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ESD8V0R1B...
Bi-directional Low Capacitance TVS Diode
ESD / transient protection of high-speed
data lines in 3.3 / 5 / 12 V applications
according to:
IEC61000-4-2 (ESD): ±18 kV (air) ±15 kV (contact
)
IEC61000-4-4 (EFT): 40 A (5 / 50 ns)
Extremely small form factor down to
0.62 x 0.32 x 0.31 mm³ (0201)
Max. working voltage: 8 / +14 V
Very low reverse current < 1 nA typ.
Very low series inductance down to 0.2 nH typ.
Low capacitance of 4 pF typ.
Pb-free (RoHS compliant) package
Qualified according AEC Q101
Applications
USB 2.0, 10/100 Ethernet, Firewire, DVI
Mobile communication
Consumer products (STB, MP3, DVD, DSC...)
LCD displays, camera
Notebooks and destop computers, peripherals
ESD8V0R1B-02LS
ESD8V0R1B-02LRH
21
Type Package Configuration Marking
ESD8V0R1B-02LRH
ESD8V0R1B-02LS
TSLP-2-17
TSSLP-2-1
1 line, bi-directional
1 line, bi-directional
E
E
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ESD8V0R1B...
Maximum Ratings at T
A
= 25°C, unless otherwise specified
Parameter Symbol Value Unit
ESD discharge1)
air
contact
VESD
18
15
kV
Peak pulse current (t
p
= 8 / 20 µs)2) I
pp
1 A
Operating temperature range To
p
-55...150 °C
Storage temperature Tst
g
-65...150
Electrical Characteristics at T
A
= 25°C, unless otherwise specified
Parameter Symbol Values Unit
min. typ. max.
Characteristics
Reverse working voltage, from pin 2 to 1 VRWM -8 - 14 V
Breakdown voltage
I(BR) = 1 mA, from pin 2 to 1
I(BR) = 1 mA, from pin 1 to 2
V(BR)
14.5
8.5
17
11
20
14
Reverse current
VR = 3.3 V
IR- <1 50 nA
Clamping voltage
IPP = 1 A, tP = 8/20 µs, from pin 2 to 12)
IPP = 1 A, tP = 8/20 µs, from pin1 to 22)
VCL
-
-
23
17
28
22
V
Line capacitance
VR = 0 V, f = 1 MHz
CT- 4 7 pF
Series inductance
ESD8V0R1B-02LS
ESD8V0R1B-02LRH
LS
-
-
0.2
0.4
-
-
nH
1VESD according to IEC61000-4-2
2Ipp according to IEC61000-4-5
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ESD8V0R1B...
Power derating curve Ppk = ƒ (TA)
0 25 50 75 100 °C 150
TA
0
10
20
30
40
50
60
70
80
90
%
110
Ppk or Ipp
Non-repetitive peak pulse power
Ppk = ƒ (tp)
10 -8 10 -7 10 -6 10 -5 10 -4 10 -3 10 -2 10 0
s
tp
0
10
1
10
2
10
3
10
W
Ppk
D= 0
D= .005
D= .01
D= .02
D= .05
D= .1
D= .2
D= .5
Reverse current IR = ƒ(VR)
TA = Parameter
0 2 4 6 8 10 V14
VR
-2
10
-1
10
0
10
1
10
nA
IR
TA = 25°C
TA = 85°C
Diode capacitance CT = ƒ (VR)
f = 1MHz
0 2 4 6 8 10 12 V15
VR
0
1
2
3
4
5
pF
7
CT
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ESD8V0R1B...
Application example ESD8V0R1B...
1 line, bi-directional
ESD
sensitive
device
I/O
2
1
Connector
Protected data line with signal levels
-8V up to +14V (bi-directional)
The protection diode should be placed
very close to the location where the ESD
or other transients can occur to keep
loops and inductances as small as
possible.
Pin 1 should be connected directly to a
ground plane on the board .
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ESD8V0R1B...
TSLP-2-17 (mm)
1
2
±0.05
0.6
1
2
±0.05
0.65
±0.035
0.25 1)
1±0.05
0.05 MAX.
+0.01
0.39-0.03
1) Dimension applies to plated terminal
Cathode
marking
1)
±0.035
0.5
Bottom viewTop view
Package Outline
Foot Print
Marking Layout (Example)
Standard Packing
Reel ø180 mm = 15.000 Pieces/Reel
Reel ø330 mm = 50.000 Pieces/Reel (optional)
For board assembly information please refer to Infineon website "Packages"
0.45
0.275
0.275
0.375
0.925
Copper Solder mask Stencil apertures
0.35
1
0.6
0.35
0.3
0.76
4
1.16
0.5
Cathode
marking
8
BAR90-02LRH
Type code
Cathode marking
Laser marking
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ESD8V0R1B...
TSSLP-2-1 (mm)
2009-12-18
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ESD8V0R1B...
Edition 2009-11-16
Published by
Infineon Technologies AG
81726 Munich, Germany
2009 Infineon Technologies AG
All Rights Reserved.
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of conditions or characteristics. With respect to any examples or hints given herein,
any typical values stated herein and/or any information regarding the application of
the device, Infineon Technologies hereby disclaims any and all warranties and
liabilities of any kind, including without limitation, warranties of non-infringement of
intellectual property rights of any third party.
Information
For further information on technology, delivery terms and conditions and prices,
please contact the nearest Infineon Technologies Office ( <www.infineon.com>).
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Due to technical requirements, components may contain dangerous substances.
For information on the types in question, please contact the nearest Infineon
Technologies Office.
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Life support devices or systems are intended to be implanted in the human body or
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