AOT298L/AOB298L/AOTF298L 100V N-Channel AlphaSGT TM General Description Product Summary VDS * Trench Power AlphaSGTTM technology * Low RDS(ON) * Low Gate Charge ID (at VGS=10V) 100V 58A/33A RDS(ON) (at VGS=10V) < 14.5m Applications 100% UIS Tested 100% Rg Tested * Synchronus Rectification in DC/DC and AC/DC Converters * Notebook Adaptor, TV Power Supply applications Top View TO-220 TO-263 D2PAK TO-220F D D G G AOT298L D S G AOTF298L D S S AOB298L S G Orderable Part Number Package Type Form Minimum Order Quantity AOT298L AOB298L AOTF298L TO-220 TO-263 TO-220F Tube Tape & Reel Tube 1000 800 1000 Absolute Maximum Ratings TA=25C unless otherwise noted Parameter AOT298L/AOB298L Symbol Drain-Source Voltage VDS 100 Gate-Source Voltage VGS TC=25C Continuous Drain Current Pulsed Drain Current C TA=25C Continuous Drain Avalanche Current Avalanche energy L=0.1mH C VDS Spike I 10s TC=25C Power Dissipation B TC=100C Power Dissipation A TA=70C Rev.4.0: July 2016 9 20 A 20 mJ 120 Steady-State RJA RJC V 100 33 50 16 2.1 -55 to 175 AOT298L/AOB298L 15 60 1.5 www.aosmd.com W W 1.33 TJ, TSTG Symbol Steady-State A EAS, EAR PDSM t 10s A IAS, IAR PD Junction and Storage Temperature Range Thermal Characteristics Parameter A Maximum Junction-to-Ambient AD Maximum Junction-to-Ambient Maximum Junction-to-Case 26 7 VSPIKE TA=25C V 130 IDSM C Units V 33 41 IDM TA=70C Current 20 58 ID TC=100C AOTF298L C AOTF298L 15 60 4.5 Units C/W C/W C/W Page 1 of 7 AOT298L/AOB298L/AOTF298L Electrical Characteristics (TJ=25C unless otherwise noted) Symbol Parameter STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage IDSS Zero Gate Voltage Drain Current Conditions Min ID=250A, VGS=0V 100 TJ=55C Gate-Body leakage current VDS=0V, VGS=20V VDS=VGSID=250A 2.7 VGS=10V, VDS=5V 130 VGS=10V, ID=20A 100 nA 3.3 4.1 V 12 14.5 19 24 A RDS(ON) Static Drain-Source On-Resistance gFS Forward Transconductance VDS=5V, ID=20A 30 VSD Diode Forward Voltage IS=1A,VGS=0V 0.7 IS Maximum Body-Diode Continuous Current TJ=125C G DYNAMIC PARAMETERS Ciss Input Capacitance Crss Reverse Transfer Capacitance Rg Gate resistance VGS=0V, VDS=50V, f=1MHz f=1MHz SWITCHING PARAMETERS Qg(10V) Total Gate Charge Qgs Gate Source Charge Qgd Gate Drain Charge tD(on) Turn-On DelayTime tr Turn-On Rise Time tD(off) Turn-Off DelayTime tf Turn-Off Fall Time trr Body Diode Reverse Recovery Time Qrr VGS=10V, VDS=50V, ID=20A A 5 Gate Threshold Voltage On state drain current Output Capacitance Units 1 VGS(th) Coss Max V VDS=100V, VGS=0V IGSS ID(ON) Typ 0.8 m S 1 V 70 A 1250 1670 pF 727 970 pF 25 43 pF 2 3 19 27 nC 5.5 nC 6 nC 7.5 ns 14 ns 15 ns 14 ns IF=20A, dI/dt=500A/s 39 Body Diode Reverse Recovery Charge IF=20A, dI/dt=500A/s 140 ns nC VGS=10V, VDS=50V, RL=2.5, RGEN=3 A. The value of RJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with TA =25C. The Power dissipation PDSM is based on R JA and the maximum allowed junction temperature of 150C. The value in any given application depends on the user's specific board design, and the maximum temperature of 175C may be used if the PCB allows it. B. The power dissipation PD is based on TJ(MAX)=175C, using junction-to-case thermal resistance, and is more useful in setting the upper dissipation limit for cases where additional heatsinking is used. C. Repetitive rating, pulse width limited by junction temperature TJ(MAX)=175C. Ratings are based on low frequency and duty cycles to keep initial TJ =25C. D. The RJA is the sum of the thermal impedance from junction to case RJC and case to ambient. E. The static characteristics in Figures 1 to 6 are obtained using <300s pulses, duty cycle 0.5% max. F. These curves are based on the junction-to-case thermal impedance which is measured with the device mounted to a large heatsink, assuming a maximum junction temperature of TJ(MAX)=175C. The SOA curve provides a single pulse rating. G. The maximum current limited by package. H. These tests are performed with the device mounted on 1 in2 FR-4 board with 2oz. Copper, in a still air environment with TA=25C. I. The spike duty cycle 5% max, limited by junction temperature TJ(MAX)=120C. APPLICATIONS OR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,FUNCTIONS AND RELIABILITY WITHOUT NOTICE. Rev.4.0: July 2016 www.aosmd.com Page 2 of 7 AOT298L/AOB298L/AOTF298L TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 100 100 10V VDS=5V 7V 80 80 60 ID(A) ID (A) 60 6V 40 40 125C 20 20 25C VGS=5V 0 0 0 1 2 3 4 2 5 20 2.2 18 2 Normalized On-Resistance RDS(ON) (m) 4 5 6 7 8 VGS(Volts) Figure 2: Transfer Characteristics (Note E) VDS (Volts) Fig 1: On-Region Characteristics (Note E) 16 VGS=10V 14 3 12 10 VGS=10V ID=20A 1.8 17 5 2 10 1.6 1.4 1.2 1 0.8 8 0 5 0 10 15 20 25 30 ID (A) Figure 3: On-Resistance vs. Drain Current and Gate Voltage (Note E) 25 50 75 100 125 150 175 200 Temperature (C) 0 Figure 4: On-Resistance vs. Junction 18Temperature (Note E) 40 1.0E+02 ID=20A 1.0E+01 40 32 1.0E+00 IS (A) RDS(ON) (m) 125C 125C 24 1.0E-01 25C 1.0E-02 1.0E-03 16 1.0E-04 25C 1.0E-05 8 5 6 7 8 9 10 VGS (Volts) Figure 5: On-Resistance vs. Gate-Source Voltage (Note E) Rev.4.0: July 2016 www.aosmd.com 0.0 0.2 0.4 0.6 0.8 1.0 1.2 VSD (Volts) Figure 6: Body-Diode Characteristics (Note E) Page 3 of 7 AOT298L/AOB298L/AOTF298L TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 10 2000 VDS=50V ID=20A 1600 Capacitance (pF) VGS (Volts) 8 6 4 2 Ciss 1200 800 Coss 400 0 Crss 0 0 4 8 12 16 20 0 20 RDS(ON) limited 100 600 100s Power (W) ID (Amps) 80 TJ(Max)=175C TC=25C 10s 10s 100.0 1ms 10ms 1.0 0.1 60 800 1000.0 10.0 40 VDS (Volts) Figure 8: Capacitance Characteristics Qg (nC) Figure 7: Gate-Charge Characteristics DC 200 TJ(Max)=175C TC=25C 0.0 0.01 0.1 17 5 2 10 400 1 10 100 1000 0 0.0001 VDS (Volts) Figure 9: Maximum Forward Biased Safe Operating Area for AOT298L and AOB298L (Note F) 0.001 0.01 0.1 1 10 100 0 Pulse Width (s) 18 Figure 10: Single Pulse Power Rating Junction-to-Case for AOT298L and AOB298L (Note F) ZJC Normalized Transient Thermal Resistance 10 D=Ton/T TJ,PK=TC+PDM.ZJC.RJC 1 In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse 40 RJC=1.5C/W 0.1 PD 0.01 Ton T Single Pulse 0.001 1E-05 0.0001 0.001 0.01 0.1 1 10 100 Pulse Width (s) Figure 11: Normalized Maximum Transient Thermal Impedance for AOT298L and AOB298L (Note F) Rev.4.0: July 2016 www.aosmd.com Page 4 of 7 AOT298L/AOB298L/AOTF298L TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 1000.0 800 10s 100.0 600 RDS(ON) limited 10.0 100s Power (W) ID (Amps) TJ(Max)=175C TC=25C 1ms DC 10ms 1.0 TJ(Max)=175C TC=25C 0.1 0.0 0.01 0.1 400 200 1 10 100 0 0.0001 1000 VDS (Volts) 0.001 0.01 0.1 1 100 Pulse Width (s) Figure 13: Single Pulse Power Rating Junction-to-Case for 17 AOTF298L (Note F) Figure 12: Maximum Forward Biased Safe Operating Area for AOTF298L (Note F) 5 2 10 10 D=Ton/T TJ,PK=TC+PDM.ZJC.RJC ZJC Normalized Transient Thermal Resistance 10 In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse RJC=4.5C/W 1 0 18 0.1 PD Ton Single Pulse 0.01 1E-05 0.0001 0.001 0.01 0.1 T 1 10 100 40 Pulse Width (s) Figure 14: Normalized Maximum Transient Thermal Impedance for AOTF298L (Note F) 40 Power Dissipation (W) 50 Current rating ID(A) 40 30 20 30 20 10 10 0 0 0 25 50 75 100 125 150 TCASE (C) Figure 15: Current De-rating for AOTF298 F) Rev.4.0: July 2016 175 (Note www.aosmd.com 0 25 50 75 100 125 150 TCASE (C) Figure 16: Power De-rating for AOTF298L F) 175 (Note Page 5 of 7 AOT298L/AOB298L/AOTF298L TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 120 Power Dissipation (W) Current rating ID(A) 80 60 40 20 90 60 30 0 0 0 25 50 75 100 125 150 0 175 25 50 75 100 125 150 175 TCASE (C) Figure 18: Power De-rating for AOT298L and AOB298L (Note F) TCASE (C) Figure 17: Current De-rating for AOT298L and AOB298L (Note F) 100 10000 IAR (A) Peak Avalanche Current TA=25C Power (W) 1000 TA=25C TA=100C 17 5 2 10 100 10 TA=150C TA=125C 1 1E-05 10 1 10 100 0.001 0.1 10 0 1000 18 Pulse Width (s) Figure 20: Single Pulse Power Rating Junction-toAmbient (Note H) Time in avalanche, tA (s) Figure 19: Single Pulse Avalanche capability (Note C) ZJA Normalized Transient Thermal Resistance 10 D=Ton/T TJ,PK=TA+PDM.ZJA.RJA 1 In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse 40 RJA=60C/W 0.1 PD 0.01 Single Pulse 0.001 0.001 0.01 0.1 Ton 1 10 T 100 1000 Pulse Width (s) Figure 21: Normalized Maximum Transient Thermal Impedance (Note H) Rev.4.0: July 2016 www.aosmd.com Page 6 of 7 AOT298L/AOB298L/AOTF298L Gate Charge Test Circuit & Waveform Vgs Qg 10V + + Vds VDC - Qgs Qgd VDC - DUT Vgs Ig Charge Resistive Switching Test Circuit & Waveforms RL Vds Vds 90% + Vdd DUT Vgs VDC - Rg 10% Vgs Vgs t d(on) tr t d(off) t on tf toff Unclamped Inductive Switching (UIS) Test Circuit & Waveforms L 2 E AR = 1/2 LIAR Vds BVDSS Vds Id + Vdd Vgs Vgs I AR VDC - Rg Id DUT Vgs Vgs Diode Recovery Test Circuit & Waveforms Q rr = - Idt Vds + DUT Vds - Isd Vgs Ig Rev.4.0: July 2016 Vgs L Isd + Vdd t rr dI/dt I RM Vdd VDC - IF Vds www.aosmd.com Page 7 of 7