DATA SH EET
Product specification 1998 Dec 08
DISCRETE SEMICONDUCTORS
BAT160 series
Schottky barrier double diodes
halfpage
M3D087
1998 Dec 08 2
Philips Semiconductors Product specification
Schottky barrier double diodes BAT160 series
FEATURES
Low switching losses
Capability of absorbing very high
surge current
Fast recovery time
Guard ring protected
Plastic SMD package.
APPLICATIONS
Low power switched-mode power
supplies
Rectification
Polarity protection.
DESCRIPTION
Planar Schottky barrier double diodes
encapsulated in a SOT223 plastic
SMD package
PINNING
PIN BAT160
ACS
1k
1a
1a
1
2 n.c. n.c. n.c.
3k
2a
2k
2
4a
1
, a2k1, k2k1, a2
Fig.1 Simplified outline
(SOT223) and pin
configuration.
a
ge
4
123
MSB002 - 1
Top view
Fig.2 BAT160A diode
configuration (symbol).
p
age
MGL171
13
2 n.c.
4
Fig.3 BAT160C diode
configuration (symbol).
p
age
MGL172
13
2 n.c.
4
Fig.4 BAT160S diode
configuration (symbol).
p
age
MGL173
13
4
2 n.c.
MARKING
TYPE NUMBER MARKING
CODE
BAT160A AT160A
BAT160C AT160C
BAT160S AT160S
1998 Dec 08 3
Philips Semiconductors Product specification
Schottky barrier double diodes BAT160 series
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
ELECTRICAL CHARACTERISTICS
Tamb =25°C unless otherwise specified.
Note
1. Pulse test: tp= 300 µs; δ= 0.02.
THERMAL CHARACTERISTICS
Note
1. Refer to SOT223 standard mounting conditions.
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
Per diode
VRcontinuous reverse voltage 60 V
IFcontinuous forward current 1A
I
FSM non-repetitive peak forward current tp= 8.3 ms; half sinewave;
JEDEC method 10 A
IRSM non-repetitive peak reverse current tp= 100 µs0.5 A
Tstg storage temperature 65 +150 °C
Tjjunction temperature 150 °C
SYMBOL PARAMETER CONDITIONS MAX. UNIT
Per diode
VFforward voltage see Fig.5
IF= 100 mA 400 mV
IF=1A 650 mV
IF=2A 850 mV
IRreverse current VR= 60 V; note 1; see Fig.6 350 µA
VR= 60 V; Tj= 100 °C; note 1;
see Fig.6 8mA
Cddiode capacitance f = 1 MHz; VR= 4 V; see Fig.7 60 pF
SYMBOL PARAMETER CONDITIONS VALUE UNIT
Rth j-a thermal resistance from junction to ambient note 1 100 K/W
1998 Dec 08 4
Philips Semiconductors Product specification
Schottky barrier double diodes BAT160 series
GRAPHICAL DATA
(1) Tamb = 125 °C.
(2) Tamb = 100 °C. (3) Tamb =75°C.
(4) Tamb =25°C.
Fig.5 Forward current as a function of forward
voltage; typical values.
handbook, halfpage
30
VF (V)
IF
(mA)
010 20
104
103
102
10
1
MGL514
(1) (2) (3) (4)
(1) Tamb = 125 °C.
(2) Tamb = 100 °C. (3) Tamb =75°C.
(4) Tamb =25°C.
Fig.6 Reverse current as a function of reverse
voltage; typical values.
handbook, halfpage
6020 VR (V)
IR
(µA)
040
105
104
103
102
1
10
101
MGL515
(4)
(3)
(2)
(1)
Fig.7 Diode capacitance as a function of reverse
voltage; typical values.
f = 1 MHz; Tamb =25°C.
handbook, halfpage
60
VR (V)
Cd
(pF)
02040
103
102
10
MGL513
1998 Dec 08 5
Philips Semiconductors Product specification
Schottky barrier double diodes BAT160 series
PACKAGE OUTLINE
UNIT A1bpcDEe
1H
EL
pQywv
REFERENCES
OUTLINE
VERSION EUROPEAN
PROJECTION ISSUE DATE
IEC JEDEC EIAJ
mm 0.10
0.01
1.8
1.5 0.80
0.60
b1
3.1
2.9 0.32
0.22 6.7
6.3 3.7
3.3 2.3
e
4.6 7.3
6.7 1.1
0.7 0.95
0.85 0.1 0.10.2
DIMENSIONS (mm are the original dimensions)
SOT223 96-11-11
97-02-28
wM
bp
D
b1
e1
e
A
A1
Lp
Q
detail X
HE
E
vMA
AB
B
c
y
0 2 4 mm
scale
A
X
132
4
Plastic surface mounted package; collector pad for good heat transfer; 4 leads SOT223
1998 Dec 08 6
Philips Semiconductors Product specification
Schottky barrier double diodes BAT160 series
DEFINITIONS
LIFE SUPPORT APPLICATIONS
These products are not designed for use in life support appliances, devices, or systems where malfunction of these
products can reasonably be expected to result in personal injury. Philips customers using or selling these products for
use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such
improper use or sale.
Data sheet status
Objective specification This data sheet contains target or goal specifications for product development.
Preliminary specification This data sheet contains preliminary data; supplementary data may be published later.
Product specification This data sheet contains final product specifications.
Limiting values
Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or
more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation
of the device at these or at any other conditions above those given in the Characteristics sections of the specification
is not implied. Exposure to limiting values for extended periods may affect device reliability.
Application information
Where application information is given, it is advisory and does not form part of the specification.
1998 Dec 08 7
Philips Semiconductors Product specification
Schottky barrier double diodes BAT160 series
NOTES
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Philips Semiconductors – a worldwide company
© Philips Electronics N.V. 1998 SCA60
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Printed in The Netherlands 135106/00/01/pp8 Date of release: 1998 Dec 08 Document order number: 9397 750 04638