TIP33A, TIP34A
TIP33B, TIP34B
TIP33C, TIP34C
Silicon Complementary High−Power Transistors
TO247 Type Package
Description:
The TIP33 (NPN) and TIP34 (PNP) series complementary high−power transistors are designed for
use in general purpose power amplifier and switching applications.
Features:
DCollector−Emitter Sustaining Voltage:
VCEO(sus) = 60V Min (TIP33A, TIP34A)
80V Min (TIP33B, TIP34B)
100V Min (TIP33C, TIP34C)
DDC Current Gain: hFE = 40 Min @ IC = 1.0A
DCurrent Gain−Bandwidth Product: fT = 3Mhz Min @ IC = 0.5A
Absolute Maximum Ratings:
Collector−Emitter Voltage, VCEO
TIP33A, TIP34A 60V..............................................................
TIP33B, TIP34B 80V..............................................................
TIP33C, TIP34C 100V............................................................
Collector−Base Voltage, VCBO
TIP33A, TIP34A 60V..............................................................
TIP33B, TIP34B 80V..............................................................
TIP33C, TIP34C 100V............................................................
Emitter−Base Voltage, VEBO 5V..........................................................
Collector Current, IC
Continuous 10A..................................................................
Peak 15A.......................................................................
Base Current, IB3A....................................................................
Total Power Dissipation (TC = +25_C), PD80W............................................
Derate Above +25_C 0.64W/_C...................................................
Operating Junction Temperature Range, TJ−65_ to +150_C.................................
Storage Temperature Range, Tstg −65_ to +150_C.........................................
Thermal Resistance, Junction−to−Case, RthJC 1.56_C/W...................................
Electrical Characteristics: (TC = +25_C unless otherwise specified)
Parameter Symbol Test Conditions Min Typ Max Unit
OFF Characteristics
Collector−Emitter Sustaining Voltage
TIP33A, TIP34A
VCEO(sus) IC = 30mA, IB = 0, Note 1 60 − − V
TIP33B, TIP34B 80 − − V
TIP33C, TIP34C 100 − − V
Collector Cutoff Current
TIP33A, TIP34A
ICEO VCE = 30V, IB = 0 − − 0.7 mA
TIP33B, TIP34B, TIP33C, TIP34C VCE = 60V, IB = 0 − − 0.7 mA
Collector Cutoff Current
TIP33A, TIP34A
ICES VCE = 60V, VEB = 0 − − 0.4 mA
TIP33B, TIP34B VCE = 80V, VEB = 0 − − 0.4 mA
TIP33C, TIP34C VCE = 100V, VEB = 0 − − 0.4 mA
Emitter Cutoff Current IEBO VEB = 5V, IC = 0 − − 1.0 mA
ON Characteristics (Note 1)
DC Current Gain hFE VCE = 4V, IB = 1.0A 40 − −
VCE = 4V, IB = 3.0A 20 −100
Collector−Emitter Saturation Voltage VCE(sat) IC = 3A, IB = 0.3A − − 1.0 V
IC = 10A, IB = 2.5A − − 4.0 V
Base−Emitter ON Voltage VBE(on) IC = 3A, VCE = 4V − − 1.6 V
IC = 10A, VCE = 4V − − 3.0 V
Dynamic Characteristics
Current Gain−Bandwidth Product fTIC = 0.5A, VCE = 10V,
fTEST = 1Mhz, Note 2
3.0 − − MHz
Small Signal Current Gain hfe IC = 0.5A, VCE = 10V, f = 1kHz 20 − −
Note 1. Pulse Test: Pulse width v 300ms, Duty Cycle v 2%.
Note 2. fT = |hfe| fTEST
.590
(15.0)
.846
(21.5)
.728
(18.5)
Min
BCE
.130 (3.3)
Dia
.207 (5.26) .024 (0.62)
.198 (5.02)
.638 (16.2)
Max
.171
(4.35)
.220
(5.6)
