BSP317P
SIPMOS
Small-Signal-Transistor Product Summary
VDS -250 V
RDS(on) 4Ω
ID-0.43 A
Feature
• P-Channel
• Enhancement mode
• Logic Level
•dv/dtrated PG-SOT223
VPS05163
123
4
Gate
pin1
Drain
pin 2/4
Source
pin 3
Marking
BSP317P
Type Package Tape and Reel Information
BSP317P PG-SOT223 L6327: 1000 pcs/reel
Maximum Ratings, at T
j
= 25 °C, unless otherwise specified
Parameter Symbol Value Unit
Continuous drain current
T
A
=25°C
T
A
=70°C
I
D
-0.43
-0.34
A
Pulsed drain current
T
A
=25°C
I
D puls
-1.72
Reverse diode dv/dt
I
S
=-0.43A, V
DS
=-200V, di/dt=-200A/µs, T
jmax
=150°C
dv/dt6kV/µs
Gate source voltage
V
GS
±20 V
Power dissipation
T
A
=25°C
P
tot
1.8 W
Operating and storage temperature
T
j,
T
stg
-55... +150 °C
IEC climatic category; DIN IEC 68-1 55/150/56
20110419
Rev.1.6 Page 1
xQualified according to AEC Q101
Packaging
Non dryBSP317P
5
2.1
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BSP317P
Thermal Characteristics
Parameter Symbol Values Unit
min. typ. max.
Characteristics
Thermal resistance, junction - soldering point
(Pin 4)
RthJS - 15 25 K/W
SMD version, device on PCB:
@ min. footprint
@ 6 cm2 cooling area 1)
RthJA
-
-
80
48
115
70
Electrical Characteristics, at Tj = 25 °C, unless otherwise specified
Parameter Symbol Values Unit
min. typ. max.
Static Characteristics
Drain-source breakdown voltage
VGS=0, ID=-250µA
V(BR)DSS -250 - - V
Gate threshold voltage, VGS = VDS
ID=-370µA
VGS(th) -1 -1.5 -2
Zero gate voltage drain current
VDS=-250V, VGS=0, Tj=25°C
VDS=-250V, VGS=0, Tj=150°C
IDSS
-
-
-0.1
-10
-0.2
-100
µA
Gate-source leakage current
VGS=-20V, VDS=0
IGSS - -10 -100 nA
Drain-source on-state resistance
VGS=-4.5V, ID=-0.39A
RDS(on) - 3.3 5 Ω
Drain-source on-state resistance
VGS=-10V, ID=-0.43A
RDS(on) - 3 4
1Device on 40mm*40mm*1.5mm epoxy PCB FR4 with 6cm² (one layer, 70 µm thick) copper area for drain
connection. PCB is vertical without blown air.
20110419
Rev.2.1Page 2
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BSP317P
Electrical Characteristics, at Tj = 25 °C, unless otherwise specified
Parameter Symbol Conditions Values Unit
min. typ. max.
Dynamic Characteristics
Transconductance gfs |VDS|≥2*|ID|*RDS(on)max ,
ID=-0.34A
0.38 0.76 - S
Input capacitance Ciss VGS=0, VDS=-25V,
f=1MHz
- 210 262 pF
Output capacitance Coss - 30 37
Reverse transfer capacitance Crss - 13.4 16.7
Turn-on delay time td(on) VDD=-30V, VGS=-10V,
ID=-0.43A, RG=6Ω
- 5.7 8.5 ns
Rise time tr- 11.1 16.6
Turn-off delay time td(off) - 254 381
Fall time tf- 67 100
Gate Charge Characteristics
Gate to source charge Qgs VDD=-200V, ID=-0.43A - -0.5 -0.65 nC
Gate to drain charge Qgd - -4 -5.2
Gate charge total QgVDD=-200V, ID=-0.43A,
VGS=0 to -10V
- -11.6 -15.1
Gate plateau voltage V(plateau) VDD=-200V, ID=-0.43A - -2.8 - V
Reverse Diode
Inverse diode continuous
forward current
ISTA=25°C - - -0.43 A
Inv. diode direct current, pulsed ISM - - -1.72
Inverse diode forward voltage VSD VGS=0, IF=-0.43A - -0.84 -1.2 V
Reverse recovery time trr VR=-125V, IF=lS,
diF/dt=100A/µs
- 92 138 ns
Reverse recovery charge Qrr - 210 315 nC
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Rev.2.1Page 3
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BSP317P
1 Power dissipation
Ptot = f(TA)
0 20 40 60 80 100 120 °C 160
TA
0
0.2
0.4
0.6
0.8
1
1.2
1.4
1.6
W
1.9 BSP 317 P
Ptot
2 Drain current
ID=f(TA)
parameter: |VGS|≥ 10V
0 20 40 60 80 100 120 °C 160
TA
0
-0.05
-0.1
-0.15
-0.2
-0.25
-0.3
-0.35
-0.4
A
-0.5 BSP 317 P
ID
3 Safe operating area
ID= f ( VDS )
parameter : D = 0 , T
A
= 25°C
-10 -1 -10 0-10 1-10 2-10 3
V
VDS
-3
-10
-2
-10
-1
-10
0
-10
1
-10
A
BSP 317 P
ID
R
DS(on)
=V
DS
/I
D
DC
10 ms
1 ms
tp = 140.0µs
4 Transient thermal impedance
ZthJA = f(tp)
parameter : D=tp/T
10 -7 10 -6 10 -5 10 -4 10 -3 10 -2 10 0
s
tp
-4
10
-3
10
-2
10
-1
10
0
10
1
10
2
10
K/W
BSP 317 P
ZthJA
single pulse 0.01
0.02
0.05
0.10
0.20
D = 0.50
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BSP317P
5 Typ. output characteristic
ID = f (VDS)
parameter: Tj =25°C, -VGS
0 0.5 1 1.5 2 2.5 3 3.5 4 V5
-VDS
0
0.2
0.4
0.6
0.8
1
1.2
A
1.6
-ID
10V
5V
4.4V
3.6V
3.2V
2.8V
2.4V
2.2V
6 Typ. drain-source on resistance
RDS(on) = f(ID)
parameter: VGS;Tj =25°C, -VGS
0 0.2 0.4 0.6 0.8 1 1.2 A1.6
-ID
0
1
2
3
4
5
6
7
8
Ω
10
RDS(on)
2.2V
2.4V
2.8V
3.2V
3.6V
4.4V
5V
10V
7 Typ. transfer characteristics
ID= f ( VGS ); |VDS|≥ 2 x |ID| x RDS(on)max
parameter: Tj = 25 °C
0 0.4 0.8 1.2 1.6 2 2.4 2.8 V3.6
-VGS
0
0.2
0.4
0.6
0.8
1
1.2
A
1.6
-ID
8 Typ. forward transconductance
gfs = f(ID)
parameter: Tj =25°C
0 0.2 0.4 0.6 0.8 1 1.2 A1.6
-ID
0
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0.8
0.9
1
1.1
1.2
S
1.4
gfs
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Rev.2.1Page 5
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BSP317P
9 Drain-source on-state resistance
RDS(on) = f(Tj)
parameter : ID = -0.43 A, VGS = -10 V
-60 -20 20 60 100 °C 180
Tj
0
1
2
3
4
5
6
7
8
9
Ω
11 BSP 317 P
RDS(on)
typ
98%
10 Typ. gate threshold voltage
VGS(th) = f (Tj)
parameter: VGS = VDS
-60 -20 20 60 100 °C 160
Tj
0
0.2
0.4
0.6
0.8
1
1.2
1.4
1.6
1.8
2
V
2.4
VGS(th)
2%
typ.
98%
11 Typ. capacitances
C = f(VDS)
parameter: VGS=0, f=1 MHz, Tj = 25°C
0 4 8 12 16 20 24 28 V36
-VDS
0
10
1
10
2
10
3
10
pF
C
Ciss
Coss
Crss
12 Forward character. of reverse diode
IF = f (VSD)
parameter: Tj
0 -0.4 -0.8 -1.2 -1.6 -2 -2.4 V-3
VSD
-2
-10
-1
-10
0
-10
1
-10
A
BSP 317 P
IF
Tj = 25 °C typ
Tj = 25 °C (98%)
Tj = 150 °C typ
Tj = 150 °C (98%)
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BSP317P
13 Typ. gate charge
VGS =f (QGate)
parameter: ID = -0.43 A pulsed, Tj = 25°C
0 2 4 6 8 10 12 14 nC 18
|QG|
0
-2
-4
-6
-8
-10
-12
V
-16 BSP 317 P
VGS
20%
50%
80%
14 Drain-source breakdown voltage
V(BR)DSS = f(Tj)
-60 -20 20 60 100 °C 180
Tj
-225
-230
-235
-240
-245
-250
-255
-260
-265
-270
-275
-280
-285
V
-300
BSP 317 P
V(BR)DSS
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BSP317P
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