4329 AMERICAN POWER DEVICES CSE D MM 0737135 00000195 9 mm ff -ff~ a7 | I 250mW, TC DO-7 Case DO-7 Case Voltage Typical! Type a Vonage cu rant bynamic Impedance vesteetity re Tempe Temperature o96 +01 Vz_ IW Gy 27, @ iy AV>7 Max. 020+ 002 Vv Vv mA a mV SiC | 1N821 15 96 55 to +100 01 cs NEAT co les | 7 9 ag | sto +190 | | 5. . 5 8 55 to + : 1N823A 10 48 55 to +100 005 as 4 ses oss [rus-+ 1N825 15 19 55 to +100 .002 1N825A 10 19 55 to +100 .002 1N827 15 9 55 to +100 (001 1N827A | 5.9 | 65 7.5 10 9 55 to +100 001 1N829 15 5 55 to +100 .0005 1N829A i0 5 55 to +100 -0005 }Zener impedance is derived from the 1kHz voltage created when AC current with RMS value of 10% of DC zener test current is superimposed on the test current. 250 mW, TC DO-7 Case Type Nominal Test Maximum Tevaltage Temperature Temtptcal ypet Zener Voltage Current | Dynamic Impedance St eili Range Coctficlent Vz+ bt Zr @ bt AVz7 Max. Vv mA a mv C SiC 1N4765 68 Oto + 75 0.01 ina | 08 860 we | ott 78 | 0.008 1N4766A 70 55 to +100 0.005 1N4767 14 Oto+ 75 0.002 Naren | 8 08 360 7 | otor 78 | O.00t 1N4768A 14 55 to +100 0.001 1N4769 0.5 350 3 Oto+ 75 0.005 1N4769A 9.1 0.5 350 7 55 to +100 0.005 1N4770 . 1.0 200 68 Oto+ 75 0.01 1N4770A 1.0 200 141 55 to +100 0.01 1N4771 34 Oto + 75 0.005 Wes | et 10 | amo |) BB | oa o+ . 1N4772A 28 55 to +100 0.002 1N4773 7 Oto + 75 9.001 Wes | 91 | so | amo fg) ROG] aes 7: . 0 + . 1N4774A 7 55 to +100 0.0005 Standard tolerance is +5%. }Zener impedance Is derived from the 1kHz voltage created when AC current with RMS value of 10% of DC zener test current is superimposed on the test current. 250 mW, TC DO-7 Case Voltage Typical Zener Voltage Test Maximum Temperature Type Min. Max. Current Dynamic Impedance} baste Range Temperature Vz Vz lot 27T @ 27 AVzz Max. Vv Vv mA Q mV C PIC 1N3496 23 .005 1N3497 9 .002 1N3498 5.9 6.5 7.5 16 5 Oto +75 .001 1N3499 2 .0005 1N3500 47 01 $Zener impedance is derived from the 60 Hz voltage created when AC current with RMS value of 10% of DC zener test current is superimposed on the test current. A-12 : These silicon devices are low level, temperature-compensated, zener refer- ence diodes. Oxide-passivated junc- tions give long term stability and make these diodes highly reliable reference sources. Glass-enclosed construction provides a rugged, hermetically-sealed unit. DO-7 Case