SIEMENS NPN Silicon AF Transistors @ For AF input stages and driver applications @ High current gain @ Low collector-emitter saturation voltage @ Low noise between 30 Hz and 15 kHz @ Complementary types: BCW 61, BCX 71 (PNP) BCW 60 BCX 70 VPSOS161 Type Marking Ordering Code Pin Configuration | Package) (tape and reel) 1 2 3 BCW 60A AAS Q62702-C1517 B E C | SOT-23 BCW 60 B ABs Q62702-C 1497 BCW 60 C ACs Q62702-C1476 BCW 60 D ADs Q62702-C1477 BCW 60 FF AFs Q62702-C1529 BCW 60 FN ANs Q62702-C1567 BCX 70 G AGs Q62702-C1539 BCX 70H AHs Q62702-C1481 BCX 70 J AJs Q62702-C 1552 BCX 70 K AKs Q62702-C1571 1} For detaited information see chapter Package Outlines. Semiconductor Group 851 .91SIEMENS BCW 60 BCX 70 Maximum Ratings Parameter Symbol Values Unit BCW 60 |BCW 60 FF| BCX 70 Collector-emitter voltage Voeo 32 32 45 Vv Collector-base voltage Vepo 32 32 45 Emitter-base voltage Vewo 5 Collector current Ic 100 mA Peak collector current Tom 200 Peak base current Tom 200 Total power dissipation, Ts = 71C | Pro 330 mw Junction temperature Ti 150 C Storage ternperature range Tstg 65...+ 150 Thermal Resistance Junction - ambient Rthsa <310 KAW Junction - soldering point Rivas < 240 1) Package rnounted on epoxy pcb 40 mm x 40 mmx 1.5 mnv6 cm? Cu. Semiconductor Group 852SIEMENS BCW 60 BCX 70 Electrical Characteristics at Ta = 25 "C, unless otherwise specified. Parameter Symbol Values Unit min. |typ. | max. DC characteristics Collector-emitter breakdown voltage Vieryceo Vv ic=10mMA BCW 60, BCW 60 FF 32 - - BCX 70 45 - ~ Collector-base breakdown voltage Vipryceo ic=10 pA BCW 60, BCW 60 FF 32 - - BCX 70 45 - ~ Emitter-base breakdown voltage Vermeso | 5 - - fe=1uA Collector cutoff current Iceq Vea = 32 V BCW 60, BCW 60 FF - - 20 nA Ves = 45 V BCX 70 - - 20 nA Ves = 32 V, Ta= 150C BCW 60, BCW 60 FF - - 20 uA Ves = 45 V, Ta= 150C BCX 70 - - 20 | nA Emitter cutoff current Teao - - 20 nA Ves=4V DC current gain") hre - Ie=10yA, Vee =5V BCW 60 A, BCX 70 G 20 140 |- BCW 60 B, BCX 70 H 20 200 |- BCW 60 FF, BCW 60 C, BCX 70 J 40 300 |- BCW 60 FN, BCW 60 D, BCX 70 K 100 |460 |- Ic=2mMA, Vee=5V BCW 60 A, BCX 70 G 120 170 220 BCW 60 B, BCX 70 H 180 250 310 BCW 60 FF, BCW 60 C, BCX 70 J 250 350 =| 460 BCW 60 FN, BCW 60 D, BCX 70 K 380 500 630 fo =50 mA, Vee=1V BCW 60 A, BCX 70G 50 - ~ BCW 60 B, BCX 70H 70 - - BCW 60 FF, BCW 60 C, BCX 70 J 90 - - BCW 60 FN, BCW 60 D, BCX 70 K 100 |- - 1) Pulse test: 7< 300 ps, Ds 2%. Semiconductor Group 853SIEMENS BCW 60 BCX 70 Electrical Characteristics at Ta = 25 C, unless otherwise specified. Parameter Symbol Values Unit min. |typ. | max. DC characteristics Collector-emitter saturation voltage Veesat Vv Ic =10 mA, Ia = 0.25 mA - 0.12 |0.25 Ic = 50 mA, Je = 1.25 mA - 0.20 | 0.55 Base-emitter saturation voltage") Veesat Io = 10 MA, Ie = 0.25 mA ~ 0.70 |0.85 Ic = 50 mA, le = 1.25 mA - 0.83 | 1.05 Base-emitter voltage VBE (on) Ic =10 pA, VeeE=5V - 0.52 |- Ic= 2mMA, Vee =5V 0.55 |0.65 |0.75 Ic = 50 mA, Vee=1V1) - 0.78 |- AC characteristics Transition frequency if ~ 250 - MHz Ic = 20 MA, Vce = 5 V, f= 100 MHz Output capacitance Cobo - 3 - pF Vea = 10 V, f= 1 MHz Input capacitance Cro - 8 - Ves = 0.5 V, f= 1 MHz Short-circuit input impedance hive kQ Io =2 MA, Vce=5 V, f= 1 kHz BCW 60 A, BCX 70G - 2.7 - BCW 60 B, BCX 70H - 3.6 ~ BCW 60 FF, BCW 60 C, BCX 70 J - 45 - BCW 60 FN, BCW 60 D, BCX 70 K - 7.5 - Open-circuit reverse voltage transfer ratio haze 10-4 Io =2mMA, Vee =5 V, f= 1 kHz BCW 60 A, BCX 70G - 1.5 - BCW 60 B, BCX 70H ~ 2.0 - BCW 60 FF, BCW 60 C, BCX 70 J - 2.0 - BCW 60 FN, BCW 60 D, BCX 70 K 3.0 1 Pulse test: #< 300 ps, Ds 2%. Semiconductor Group 854SIEMENS BCW 60 BCX 70 Electrical Characteristics at Ts = 25 C, unless otherwise specified. Parameter Symbol Values Unit min. | typ. | max. AC characteristics Short-circuit forward current transfer ratio hare - Io=2 mA, Vee =5V, f= 1 kHz BCW 60 A, BCX 70 G - 200. | - BCW 60 B, BCX 70 H - 260 j- BCW 60 FF, BCW 60 C, BCX 70 J - 330 | - BCW 60 FN, BCW 60 D, BCX 70 K - 520 |- Open-circuit output admittance haze Bs Ic =2 mA, Vee =5V, f= 1 kHz BCW 60 A, BCX 70 G ~ 18 - BCW 60 B, BCX 70 H - 24 - BCW 60 FF, BCW 60 C, BCX 70 J - 30 - BCW 60 FN, BCW 60 D, BCX 70 K - 50 - Noise figure F dB Ie =0.2 mA, Voe=5V, Rs = 2 kQ : f= 1 kHz, af = 200 Hz BCW 60 A to BCX 70 K - 2 - BCW 60 FF, BCW 60 FN - 1 2 Equivalent noise voltage Va - - 0.135 | uv Io=0.2 MA, Vee=5V, Rs = 2 kQ f= 10Hz... 50 Hz BCW 60 FF, BCW 60 FN Semiconductor Group 855SIEMENS Total power dissipation Pi = f (Ta*; Ts) * Package mounted on epoxy 400 & 80/8Cx 70 HPO0S26 mW Prot \ 300 \ Y Ts 200 7N\ WK \\ 100 N 0 0 50 100 c_150 - 7: 7, Permissible pulse load Pit mex/Pianc = f (fp) BCW 60 BCX 70 Collector-base capacitance Ccz0 = f (Vcn0) Emitter-base capacitance Ces = f (Veso) 122% [ceo (Cero) pF 10 0 EHPOOS27 V 10! > Vego: (Vena) 0 107! 10 Transition frequency fr = f (7c) Vee=5V 103 BCW 60/BCX 70 on 103 scw EHPOO330 Prot max 5 lot DC fr M2 10? Ht 5 Got HT TTF Mh 10! | a 5 Ne Tih cc To SH LLIN Bs. K mill nisl 10 0 = 1978 a io" 08 io? _ 'y $ Semiconductor Group 856 10? 10? 10! ei,SIEMENS Base-emitter saturation voltage Ic = f (Veesat) hre = 40 1 02 ecw 70 EHPOO331 I, mA to! 10 107 0 #02 04 06 08 Vo 1.2 > Vor sat Collector current /c = f (Vee) Vce=5V BCW 60/8CX 70 EHPOOS33 10? i, mA 25C ~50C 0 0.5 v 1.0 Ver Semiconductor Group 857 BCW 60 BCX 70 Collector-emitter saturation voltage Ic = f (Veesat) hre = 40 192 8 70 EMPOC332 I, mA 10! 107 0 0.1 0.2 0.3 4V 05 ad Vetsat DC current gain Are = f (Ic) Vee =5V o3 70 EHPOOS34 { 10' ma 10 > |,SIEMENS BCW 60 BCX 70 Collector cutoff current Iceo = f (7) EHPOOS3S ecw 60/BCX 70 104 nA 103 10? 10! 10 0 50 100 C) | 150 +. /, h parameter he = f (Vcc) Ie=2mMA BCW 60/8Cx 70 HPO0337 2.0 A 1.0 0.5 Ve Semiconductor Group h parameter he = f (Ic) Vee =5V 10? 1o7! 107! Noise figure F = f (Vce) Ic = 0.2 mA, Rs = 2 kQ, f= 1 kHz =~ 858 Bcw i) ENPOO3SS 20 dB 1 0 107! 10 io 6 10? VerSIEMENS BCW 60 BCX 70 Noise figure F =f () Noise figure F = f (Ic) Ic =0.2 mA, Rs = 2kO,Vce=5 V Vee = 5 V, f= 120 Hz 20 bcw 70 EHPOO339 20 ecw 70 EHP00540 rp (38 rp (8 I 15 15 10 10 5 5 0 wo? = sam! to? 10" ke 0? t f Noise figure F = f (/c} Vee = 5 V, f= 1 kHz 20 BCw 70 EHPOOS 41 F dB t 10 ma 10! I, 0 17>) = 10710! Semiconductor Group 10 ma 10! . 4 0 1o8) = to? 077 Noise figure F = f (ic) Vee = 5 V, f= 10 kHz 859 acw 70 20 dB 10" 10 ma 10 |, 0 103 107?