HIGH FREQUENCY DEVICES GAAS FIELD EFFECT TRANSISTORS POWER FET'S XMFP Series FEATURES High power output Excellent linear power gain APPLICATIONS C-band power amps up to 6GHz Wireless telecommunication base stations (GSM, DCS, PCS, ISM, etc.) DIMENSIONS: mm XMFP1-M3 XMFP2-M3 XMFP3-M3 4.5 4.5 A B A k M 0.42 0.47 0.42 B 2.5 B k M 1.0 0.42 0.47 0.42 A 0.5 B 2.5 1.1 0.4 0.4 0.42 0.47 0.42 Pin Gate Source Drain 0.5 2.5 1.0 1.1 0.4 1.5 Marking A : Part No. B : Lot No. Plastic with Heat Sink C k M 1.0 1.1 1.5 Pin Gate Source Drain 4.5 A 0.5 1.5 Marking A : Part No. B : Lot No. Plastic with Heat Sink Pin Gate Source Drain Marking A : Part No. B : Lot No. Plastic with Heat Sink SPECIFICATIONS Test Conditions XMFP1-M3 Min. Typ. Max. Test Min. Typ. Max. Test Test Conditions gm VGS (OFF) IG = -50A VDS = 3V ID = 120mA VDS = 3V ID = 1mA 200mA 280mA 350mA 70mS 100mS -- -3.8V -2.8V -2.0V VDS = 3V VGS = 0V VDS = 3V VDS = 3V 400mA 550mA 700mA VDS = 5V 150mS 220mS -- -- -- -8V -- -- -8V IG = -600A Conditions XMFP3-M3 IDSS (*1) VDS = 3V VGS = 0V IG = -100A Conditions XMFP2-M3 VGDO Min. Typ. Max. -- -- -12V IG = -1200A VGS = 0V 1.2A 1.7A 2.2A VDS = 5V VGS = 0V ID = 270mA VDS = 5V ID = 600mA 450mS 520mS -- VDS = 5V ID = 600mA PO (*2) 23dBm -- 45% -- 16dB -- Rth (*3) Channel to case -- -- 100C/W Channel to -- (*2: PIN = 15dBm) -- -- 26dBm -- 45% -- 15dB -- case -- -- VDS = 4V, ID = 0.8A, f = 1.9GHz ID = 3mA -4.0V -3.0V -2.0V VDS = 3V ID = 6mA GLP VDS = 4V, ID = 0.5IDSS, f = 1.9GHz ID = 1mA -3.8V -2.8V -2.0V VDS = 3V add (*2) VDS = 4V, ID = 0.5IDSS, f = 1.9GHz (*2: PIN = 10dBm) -- -- -- -- (*2: PIN = 20dBm) -- -- 30dBm -- 45% -- 12dB -- VDS = 4.8V, ID = 1.6A, f = 0.9GHz (*2: PIN = 24dBm) 50C/W Channel to case -- -- 30C/W Channel to case *1: Pulsed Measurement: duty cycle 1:100; tON = 100ms Ta = 25C *3: DVf Measurement For more detailed information regarding this product line, see Catalog No. 0-35-E, or see Murata Electronics' web page for .pdf files and S-parameters (www.murata.com). 286 CG01-J