2SK3526-01L,S,SJ FUJI POWER MOSFET 200304 N-CHANNEL SILICON POWER MOSFET Super FAP-G Series Outline Drawings [mm] Features High speed switching Low on-resistance No secondary breadown Low driving power Avalanche-proof P4 Applications Switching regulators UPS (Uninterruptible Power Supply) DC-DC converters Maximum ratings and characteristicAbsolute maximum ratings (Tc=25C unless otherwise specified) Item Drain-source voltage Continuous drain current Pulsed drain current Gate-source voltage Repetitive or non-repetitive Maximum Avalanche Energy Maximum Drain-Source dV/dt Peak Diode Recovery dV/dt Max. power dissipation Symbol V DS ID ID(puls] VGS IAR *2 EAS *1 dVDS/dt *4 dV/dt *3 PD Ta=25C Tc=25C Tch Tstg Ratings 600 8 32 30 8 145.6 20 5 1.67 135 +150 Operating and storage -55 to +150 temperature range *1 L=4.2mH, Vcc=60V, See to Avalanche Energy Graph *2 Tch < =150C *3 IF < *4 VDS < = BVDSS, Tch < = 150C = -ID, -di/dt=50A/s, Vcc < = 600V Unit V A A V A mJ kV/s kV/s W Drain(D) Gate(G) Source(S) C C Electrical characteristics (Tc =25C unless otherwise specified) Item Drain-source breakdown voltaget Gate threshold voltage Zero gate voltage drain current Gate-source leakage current Drain-source on-state resistance Forward transcondutance Input capacitance Output capacitance Reverse transfer capacitance Turn-on time ton Turn-off time toff Total Gate Charge Gate-Source Charge Gate-Drain Charge Avalanche capability Diode forward on-voltage Reverse recovery time Reverse recovery charge Symbol V(BR)DSS VGS(th) IDSS IGSS RDS(on) gfs Ciss Coss Crss td(on) tr td(off) tf QG QGS QGD IAV V SD t rr Qrr Min. Test Conditions ID= 250A VGS=0V ID= 250A VDS=VGS VDS=600V VGS=0V VDS=480V VGS=0V VGS=30V VDS=0V ID=3A VGS=10V Typ. 600 3.0 Tch=25C Tch=125C ID=3A VDS=25V VDS =25V VGS=0V f=1MHz VCC=300V ID=3A VGS=10V 3 RGS=10 V CC=300V ID=6A VGS=10V L=4.2mH Tch=25C IF=6A VGS=0V Tch=25C IF=6A VGS=0V -di/dt=100A/s Tch=25C 10 0.93 6 750 100 4.0 14 9 24 7 20 8.5 5.5 Max. 5.0 25 250 100 1.20 1130 150 6.0 21 14 36 10.5 30 13 8.5 8 1.00 0.7 3.5 1.50 Units V V A nA S pF ns nC A V s C Thermalcharacteristics Item Thermal resistance Symbol Rth(ch-c) Rth(ch-a) Test Conditions channel to case channel to ambient http://store.iiic.cc/ Min. Typ. Max. 0.926 75.0 Units C/W C/W 1 2SK3526-01L,S,SJ FUJI POWER MOSFET Characteristics 200 Typical Output Characteristics Allowable Power Dissipation PD=f(Tc) ID=f(VDS):80s Pulse test,Tch=25C 18 16 20V 14 150 10V 8V 12 ID [A] PD [W] 7.5V 100 10 8 7.0V 6 50 4 VGS=6.5V 2 0 0 0 25 50 75 100 125 150 0 2 4 6 8 10 12 14 16 18 20 22 24 26 28 30 Tc [C] VDS [V] Typical Transfer Characteristic Typical Transconductance ID=f(VGS):80s Pulse test, VDS=25V,Tch=25C gfs=f(ID):80s Pulse test, VDS=25V,Tch=25C 100 10 gfs [S] ID[A] 10 1 1 0.1 0.1 0 1 2 3 4 5 6 7 8 9 0.1 10 1 VGS[V] Typical Drain-Source on-state Resistance RDS(on)=f(ID):80s Pulse test, Tch=25C 2.6 3.0 VGS=6.5V 2.4 Drain-Source On-state Resistance RDS(on)=f(Tch):ID=3A,VGS=10V 7.0V 7.5V 2.2 2.5 2.0 8V 1.8 10V 2.0 RDS(on) [ ] RDS(on) [ ] 10 ID [A] 20V 1.6 1.4 1.2 1.0 max. 1.5 typ. 1.0 0.8 0.6 0.5 0.4 0.2 0.0 0.0 0 2 4 6 8 10 12 14 16 18 -50 -25 0 25 50 75 100 125 150 Tch [C] ID [A] http://store.iiic.cc/ 2 2SK3526-01L,S,SJ FUJI POWER MOSFET Gate Threshold Voltage vs. Tch Typical Gate Charge Characteristics VGS(th)=f(Tch):VDS=VGS,ID=250A VGS=f(Qg):ID=3A, Tch=25C 7.0 24 6.5 22 6.0 20 Vcc= 120V 18 300V 5.5 max. 4.5 16 4.0 14 VGS [V] VGS(th) [V] 5.0 3.5 min. 3.0 480V 12 10 2.5 8 2.0 6 1.5 4 1.0 2 0.5 0.0 0 -50 -25 0 25 50 75 100 125 150 0 10 20 Tch [C] 40 50 60 Typical Forward Characteristics of Reverse Diode Typical Capacitance C=f(VDS):VGS=0V,f=1MHz 10n 30 Qg [nC] 100 IF=f(VSD):80s Pulse test,Tch=25C Ciss 1n 100p IF [A] C [F] 10 Coss 1 10p Crss 0.1 0.00 1p 10 -1 10 0 10 1 10 2 10 3 0.25 0.50 0.75 Typical Switching Characteristics vs. ID t=f(ID):Vcc=300V, VGS=10V, RG=10 10 350 1.50 1.75 2.00 300 IAS=4A 250 IAS=5A 2 tr 1 tf td(on) EAS [mJ] t [ns] 1.25 Maximum Avalanche Energy vs. starting Tch EAS=f(starting Tch):Vcc=60V td(off) 10 1.00 VSD [V] VDS [V] 200 IAS=8A 150 100 50 10 0 0 10 0 10 1 0 25 50 75 100 125 150 starting Tch [C] ID [A] http://store.iiic.cc/ 3 Avalanche Current I AV [A] 2SK3526-01L,S,SJ 10 2 10 1 10 0 FUJI POWER MOSFET Maximum Avalanche Current Pulsewidth IAV=f(tAV):starting Tch=25C,Vcc=60V Single Pulse 10 -1 -2 10 -8 10 10 -7 10 -6 10 -5 10 -4 10 -3 10 -2 Zth(ch-c) [C/W] tAV [sec] 10 1 10 0 10 -1 10 -2 10 -3 Maximum Transient Thermal Impedance Zth(ch-c)=f(t):D=0 10 -6 10 -5 10 -4 10 -3 10 -2 10 -1 10 0 t [sec] Outline Drawings (mm) Type(L) Type(S) Type(SJ) 4 1 2 3 1 4 2 3 1 2 3 1 2 3 http://www.fujielectric.co.jp/denshi/scd/ http://store.iiic.cc/ 4