MBR(F,B)3035CT, MBR(F,B)3045CT www.vishay.com Vishay General Semiconductor Dual Common Cathode Schottky Rectifier FEATURES TO-220AB * Guardring for overvoltage protection ITO-220AB * Low power loss, high efficiency * Low forward voltage drop * High forward surge capability * High frequency operation 2 MBR3035CT MBR3045CT 3 1 PIN 1 PIN 2 PIN 3 CASE MBRF3035CT MBRF3045CT PIN 1 1 2 3 PIN 2 * Material categorization: For definitions of compliance please see www.vishay.com/doc?99912 TYPICAL APPLICATIONS 2 For use in low voltage, high frequency rectifier of switching mode power supplies, freewheeling diodes, DC/DC converters and polarity protection application. 1 MBRB3035CT MBRB3045CT PIN 2 * Solder bath temperature 275 C maximum, 10 s, per JESD 22-B106 (for TO-220AB and ITO-220AB package) * AEC-Q101 qualified PIN 3 TO-263AB K PIN 1 * Meets MSL level 1, per J-STD-020, LF maximum peak of 245 C (for TO-263AB package) K HEATSINK MECHANICAL DATA Case: TO-220AB, ITO-220AB, TO-263AB PRIMARY CHARACTERISTICS IF(AV) 15 A x 2 VRRM 35 V, 45 V IFSM 200 A VF 0.60 V TJ max. 150 C Molding compound meets UL 94 V-0 flammability rating Base P/N-E3 - RoHS-compliant, commercial grade Base P/NHE3 - RoHS-compliant, AEC-Q101 qualified Terminals: Matte tin plated leads, solderable per J-STD-002 and JESD 22-B102 E3 suffix meets JESD 201 class 1A whisker test, HE3 suffix meets JESD 201 class 2 whisker test Polarity: As marked Mounting Torque: 10 in-lbs maximum MAXIMUM RATINGS (TC = 25 C unless otherwise noted) SYMBOL MBR3035CT MBR3045CT Maximum repetitive peak reverse voltage VRRM 35 45 Working peak reverse voltage VRWM 35 45 VDC 35 PARAMETER Maximum DC blocking voltage Maximum average forward rectified current total device per diode Peak forward surge current 8.3 ms single half sine-wave superimposed on rated load per diode IF(AV) IFSM 45 15 200 IRRM 2.0 Voltage rate of change (rated VR) dV/dt 10 000 TJ - 65 to + 150 Storage temperature range TSTG - 65 to + 175 Isolation voltage (ITO-220AB only) from terminal to heatsink t = 1 min VAC 1500 Revision: 27-Jun-12 V 30 Peak repetitive reverse current per diode at tp = 2.0 s, 1 kHz Operating junction temperature range UNIT A V/s C V Document Number: 88677 1 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 MBR(F,B)3035CT, MBR(F,B)3045CT www.vishay.com Vishay General Semiconductor ELECTRICAL CHARACTERISTICS (TC = 25 C unless otherwise noted) PARAMETER SYMBOL VF (1) Maximum instantaneous forward voltage per diode Maximum instantaneous reverse current at DC blocking voltage per diode IR (1) TEST CONDITIONS VALUE IF = 20 A TC = 125C 0.60 IF = 30 A TC = 25C 0.76 IF = 30 A TC = 125C 0.72 TJ = 25 C 1.0 TJ = 125 C 60 Rated VR UNIT V mA Notes (1) Pulse test: 300 s pulse width, 1 % duty cycle (2) Pulse test: Pulse width 40 ms THERMAL CHARACTERISTICS (TC = 25 C unless otherwise noted) PARAMETER Typical thermal resistance per diode SYMBOL MBR MBRF MBRB UNIT RJC 1.5 4.5 1.5 C/W ORDERING INFORMATION (Example) PACKAGE UNIT WEIGHT (g) PREFERRED P/N PACKAGE CODE BASE QUANTITY DELIVERY MODE TO-220AB MBR3045CT-E3/45 1.85 45 50/tube Tube ITO-220AB MBRF3045CT-E3/45 1.99 45 50/tube Tube TO-263AB MBRB3045CT-E3/45 1.35 45 50/tube Tube TO-263AB MBRB3045CT-E3/81 1.35 81 800/reel Tape and reel TO-220AB MBR3045CTHE3/45 (1) 1.85 45 50/tube Tube ITO-220AB MBRF3045CTHE3/45 1) 50/tube Tube 1.99 45 TO-263AB MBRB3045CTHE3/45 (1) 1.35 45 50/tube Tube TO-263AB MBRB3045CTHE3/81 (1) 1.35 81 800/reel Tape and reel Note (1) AEC-Q101 qualified Revision: 27-Jun-12 Document Number: 88677 2 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 MBR(F,B)3035CT, MBR(F,B)3045CT www.vishay.com Vishay General Semiconductor RATINGS AND CHARACTERISTICS CURVES (TA = 25 C unless otherwise noted) 30 Instantaneous Reverse Current (mA) 100 Average Forward Current (A) Resistive or Inductive Load 24 18 12 6 TJ = 125 C 1.0 TJ = 75 C 0.1 0.01 TJ = 25 C 0.001 0 50 0 150 100 0 20 40 60 80 100 Case Temperature (C) Percent of Rated Peak Reverse Voltage (%) Fig. 1 - Forward Current Derating Curve Fig. 4 - Typical Reverse Characteristics Per Diode 300 10 000 TJ = TJ Max. 8.3 ms Single Half Sine-Wave 250 Junction Capacitance (pF) Peak Forward Surge Current (A) 10 200 150 100 50 TJ = 25 C f = 1.0 MHz Vsig = 50 mVp-p 1000 100 0 1 0.1 100 10 1 10 100 Number of Cycles at 60 Hz Reverse Voltage (V) Fig. 2 - Maximum Non-Repetitive Peak Forward Surge Current Per Diode Fig. 5 - Typical Junction Capacitance Per Diode 100 Transient Thermal Impedance (C/W) Instantaneous Forward Current (A) 100 TJ = 150 C 10 1.0 TJ = 25 C 0.1 0.01 0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 10 1 0.1 0.01 0.1 1 10 100 Instantaneous Forward Voltage (V) t - Pulse Duration (s) Fig. 3 - Typical Instantaneous Forward Characteristics Per Diode Fig. 6 - Typical Transient Thermal Impedance Per Diode Revision: 27-Jun-12 Document Number: 88677 3 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 MBR(F,B)3035CT, MBR(F,B)3045CT www.vishay.com Vishay General Semiconductor PACKAGE OUTLINE DIMENSIONS in inches (millimeters) TO-220AB ITO-220AB 0.370 (9.40) 0.360 (9.14) 0.185 (4.70) 0.175 (4.44) 0.154 (3.91) 0.148 (3.74) PIN 2 3 0.160 (4.06) 0.140 (3.56) 0.350 (8.89) 0.330 (8.38) 1.148 (29.16) 1.118 (28.40) 0.105 (2.67) 0.095 (2.41) 0.104 (2.65) 0.096 (2.45) 0.135 (3.43) DIA. 0.122 (3.08) DIA. 7 REF. 0.350 (8.89) 0.330 (8.38) 2 3 7 REF. 0.191 (4.85) 0.171 (4.35) 0.560 (14.22) 0.530 (13.46) 0.560 (14.22) 0.530 (13.46) 0.035 (0.89) 0.025 (0.64) 0.025 (0.64) 0.015 (0.38) 0.105 (2.67) 0.095 (2.41) 0.022 (0.56) 0.014 (0.36) 0.110 (2.79) 0.100 (2.54) 0.057 (1.45) 0.045 (1.14) 0.057 (1.45) 0.045 (1.14) 0.035 (0.90) 0.028 (0.70) 0.205 (5.20) 0.195 (4.95) 0.671 (17.04) 0.651 (16.54) PIN 1 0.110 (2.79) 0.100 (2.54) 0.057 (1.45) 0.045 (1.14) 0.140 (3.56) DIA. 0.125 (3.17) DIA. 0.600 (15.24) 0.580 (14.73) 0.603 (15.32) 0.573 (14.55) 7 REF. 0.076 (1.93) REF. 45 REF. 0.145 (3.68) 0.135 (3.43) 0.635 (16.13) 0.625 (15.87) 0.110 (2.79) 0.100 (2.54) 0.076 (1.93) REF. 0.055 (1.39) 0.045 (1.14) 0.113 (2.87) 0.103 (2.62) 1 0.190 (4.83) 0.170 (4.32) 0.404 (10.26) 0.384 (9.75) 0.415 (10.54) MAX. 0.028 (0.71) 0.020 (0.51) 0.205 (5.21) 0.195 (4.95) TO-263AB 0.411 (10.45) 0.380 (9.65) 0.190 (4.83) 0.160 (4.06) 0.245 (6.22) MIN. 0.055 (1.40) 0.045 (1.14) Mounting Pad Layout 0.42 (10.66) MIN. K 0.360 (9.14) 0.320 (8.13) 1 K 2 0.624 (15.85) 0.591 (15.00) 0 to 0.01 (0 to 0.254) 0.110 (2.79) 0.090 (2.29) 0.021 (0.53) 0.014 (0.36) 0.037 (0.940) 0.027 (0.686) 0.105 (2.67) 0.095 (2.41) Revision: 27-Jun-12 0.055 (1.40) 0.047 (1.19) 0.205 (5.20) 0.195 (4.95) 0.140 (3.56) 0.110 (2.79) 0.33 (8.38) MIN. 0.670 (17.02) 0.591 (15.00) 0.15 (3.81) MIN. 0.08 (2.032) MIN. 0.105 (2.67) 0.095 (2.41) Document Number: 88677 4 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Legal Disclaimer Notice www.vishay.com Vishay Disclaimer ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE. 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