NPN Silicon Planar Medium Power Darlington Transistors BCX38A BCX38B BCX38C FEATURES 1.5W power dissipation 0.8A continuous collector current @ hee up to 10,000 at I, =500mA @ Fast switching DESCRIPTION The BCX38 series of silicon planar Darlington transistors is designed for medium power applications requiring very high current gain and high input impedance. The monolithic construction has the inherent advantages of fast switching times, low saturation voltages and low leakage currents. Application areas include: driver and output stages of audio amplifiers; direct interfacing with integrated circuits; lamp, relay and hammer driving. The E-line package is formed by transfer moulding a silicone plastic specially selected to provide a rugged one-piece encapsulation ABSOLUTE MAXIMUM RATINGS Plastic E-Line (TO-92 Compatible) resistant to severe environments and allow the high junction temperature operation normally associated with metal can devices. E-line encapsulated devices are approved for use in military, industrial and professional equipments. Alternative lead configurations are available as plug-in replacements to TO-5/39 and TO-18 metal can types, and for surface mounting. Parameter Symbol Value Unit Collector-Base Voltage Veso 80 Vv Collector-Emitter Voltage (Note 1) Veceo 60 Vv Emitter-Base Voltage Veso 10 Vv Peak Pulse Current lom 2 A Continuous Collector Current Ig 800 mA Practical Power Dissipation (Note 2) Protp 1.5 w Power Dissipation at T,,,) = 25C Prot 1 Ww at Tease = 25C ~ 2 w Operating and Storage Temperature Range (Note 1) -55 to +200 C Note 1: The maximum values of Vceq and Power Dissipation are dependent on operating tempera- ture. See Voltage Derating Graph (Fig. 1) for maximum power dissipation and operating temperature in a given application. Note 2: The power which can be dissipated assuming device mounted in typical manner on PCB with copper equal to 1 sq. inch minimum. SE17BCX38A, BCX38B, BCX38C ELECTRICAL CHARACTERISTICS (at Tamp= 25C). Parameter Symbol | Min. | Max. | Unit Test Conditions Collector-base breakdown voltage Viericeo 80 _ Vi |Ic=10nA, |p =O Collector-emitter sustaining voltage | Veeoieus) 60 - Vi |!c=10mA, Ip=0 Emitter-base breakdown voltage Vierieso 10 V |lp=10pA, Ic =0 Collector-base cut-off current lego | 100] nA | Vcg=60V, Ip=0 Emitter-base cut-off current lego _ 100 | nA | Veg = BV, Ie =0 Static forward current transfer ratio | hee BCX38A 500 | | |ig=100mA, Vc_e=5V* 1000 | | |I->=500mA, Vc_=5V* BCX38B 2000; | |Ilc=100MA, Vee = 5V* 4000] | |Ilc=500mMA, Vc, = 5V* BCX38C 5000 | | |le=100mA, Vce= 5V* 10000} | |l-=500mA, Vcg=5V* Coliector-emitter saturation voltage | VcE;sat) 41.25] Vi |I=800mA, I3=8mA* Base-emitter on voltage Vee(on) - 1.8 | V |lg=800mA, Vcg=5V* *Measured under pulsed conditions. Pulse width = 300us. Duty cycle THERMAL CHARACTERISTICS 2%. Characteristic Symbol Max. Value | Unit Thermal Resistance: Junction to Ambient Ring-amb) 175.0 C/iw Junction to Case Rinti-casel 87.5 C/W SE18BCX38A, BCX38B, BCX38C MAXIMUM POWER DISSIPATION (W) 1 2 3 4 6 10 20 300040 60 COLLECTOR-EMITTER VOLTAGE Vce_ (V) Voltage derating graph The maximum permissible operational temperature can be obtained from Fig. 1 using the equation: Power (max) Power (actual Tambimax) = ower max) Power factual) + 25C 0.0057 Tambimax) = Maximum operating ambient temperature. Power (max) = Maximum power dissipation figure, obtained from Fig. 1 for a given Vce and source resistance (Rs). Power (actual) = Actual power dissipation in users circuit. SE19BCX38A, BCX38B, BCX38C 288 8 8 THERMAL RESISTANCE (C/W) g 100, tm 10m 100m 1 PULSE WIOTH (s) Maximum transient thermal impedance curves 10 100 TEMAX 100m COLLECTOR CURRENT Ic (A) Tame = 25C SINGLE PULSE TyMAX = 200C 10m 1 10 100 COLLECTOR-EMITTER VOLTAGE Vee (V) Safe operating area at T,,,,= 25C (single pulse) SE20BCX38A, BCX38B, BCX38C BASE EMITTER SATURATION VOLTAGE Vge(saty (V) im 10m 100m 1 COLLECTOR CURRENT Ic (A) Typical base-emitter saturation voltages plotted against collector current NORMALISED STATIC FORWARD CURRENT TRANSFER RATIO im 10m 100m 1 COLLECTOR CURRENT Ic (A) Typical static forward current transfer ratio plotted against collector current SE21To Ha \ | Ay rT C1 ear eat CL ro rine peneemeuniioe 10m COLLECTOR CURRENT Ic (A Typical collector-emitter saturation voltages plotted against collector current mt tL ri Hee PoC sop | EY | CEC erin ea ee ene \ y r 19m 400mm COLLECTOR CURRENT tc (A) Typicat base-emitter turn-on voltages plotted against collector current SE22