state voltage after junction temperature drops below + 125C. 150 2 Ct 4 140 ; #50 SSSS85 bo ! 5 SIN Pp or Lt 180 = 120 IN a CONDUCTION | NN SSO | ANGLE 110 Ww F Boel 6oe| an] 120) aoe pe 4 100 4 < 90 Ww 80 a = 70 8 3 60 * 50 NOTES : (1) RESISTIVE OR INDUCTIVE LOAD, 50 TO 400 Hz. = (2) RATINGS DERIVED FOR 0.01 WATT AVERAGE GATE POWER 2 (3) 150C JUNCTION TEMPERATURE. a L (4) CASE TEMPERATURE MEASURED AT A POINT IN THE = CENTER OF THE BOTTOM OF THE CASE. 0 hoilitli ta tir yu ry ty 0 0.2 0.4 0.6 08 1.0 12 14 16 AVERAGE ON-STATE CURRENT- AMPERES 5. MAXIMUM ALLOWABLE CASE TEMPERATURE (125C Junction Temp.) NOTE: (1) RESISTIVE OR INDUCTIVE LOAD, 50 TO 400 Hz. (2) RATINGS DERIVED FOR 0.01 WATT AVERAGE GATE POWER. 150C JUNCTION TEMPERATURE 80 120 1d 100 930 80 70 60 ; MAXIMUM ALLOWABLE AMBIENT TEMPERATURE C 50 o 40 T~ conDUCTION 0 ANGLE oO a 0.1 02 O38 O04 OF O68 O7 AVERAGE ON-STATE CURRENT-AMPERES 6. MAXIMUM ALLOWABLE AMBIENT TEMPERATURE (150C Junction Temp.) 317