IGP03N120H2 - Infineon Technologies

IGP03N120H2

IGW03N120H2

Power Semiconductors 1 Rev. 2.6 Febr. 08

HighSpeed 2-Technology

• Designed for:

- SMPS

- Lamp Ballast

- ZVS-Converter

- optimised for soft-switching / resonant topologies

• 2nd generation HighSpeed-Technology

for 1200V applications offers :

- loss reduction in resonant circuits

- temperature stable behavior

- parallel switching capability

- tight parameter distribution

- Eoff optimized for IC =3A

• Qualified according to JEDEC2 for target applications

• Pb-free lead plating; RoHS compliant

• Complete product spectrum and PSpice Models : http://www.infineon.com/igbt/

Type VCE I

C Eoff Tj Marking Package

IGW03N120H2 1200V 3A 0.15mJ

150°CG03H1202 PG-TO-247-3

IGP03N120H2 1200V 3A 0.15mJ 150°C G03H1202 PG-TO-220-3-1

Maximum Ratings

Parameter Symbol Value Unit

Collector-emitter voltage VCE 1200 V

Triangular collector current

TC = 25°C, f = 140kHz

TC = 100°C, f = 140kHz

9.6

3.9

Pulsed collector current, tp limited by Tjmax ICpuls 9.9

Turn off safe operating area

VCE ≤ 1200V, Tj ≤ 150°C

- 9.9

Gate-emitter voltage VGE ±20 V

Power dissipation

TC = 25°C

Ptot 62.5 W

Operating junction and storage temperature Tj , Tstg -40...+150

Soldering temperature, 1.6mm (0.063 in.) from case for 10s - 260

°C

2 J-STD-020 and JESD-022

PG-TO-247-3

PG-TO220-3-1

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IGP03N120H2

IGW03N120H2

Power Semiconductors 2 Rev. 2.6 Febr. 08

Thermal Resistance

Parameter Symbol Conditions Max. Value Unit

Characteristic

IGBT thermal resistance,

junction – case

RthJC 2.0

Thermal resistance,

junction – ambient

RthJA PG-TO-220-3-1

PG-TO-247-3

K/W

Electrical Characteristic, at Tj = 25 °C, unless otherwise specified

Value

Parameter Symbol Conditions

min. Typ. max.

Unit

Static Characteristic

Collector-emitter breakdown voltage V(BR)CES VGE=0V, IC=300μA 1200 - -

Collector-emitter saturation voltage VCE(sat) VGE = 15V, IC=3A

Tj=25°C

Tj=150°C

VGE = 10V, IC=3A,

Tj=25°C

2.2

2.5

2.4

2.8

Gate-emitter threshold voltage VGE(th) IC=90μA,VCE=VGE 2.1 3 3.9

Zero gate voltage collector current

ICES VCE=1200V,VGE=0V

Tj=25°C

Tj=150°C

μA

Gate-emitter leakage current IGES VCE=0V,VGE=20V - - 100 nA

Transconductance gfs VCE=20V, IC=3A - 2 - S

Dynamic Characteristic

Input capacitance Ciss - 205 -

Output capacitance Coss - 24 -

Reverse transfer capacitance Crss

VCE=25V,

VGE=0V,

f=1MHz - 7 -

Gate charge QGate VCC=960V, IC=3A

VGE=15V

- 22 - nC

Internal emitter inductance

measured 5mm (0.197 in.) from case

LE PG-TO-220-3-1

PG-TO-247-3

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IGP03N120H2

IGW03N120H2

Power Semiconductors 3 Rev. 2.6 Febr. 08

Switching Characteristic, Inductive Load, at Tj=25 °C

Value

Parameter Symbol Conditions

min. typ. max.

Unit

IGBT Characteristic

Turn-on delay time td(on) - 9.2 -

Rise time tr - 5.2 -

Turn-off delay time td(off) - 281 -

Fall time tf - 29 -

Turn-on energy Eon - 0.14 -

Turn-off energy Eoff - 0.15 -

Total switching energy Ets

Tj=25°C,

VCC=800V,IC=3A,

VGE=15V/0V,

RG=82Ω,

Lσ

2)=180nH,

Cσ

2)=40pF

Energy losses include

“tail” and diode 3)

reverse recovery. - 0.29 -

Switching Characteristic, Inductive Load, at Tj=150 °C

Value

Parameter Symbol Conditions

min. typ. max.

Unit

IGBT Characteristic

Turn-on delay time td(on) - 9.4 -

Rise time tr - 6.7 -

Turn-off delay time td(off) - 340 -

Fall time tf - 63 -

Turn-on energy Eon - 0.22 -

Turn-off energy Eoff - 0.26 -

Total switching energy Ets

Tj=150°C

VCC=800V,

IC=3A,

VGE=15V/0V,

RG=82Ω,

Lσ

2)=180nH,

Cσ

2)=40pF

Energy losses include

“tail” and diode 3)

reverse recovery.

- 0.48 -

Switching Energy ZVT, Inductive Load

Value

Parameter Symbol Conditions

min. typ. max.

Unit

IGBT Characteristic

Turn-off energy Eoff VCC=800V,

IC=3A,

VGE=15V/0V,

RG=82Ω,

2)=4nF

Tj=25°C

Tj=150°C

0.05

0.09

2) Leakage inductance Lσ and stray capacity Cσ due to dynamic test circuit in figure E

3) Commutation diode from device IKP03N120H2

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IGP03N120H2

IGW03N120H2

Power Semiconductors 4 Rev. 2.6 Febr. 08

IC, COLLECTOR CURRENT

10Hz 100Hz 1kHz 10kHz 100kHz

10A

12A

TC=110°C

TC=80°C

IC, COLLECTOR CURRENT

1V 10V 100V 1000V

,01A

0,1A

10A

100μs

500μs

10μs

5μs

50μs

tp=1μs

f, SWITCHING FREQUENCY VCE, COLLECTOR-EMITTER VOLTAGE

Figure 1. Collector current as a function of

switching frequency

(Tj ≤ 150°C, D = 0.5, VCE = 800V,

VGE = +15V/0V, RG = 82Ω)

Figure 2. Safe operating area

(D = 0, TC = 25°C, Tj ≤ 150°C)

Ptot, POWER DISSIPATION

25°C 50°C 75°C 100°C 125°C

10W

20W

30W

40W

50W

60W

IC, COLLECTOR CURRENT

25°C 50°C 75°C 100°C 125°C 150°C

10A

12A

TC, CASE TEMPERATURE TC, CASE TEMPERATURE

Figure 3. Power dissipation as a function

of case temperature

(Tj ≤ 150°C)

Figure 4. Collector current as a function of

case temperature

(VGE ≤ 15V, Tj ≤ 150°C)

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IGP03N120H2

IGW03N120H2

Power Semiconductors 5 Rev. 2.6 Febr. 08

IC, COLLECTOR CURRENT

0V 1V 2V 3V 4V 5V

10A

12V

10V

VGE=15V

IC, COLLECTOR CURRENT

0V 1V 2V 3V 4V 5V

10A

12V

10V

VGE=15V

VCE, COLLECTOR-EMITTER VOLTAGE VCE, COLLECTOR-EMITTER VOLTAGE

Figure 5. Typical output characteristics

(Tj = 25°C)

Figure 6. Typical output characteristics

(Tj = 150°C)

IC, COLLECTOR CURRENT

3V 5V 7V 9V

10A

12A

Tj=+150°C

Tj=+25°C

VCE(sat), COLLECTOR-EMITTER SATURATION VOLTAGE

-50°C 0°C 50°C 100°C 150°C

IC=6A

IC=3A

IC=1.5A

VGE, GATE-EMITTER VOLTAGE Tj, JUNCTION TEMPERATURE

Figure 7. Typical transfer characteristics

(VCE = 20V)

Figure 8. Typical collector-emitter

saturation voltage as a function of junction

temperature

(VGE = 15V)

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IGP03N120H2

IGW03N120H2

Power Semiconductors 6 Rev. 2.6 Febr. 08

t, SWITCHING TIMES

0A 2A 4A

1ns

10ns

100ns

1000ns

td(on)

td(off)

t, SWITCHING TIMES

0Ω50Ω100Ω150Ω

1ns

10ns

100ns

1000ns

td(on)

td(off)

IC, COLLECTOR CURRENT RG, GATE RESISTOR

Figure 9. Typical switching times as a

function of collector current

(inductive load, Tj = 150°C,

VCE = 800V, VGE = +15V/0V, RG = 82Ω,

dynamic test circuit in Fig.E)

Figure 10. Typical switching times as a

function of gate resistor

(inductive load, Tj = 150°C,

VCE = 800V, VGE = +15V/0V, IC = 3A,

dynamic test circuit in Fig.E)

t, SWITCHING TIMES

25°C 50°C 75°C 100°C 125°C 150°C

1ns

10ns

100ns

1000ns

td(on)

td(off)

VGE(th), GATE-EMITTER THRESHOLD VOLTAGE

-50°C 0°C 50°C 100°C 150°C

typ.

min.

max.

Tj, JUNCTION TEMPERATURE Tj, JUNCTION TEMPERATURE

Figure 11. Typical switching times as a

function of junction temperature

(inductive load, VCE = 800V,

VGE = +15V/0V, IC = 3A, RG = 82Ω,

dynamic test circuit in Fig.E)

Figure 12. Gate-emitter threshold voltage

as a function of junction temperature

(IC = 0.09mA)

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IGP03N120H2

IGW03N120H2

Power Semiconductors 7 Rev. 2.6 Febr. 08

E, SWITCHING ENERGY LOSSES

0A 2A 4A

0.0mJ

0.5mJ

1.0mJ

Eon

Eoff

Ets

E, SWITCHING ENERGY LOSSES

0Ω50Ω100Ω150Ω200Ω250Ω

0.2mJ

0.3mJ

0.4mJ

0.5mJ

0.6mJ

0.7mJ

Eon

Ets

Eoff

IC, COLLECTOR CURRENT RG, GATE RESISTOR

Figure 13. Typical switching energy losses

as a function of collector current

(inductive load, Tj = 150°C,

VCE = 800V, VGE = +15V/0V, RG = 82Ω,

dynamic test circuit in Fig.E )

Figure 14. Typical switching energy losses

as a function of gate resistor

(inductive load, Tj = 150°C,

VCE = 800V, VGE = +15V/0V, IC = 3A,

dynamic test circuit in Fig.E )

E, SWITCHING ENERGY LOSSES

25°C 80°C 125°C 150°C

0.1mJ

0.2mJ

0.3mJ

0.4mJ

0.5mJ

Ets

Eon

Eoff

Eoff, TURN OFF SWITCHING ENERGY LOSS

0V/us 1000V/us 2000V/us 3000V/us

0.00mJ

0.04mJ

0.08mJ

0.12mJ

0.16mJ

IC=1A, TJ=150°C

IC=1A, TJ=25°C

IC=3A, TJ=150°C

IC=3A, TJ=25°C

Tj, JUNCTION TEMPERATURE dv/dt, VOLTAGE SLOPE

Figure 15. Typical switching energy losses

as a function of junction temperature

(inductive load, VCE = 800V,

VGE = +15V/0V, IC = 3A, RG = 82Ω,

dynamic test circuit in Fig.E )

Figure 16. Typical turn off switching energy

loss for soft switching

(dynamic test circuit in Fig. E)

) Eon and Ets include losses

due to diode recovery.

) Eon and Ets include losses

due to diode recovery.

) Eon and Ets include losses

due to diode recovery.

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IGP03N120H2

IGW03N120H2

Power Semiconductors 8 Rev. 2.6 Febr. 08

ZthJC, TRANSIENT THERMAL RESISTANCE

1µs 10µs 100µs 1ms 10ms 100ms

10-2K/W

10-1K/W

100K/W

0.01

0.02

0.05

0.1

0.2

single pulse

D=0.5

VGE, GATE-EMITTER VOLTAGE

0nC 10nC 20nC 30nC

10V

15V

20V

UCE=240V

UCE=960V

QGE, GATE CHARGE QGE, GATE CHARGE

Figure 16. IGBT transient thermal resistan ce

(D = tp / T)

Figure 17. Typical gate charge

(IC = 3A)

C, CAPACITANCE

0V 10V 20V 30V

10pF

100pF

1nF

Crss

Coss

Ciss

VCE, COLLECTOR-EMITTER VOLTAGE

0.0 0.2 0.4 0.6 0.8 1.0 1.2

200V

400V

600V

800V

1000V

ICE COLLECTOR CURRENT

VCE, COLLECTOR-EMITTER VOLTAGE tp, PULSE WIDTH

Figure 18. Typical capacitance as a

function of collector-emitter v oltage

(VGE = 0V, f = 1MHz)

Figure 20. Typical turn off behavior, hard

switching

(VGE=15/0V, RG=82Ω, Tj = 150°C,

Dynamic test circuit in Figure E)

R,(K/W)

, (s)

1.082517 0.000795

0.328671 0.000179

0.588811 0.004631

C1=

1/R1

R1R2

C2=

2/R2

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IGP03N120H2

IGW03N120H2

Power Semiconductors 9 Rev. 2.6 Febr. 08

VGE, GATE-EMITTER VOLTAGE

0.0 0.4 0.8 1.2 1.6 2.0 2.4 2.8

200V

400V

600V

800V

ICE COLLECTOR CURRENT

tp, PULSE WIDTH

Figure 21. Typical turn off behavior, soft

switching

(VGE=15/0V, RG=82Ω, Tj = 150°C,

Dynamic test circuit in Figure E)

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IGP03N120H2

IGW03N120H2

Power Semiconductors 10 Rev. 2.6 Febr. 08

PG-TO247-3

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IGP03N120H2

IGW03N120H2

Power Semiconductors 11 Rev. 2.6 Febr. 08

PG-TO220-3-1

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IGP03N120H2

IGW03N120H2

Power Semiconductors 12 Rev. 2.6 Febr. 08

Figure A. Definition of switching times

rrm

90% I

rrm

10% I

rrm

di /dt

Q=Q Q

rr S F

t=t t

rr S F

Figure C. Definition of diodes

switching characteristics

p(t)

12 n

T(t)

Figure D. Thermal equivalent

circuit

Figure E. Dynamic test circuit

Leakage inductance Lσ

= 180nH,

Stray capacitor Cσ = 40pF,

Relief capacitor Cr = 4nF (only for

ZVT switching)

Figure B. Definition of switching losses

öö

VDC

DUT

(Diode)

½Lσ

RGDUT

(IGBT)

½Lσ

CσCr

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IGP03N120H2

IGW03N120H2

Power Semiconductors 13 Rev. 2.6 Febr. 08

Edition 2006-01

Published by

Infineon Technologies AG

81726 München, Germany

Attention please!

The information given in this data sheet shall in no event be regarded as a guarantee of conditions or

characteristics (“Beschaffenheitsgarantie”). With respect to any examples or hints given herein, any typical

values stated herein and/or any information regarding the application of the device, Infineon Technologies

hereby disclaims any and all warranties and liabilities of any kind, including without limitation warranties of

non-infringement of intellectual property rights of any third party.

Information

For further information on technology, delivery terms and conditions and prices please contact your nearest

Infineon Technologies Office (www.infineon.com).

Warnings

Due to technical requirements components may contain dangerous substances. For information on the types

in question please contact your nearest Infineon Technologies Office.

Infineon Technologies Components may only be used in life-support devices or systems with the express

written approval of Infineon Technologies, if a failure of such components can reasonably be expected to

cause the failure of that life-support device or system, or to affect the safety or effectiveness of that device or

system. Life support devices or systems are intended to be implanted in the human body, or to support

and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health

of the user or other persons may be endangered.

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