SRAM AS8S512K32 & AS8S512K32A Austin Semiconductor, Inc. 512K x 32 SRAM PIN ASSIGNMENT (Top View) SRAM MEMORY ARRAY AVAILABLE AS MILITARY SPECIFICATIONS NC A0 A1 A2 A3 A4 A5 CS3\ GND CS4\ WE1\ A6 A7 A8 A9 A10 Vcc MARKINGS XT IT * Timing 17ns 20ns 25ns 35ns 45ns 55ns -17 -20 -25 -35 -45 -55 * Package Ceramic Quad Flatpack Pin Grid Array Q P * Low Power Data Retention Mode L * Pinout Military Commercial I/O 16 I/O 17 I/O 18 I/O 19 I/O 20 I/O 21 I/O 22 I/O 23 GND I/O 24 I/O 25 I/O 26 I/O 27 I/O 28 I/O 29 I/O 30 I/O 31 68 Lead CQFP Commercial Pinout Option (A) I/O 16 A18 A17 CS4\ CS3\ CS2\ CS1\ NC Vcc NC NC OE\ WE\ A16 A15 A14 I/O 15 * Operating Temperature Ranges Military (-55oC to +125oC) Industrial (-40oC to +85oC) I/O17 I/O18 I/O19 Vss I/O20 I/O21 I/O22 I/O23 Vcc I/O24 I/O25 I/O26 I/O27 Vss I/O28 I/O29 I/O30 No.702 No.904 9 8 7 6 5 4 3 2 1 68 67 66 65 64 63 62 61 OPTIONS 60 59 58 57 56 55 54 53 52 51 50 49 48 47 46 45 44 Vcc A11 A12 A13 A14 A15 A16 CS1\ OE\ CS2\ A17 WE2\ WE3\ WE4\ A18 NC NC Operation with single 5V supply High speed: 17, 20, 25 and 35ns Built in decoupling caps for low noise Organized as 512Kx32 , byte selectable Low power CMOS TTL Compatible Inputs and Outputs Future offerings 3.3V Power Supply 15 ns Ultra High Speed 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 25 26 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 25 26 60 59 58 57 56 55 54 53 52 51 50 49 48 47 46 45 44 I/O 14 I/O 13 I/O 12 Vss I/O 11 I/O 10 I/O 9 I/O 8 Vcc I/O 7 I/O 6 I/O 5 I/O 4 Vss I/O 3 I/O 2 I/O 1 I/O 31 A6 A5 A4 A3 A2 A1 A0 Vcc A13 A12 A11 A10 A9 A8 A7 I/O 0 * * * * * * * 9 8 7 6 5 4 3 2 1 68 67 66 65 64 63 62 61 I/O 0 I/O 1 I/O 2 I/O 3 I/O 4 I/O 5 I/O 6 I/O 7 GND I/O 8 I/O 9 I/O 10 I/O 11 I/O 12 I/O 13 I/O 14 I/O 15 FEATURES 27 28 29 30 31 32 33 34 35 36 37 38 39 40 41 42 43 SMD 5962-94611 (Military Pinout) MIL-STD-883 27 28 29 30 31 32 33 34 35 36 37 38 39 40 41 42 43 * * 68 Lead CQFP (Q) Military SMD Pinout Option 66 Lead PGA (P) Military SMD Pinout (no indicator) A CS GENERAL DESCRIPTION The Austin Semiconductor, Inc. AS8S512K32 and AS8S512K32A are 16 Megabit CMOS SRAM Modules organized as 512Kx32 bits. These devices achieve high speed access, low power consumption and high reliability by employing advanced CMOS memory technology. This military temperature grade product is ideally suited for military and space applications. CS \ CS CS For more products and information please visit our web site at www.austinsemiconductor.com AS8S512K32 & AS8S512K32A Rev. 3.1 12/01 Austin Semiconductor, Inc. reserves the right to change products or specifications without notice. 1 SRAM Austin Semiconductor, Inc. AS8S512K32 & AS8S512K32A CS M3 CS M2 CS M1 CS\1 CS1\ WE\ OE\ A0 - A18 M0 512K x 8 CS 512K x 8 CS\2 CS2\ 512K x 8 CS3\ CS\3 512K x 8 CS\4 CS4\ I/O 24 - I/O 31 I/O 16 - I/O 23 I/O 8 - I/O 15 I/O 0 - I/O 7 COMMERCIAL PINOUT/BLOCK DIAGRAM MILITARY PINOUT/BLOCK DIAGRAM TRUTH TABLE OE\ L CE\ CS L WE\ H I/O DOUT POWER ACTIVE Write(2) X L L DIN ACTIVE Standby X H X High Z STANDBY MODE Read AS8S512K32 & AS8S512K32A Rev. 3.1 12/01 Austin Semiconductor, Inc. reserves the right to change products or specifications without notice. 2 SRAM AS8S512K32 & AS8S512K32A Austin Semiconductor, Inc. This is a stress rating only and functional operation on the device at these or any other conditions above those indicated in the operational sections of this specification is not implied. Exposure to absolute maximum rating conditions for extended periods may affect reliability. **Junction temperature depends upon package type, cycle time, loading, ambient temperature and airflow. See the Application Information section at the end of this datasheet for more information. ABSOLUTE MAXIMUM RATINGS* Voltage of Vcc Supply Relative to Vss......................-.5V to +7V Storage Temperature............................................-65C to +150C Short Circuit Output Current(per I/O).................................20mA Voltage on Any Pin Relative to Vss....................-.5V to Vcc+1V Maximum Junction Temperature**...................................+150C *Stresses greater than those listed under "Absolute Maximum Ratings" may cause permanent damage to the device. ELECTRICAL CHARACTERISTICS AND RECOMMENDED DC OPERATING CONDITIONS (-55oC < TA < 125oC and -40oC to +85oC; Vcc = 5V +10%) DESCRIPTION Input High (logic 1) Voltage SYMBOL VIH MIN 2.2 VIL -0.5 0.8 ILI1 -10 10 V A ILI2 -10 10 A Output(s) Disabled 0V<VOUT<VCC ILO -10 10 A Output High Voltage IOH = 4.0mA VOH 2.4 Output Low Voltage IOL = 8.0mA VOL Input Low (logic 1) Voltage Input Leakage Current ADD,OE Input Leakage Current WE, CE Output Leakage Current I/O CONDITIONS 0V<VIN<VCC VCC Supply Voltage MAX UNITS NOTES VCC+.5 V 1 4.5 1,2 V 1 0.4 V 1 5.5 V 1 SYMBOL -17 -20 MAX -25 -35 -45 -55 UNITS NOTES CS\<VIL; VCC = MAX Power Supply f = MAX = 1/ tRC (MIN) Current: Operating Outputs Open Icc 700 650 600 570 570 550 mA 3,13 CS\>VIH; VCC = MAX Power Supply f = MAX = 1/ tRC (MIN) Current: Standby Outputs Open ISBT1 240 240 190 190 150 150 mA 3, 13 ISBT2 80 80 80 80 80 80 mA DESCRIPTION CMOS Standby AS8S512K32 & AS8S512K32A Rev. 3.1 12/01 CONDITIONS VIN = VCC - 0.2V, or VSS +0.2V VCC=Max; f = 0Hz Austin Semiconductor, Inc. reserves the right to change products or specifications without notice. 3 SRAM AS8S512K32 & AS8S512K32A Austin Semiconductor, Inc. CAPACITANCE (VIN = 0V, f = 1MHz, TA = 25oC)1 CADD SYMBOL PARAMETER A0 - A18 Capacitance MAX 50 UNITS pF COE OE\ Capacitance CWE, CCS 50 pF WE\ and CS\ Capacitance 20 pF CIO I/O 0- I/O 31 Capacitance 20 pF CWE ("A" version) WE\ Capacitance 50 pF NOTE: 1. This parameter is sampled. AC TEST CONDITIONS Test Specifications Input pulse levels.........................................VSS to 3V Input rise and fall times.........................................5ns Input timing reference levels...............................1.5V Output reference levels........................................1.5V Output load..............................................See Figure 1 IOL Current Source Device Under Test - + Vz = 1.5V (Bipolar Supply) + Ceff = 50pf Current Source NOTES: Vz is programmable from -2V to + 7V. IOL and IOH programmable from 0 to 16 mA. Vz is typically the midpoint of VOH and VOL. IOL and IOH are adjusted to simulate a typical resistive load circuit. AS8S512K32 & AS8S512K32A Rev. 3.1 12/01 IOH Figure 1 Austin Semiconductor, Inc. reserves the right to change products or specifications without notice. 4 SRAM AS8S512K32 & AS8S512K32A Austin Semiconductor, Inc. ELECTRICAL CHARACTERISTICS AND RECOMMENDED AC OPERATING CONDITIONS (NOTE 5) (-55oC<TA < 125oC and -40oC to +85oC; VCC = 5V +10%) DESCRIPTION READ CYCLE READ cycle time Address access time Chip select access time Output hold from address change Chip select to output in Low-Z Chip select to output in High-Z Output enable access time Output enable to output in Low-Z Output disable to output in High-Z WRITE CYCLE WRITE cycle time Chip select to end of write Address valid to end of write Address setup time Address hold from end of write WRITE pulse width WRITE pulse width Data setup time Data hold time Write disable to output in Low-z Write enable to output in High-Z AS8S512K32 & AS8S512K32A Rev. 3.1 12/01 SYMBOL t RC AA t ACS t OH t LZCS t HZCS t AOE t LZOE t HZOE MIN 17 t t WC CW AW t AS t AH t WP1 t WP2 t DS t DH t LZWE t HZWE t t -17 MAX -20 MIN MAX -25 MIN MAX 20 17 17 2 2 25 20 20 0 2 2 10 10 17 15 15 2 1 15 15 12 0 2 20 15 15 2 1 15 15 10 0 2 9 25 17 17 2 1 17 17 12 0 2 11 35 20 20 2 1 20 20 15 0 2 13 15 ns ns ns ns ns ns ns ns ns ns ns 20 20 0 20 45 25 25 2 1 25 25 20 0 2 15 20 2 2 0 55 25 25 2 1 25 25 20 0 2 15 UNITS NOTES ns ns ns ns ns ns ns ns ns 55 55 20 20 15 MAX 55 2 2 0 MIN 45 45 15 15 12 -55 MAX 45 2 2 0 12 -45 MIN 35 35 12 12 0 12 35 25 25 2 2 9 9 -35 MIN MAX 4,6,7 4,6,7 4,6 4,6 4,6,7 4,6,7 Austin Semiconductor, Inc. reserves the right to change products or specifications without notice. 5 SRAM AS8S512K32 & AS8S512K32A Austin Semiconductor, Inc. READ CYCLE NO. 1 tRC ADDRESS DATA I/O tAA 1234 12345 1 1234 1 1234 12345 1 1234 1 DATA VALID PREVIOUS DATA VALID 1234 12345 1 1234 1 tOH READ CYCLE NO. 2 tRC ADDRESS tAA 1234 12345 12345678 1234 12345 12345678 12345 1234 12345678 CS\ 12345 1234 12345678 1234 12345678 tACS t 1234 123456789012 1234 123456789012 LZCS 12345 1234 12345 123456789012 1234 123456789012 OE\ 12345 12345 1234 123456789012 DATA I/O AS8S512K32 & AS8S512K32A Rev. 3.1 12/01 tAOE tLZOE HIGH IMPEDANCE 1234 123 1 1234 1 1234 123 1 1234 1 1234 1 1 123 1234 11234 1234 1 123 123456789 1234567 123456 123456789 1234567 123456 1234567 123456 123456789 123456789 1234567 123456 123456789 123456 t 123456789012 1234567 123456 HZCS 123456789012 1234567 123456 123456789012 1234567 123456 123456789012 1234567 123456 123456789012 1234567 123456 tHZOE DATA VALID Austin Semiconductor, Inc. reserves the right to change products or specifications without notice. 6 SRAM AS8S512K32 & AS8S512K32A Austin Semiconductor, Inc. WRITE CYCLE NO. 1 (Chip Select Controlled) t WC ADDRESS t AW 123456 1234 12345678 1234 123456 12345678 1234 12345678 CS\123456 1234 123456 12345678 1234 123456 12345678 tAS WE\ tAH 1234567 123456789012 12345 123456789012 1234567 12345 123456789012 1234567 12345 123456789012 1234567 12345 123456789012 1234567 12345 tCW t WP1 1 123456 123456 123456 123456 tHZWE 1 12345678901234 1234 1 12345678901234 1 1234 1 12345678901234 1234 1 DATA I/O 1 tDS tLZWE tDH DATA VALID 1234 1234 1234 1234 1234 1234 1234 WRITE CYCLE NO. 2 (Write Enable Controlled) tWC ADDRESS tAS 123456 123456 123456 123456 12345678 12345678 WE\ 12345678 12345678 CS\ t AW 123456789012 123456 12345 123456789012 123456 12345 123456789012 123456 12345 123456789012 123456 12345 t WP2 1 tDS DATA I/O AS8S512K32 & AS8S512K32A Rev. 3.1 12/01 tAH tCW tDH DATA VALID Austin Semiconductor, Inc. reserves the right to change products or specifications without notice. 7 SRAM AS8S512K32 & AS8S512K32A Austin Semiconductor, Inc. NOTES 1. All voltages referenced to VSS (GND). 2. -2V for pulse width <20ns. 3. ICC is dependent on output loading and cycle rates. unloaded, and f= 7. At any given temperature and voltage condition, tHZCS, is less than tLZCS, and tHZWE is less than tLZWE. 8. WE\ is HIGH for READ cycle. 9. Device is continuously selected. Chip selects and output enable are held in their active state. 10. Address valid prior to or coincident with latest occurring chip enable. 11. tRC= READ cycle time. 12. Chip enable (CS\) and write enable (WE\) can initiate and terminate a WRITE cycle. 13. ICC is for 32 bit mode. 1 t RC(MIN) HZ. The specified value applies with the outputs 4. This parameter guaranteed but not tested. 5. Test conditions as specified with output loading as shown in Fig. 1 unless otherwise noted. 6. tHZCS, tHZOE and tHZWE are specified with CL= 5pF as in Fig. 2. Transition is measured +/- 200 mV typical from steady state voltage, allowing for actual tester RC time constant. LOW POWER CHARACTERISTICS (L Version Only) " " # $ % $ % &' $ % !! LOW VCC DATA RETENTION WAVEFORM DATA RETENTION MODE VCC 4.5V 4.5V VDR>2V t t CDR CS\ 1-4 R 123456789012345678 12345 12345678 123456789012345678 12345 12345678 12345678 12345 123456789012345678 12345 12345678 123456789012345678 12345 12345678 123456789012345678 12345 12345678 123456789012345678 12345 12345678 123456789012345678 12345 12345678 123456789012345678 AS8S512K32 & AS8S512K32A Rev. 3.1 12/01 VDR 123456789012345678 12345678 12345 123456789012345678 12345678 12345 123456789012345678 12345678 12345 123456789012345678 12345678 12345 123456789012345678 12345678 12345 123456789012345678 12345678 12345 123456789012345678 12345678 12345 123456789012345678 12345678 12345 Austin Semiconductor, Inc. reserves the right to change products or specifications without notice. 8 SRAM AS8S512K32 & AS8S512K32A Austin Semiconductor, Inc. MECHANICAL DEFINITIONS* ASI Case #702 (Package Designator Q) SMD 5962-94611, Case Outline M 4 x D2 DETAIL A 4 x D1 D R 1o - 7o B b L1 e SEE DETAIL A A1 A A2 E SMD SPECIFICATIONS SYMBOL A A1 A2 B b D D1 D2 E e R L1 MIN 0.123 0.118 0.000 MAX 0.200 0.186 0.020 0.010 REF 0.013 0.017 0.800 BSC 0.870 0.980 0.936 0.890 1.000 0.956 0.050 BSC 0.005 0.035 --0.045 *All measurements are in inches. AS8S512K32 & AS8S512K32A Rev. 3.1 12/01 Austin Semiconductor, Inc. reserves the right to change products or specifications without notice. 9 SRAM AS8S512K32 & AS8S512K32A Austin Semiconductor, Inc. MECHANICAL DEFINITIONS* ASI Case #904 (Package Designator P ) SMD 5962-94611, Case Outline T 4xD D1 A D2 Pin 56 A1 Pin 1 b1 (identified by 0.060 square pad) E1 e b Pin 66 e Pin 11 L SMD SPECIFICATIONS SYMBOL A A1 b b1 D D1/E1 D2 e L MIN 0.144 0.025 0.016 0.045 1.065 MAX 0.181 0.035 0.020 0.055 1.085 1.000 TYP 0.600 TYP 0.100 TYP 0.145 0.155 *All measurements are in inches. AS8S512K32 & AS8S512K32A Rev. 3.1 12/01 Austin Semiconductor, Inc. reserves the right to change products or specifications without notice. 10 SRAM AS8S512K32 & AS8S512K32A Austin Semiconductor, Inc. ORDERING INFORMATION EXAMPLE: AS8S512K32Q-25L/XT Device Number Options** AS8S512K32 AS8S512K32 AS8S512K32 AS8S512K32 AS8S512K32 AS8S512K32 A A A A A A Package Type Q Q Q Q Q Q Speed ns -17 -20 -25 -35 -45 -55 Options** Process L L L L L L /* /* /* /* /* /* Options** Process L L L L L L /* /* /* /* /* /* EXAMPLE: AS8S512K32AP-25/XT Device Number Options** AS8S512K32 AS8S512K32 AS8S512K32 AS8S512K32 AS8S512K32 AS8S512K32 A A A A A A Package Type P P P P P P Speed ns -17 -20 -25 -35 -45 -55 *AVAILABLE PROCESSES -40oC to +85oC -55oC to +125oC -55oC to +125oC IT = Industrial Temperature Range XT = Extended Temperature Range 833C = Full Military Processing **DEFINITION OF OPTIONS A = Commercial Pinout no indicator = Military Pinout L = Low Power Data Retention Mode AS8S512K32 & AS8S512K32A Rev. 3.1 12/01 Austin Semiconductor, Inc. reserves the right to change products or specifications without notice. 11 SRAM Austin Semiconductor, Inc. AS8S512K32 & AS8S512K32A ASI TO DSCC PART NUMBER CROSS REFERENCE Package Designator Q Package Designator P ASI Part # SMD Part # ASI Part # SMD Part # AS8S512K32Q-17L/883C AS8S512K32Q-17L/883C AS8S512K32Q-20L/883C AS8S512K32Q-20L/883C AS8S512K32Q-25L/883C AS8S512K32Q-25L/883C AS8S512K32Q-35L/883C AS8S512K32Q-35L/883C AS8S512K32Q-45L/883C AS8S512K32Q-45L/883C AS8S512K32Q-55L/883C AS8S512K32Q-55L/883C 5962-9461110HMA 5962-9461110HMC 5962-9461109HMA 5962-9461109HMC 5962-9461108HMA 5962-9461108HMC 5962-9461107HMA 5962-9461107HMC 5962-9461106HMA 5962-9461106HMC 5962-9461105HMA 5962-9461105HMC AS8S512K32P-17L/883C AS8S512K32P-17L/883C AS8S512K32P-20L/883C AS8S512K32P-20L/883C AS8S512K32P-25L/883C AS8S512K32P-25L/883C AS8S512K32P-35L/883C AS8S512K32P-35L/883C AS8S512K32P-45L/883C AS8S512K32P-45L/883C AS8S512K32P-55L/883C AS8S512K32P-55L/883C 5962-9461110HTA 5962-9461110HTC 5962-9461109HTA 5962-9461109HTC 5962-9461108HTA 5962-9461108HTC 5962-9461107HTA 5962-9461107HTC 5962-9461106HTA 5962-9461106HTC 5962-9461105HTA 5962-9461105HTC AS8S512K32Q-17/883C AS8S512K32Q-17/883C AS8S512K32Q-20/883C AS8S512K32Q-20/883C AS8S512K32Q-25/883C AS8S512K32Q-25/883C AS8S512K32Q-35/883C AS8S512K32Q-35/883C AS8S512K32Q-45/883C AS8S512K32Q-45/883C AS8S512K32Q-55/883C AS8S512K32Q-55/883C 5962-9461116HMA 5962-9461116HMC 5962-9461115HMA 5962-9461115HMC 5962-9461114HMA 5962-9461114HMC 5962-9461113HMA 5962-9461113HMC 5962-9461112HMA 5962-9461112HMC 5962-9461111HMA 5962-9461111HMC AS8S512K32P-17/883C AS8S512K32P-17/883C AS8S512K32P-20/883C AS8S512K32P-20/883C AS8S512K32P-25/883C AS8S512K32P-25/883C AS8S512K32P-35/883C AS8S512K32P-35/883C AS8S512K32P-45/883C AS8S512K32P-45/883C AS8S512K32P-55/883C AS8S512K32P-55/883C 5962-9461116HTA 5962-9461116HTC 5962-9461115HTA 5962-9461115HTC 5962-9461114HTA 5962-9461114HTC 5962-9461113HTA 5962-9461113HTC 5962-9461112HTA 5962-9461112HTC 5962-9461111HTA 5962-9461111HTC AS8S512K32 & AS8S512K32A Rev. 3.1 12/01 Austin Semiconductor, Inc. reserves the right to change products or specifications without notice. 12