PD - 91309C IRF3710 HEXFET(R) Power MOSFET l l l l l l Advanced Process Technology Ultra Low On-Resistance Dynamic dv/dt Rating 175C Operating Temperature Fast Switching Fully Avalanche Rated D VDSS = 100V RDS(on) = 23m G ID = 57A S Description Advanced HEXFET(R) Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications. The TO-220 package is universally preferred for all commercial-industrial applications at power dissipation levels to approximately 50 watts. The low thermal resistance and low package cost of the TO-220 contribute to its wide acceptance throughout the industry. TO-220AB Absolute Maximum Ratings Parameter ID @ TC = 25C ID @ TC = 100C IDM PD @TC = 25C VGS IAR EAR dv/dt TJ TSTG Max. Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V Pulsed Drain Current Power Dissipation Linear Derating Factor Gate-to-Source Voltage Avalanche Current Repetitive Avalanche Energy Peak Diode Recovery dv/dt Operating Junction and Storage Temperature Range Soldering Temperature, for 10 seconds Mounting torque, 6-32 or M3 srew Units 57 40 230 200 1.3 20 28 20 5.8 -55 to + 175 A W W/C V A mJ V/ns C 300 (1.6mm from case ) 10 lbf*in (1.1N*m) Thermal Resistance Parameter RJC RCS RJA Junction-to-Case Case-to-Sink, Flat, Greased Surface Junction-to-Ambient www.irf.com Typ. Max. Units --- 0.50 --- 0.75 --- 62 C/W 1 09/15/09 http://store.iiic.cc/ IRF3710 Electrical Characteristics @ TJ = 25C (unless otherwise specified) RDS(on) VGS(th) gfs Parameter Drain-to-Source Breakdown Voltage Breakdown Voltage Temp. Coefficient Static Drain-to-Source On-Resistance Gate Threshold Voltage Forward Transconductance Qg Qgs Qgd td(on) tr td(off) tf Gate-to-Source Forward Leakage Gate-to-Source Reverse Leakage Total Gate Charge Gate-to-Source Charge Gate-to-Drain ("Miller") Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Min. 100 --- --- 2.0 32 --- --- --- --- --- --- --- --- --- --- --- Typ. --- 0.13 --- --- --- --- --- --- --- --- --- --- 12 58 45 47 IDSS Drain-to-Source Leakage Current LD Internal Drain Inductance --- 4.5 LS Internal Source Inductance --- 7.5 Ciss Coss Crss EAS Input Capacitance Output Capacitance Reverse Transfer Capacitance Single Pulse Avalanche Energy --- 3130 --- 410 --- 72 --- 1060 V(BR)DSS V(BR)DSS/TJ IGSS Max. Units Conditions --- V VGS = 0V, ID = 250A --- V/C Reference to 25C, ID = 1mA 23 m VGS = 10V, ID =28A 4.0 V VDS = VGS, ID = 250A --- S VDS = 25V, ID = 28A 25 VDS = 100V, VGS = 0V A 250 VDS = 80V, VGS = 0V, TJ = 150C 100 VGS = 20V nA -100 VGS = -20V 130 ID = 28A 26 nC VDS = 80V 43 VGS = 10V, See Fig. 6 and 13 --- VDD = 50V --- ID = 28A ns --- RG = 2.5 --- VGS = 10V, See Fig. 10 Between lead, --- 6mm (0.25in.) nH G from package --- and center of die contact --- VGS = 0V --- VDS = 25V --- pF = 1.0MHz, See Fig. 5 280 mJ IAS = 28A, L = 0.70mH D S Source-Drain Ratings and Characteristics IS ISM VSD trr Qrr ton Parameter Continuous Source Current (Body Diode) Pulsed Source Current (Body Diode) Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge Forward Turn-On Time Min. Typ. Max. Units Conditions D MOSFET symbol 57 --- --- showing the A G integral reverse --- --- 230 S p-n junction diode. --- --- 1.2 V TJ = 25C, IS = 28A, VGS = 0V --- 140 220 ns TJ = 25C, IF = 28A --- 670 1010 nC di/dt = 100A/s Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD) Notes: Repetitive rating; pulse width limited by ISD 28A, di/dt 380A/s, VDD V(BR)DSS, Starting TJ = 25C, L = 0.70mH Pulse width 400s; duty cycle 2%. max. junction temperature. (See fig. 11) RG = 25, IAS = 28A, VGS=10V (See Figure 12) TJ 175C This is a typical value at device destruction and represents operation outside rated limits. This is a calculated value limited to TJ = 175C . 2 www.irf.com http://store.iiic.cc/ IRF3710 1000 1000 VGS 16V 10V 7.0V 6.0V 5.0V 4.5V 4.0V BOTTOM 3.5V VGS 16V 10V 7.0V 6.0V 5.0V 4.5V 4.0V BOTTOM 3.5V 100 TOP 10 3.5V 1 20s PULSE WIDTH Tj = 25C ID, Drain-to-Source Current (A) ID, Drain-to-Source Current (A) TOP 100 0.1 10 3.5V 1 20s PULSE WIDTH Tj = 175C 0.1 0.1 1 10 100 0.1 1 VDS, Drain-to-Source Voltage (V) Fig 1. Typical Output Characteristics 100 Fig 2. Typical Output Characteristics 1000.00 3.0 I D = 57A 2.5 R DS(on) , Drain-to-Source On Resistance 100.00 T J = 175C 10.00 T J = 25C 1.00 VDS = 15V 50V 20s PULSE WIDTH 0.10 3.0 4.0 5.0 6.0 7.0 8.0 2.0 (Normalized) ID, Drain-to-Source Current ( ) 10 VDS, Drain-to-Source Voltage (V) 1.5 1.0 0.5 V GS = 10V 0.0 9.0 VGS, Gate-to-Source Voltage (V) Fig 3. Typical Transfer Characteristics www.irf.com -60 -40 -20 0 20 40 60 80 TJ , Junction Temperature 100 120 140 160 180 ( C) Fig 4. Normalized On-Resistance Vs. Temperature 3 http://store.iiic.cc/ IRF3710 VGS = 0V, f = 1 MHZ Ciss = Cgs + Cgd, Cds SHORTED Crss = Cgd Coss = Cds + Cgd C, Capacitance(pF) 10000 Ciss 1000 Coss Crss 100 12.0 ID= 28A VGS, Gate-to-Source Voltage (V) 100000 10.0 VDS= 80V VDS= 50V VDS= 20V 8.0 6.0 4.0 2.0 0.0 10 1 10 0 100 40 60 80 100 QG Total Gate Charge (nC) VDS, Drain-to-Source Voltage (V) Fig 6. Typical Gate Charge Vs. Gate-to-Source Voltage Fig 5. Typical Capacitance Vs. Drain-to-Source Voltage 1000 ID, Drain-to-Source Current (A) 1000.00 ISD, Reverse Drain Current (A) 20 100.00 OPERATION IN THIS AREA LIMITED BY R DS(on) 100 TJ = 175C 10.00 T J = 25C 1.00 100sec 10 1msec 10msec 1 Tc = 25C Tj = 175C Single Pulse VGS = 0V 0.10 0.1 0.0 0.5 1.0 1.5 2.0 1 VSD, Source-toDrain Voltage (V) Fig 7. Typical Source-Drain Diode Forward Voltage 10 100 1000 VDS , Drain-toSource Voltage (V) Fig 8. Maximum Safe Operating Area 4 www.irf.com http://store.iiic.cc/ IRF3710 60 RD VDS VGS 50 D.U.T. RG + -VDD I D , Drain Current (A) 40 V GS 30 Pulse Width 1 s Duty Factor 0.1 % 20 Fig 10a. Switching Time Test Circuit VDS 10 90% 0 25 50 75 100 TC , Case Temperature 125 150 175 ( C) 10% VGS Fig 9. Maximum Drain Current Vs. Case Temperature td(on) tr t d(off) tf Fig 10b. Switching Time Waveforms 1 (Z thJC) D = 0.50 Thermal Response 0.20 0.1 0.10 P DM 0.05 0.02 SINGLE PULSE (THERMAL RESPONSE) t1 t2 0.01 Notes: 1. Duty factor D = 2. Peak T 0.01 0.00001 0.0001 0.001 0.01 t1/ t 2 J = P DM x Z thJC +TC 0.1 1 t 1, Rectangular Pulse Duration (sec) Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case www.irf.com 5 http://store.iiic.cc/ IRF3710 550 ID 15V TOP D.U.T RG 20V VGS IAS 440 DRIVER + V - DD A 0.01 tp Fig 12a. Unclamped Inductive Test Circuit V(BR)DSS tp EAS , Single Pulse Avalanche Energy (mJ) L VDS 11A 20A 28A BOTTOM 330 220 110 0 25 50 75 100 125 150 175 ( C) Starting T , Junction Temperature J Fig 12c. Maximum Avalanche Energy Vs. Drain Current I AS Fig 12b. Unclamped Inductive Waveforms Current Regulator Same Type as D.U.T. 50K 12V QG .2F .3F VGS QGS D.U.T. QGD + V - DS VGS VG 3mA IG Charge ID Current Sampling Resistors Fig 13a. Basic Gate Charge Waveform 6 Fig 13b. Gate Charge Test Circuit www.irf.com http://store.iiic.cc/ IRF3710 Peak Diode Recovery dv/dt Test Circuit + D.U.T* Circuit Layout Considerations * Low Stray Inductance * Ground Plane * Low Leakage Inductance Current Transformer + - - + RG * dv/dt controlled by RG * ISD controlled by Duty Factor "D" * D.U.T. - Device Under Test VGS * + - VDD Reverse Polarity of D.U.T for P-Channel Driver Gate Drive P.W. Period D= P.W. Period [VGS=10V ] *** D.U.T. ISD Waveform Reverse Recovery Current Body Diode Forward Current di/dt D.U.T. VDS Waveform Diode Recovery dv/dt Re-Applied Voltage Body Diode [VDD] Forward Drop Inductor Curent Ripple 5% [ISD ] *** VGS = 5.0V for Logic Level and 3V Drive Devices Fig 14. For N-channel HEXFET(R) power MOSFETs www.irf.com 7 http://store.iiic.cc/ IRF3710 TO-220AB Package Outline Dimensions are shown in millimeters (inches) TO-220AB Part Marking Information (;$03/( 7+,6,6$ 1,5) /27&2'( $66(0%/('21:: ,1 7+ ($66(0%/</,1(& Note: "P" in assembly line position indicates "Lead-Free" ,17(51 $7,21$/ 5(&7,),(5 /2*2 $66(0%/< /27&2'( 3$5718 0%(5 '$7(&2'( <($5 :((. /,1(& Note: For the most current drawing please refer to IR website at http://www.irf.com/package/ Data and specifications subject to change without notice. This product has been designed and qualified for the Automotive [Q101] market. Qualification Standards can be found on IR's Web site. IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105 TAC Fax: (310) 252-7903 Visit us at www.irf.com for sales contact information.09/2009 8 www.irf.com http://store.iiic.cc/