Ordering number: EN 326H 2SB560/2SD438 PNP/NPN Epitaxial Planar Silicon Transistors Low-Frequency Power Amp Applications The 25B560/2SD438 are epitaxial planar transistors for complementary push-pull pair having high reverse voltage and low saturation voltage, and suitable universal AF power amplifier use. . ( ):2SB560 Absolute Maximum Ratings at Ta=25C unit Collector. to Base Voltage Vego (=)100 v Collector to Emitter Voltage Vorg (-)80 Vv Emitter to Base Voltage VEBO (=)5 Vv Collector Current Io (-)0.7 A Collector Current(Pulse) Igp (=)1.0 A Collector Dissipation Po 900. s aW Junction Temperature Tj 150 % Storage Temperature Tstg -55 to +150 % Electrical Characteristics at Ta=25C min typ max unit ' Collector Cutoff Current Toro Vop=(-)20V,1,=0 (-)1.0 4A Emitter Cutoff Current Ipp Vep=(-)4V,Ip=0 (-)1,0 A DC Current Gain heett) Vog=(-)5V,Ip=(-)50mA 60* 560% : hpp(2) Vop2(-)5V,Ig=(-)0.5A 30 Gain-Bandwidth Product fr Vog=(-) 10V,Ip=(~)50mA 100 MHz Output Capacitance Cop Vopz(-) 10V, f= 1MHz (15) pF 10 pF C-B Breakdown Voltage V(BR)CBO Ige1QvA (~)100 Vv C-E Breakdown Voltage = V(prycgo Ic=1mA,Rpp=0o (-)80 Vv E-B Breakdown Voltage = V pry ppg Ig2(-) 107A, 1,20 (=)5 Vv C-E Saturation Voltage Veg(sat) I=(-)500mA,Ip=(~)50mA (-0.3)(-0.8) Vv 0.2 0.6 Vv v B-E Saturation Voltage VpE(sat) Ig=(-)500mA,Ip=(-)50mA (-)0.85(-)1.2 #* The 2S8B560/2SD438 are classified by 50mA hp, as follows. 160 D 1201100 E 2001160 F 320 | 280 E 560 | Case Outline 2006A (unit:mm) 0.5 i %.0 ne EIAJ: C-51 B: Base SANYO: MP C: Collector E: Emitter Specifications and information herein are subject to change without notice. SANYO Electric Co.,Ltd. Semiconductor Business Headquarters TOKYO OFFICE Tokyo Bidg.,1-10,1 Chome, Ueno, Taito-ku, TOKYO, 110 JAPAN Me 7997076 0015719 958 MM 5110M0/3267AT/3085MY,TS No.326-1/3 256 2$B560/2SD438 3 $ o H . ey a o be & 3 o he Q pxy Q o a ea o -04 -06 08 = - - Base to Emitter Voltage, Vp, -V Ic - V s 8 3mA 2mA mA Collector Current,Ip - mA Ip=0 0 2 -4 -8 =10 12 Collector to Emitter Voltage, Voz - V Are - Ic nN Ww ws DC Current Gain, bps wo 8 -1.0 3 0 23 5 wo 2 5 -900 23 5 Collector Current,I, - mA ft - I S mw wna 8 Oe) wn Gain-Bandwidth Product,f ~ MHz -1.0 ~10 Collector Current,I, - mA -100 me 7997076 0015720 L?T 8. 8 Collector Current,I = mA by 8 o Base to Emitter Voltage, Var ~V Ir - V, 1000 a 280438 7a # 800 w SmA Am eo 5 3mA 5 2 2mA 2 4 200 a ima e 0 . Tp=0 0 2 4 6 8 10 12 Collector to Emitter Voltage, Yor -V hee - I 100 7 ta 28438 s cE= Gg wt og o ri 3 00 7 6 5 8 3 1.0 10 400 1000 Collector Current,I, - mA fy - 1 Nn 3 = o wns w Gain-Bandwidth Product,f, - MHz 1 10 5 7 100 Collector Current Ig - 5A 257 25B560/2SD438 - VcB ~ Vee = Qo 3 w x ~ oa 3 Output Capacitance,c,, - pF Output Capacitance,c,, - pF 1 10 3 10 Collector to Base Voltage,Vop - V Collector to Base Voltage,Vop - V As 0 ASO 288560 lee Sat S827 on & Collector Current,I, - mA ' . 8 Collector Current,I, - mA =25C =25C -1.0 " 10 100 1.0 10 Collector to Emitter Voltage , Vor - Vv Collector to Emitter Voltage, Vop - V 100 Po - T Collector Dissipation,P, - mW uO Ambient Temperature,Ta - C me 7997076 0015721 SOb 258 CASE OUTLINES OF LEAD FORMED SMALL SIGNAL TRANSISTORS typical values. @ No marking is indicated. @ All of Sanyo lead formed small signal transistor case outlines are illustrated below. @ All dimensions are in mm, and dimensions which are not followed by min. or max. are represented by 2.0 Case Outline 2003A/2003B (unit : mm) Case Outline 2019A/2019B (unit : mm) 2.0 0.44 2.0 0.46 tt pom 29 SE 29 3 Li) ~ 4 0.65 5. * 4.0 5.0 14.0 +] 40 JEDEC :TO-92 1: Source JEDEC 2702 1: Bmitter BIAS: SC-43 2: Gate EIAJ :SC-43 2: Collector SANYO :NP 3. Drain SANYO : NP 3: Base 74h . Case Outline 2004A (unit : mm) Case Outline 2033 (unit : mm) 0.44 2.2 + 3 >} 15.0 | Reds 2 rs 2p aq ., |-pe te m 492 wy FF =+4 ai j4 FE = [a | | 4 14.0 leo 1:Emitter * JEDEC :TO-92 1: Base 2: Collector BIAJ :SC-43 2: Emitter 3: Base SANYO : NP 3: Collector SANYO: SPA Case Outline 2005A (unit : mm) Case Outline 2034/2034A (unit : mm) 2.0 0.66 22 1.3 1.3 5.0 14.0 | 0.4 . 1: Source JEDEC :TO-92 1: Drain 2: Gate . EIAJ :SC-43 ; : Source 3: Drain . : : Gate SANYO : NP SANYO: SPA Case Outline 2006A (unit : mm) Case Outline 2040 (unit : mm) 22 3.0 0.5 pop wn Set | 2 it. b=2--f ( - {a we 4 a 42 1: Drain EIAJ :$C-61 1: Emitter 2: Source SANYO ; MP 2: Collector 3: Gate 3: Base SANYO: SPA Me 7997076 0015489 525 a 16 Case Outline 2061 (unit : mm) 2.0 0.44 45 = _ bag = a 0.45 lho oa JEDEC :TO-92 : 1: Emitter EIAJ =: SC-43 2: Base SANYO : NP 3: Collector Case Outline 2064 (unit : mm) us 1 69 : ~ hd toe a qt} jos |S r2 3 hos. Ton Vou} 1: Emitter LOL Paty 2: CoHector | 3: Bose 2.94 254 SANYO: NMP Case Outline 2084A (unit:mm) __,, pre 10.5 LB I . 4 Lite tT }_afla.2 le 9.5. s i + | U tL to2 49 1: Emitter 2: Collector 3: Base 2.3 15) SANYO: FLP mm 7997076 0015490 240 17