TN6717A NZT6717 C E C C B TO-226 SOT-223 BE NPN General Purpose Amplifier This device is designed for general purpose medium power amplifiers and switches requiring collector currents to 1.0 A. Sourced from Process 39. Absolute Maximum Ratings* Symbol TA = 25C unless otherwise noted Parameter Value Units V VCEO Collector-Emitter Voltage 80 VCBO Collector-Base Voltage 80 V VEBO Emitter-Base Voltage 5.0 V IC Collector Current - Continuous 1.2 A -55 to +150 C TJ, Tstg Operating and Storage Junction Temperature Range *These ratings are limiting values above which the serviceability of any semiconductor device may be impaired. NOTES: 1) These ratings are based on a maximum junction temperature of 150 degrees C. 2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations. Thermal Characteristics Symbol PD TA = 25C unless otherwise noted Characteristic RJC Total Device Dissipation Derate above 25C Thermal Resistance, Junction to Case RJA Thermal Resistance, Junction to Ambient Max TN6717A 1.0 8.0 50 *NZT6717 1.0 8.0 125 125 *Device mounted on FR-4 PCB 36 mm X 18 mm X 1.5 mm; mounting pad for the collector lead min. 6 cm2. 1997 Fairchild Semiconductor Corporation Units W mW/C C/W C/W TN6717A / NZT6717 Discrete POWER & Signal Technologies (continued) Electrical Characteristics Symbol TA = 25C unless otherwise noted Parameter Test Conditions Min Max Units OFF CHARACTERISTICS V(BR)CEO Collector-Emitter Breakdown Voltage* I C = 1.0 mA, IB = 0 80 V V(BR)CBO Collector-Base Breakdown Voltage I C = 100 A, I E = 0 80 V V(BR)EBO Emitter-Base Breakdown Voltage I E = 100 A, IC = 0 5.0 V ICBO Collector-Cutoff Current VCB = 60 V, IE = 0 0.1 A IEBO Emitter-Cutoff Current VEB = 5.0 V, IC = 0 0.1 A ON CHARACTERISTICS* hFE DC Current Gain VCE(sat ) Collector-Emitter Saturation Voltage I C = 50 mA, VCE = 1.0 V I C = 250 mA, VCE = 1.0 V I C = 250 mA, IB = 100 mA VBE( on) Base-Emitter On Voltage I C = 250 mA, VCE = 1.0 V 80 50 250 0.5 V 1.2 V SMALL SIGNAL CHARACTERISTICS hfe Small-Signal Current Gain Ccb Collector-Base Capacitance I C = 200 mA, VCE = 5.0 V, f = 20 MHz VCB = 10 V, IE = 0, f = 1.0 MHz 2.5 25 30 pF *Pulse Test: Pulse Width 300 s, Duty Cycle 1.0% Typical Pulsed Current Gain vs Collector Current 300 250 V CE = 5V 125 C 200 25 C 150 100 - 40 C 50 0 0.001 0.01 0.1 I C - COLLECTOR CURRENT (A) 1 1.5 VCESAT- COLLECTOR-EMITTER VOLTAGE (V) h FE - TYPICAL PULSED CURRENT GAIN Typical Characteristics Collector-Emitter Saturation Voltage vs Collector Current 0.5 0.4 = 10 0.3 25 C 0.2 125 C 0.1 - 40 C 0 0.01 0.1 I C - COLLECTOR CURRENT (A) P 39 1 TN6717A / NZT6717 NPN General Purpose Amplifier (continued) Base-Emitter Saturation Voltage vs Collector Current = 10 1.2 1 0.8 - 40 C 25 C 0.6 125 C 0.4 0.2 1 10 100 I C - COLLECTOR CURRENT (mA) 1000 VCESAT- COLLECTOR-EMITTER VOLTAGE (V) 0.5 = 10 0.3 25 C 0.2 125 C 0.1 - 40 C 0 0.01 0.1 I C - COLLECTOR CURRENT (A) 1 Gain Bandwidth Product vs Collector Current V CE = 10V 400 300 200 100 10 100 I C - COLLECTOR CURRENT (mA) 0.8 - 40 C 25 C 0.6 125 C 0.4 V CE = 5V 0.2 0.001 I 0.01 0.1 - COLLECTOR CURRENT (A) C 1 Collector-Base Capacitance vs Collector-Base Voltage 40 f = 1 MHz 30 20 10 0 0 4 8 12 16 20 24 28 V CB- COLLECTOR-BASE VOLTAGE (V) Pr39 Safe Operating Area TO-226 500 1 1 10 I C - COLLECTOR CURRENT (A) f T - GAIN BANDWIDTH PRODUCT (MHz) P 39 0 Base-Emitter ON Voltage vs Collector Current P 39 Collector-Emitter Saturation Voltage vs Collector Current 0.4 VBE(ON)- BASE-EMITTER ON VOLTAGE (V) (continued) C OBO - COLLECTOR-BASE CAPACITANCE (pF) VBESAT- BASE-EMITTER VOLTAGE (V) Typical Characteristics 1000 10 DC 1 T DC *PULSED OPERATION T A = 25 C 0.1 100 S* S* CO 1.0 LLE CTO ms RL * EA AM D = BIE 25 NT C = T 25 C LIMIT DETERMINED BY BV CEO 0.01 1 10 V CE - COLLECTOR-EMITTER VOLTAGE (V) 100 TN6717A / NZT6717 NPN General Purpose Amplifier (continued) Typical Characteristics (continued) Power Dissipation vs Ambient Temperature PD - POWER DISSIPATION (W) 1 0.75 TO-226 SOT-223 0.5 0.25 0 0 25 50 75 100 TEMPERATURE (o C) 125 150 TN6717A / NZT6717 NPN General Purpose Amplifier