AOT298L/AOB298L/AOTF298L
General Description Product Summary
V
DS
I
D
(at V
GS
=10V) 58A/33A
R
DS(ON)
(at V
GS
=10V) < 14.5mΩ
Applications
100% UIS Tested
100% R
g
Tested
100V N-Channel AlphaSGT
TM
Absolute Maximum Ratings T
=25°C unless otherwise noted
100V
• Trench Power AlphaSGT
TM
technology
• Low R
DS(ON)
• Low Gate Charge
• Synchronus Rectification in DC/DC and AC/DC Converters
• Notebook Adaptor, TV Power Supply applications
Orderable Part Number Package Type Form Minimum Order Quantity
AOTF298L TO-220F Tube 1000
AOT298L TO-220 Tube 1000
AOB298L TO-263 Tape & Reel 800
G
D
S
TO-263
D2PAK
GDS
GDS
D
S
G
Top View
TO-220FTO-220
AOTF298LAOT298L AOB298L
Symbol
V
DS
V
GS
I
DM
I
AS
, I
AR
E
AS
, E
AR
V
DS
Spike
I
V
SPIKE
T
J
, T
STG
Symbol
t ≤ 10s
Steady-State
Steady-State
R
θJC
10µs 120 V
20
Gate-Source Voltage
T
C
=25°C
T
C
=100°C
mJ
Avalanche Current
7
A
Avalanche energy L=0.1mH
Continuous Drain
Current
I
D
Pulsed Drain Current
Continuous Drain
Current
Maximum Junction-to-Ambient
A
°C/W
R
θJA
15
60
Maximum Junction-to-Ambient
A D
20
33
41 26
58
130
100 33
V
A
±20
Units
T
A
=25°C I
DSM
A
T
A
=70°C
9
W
T
C
=25°C
W
T
A
=70°C 1.33
T
A
=25°C 2.1
V
UnitsParameter
Absolute Maximum Ratings T
A
=25°C unless otherwise noted
AOT298L/AOB298L AOTF298L
Drain-Source Voltage 100
°C/W
°C/W
1.5
60
4.5
Maximum Junction-to-Case
Power Dissipation
A
15
T
C
=100°C
Power Dissipation
B
P
D
50 16
-55 to 175Junction and Storage Temperature Range
Thermal Characteristics
Parameter AOT298L/AOB298L AOTF298L
°C
P
DSM
Rev.4.0: July 2016
www.aosmd.com Page 1 of 7
AOT298L/AOB298L/AOTF298L
Symbol Min Typ Max Units
BV
DSS
100 V
V
DS
=100V, V
GS
=0V 1
T
J
=55°C 5
I
GSS
±100 nA
V
GS(th)
Gate Threshold Voltage 2.7 3.3 4.1 V
I
D(ON)
130 A
12 14.5
T
J
=125°C 19 24
g
FS
30 S
V
SD
0.7 1 V
I
S
70 A
C
iss
1250 1670 pF
C
oss
727 970 pF
C
rss
25 43 pF
R
g
0.8 2 3 Ω
Q
g
(10V)
19 27 nC
Q
gs
5.5 nC
Q
gd
6 nC
t
D(on)
7.5 ns
t
r
14 ns
t
D(off)
15 ns
t
f
14
ns
Reverse Transfer Capacitance
V
GS
=0V, V
DS
=50V, f=1MHz
Output Capacitance
SWITCHING PARAMETERS
DYNAMIC PARAMETERS
Turn-On Rise Time
Turn-Off DelayTime
V
GS
=10V, V
DS
=50V, R
L
=2.5Ω,
R
GEN
=3Ω
Gate resistance f=1MHz
Turn-Off Fall Time
Turn-On DelayTime
V
GS
=10V, V
DS
=50V, I
D
=20A
Total Gate Charge
Gate Source Charge
Gate Drain Charge
R
DS(ON)
Static Drain-Source On-Resistance
Diode Forward Voltage
Maximum Body-Diode Continuous Current
G
Input Capacitance
Forward Transconductance
I
S
=1A,V
GS
=0V
V
DS
=5V, I
D
=20A
mΩ
On state drain current V
GS
=10V, V
DS
=5V
V
GS
=10V, I
D
=20A
Gate-Body leakage current
V
DS
=V
GS，
I
D
=250µA
V
DS
=0V, V
GS
=±20V
Electrical Characteristics (T
J
=25°C unless otherwise noted)
STATIC PARAMETERS
Parameter Conditions
Drain-Source Breakdown Voltage I
D
=250µA, V
GS
=0V
I
DSS
µA
Zero Gate Voltage Drain Current
t
f
14
ns
t
rr
39 ns
Q
rr
140 nC
APPLICATIONS OR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES
NOT ASSUME ANY LIABILITY ARISING OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO
IMPROVE PRODUCT DESIGN,FUNCTIONS AND RELIABILITY WITHOUT NOTICE.
I
F
=20A, dI/dt=500A/µs
Body Diode Reverse Recovery Charge
Body Diode Reverse Recovery Time
I
F
=20A, dI/dt=500A/µs
Turn-Off Fall Time
A. The value of RθJA is measured with the device mounted on 1in2FR-4 board with 2oz. Copper, in a still air environment with TA=25°C. The
Power dissipation PDSM is based on R θJA and the maximum allowed junction temperature of 150°C. The value in any given application depends on
the user's specific board design, and the maximum temperature of 175°C may be used if the PCB allows it.
B. The power dissipation PDis based on TJ(MAX)=175°C, using junction-to-case thermal resistance, and is more useful in setting the upper
dissipation limit for cases where additional heatsinking is used.
C. Repetitive rating, pulse width limited by junction temperature TJ(MAX)=175°C. Ratings are based on low frequency and duty cycles to keep initial
TJ =25°C.
D. The RθJA is the sum of the thermal impedance from junction to case RθJC and case to ambient.
E. The static characteristics in Figures 1 to 6 are obtained using <300µs pulses, duty cycle 0.5% max.
F. These curves are based on the junction-to-case thermal impedance which is measured with the device mounted to a large heatsink, assuming a
maximum junction temperature of TJ(MAX)=175°C. The SOA curve provides a single pulse rating.
G. The maximum current limited by package.
H. These tests are performed with the device mounted on 1 in2FR-4 board with 2oz. Copper, in a still air environment with TA=25°
C.
I. The spike duty cycle 5% max, limited by junction temperature TJ(MAX)=120°C.
Rev.4.0: July 2016 www.aosmd.com Page 2 of 7
AOT298L/AOB298L/AOTF298L
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
17
5
2
10
0
18
0
20
40
60
80
100
2345678
ID(A)
VGS(Volts)
Figure 2: Transfer Characteristics (Note E)
8
10
12
14
16
18
20
0 5 10 15 20 25 30
RDS(ON) (mΩ)
ID(A)
Figure 3: On-Resistance vs. Drain Current and Gate
Voltage (Note E)
0.8
1
1.2
1.4
1.6
1.8
2
2.2
0 25 50 75 100 125 150 175 200
Normalized On-Resistance
Temperature (°C)
Figure 4: On-Resistance vs. Junction Temperature
(Note E)
VGS=10V
I
D
=20A
25°C
125°C
V
DS
=5V
VGS=10V
0
20
40
60
80
100
0 1 2 3 4 5
ID(A)
VDS (Volts)
Fig 1: On-Region Characteristics (Note E)
6V
7V
10V
VGS=5V
40
1.0E-05
1.0E-04
1.0E-03
1.0E-02
1.0E-01
1.0E+00
1.0E+01
1.0E+02
0.0 0.2 0.4 0.6 0.8 1.0 1.2
IS(A)
VSD (Volts)
Figure 6: Body-Diode Characteristics (Note E)
25°C
125°C
(Note E)
8
16
24
32
40
5 6 7 8 9 10
RDS(ON) (mΩ)
VGS (Volts)
Figure 5: On-Resistance vs. Gate-Source Voltage
(Note E)
ID=20A
25°C
125°C
Rev.4.0: July 2016 www.aosmd.com Page 3 of 7
AOT298L/AOB298L/AOTF298L
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
17
5
2
10
0
18
0
2
4
6
8
10
0 4 8 12 16 20
VGS (Volts)
Qg(nC)
Figure 7: Gate-Charge Characteristics
0
400
800
1200
1600
2000
0 20 40 60 80 100
Capacitance (pF)
VDS (Volts)
Figure 8: Capacitance Characteristics
Ciss
0
200
400
600
800
0.0001 0.001 0.01 0.1 1 10 100
Power (W)
Pulse Width (s)
Figure 10: Single Pulse Power Rating Junction-to-Case
Coss
C
rss
VDS=50V
ID=20A
TJ(Max)=175°C
TC=25°C
10
µ
s
0.0
0.1
1.0
10.0
100.0
1000.0
0.01 0.1 1 10 100 1000
ID(Amps)
VDS (Volts)
Figure 9: Maximum Forward Biased Safe Operating
Area for AOT298L and AOB298L (Note F)
10
µ
10ms
1ms
DC
RDS(ON)
limited
TJ(Max)=175°C
TC=25°C
100
µ
40
for AOT298L and AOB298L (Note F)
0.001
0.01
0.1
1
10
1E-05 0.0001 0.001 0.01 0.1 1 10 100
ZθJC Normalized Transient
Thermal Resistance
Pulse Width (s)
Figure 11: Normalized Maximum Transient Thermal Impedance for AOT298L and AOB298L (Note F)
Single Pulse
D=Ton/T
TJ,PK=TC+PDM.ZθJC.RθJC
T
on
T
P
D
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
Area for AOT298L and AOB298L (Note F)
RθJC=1.5°C/W
Rev.4.0: July 2016 www.aosmd.com Page 4 of 7
AOT298L/AOB298L/AOTF298L
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
17
5
2
10
0
18
40
0.0
0.1
1.0
10.0
100.0
1000.0
0.01 0.1 1 10 100 1000
ID(Amps)
VDS (Volts)
Figure 12: Maximum Forward Biased
Safe Operating Area for AOTF298L
(Note F)
10
µ
s
10ms
1ms
DC
RDS(ON)
limited
TJ(Max)=175°C
TC=25°C
100
µ
s
0
200
400
600
800
0.0001 0.001 0.01 0.1 1 10 100
Power (W)
Pulse Width (s)
Figure 13: Single Pulse Power Rating Junction-to-Case for
AOTF298L (Note F)
0.01
0.1
1
10
1E-05 0.0001 0.001 0.01 0.1 1 10 100
ZθJC Normalized Transient
Thermal Resistance
Pulse Width (s)
Figure 14: Normalized Maximum Transient Thermal Impedance for AOTF298L (Note F)
Single Pulse
D=Ton/T
TJ,PK=TC+PDM.ZθJC.RθJC
T
on
T
P
D
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
TJ(Max)=175°C
TC=25°C
RθJC=4.5°C/W
0
10
20
30
40
0 25 50 75 100 125 150 175
Power Dissipation (W)
TCASE (°C)
Figure 16: Power De-rating for AOTF298L (Note
F)
0
10
20
30
40
50
0 25 50 75 100 125 150 175
Current rating ID(A)
TCASE (°C)
Figure 15: Current De-rating for AOTF298 (Note
F)
Rev.4.0: July 2016 www.aosmd.com Page 5 of 7
AOT298L/AOB298L/AOTF298L
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
17
5
2
10
0
18
0
30
60
90
120
0 25 50 75 100 125 150 175
Power Dissipation (W)
TCASE (°C)
Figure 18: Power De-rating for AOT298L and
AOB298L (Note F)
0
20
40
60
80
0 25 50 75 100 125 150 175
Current rating ID(A)
TCASE (°C)
Figure 17: Current De-rating for AOT298L and
AOB298L (Note F)
1
10
100
1000
10000
1E-05 0.001 0.1 10 1000
Power (W)
Pulse Width (s)
Figure 20: Single Pulse Power Rating Junction
-
to
-
TA=25°C
10
100
1 10 100
IAR (A) Peak Avalanche Current
Time in avalanche, tA(µs)
Figure 19: Single Pulse Avalanche capability
TA=25°C
TA=150°C
TA=100°C
TA=125°C
40
0.001
0.01
0.1
1
10
0.001 0.01 0.1 1 10 100 1000
ZθJA Normalized Transient
Thermal Resistance
Pulse Width (s)
Figure 21: Normalized Maximum Transient Thermal Impedance (Note H)
Single Pulse
D=Ton/T
TJ,PK=TA+PDM.ZθJA.RθJA
T
on
T
P
D
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
Figure 20: Single Pulse Power Rating Junction
-
to
-
Ambient (Note H)
RθJA=60°C/W
Figure 19: Single Pulse Avalanche capability
(Note C)
Rev.4.0: July 2016 www.aosmd.com Page 6 of 7
AOT298L/AOB298L/AOTF298L
-
+
VDC
Ig
Vds
DUT
-
+
VDC
Vgs
Vgs
10V
Qg
Qgs Qgd
Charge
Gate Charge Test Circuit & Waveform
-
+
VD C
DUT Vdd
Vgs
Vds
Vgs
RL
Rg
Vgs
Vds
10%
90%
Resistive Switching Test Circuit & Waveforms
t t
r
d(on)
t
on
t
d(off)
t
f
t
off
Id
+
L
Vds
BV
Unclamped Inductive Switching (UIS) Test Circuit & Waveforms
Vds
DSS
2
E = 1/2 LI
AR
AR
Vdd
Vgs
Vgs
Rg
DUT
-
+
VDC
Vgs
Id
Vgs
I
Ig
Vgs
-
+
VDC
DUT
L
Vgs
Vds
Isd
Isd
Diode Recovery Test Circuit & Waveforms
Vds -
Vds +
I
F
AR
dI/dt
I
RM
rr
Vdd
Vdd
Q = - Idt
t
rr
Rev.4.0: July 2016 www.aosmd.com Page 7 of 7