2N4856JAN/JANTX/JANTXV Series
Siliconix
P-37515—Rev. B, 04-Jul-94 1
N-Channel JFETs
2N4856JAN 2N4856JANTX 2N4856JANTXV
2N4857JAN 2N4857JANTX 2N4857JANTXV
2N4858JAN 2N4858JANTX 2N4858JANTXV
2N4859JAN 2N4859JANTX 2N4859JANTXV
2N4860JAN 2N4860JANTX 2N4860JANTXV
2N4861JAN 2N4861JANTX 2N4861JANTXV
Product Summary
Part Number VGS(off) (V) V(BR)GSS Min (V) rDS(on) Max () ID(off) Max (pA) tON Typ (ns)
2N4856 –4 to –10 –40 25 250 9
2N4857 –2 to –6 –40 40 250 10
2N4858 –0.8 to –4 –40 60 250 20
2N4859 –4 to –10 –30 25 250 9
2N4860 –2 to –6 –30 40 250 10
2N4861 –0.8 to –4 –30 60 250 20
Features Benefits Applications
Low On-Resistance: 2N4856 <25
Fast Switching—tON: 4 ns
High Off-Isolation—ID(off): 5 pA
Low Capacitance: 3 pF
Low Insertion Loss
N-Channel Majority Carrier FET
Low Error Voltage
High-Speed Analog Circuit Performance
Negligible “Off-Error,” Excellent Accuracy
Good Frequency Response, Low Glitches
Eliminates Additional Buffering
High Radiation Tolerance
Analog Switches
Choppers
Sample-and-Hold
Normally “On” Switches
Current Limiters
Description
The 2N4856JAN/JANTX/JANTXV all-purpose JFET
analog switches offer low on-resistance, low capacitance,
good isolation, and fast switching.
Hermetically-sealed TO-206AA (TO-18) packaging allows
full military processing (see Military Information). For similar
products in TO-226AA (TO-92) and TO-236 (SOT-23)
packages, see the J/SST1 11 series data sheet. For similar duals,
see the 2N5564/5565/5566 data sheet.
D
S
G and Case
TO-206AA
(TO-18)
Top View
1
23
Updates to this data sheet may be obtained via facsimile by calling Siliconix FaxBack, 1-408-970-5600. Please request FaxBack document #70244.
2N4856JAN/JANTX/JANTXV Series
2 Siliconix
P-37515—Rev. B, 04-Jul-94
Absolute Maximum Ratings
Gate-Drain, Gate-Source Voltage :
(2N4856-58) –40 V. . . . . . . . . . . . . . . . . .
(2N4859-61) –30 V. . . . . . . . . . . . . . . . . .
Gate Current 50 mA. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Lead Temperature (1/16” from case for 10 seconds) 300 _C. . . . . . . . . .
Storage Temperature –65 to 200_C. . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Operating Junction Temperature –65 to 200_C. . . . . . . . . . . . . . . . . . . .
Power Dissipationa1800 mW. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Notes
a. Derate 10.3 mW/_C to TC > 25_C
Specificationsa for 2N4856, 2N4857 and 2N4858
Limits
2N4856 2N4857 2N4858
Parameter Symbol Test Conditions TypbMin Max Min Max Min Max Unit
Static
Gate-Source
Breakdown Voltage V(BR)GSS IG = –1 mA , VDS = 0 V –55 –40 –40 –40 V
Gate-Source Cutoff Voltage VGS(off) VDS = 15 V, ID = 0.5 nA –4 –10 –2 –6 –0.8 –4
Saturation Drain CurrentcIDSS VDS = 15 V, VGS = 0 V 50 175 20 100 8 80 mA
Gate Reverse Current
IGSS
VGS = –20 V, VDS = 0 V –5 –250 –250 –250 pA
Gate
Reverse
Current
I
GSS TA = 150_C –13 –500 –500 –500 nA
Gate Operating CurrentdIGVDG = 15 V, ID = 10 mA –5
pA
Drain Cutoff Current
ID( ff)
VDS = 15 V, VGS = –10 V 5 250 250 250
pA
Drain
Cutoff
Current
I
D(off) TA = 150_C 13 500 500 500 nA
ID = 5 mA 0.25 0.5
Drain-Source On-Voltage VDS(on) VGS = 0 V ID = 10 mA 0.35 0.5 V
ID = 20 mA 0.5 0.75
Drain-Source On-ResistancedrDS(on) VGS = 0 V, ID = 1 mA 25 40 60 W
Gate-Source
Forward VoltagedVGS(F) IG = 1 mA , VDS = 0 V 0.7 V
Dynamic
Common-Source
Forward Transconductancedgfs VDG = 20 V, ID = 1 mA 6 mS
Common-Source
Output Conductancedgos
G
f = 1 kHz 25 mS
Common-Source
Input Capacitance Ciss VDS = 0 V, VGS = –10 V 7 18 18 18
pF
Common-Source
Reverse Transfer Capacitance Crss
SGS
f = 1 MHz 3 8 8 8
pF
Equivalent Input
Noise VoltagedenVDG = 10 V, ID = 10 mA
f = 1 kHz 3nV⁄
√Hz
Switching
Turn On Time
td(on)
V 10 V V 0V
2 6 6 10
Turn
-
On
Time
tr
V
DD =
10
V
,
V
GS(H) =
0
V
See Switching Circuit 2 3 4 10 ns
Turn-Off Time tOFF
g
13 25 50 100
2N4856JAN/JANTX/JANTXV Series
Siliconix
P-37515—Rev. B, 04-Jul-94 3
Specificationsa for 2N4859, 2N4860 and 2N4861
Limits
2N4859 2N4860 2N4861
Parameter Symbol Test Conditions TypbMin Max Min Max Min Max Unit
Static
Gate-Source
Breakdown Voltage V(BR)GSS IG = –1 mA , VDS = 0 V –55 –30 –30 –30 V
Gate-Source Cutoff Voltage VGS(off) VDS = 15 V, ID = 0.5 nA –4 –10 –2 –6 –0.8 –4
Saturation Drain CurrentcIDSS VDS = 15 V, VGS = 0 V 50 175 20 100 8 80 mA
Gate Reverse Current
IGSS
VGS = –15 V, VDS = 0 V –5 –250 –250 –250 pA
Gate
Reverse
Current
I
GSS TA = 150_C –13 –500 –500 –500 nA
Gate Operating CurrentdIGVDG = 15 V, ID = 10 mA –5
pA
Drain Cutoff Current
ID( ff)
VDS = 15 V, VGS = –10 V 5 250 250 250
pA
Drain
Cutoff
Current
I
D(off) TA = 150_C 13 500 500 500 nA
ID = 5 mA 0.25 0.5
Drain-Source On-Voltage VDS(on) VGS = 0 V ID = 10 mA 0.35 0.5 V
ID = 20 mA 0.5 0.75
Drain-Source On-Resistance rDS(on) VGS = 0 V, ID = 1 mA 25 40 60 W
Gate-Source Forward Voltage VGS(F) IG = 1 mA , VDS = 0 V 0.7 V
Dynamic
Common-Source
Forward Transconductancedgfs VDG = 20 V, ID = 1 mA 6 mS
Common-Source
Output Conductancedgos
G
f = 1 kHz 25 mS
Common-Source
Input Capacitance Ciss VDS = 0 V, VGS = –10 V 7 18 18 18
pF
Common-Source
Reverse Transfer Capacitance Crss
SGS
f = 1 MHz 3 8 8 8
pF
Equivalent Input
Noise VoltagedenVDG = 10 V, ID = 10 mA
f = 1 kHz 3nV⁄
√Hz
Switching
Turn On Time
td(on)
V 10 V V 0V
2 6 6 10
Turn
-
On
Time
tr
V
DD =
10
V
,
V
GS(H) =
0
V
See Switching Circuit 2 3 4 10 ns
Turn-Off Time tOFF
g
19 25 50 100
Notes
a. TA = 25_C unless otherwise noted. NCB
b. Typical values are for DESIGN AID ONLY, not guaranteed nor subject to production testing.
c. Pulse test: PW 100 ms duty cycle 10%.
d. This parameter not registered with JEDEC.
51
51
1 k
VIN
Scope
VDD
RL
OUT
tOFF
tr <20 ns
tf <20 ns
tr
%"!
VGS(H)
VGS(L)
2N4856JAN/JANTX/JANTXV Series
4 Siliconix
P-37515—Rev. B, 04-Jul-94
Switching Time Test Circuit
4856/4859 4857/4860 4858/4861
VGS(L) –10 V –6 V –4 V
RL* 464 953 1910
ID(on) 20 mA 10 mA 5 mA
*Non-inductive
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