BSC110N15NS5 MOSFET OptiMOSTM5Power-Transistor,150V SuperSO8 8 Features *N-channel,normallevel *ExcellentgatechargexRDS(on)product(FOM) *Verylowon-resistanceRDS(on) *150Coperatingtemperature *Pb-freeleadplating;RoHScompliant *QualifiedaccordingtoJEDEC1)fortargetapplication *Idealforhigh-frequencyswitchingandsynchronousrectification 7 5 6 4 1 2 3 6 5 3 2 4 7 8 1 Table1KeyPerformanceParameters Parameter Value Unit S1 8D VDS 150 V S2 7D RDS(on),max 11 m S3 6D ID 76 A G4 5D QOSS 78 nC QG (0V..10V) 28 nC QSW 11.5 nC Type/OrderingCode Package BSC110N15NS5 PG-TDSON-8 1) Marking 110N15NS RelatedLinks - J-STD20 and JESD22 Final Data Sheet 1 Rev.2.4,2018-05-23 OptiMOSTM5Power-Transistor,150V BSC110N15NS5 TableofContents Description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 Maximum ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 Thermal characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 Electrical characteristics diagrams . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5 Package Outlines . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9 Revision History . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10 Trademarks . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10 Disclaimer . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10 Final Data Sheet 2 Rev.2.4,2018-05-23 OptiMOSTM5Power-Transistor,150V BSC110N15NS5 1Maximumratings atTA=25C,unlessotherwisespecified Table2Maximumratings Parameter Symbol Continuous drain current Values Unit Note/TestCondition 76 48 A TC=25C TC=100C - 304 A TC=25C - - 100 mJ ID=50A,RGS=25 VGS -20 - 20 V - Power dissipation Ptot - - 125 W TC=25C Operating and storage temperature Tj,Tstg -55 - 150 C IEC climatic category; DIN IEC 68-1: 55/150/56 Unit Note/TestCondition Min. Typ. Max. ID - - ID,pulse - Avalanche energy, single pulse EAS Gate source voltage Pulsed drain current1) 2) 2Thermalcharacteristics Table3Thermalcharacteristics Parameter Symbol Thermal resistance, junction - case , 6 cm2 cooling area3) Values Min. Typ. Max. RthJC - 0.6 1 K/W - RthJA - - 50 K/W - Unit Note/TestCondition 3Electricalcharacteristics Table4Staticcharacteristics Parameter Symbol Drain-source breakdown voltage Values Min. Typ. Max. V(BR)DSS 150 - - V VGS=0V,ID=1mA Gate threshold voltage VGS(th) 3 3.8 4.6 V VDS=VGS,ID=91A Zero gate voltage drain current IDSS - 0.1 10 1 100 A VDS=120V,VGS=0V,Tj=25C VDS=120V,VGS=0V,Tj=125C Gate-source leakage current IGSS - 1 100 nA VGS=20V,VDS=0V Drain-source on-state resistance RDS(on) - 9 10 11 12.7 m VGS=10V,ID=38A, VGS=8V,ID=19A, Gate resistance4) RG - 0.9 1.35 - Transconductance gfs 29 58 - S |VDS|>2|ID|RDS(on)max,ID=38A 1) See Diagram 3 for more detailed information See Diagram 13 for more detailed information 3) Device on 40 mm x 40 mm x 1.5 mm epoxy PCB FR4 with 6 cm2 (one layer, 70 m thick) copper area for drain connection. PCB is vertical in still air. 4) Defined by design. Not subject to production test 2) Final Data Sheet 3 Rev.2.4,2018-05-23 OptiMOSTM5Power-Transistor,150V BSC110N15NS5 Table5Dynamiccharacteristics Parameter Symbol Values Unit Note/TestCondition 2770 pF VGS=0V,VDS=75V,f=1MHz 515 685 pF VGS=0V,VDS=75V,f=1MHz - 13 23 pF VGS=0V,VDS=75V,f=1MHz td(on) - 10.3 - ns VDD=75V,VGS=10V,ID=38A, RG,ext=3 Rise time tr - 3.3 - ns VDD=75V,VGS=10V,ID=38A, RG,ext=3 Turn-off delay time td(off) - 14.5 - ns VDD=75V,VGS=10V,ID=38A, RG,ext=3 Fall time tf - 2.9 - ns VDD=75V,VGS=10V,ID=38A, RG,ext=3 Unit Note/TestCondition Min. Typ. Max. Ciss - 2080 Output capacitance Coss - Reverse transfer capacitance1) Crss Turn-on delay time Input capacitance1) 1) Table6Gatechargecharacteristics2) Parameter Symbol Values Min. Typ. Max. Qgs - 12 - nC VDD=75V,ID=38A,VGS=0to10V Gate to drain charge Qgd - 5.8 9 nC VDD=75V,ID=38A,VGS=0to10V Switching charge Qsw - 11.5 - nC VDD=75V,ID=38A,VGS=0to10V Gate charge total Qg - 28 35 nC VDD=75V,ID=38A,VGS=0to10V Gate plateau voltage Vplateau - 5.8 - V VDD=75V,ID=38A,VGS=0to10V Qoss - 78 103 nC VDD=75V,VGS=0V Unit Note/TestCondition Gate to source charge 1) 1) 1) Output charge Table7Reversediode Parameter Symbol Diode continous forward current Diode pulse current Diode forward voltage 1) Reverse recovery time 1) Reverse recovery charge 1) 2) Values Min. Typ. Max. IS - - 76 A TC=25C IS,pulse - - 304 A TC=25C VSD - 0.88 1.2 V VGS=0V,IF=38A,Tj=25C trr - 45 90 ns VR=75V,IF=38A,diF/dt=100A/s Qrr - 46 92 nC VR=75V,IF=38A,diF/dt=100A/s Defined by design. Not subject to production test See Gate charge waveforms for parameter definition Final Data Sheet 4 Rev.2.4,2018-05-23 OptiMOSTM5Power-Transistor,150V BSC110N15NS5 4Electricalcharacteristicsdiagrams Diagram1:Powerdissipation Diagram2:Draincurrent 140 80 120 60 80 ID[A] Ptot[W] 100 40 60 40 20 20 0 0 50 100 150 0 200 0 50 100 TC[C] 150 200 TC[C] Ptot=f(TC) ID=f(TC);VGS10V Diagram3:Safeoperatingarea Diagram4:Max.transientthermalimpedance 3 101 10 1 s 102 10 s 100 101 1 ms 0 10 ms 10 0.5 ZthJC[K/W] ID[A] 100 s 0.2 0.1 10-1 DC 0.05 0.02 10-1 0.01 single pulse 10-2 10-1 100 101 102 103 10-2 10-5 10-4 VDS[V] 10-2 10-1 100 tp[s] ID=f(VDS);TC=25C;D=0;parameter:tp Final Data Sheet 10-3 ZthJC=f(tp);parameter:D=tp/T 5 Rev.2.4,2018-05-23 OptiMOSTM5Power-Transistor,150V BSC110N15NS5 Diagram5:Typ.outputcharacteristics Diagram6:Typ.drain-sourceonresistance 150 35 10 V 8V 30 7V 5.5 V 6V 6.5 V 25 100 RDS(on)[m] 7V ID[A] 6.5 V 50 6V 0 1 2 3 15 8V 10 4 10 V 5 5.5 V 0 20 0 5 0 40 80 VDS[V] 120 160 ID[A] ID=f(VDS);Tj=25C;parameter:VGS RDS(on)=f(ID);Tj=25C;parameter:VGS Diagram7:Typ.transfercharacteristics Diagram8:Typ.forwardtransconductance 140 100 120 80 100 60 ID[A] gfs[S] 80 60 40 40 20 150 C 25 C 20 0 0 2 4 6 8 10 0 0 VGS[V] 40 60 80 100 ID[A] ID=f(VGS);|VDS|>2|ID|RDS(on)max;parameter:Tj Final Data Sheet 20 gfs=f(ID);Tj=25C 6 Rev.2.4,2018-05-23 OptiMOSTM5Power-Transistor,150V BSC110N15NS5 Diagram9:Drain-sourceon-stateresistance Diagram10:Typ.gatethresholdvoltage 25 5.0 4.5 20 910 A 4.0 91 A 15 3.0 VGS(th)[V] RDS(on)[m] 3.5 max 10 typ 2.5 2.0 1.5 5 1.0 0.5 0 -60 -20 20 60 100 0.0 -60 140 -20 20 Tj[C] 60 100 140 Tj[C] RDS(on)=f(Tj);ID=38A;VGS=10V VGS(th)=f(Tj);VGS=VDS;parameter:ID Diagram11:Typ.capacitances Diagram12:Forwardcharacteristicsofreversediode 4 103 10 25 C 150 C 25C max 150C max Ciss 103 Coss IF[A] C[pF] 102 102 101 Crss 101 100 0 20 40 60 80 100 100 0.0 0.5 VDS[V] C=f(VDS);VGS=0V;f=1MHz Final Data Sheet 1.0 1.5 2.0 VSD[V] IF=f(VSD);parameter:Tj 7 Rev.2.4,2018-05-23 OptiMOSTM5Power-Transistor,150V BSC110N15NS5 Diagram13:Avalanchecharacteristics Diagram14:Typ.gatecharge 2 10 10 8 75 V 25 C 30 V 101 120 V 6 VGS[V] IAS[A] 100 C 150 C 4 2 100 100 101 102 103 tAV[s] 0 0 5 10 15 20 25 30 Qgate[nC] IAS=f(tAV);RGS=25;parameter:Tj(start) VGS=f(Qgate);ID=38Apulsed;parameter:VDD Diagram15:Drain-sourcebreakdownvoltage Diagram Gate charge waveforms 170 165 VBR(DSS)[V] 160 155 150 145 140 135 -60 -20 20 60 100 140 180 Tj[C] VBR(DSS)=f(Tj);ID=1mA Final Data Sheet 8 Rev.2.4,2018-05-23 OptiMOSTM5Power-Transistor,150V BSC110N15NS5 5PackageOutlines Figure1OutlinePG-TDSON-8,dimensionsinmm Final Data Sheet 9 Rev.2.4,2018-05-23 OptiMOSTM5Power-Transistor,150V BSC110N15NS5 RevisionHistory BSC110N15NS5 Revision:2018-05-23,Rev.2.4 Previous Revision Revision Date Subjects (major changes since last revision) 2.0 2015-05-26 Release of final version 2.1 2015-06-09 Update Avalanche Energy 2.2 2017-09-18 Update Ron max at Vgs=8V 2.3 2018-02-21 Update labels Diagram 9 2.4 2018-05-23 Update date Trademarks Allreferencedproductorservicenamesandtrademarksarethepropertyoftheirrespectiveowners. WeListentoYourComments Anyinformationwithinthisdocumentthatyoufeeliswrong,unclearormissingatall?Yourfeedbackwillhelpustocontinuously improvethequalityofthisdocument.Pleasesendyourproposal(includingareferencetothisdocument)to: erratum@infineon.com Publishedby InfineonTechnologiesAG 81726Munchen,Germany (c)2018InfineonTechnologiesAG AllRightsReserved. LegalDisclaimer Theinformationgiveninthisdocumentshallinnoeventberegardedasaguaranteeofconditionsorcharacteristics ("Beschaffenheitsgarantie"). Withrespecttoanyexamples,hintsoranytypicalvaluesstatedhereinand/oranyinformationregardingtheapplicationofthe product,InfineonTechnologiesherebydisclaimsanyandallwarrantiesandliabilitiesofanykind,includingwithoutlimitation warrantiesofnon-infringementofintellectualpropertyrightsofanythirdparty. Inaddition,anyinformationgiveninthisdocumentissubjecttocustomer'scompliancewithitsobligationsstatedinthis documentandanyapplicablelegalrequirements,normsandstandardsconcerningcustomer'sproductsandanyuseofthe productofInfineonTechnologiesincustomer'sapplications. Thedatacontainedinthisdocumentisexclusivelyintendedfortechnicallytrainedstaff.Itistheresponsibilityofcustomer's technicaldepartmentstoevaluatethesuitabilityoftheproductfortheintendedapplicationandthecompletenessoftheproduct informationgiveninthisdocumentwithrespecttosuchapplication. Information Forfurtherinformationontechnology,deliverytermsandconditionsandpricespleasecontactyournearestInfineon TechnologiesOffice(www.infineon.com). Warnings Duetotechnicalrequirements,componentsmaycontaindangeroussubstances.Forinformationonthetypesinquestion, pleasecontactthenearestInfineonTechnologiesOffice. TheInfineonTechnologiescomponentdescribedinthisDataSheetmaybeusedinlife-supportdevicesorsystemsand/or automotive,aviationandaerospaceapplicationsorsystemsonlywiththeexpresswrittenapprovalofInfineonTechnologies,ifa failureofsuchcomponentscanreasonablybeexpectedtocausethefailureofthatlife-support,automotive,aviationand aerospacedeviceorsystemortoaffectthesafetyoreffectivenessofthatdeviceorsystem.Lifesupportdevicesorsystemsare intendedtobeimplantedinthehumanbodyortosupportand/ormaintainandsustainand/orprotecthumanlife.Iftheyfail,itis reasonabletoassumethatthehealthoftheuserorotherpersonsmaybeendangered. Final Data Sheet 10 Rev.2.4,2018-05-23