MBR4035PT, MBR4045PT, MBR4050PT, MBR4060PT
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Revision: 17-Aug-15 1Document Number: 88679
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THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Dual Common Cathode Schottky Rectifier
FEATURES
• Power pack
• Guardring for overvoltage protection
• Lower power losses, high efficiency
• Low forward voltage drop
• High forward surge capability
• High frequency operation
• Solder dip 275 °C max.10 s, per JESD 22-B106
• Material categorization: for definitions of compliance
please see www.vishay.com/doc?99912
TYPICAL APPLICATIONS
For use in low voltage, high frequency rectifier of switching
mode power supplies, freewheeling diodes, DC/DC
converters, or polarity protection application.
MECHANICAL DATA
Case: TO-247AD (TO-3P)
Molding compound meets UL 94 V-0 flammability rating
Base P/N-E3 - RoHS-compliant, commercial grade
Terminals: Matte tin plated leads, solderable per
J-STD-002 and JESD 22-B102
E3 suffix meets JESD 201 class 1A whisker test
Polarity: As marked
Mounting Torque: 10 in-lbs maximum
Note
(1) 2.0 μs pulse width, f = 1.0 kHz
PRIMARY CHARACTERISTICS
IF(AV) 40 A
VRRM 35 V, 45 V, 50 V, 60 V
IFSM 400 A
VF 0.60 V, 0.62 V
TJ max. 150 °C
Package TO-247AD (TO-3P)
Diode variations Common cathode
PIN 1
PIN 3 CASE
PIN 2
TO-247AD (TO-3P)
1
2
3
MAXIMUM RATINGS (TA = 25 °C unless otherwise noted)
PARAMETER SYMBOL MBR4035PT MBR4045PT MBR4050PT MBR4060PT UNIT
Maximum repetitive peak reverse voltage VRRM 35 45 50 60 V
Maximum working peak reverse voltage VRWM 35 45 50 60 V
Maximum DC blocking voltage VDC 35 45 50 60 V
Maximum average forward rectified current TC = 125 °C IF(AV) 40 A
Peak forward surge current 8.3 ms single half
sine-wave superimposed on rated load per diode IFSM 400 A
Peak repetitive reverse surge current per diode IRRM (1) 2.0 1.0 A
Voltage rate of change (rated VR) dV/dt 10 000 V/μs
Operating junction temperature range TJ-65 to +150 °C
Storage temperature range TSTG -65 to +175 °C
MBR4035PT, MBR4045PT, MBR4050PT, MBR4060PT
www.vishay.com Vishay General Semiconductor
Revision: 17-Aug-15 2Document Number: 88679
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Note
(1) Pulse test: 300 μs pulse width, 1 % duty cycle
RATINGS AND CHARACTERISTICS CURVES (TA = 25 °C unless otherwise noted)
Fig. 1 - Forward Current Derating Curve Fig. 2 - Maximum Non-Repetitive Peak Forward Surge Current
Per Diode
ELECTRICAL CHARACTERISTICS (TA = 25 °C unless otherwise noted)
PARAMETER SYMBOL TEST CONDITIONS MBR4035PT MBR4045PT MBR4050PT MBR4060PT UNIT
Maximum instantaneous forward
voltage per diode VF (1)
IF = 20 A TJ = 25 °C 0.70 0.72
V
IF = 20 A TJ = 125 °C 0.60 0.62
IF = 40 A TJ = 25 °C 0.80 -
IF = 40 A TJ = 125 °C 0.75 -
Maximum instantaneous reverse
current at rated DC blocking voltage
per diode
IR (1) TJ = 25 °C 1.0
mA
TJ = 125 °C 100
THERMAL CHARACTERISTICS (TA = 25 °C unless otherwise noted)
PARAMETER SYMBOL MBR4035PT MBR4045PT MBR4050PT MBR4060PT UNIT
Thermal resistance, junction to case
per diode RJC 1.2 °C/W
ORDERING INFORMATION (Example)
PACKAGE PREFERRED P/N UNIT WEIGHT (g) PACKAGE CODE BASE QUANTITY DELIVERY MODE
TO-247AD MBR4045PT-E3/45 6.13 45 30/tube Tube
050 100 150
0
10
20
30
40
50
Average Forward Current (A)
Case Temperature (°C)
Resistive or Inductive Load
110 100
100
200
300
400
Number of Cycles at 60 Hz
Peak Forward Surge Current (A)
TJ = TJ Max.
8.3 ms Single Half Sine-Wave
MBR4035PT, MBR4045PT, MBR4050PT, MBR4060PT
www.vishay.com Vishay General Semiconductor
Revision: 17-Aug-15 3Document Number: 88679
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Fig. 3 - Typical Instantaneous Forward Characteristics Per Diode
Fig. 4 - Typical Reverse Characteristics Per Diode
Fig. 5 - Typical Junction Capacitance Per Diode
Fig. 6 - Typical Transient Thermal Impedance Per Diode
PACKAGE OUTLINE DIMENSIONS in inches (millimeters)
00.2 0.4 0.6 0.8 1.0 1.2
0.01
0.1
1
10
100
MBR4035PT, MBR4045PT
MBR4050PT, MBR4060PT
TJ = 150 °C
TJ = 25 °C
Pulse Width = 300 µs
1 % Duty Cycle
Instantaneous Forward Voltage (V)
Instantaneous Forward Current (A)
020 40 60 80 100
0.001
0.01
0.1
1
10
100
TJ = 125 °C
TJ = 25 °C
TJ = 75 °C
Percent of Rated Peak Reverse Voltage (%)
Instantaneous Reverse Current (mA)
MBR4035PT, MBR4045PT
MBR4050PT, MBR4060PT
0.1 110 100
100
1000
10 000
Reverse Voltage (V)
Junction Capacitance (pF)
MBR4035PT, MBR4045PT
MBR4050PT, MBR4060PT
T
J
= 25 °C
f = 1.0 MHz
V
sig
= 50 mV
p-p
0.01 0.1 110 100
0.1
1
10
100
t - Pulse Duration (s)
Transient Thermal Impedance (°C/W)
PIN 1
PIN 3 CASE
PIN 2
TO-247AD (TO-3P)
0.245 (6.2)
0.225 (5.7)
0.645 (16.4)
0.625 (15.9) 0.323 (8.2)
0.313 (7.9)
0.142 (3.6)
0.138 (3.5)
0.170
(4.3)
0.086 (2.18)
0.076 (1.93)
0.160 (4.1)
0.140 (3.5)
0.225 (5.7)
0.205 (5.2)
0.127 (3.22)
0.117 (2.97)
0.048 (1.22)
0.044 (1.12)
0.795 (20.2)
0.775 (19.6)
0.840 (21.3)
0.820 (20.8)
1 2 3
0.078 (1.98) REF.
0.203 (5.16)
0.193 (4.90)
10° TYP.
Both Sides
30° 10
1° REF.
Both Sides
0.030 (0.76)
0.020 (0.51)
0.118 (3.0)
0.108 (2.7)
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www.vishay.com Vishay
Revision: 08-Feb-17 1Document Number: 91000
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