286 CG01-J
HIGH FREQUENCY DEVICES
GAASFIELD EFFECT TRANSISTORS
POWER FET’S
FEATURES
■High power output
■Excellent linear power gain
APPLICATIONS
■C-band power amps up to 6GHz
■Wireless telecommunication base stations (GSM, DCS,
PCS, ISM, etc.)
DIMENSIONS: mm
XMFP1-M3 XMFP2-M3 XMFP3-M3
SPECIFICATIONS
VGDO IDSS (*1) gm VGS (OFF) PO(*2) add (*2) GLP Rth (*3)
Test IG= –50AVDS = 3V VDS = 3V VDS = 3V VDS = 4V, ID= 0.5IDSS, f = 1.9GHz Channel to
Conditions VGS = 0V ID= 120mA ID= 1mA (*2: PIN = 10dBm) case
Min. —200mA 70mS –3.8V ————
XMFP1-M3 Typ. —280mA 100mS –2.8V 23dBm 45% 16dB —
Max. –8V 350mA —–2.0V —— —
100°C/W
Test IG= –100AVDS = 3V VDS = 3V VDS = 3V VDS = 4V, ID= 0.5IDSS, f = 1.9GHz Channel to
Conditions VGS = 0V ID= 270mA ID= 1mA (*2: PIN = 15dBm) case
Min. —400mA 150mS –3.8V ————
XMFP2-M3 Typ. —550mA 220mS –2.8V 26dBm 45% 15dB —
Max. –8V 700mA —–2.0V —— —
50°C/W
Test IG= –600AVDS = 5V VDS = 5V VDS = 3V VDS = 4V, ID= 0.8A, f = 1.9GHz Channel to
Conditions VGS = 0V ID= 600mA ID= 3mA (*2: PIN = 20dBm) case
Min. —1.2A 450mS –4.0V ————
XMFP3-M3 Typ. —1.7A 520mS –3.0V 30dBm 45% 12dB —
Max. –12V 2.2A —–2.0V —— —
30°C/W
Test IG= –1200AVDS = 5V VDS = 5V VDS = 3V VDS = 4.8V, ID= 1.6A, f = 0.9GHz Channel to
Conditions VGS = 0V ID= 600mA ID= 6mA (*2: PIN = 24dBm) case
0.4
1.1
1.0
2.5
0.5
1.5
0.42 0.47 0.42
4.5
Pin Marking
Gate A : Part No.
Source B : Lot No.
Drain Plastic with Heat Sink
Pin Marking
Gate A : Part No.
Source B : Lot No.
Drain Plastic with Heat Sink
Pin Marking
Gate A : Part No.
Source B : Lot No.
Drain Plastic with Heat Sink
*1: Pulsed Measurement: duty cycle 1:100; tON = 100ms Ta = 25°C
*3: DVf Measurement
For more detailed information regarding this product line, see Catalog No. 0-35-E, or see Murata Electronics’ web page for .pdf files and S-parameters (www.murata.com).
M
Ak
0.4
1.1
1.0
2.5
0.5
1.5
0.42 0.47 0.42
4.5
Bk
0.4
1.1
1.0
2.5
0.5
1.5
0.42 0.47 0.42
4.5
Ck
AB AB AB
MM
XMFP Series
