NTE56068 & NTE56069
TRIAC, 16A, High Commutation
Description:
The NTE56068 and NTE56069 are glass passivated, high commutation TRIACs in an isolated full–
pack type package designed for use in circuits where high static and dynamic dV/dt and high dI/dt
can occur. These devices will commutate the full rated RMS current at the maximum rated junction
temperature, without the aid of a snubber.
Absolute Maximum Ratings:
Repetitive Peak Off–Sate Voltage (Note 1), VDRM
NTE56068 600V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
NTE56069 800V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
RMS On–State Current (Full Sine Wave, THS ≤ 38°C), IT(RMS) 16A. . . . . . . . . . . . . . . . . . . . . . . . . .
Non–Repetitive Peak On–State Current, ITSM
(Full Sine Wave, TJ = +25°C prior to Surge)
t = 20ms 140A. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
t = 16.7ms 150A. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
I2t for Fusing (t = 10ms), I2t 98A2sec. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Repetitive Rate–of–Rise of On–State Current after Triggering, dIT/dt
(ITM = 20A, IG = 0.2A, dIG/dt = 0.2A/µs) 100A/µs. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Peak Gate Current, IGM 2A. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Peak Gate Voltage, VGM 5V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Peak Gate Power, PGM 5W. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Average Gate Power (Over Any 20ms Period), PG(AV) 500mW. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Operating Junction Temperature, TJ+125°C. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Storage Temperature Range, Tstg –40° to +150°C. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Thermal Resistance, Junction–to–Heatsink (Full or Half Cycle), RthJHS
With Heatsink Compound 4.0K/W. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Without Heatsink Compound 5.5K/W. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Typical Thermal Resistance, Junction–to–Ambient, RthJA 55K/W. . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Note 1. Although no t recommended, off–state voltages up to 800V may be applied without damage,
but the TRIAC may switch to the on–state. The rate–of–rise of current should not exceed
15A/µs.
Electrical Characteristics: (TJ = +25°C unless otherwise specfied)
Parameter Symbol Test Conditions Min Typ Max Unit
Static Characteristics
Gate Trigger Current
MT2 (+), G (+) IGT VD = 12V, IT = 0.1A, Note 2 2 18 50 mA
MT2 (+), G (–) 2 21 50 mA
MT2 (–), G (–) 2 34 50 mA
Latching Current
MT2 (+), G (+) ILVD = 12V, IT = 0.1A –31 60 mA
MT2 (+), G (–)–34 90 mA
MT2 (–), G (–)–30 60 mA
Holding Current IHVD = 12V, IT = 0.1A –31 60 mA
On–State Voltage VTIT = 20A –1.2 1.5 V
Gate Trigger Voltage VGT VD = 12V, IT = 0.1A –0.7 1.5 V
VD = 400V, IT = 0.1A, TJ = +125°C 0.25 0.4 –V
Off–State Leakage Current IDVD = VDRMmax, TJ = +125°C–0.1 0.5 mA
Dynamic Characteristics
Critical Rate–of–Rise of
Off–State Voltage dVD/dt VDM = 67% VDRMmax, TJ = +125°C,
Exponential Waveform, Gate Open 1000 4000 –V/µs
Critical Rate–of–Change of
Commutating Current dIcom/dt VDM = 400V, TJ = +125°C, ITRMS = 16A ,
without Snubber, Gate Open –28 –A/ms
Gate Controlled Turn–On Time tgt ITM = 20A, VD = VDRMmax, IG = 0.1A,
dIG/dt = 5A/µs–2–µs
Isolation Characteristics
RMS Isolation Voltage from All
3 Pins to External Heatsink VISOL f = 50 – 60Hz, Sinusoidal Waveform,
R.H. ≤ 65%, Clean and Dustfree – – 2500 V
Capacitance from T2 to
External Heatsink CISOL f = 1MHz –10 –pF
Note 2. Device does not trigger in the MT2 (–), G (+) quadrant.
.126 (3.2) Dia Max
.181 (4.6) Max .405 (10.3)
Max
.114 (2.9)
.622
(15.0)
Max
.252
(6.4)
.118
(3.0)
Max
MT1
MT2
G
Isol
.100 (2.54).098 (2.5)
.531
(13.5)
Min
