AUIRLL014N
VDSS 55V
RDS(on) max. 0.14
ID 2.0A
Description
Specifically designed for Automotive applications, this cellular
design of HEXFET® Power MOSFETs utilizes the latest
processing techniques to achieve low on-resistance per silicon
area. This benefit combined with the fast switching speed and
ruggedized device design that HEXFET power MOSFETs are
well known for, provides the designer with an extremely efficient
and reliable device for use in Automotive and a wide variety of
other applications
Features
Advanced Planar Technology
Low On-Resistance
Logic Level Gate Drive
Dynamic dv/dt Rating
150°C Operating Temperature
Fast Switching
Fully Avalanche Rated
Repetitive Avalanche Allowed up to Tjmax
Lead-Free, RoHS Compliant
Automotive Qualified *
1 2015-10-29
HEXFET® is a registered trademark of Infineon.
*Qualification standards can be found at www.infineon.com
AUTOMOTIVE GRADE
Symbol Parameter Max. Units
ID @ TA = 25°C Continuous Drain Current, VGS @ 10V 2.8
A
ID @ TA = 25°C Continuous Drain Current, VGS @ 10V 2.0
ID @ TA = 70°C Continuous Drain Current, VGS @ 10V 1.6
IDM Pulsed Drain Current 16
PD @TA = 25°C Maximum Power Dissipation (PCB Mount) 2.1
PD @TA = 25°C Maximum Power Dissipation (PCB Mount) 1.0
Linear Derating Factor (PCB Mount) 8.3 mW/°C
VGS Gate-to-Source Voltage ± 16 V
EAS Single Pulse Avalanche Energy (Thermally Limited) 32
mJ
IAR Avalanche Current 2.0 A
dv/dt Peak Diode Recovery dv/dt 7.2 V/ns
TJ Operating Junction and -55 to + 150 °C
TSTG Storage Temperature Range
W
EAR Repetitive Avalanche Energy 0.1 mJ
Absolute Maximum Ratings
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress
ratings only; and functional operation of the device at these or any other condition beyond those indicated in the specifications is not
implied. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability. The thermal resistance
and power dissipation ratings are measured under board mounted and still air conditions. Ambient temperature (TA) is 25°C, unless
otherwise specified.
Thermal Resistance
Symbol Parameter Typ. Max. Units
°C/W
RJA Junction-to-Ambient (PCB Mount, steady state) 90 120
RJA Junction-to-Ambient (PCB Mount, steady state) 50 60
S
G
SOT-223
AUIRLL014N
D
Base part number Package Type Standard Pack Orderable Part Number
Form Quantity
AUIRLL014N SOT-223 Tape and Reel 2500 AUIRLL014NTR
G D S
Gate Drain Source
D
HEXFET® Power MOSFET
AUIRLL014N
2 2015-10-29
Notes:
Repetitive rating; pulse width limited by max. junction temperature. (See fig. 11)
V
DD = 25V, starting TJ = 25°C, L = 4.0mH, RG = 25, IAS = 4.0A. (See fig. 12)
ISD 2.0A, di/dt 170A/µs, VDD V(BR)DSS, TJ 150°C.
Pulse width 300µs; duty cycle 2%.
When mounted on FR-4 board using minimum recommended footprint.
When mounted on 1 inch square copper board, for comparison with other SMD devices.
Static @ TJ = 25°C (unless otherwise specified)
Parameter Min. Typ. Max. Units Conditions
V(BR)DSS Drain-to-Source Breakdown Voltage 55 ––– ––– V VGS = 0V, ID = 250µA
V(BR)DSS/TJ Breakdown Voltage Temp. Coefficient ––– 0.015 ––– V/°C Reference to 25°C, ID = 1mA
RDS(on) Static Drain-to-Source On-Resistance
––– ––– 0.14 VGS = 10V, ID = 2.0A
––– ––– 0.20 VGS = 5.0V, ID = 1.2A
––– ––– 0.28 VGS = 4.0V, ID = 1.0A
VGS(th) Gate Threshold Voltage 1.0 ––– 2.0 V VDS = VGS, ID = 250µA
gfs Forward Trans conductance 2.3 ––– ––– S VDS = 25V, ID = 1.0A
IDSS Drain-to-Source Leakage Current ––– ––– 25 µA VDS = 55V, VGS = 0V
––– ––– 250 VDS = 44V,VGS = 0V,TJ = 150°C
IGSS Gate-to-Source Forward Leakage ––– ––– 100 nA VGS = 16V
Gate-to-Source Reverse Leakage ––– ––– -100 VGS = -16V
Dynamic Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Qg Total Gate Charge ––– 9.5 14
nC
ID = 2.0A
Qgs Gate-to-Source Charge ––– 1.1 1.7 VDS = 44V
Qgd Gate-to-Drain Charge ––– 3.0 4.4 VGS = 10V, See Fig 6 and 9
td(on) Turn-On Delay Time ––– 5.1 –––
ns
VDD = 28V
tr Rise Time ––– 4.9 ––– ID = 2.0A
td(off) Turn-Off Delay Time ––– 14 ––– RG = 6.0
tf Fall Time ––– 2.9 ––– RD = 14See Fig. 10
Ciss Input Capacitance ––– 230 –––
pF
VGS = 0V
Coss Output Capacitance ––– 66 ––– VDS = 25V
Crss Reverse Transfer Capacitance ––– 30 ––– ƒ = 1.0MHz, See Fig.5
Diode Characteristics
Parameter Min. Typ. Max. Units Conditions
IS Continuous Source Current ––– ––– 1.3
A
MOSFET symbol
(Body Diode) showing the
ISM Pulsed Source Current ––– ––– 16 integral reverse
(Body Diode) p-n junction diode.
VSD Diode Forward Voltage ––– ––– 1.0 V TJ = 25°C,IS = 2.0A,VGS = 0V
trr Reverse Recovery Time ––– 41 61 ns TJ = 25°C ,IF = 2.0A,
Qrr Reverse Recovery Charge ––– 73 110 nC di/dt = 100A/µs
ton Forward Turn-On Time Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
AUIRLL014N
3 2015-10-29
Fig. 2 Typical Output Characteristics
Fig. 3 Typical Transfer Characteristics Fig. 4 Normalized On-Resistance
vs. Temperature
Fig. 1 Typical Output Characteristics
1
10
100
0.1 1 10 100
20µs PULSE WIDTH
T = 25°C
A
J
DS
V , Drain-to-Source Voltage (V)
3.0V
VGS
TOP 15V
10V
7.0V
5.5V
4.5V
4.0V
3.5V
BOTTOM 3.0V
D
I , Drain-to-Source Current (A)
1
10
100
0.1 1 10 100
A
DS
V , Drain-to-Source Voltage (V)
D
I , Drain-to-Source Current (A)
20µs PULSE WIDTH
T = 150°C
J
3.0V
VGS
TOP 15V
10V
7.0V
5.5V
4.5V
4.0V
3.5V
BOTTOM 3.0V
1
10
100
3.0 4.0 5.0 6.0 7.0
T = 25°C
T = 150°C
J
J
GS
V , Gate-to-Source Voltage (V)
D
I , Drain-to-Source Current (A)
A
V = 25V
20µs PULSE WIDTH
DS
0.0
0.5
1.0
1.5
2.0
-60 -40 -20 0 20 40 60 80 100 120 140 160
J
T , Junction Temperature (°C)
R , Drain-to-Source On Resistance
DS(on)
(Normalized)
V = 10V
GS
A
I = 2.0A
D
AUIRLL014N
4 2015-10-29
Fig 5. Typical Capacitance vs.
Drain-to-Source Voltage
Fig 6. Typical Gate Charge vs.
Gate-to-Source Voltage
Fig 8. Maximum Safe Operating Area
Fig. 7 Typical Source-to-Drain Diode
Forward Voltage
0
100
200
300
400
110100
C, Capacitance (pF)
DS
V , Drain-to-Source Voltage (V)
A
V = 0V, f = 1MHz
C = C + C , C SHORTED
C = C
C = C + C
GS
iss gs gd ds
rss gd
oss ds gd
C
iss
C
oss
C
rss
0
4
8
12
16
20
03691215
Q , Total Gate Charge (nC)
G
V , Gate-to-Source Voltage (V)
GS
A
FOR TEST CIRCUIT
SEE FIGURE 9
I = 2.0A
V = 44V
V = 28V
D
DS
DS
0.1
1
10
100
0.40.60.81.01.21.41.6
T = 25°C
T = 150°C
J
J
V = 0V
GS
V , Source-to-Drain Voltage (V)
I , Reverse Drain Current (A)
SD
SD
A
0.1
1
10
100
110100
V , Drain-to-Source Voltage (V)
DS
I , Drain Current (A)
OPERATION IN THIS AREA LIMITED
BY R
D
DS(on)
T = 25°C
T = 150°C
Single Pulse
10µs
100µs
1ms
10ms
A
A
J
AUIRLL014N
5 2015-10-29
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Ambient
Fig 9b. Gate Charge Test Circuit
Fig 10a. Switching Time Test Circuit
Fig 10b. Switching Time Waveforms
Vds
Vgs
Id
Vgs(th)
Qgs1 Qgs2 Qgd Qgodr
Fig 9a. Basic Gate Charge Waveform
0.1
1
10
100
1000
0.00001 0.0001 0.001 0.01 0.1 1 10 100 1000
t , Rectangular Pulse Duration (sec)
1
D = 0.50
0.01
0.02
0.05
0.10
0.20
SINGLE PULSE
(THERMAL RESPONSE)
A
Thermal Response (Z )
thJA
P
t
2
1
t
DM
Notes:
1. Duty factor D = t / t
2. Peak T = P x Z + T
12
J
DM thJA
A
AUIRLL014N
6 2015-10-29
Fig 12a. Unclamped Inductive Test Circuit Fig 12c. Maximum Avalanche Energy
Vs. Drain Current
Fig 12b. Unclamped Inductive Waveforms
tp
V
(BR)DSS
I
AS
R
G
I
AS
0.01
t
p
D.U.T
L
VDS
+
-V
DD
DRIVER
A
15V
20V
0
20
40
60
80
25 50 75 100 125 150
J
E , Single Pulse Avalanche Energy (mJ)
AS
A
Starting T , Junction Temperature (°C)
V = 25V
I
TOP 1.8A
3.2A
BOTTOM 4.0A
DD
D
AUIRLL014N
7 2015-10-29
Fig 13. Peak Diode Recovery dv/dt Test Circuit for N-Channel HEXFET® Power MOSFETs
AUIRLL014N
9 2015-10-29
SOT-223(TO-261AA) Tape and Reel (Dimensions are shown in millimeters (inches)
4.10 (.161)
3.90 (.154) 1.85 (.072)
1.65 (.065)
2.05 (.080)
1.95 (.077)
12.10 (.475)
11.90 (.469)
7.10 (.279)
6.90 (.272)
1.60 (.062)
1.50 (.059)
TYP.
7.55 (.297)
7.45 (.294)
7.60 (.299)
7.40 (.292)
2.30 (.090)
2.10 (.083)
16.30 (.641)
15.70 (.619)
0.35 (.013)
0.25 (.010)
FEED DIRECTION
TR
13.20 (.519)
12.80 (.504)
50.00 (1.969)
MIN.
330.00
(13.000)
MAX.
NOTES :
1. CONTROLLING DIMENSION: MILLIMETER.
2. OUTLINE CONFORMS TO EIA-481 & EIA-541.
3. EACH O330.00 (13.00) REEL CONTAINS 2,500 DEVICES.
3
NOTES :
1. OUTLINE COMFORMS TO EIA-418-1.
2. CONTROLLING DIMENSION: MILLIMETER..
3. DIMENSION MEASURED @ HUB.
4. INCLUDES FLANGE DISTORTION @ OUTER EDGE.
15.40 (.607)
11.90 (.469)
18.40 (.724)
MAX.
14.40 (.566)
12.40 (.488)
4
4
Note: For the most current drawing please refer to IR website at http://www.irf.com/package/
AUIRLL014N
10 2015-10-29
Qualification Information
Qualification Level
Automotive
(per AEC-Q101)
Comments: This part number(s) passed Automotive qualification. Infineon’s
Industrial and Consumer qualification level is granted by extension of the higher
Automotive level.
Moisture Sensitivity Level SOT-223 MSL1
ESD
Machine Model Class M1A (+/- 50V)†
AEC-Q101-002
Human Body Model Class H0 (+/- 250V)†
AEC-Q101-001
Charged Device Model Class C5 (+/- 1125V)†
AEC-Q101-005
RoHS Compliant Yes
Published by
Infineon Technologies AG
81726 München, Germany
© Infineon Technologies AG 2015
All Rights Reserved.
IMPORTANT NOTICE
The information given in this document shall in no event be regarded as a guarantee of conditions or characteristics
(“Beschaffenheitsgarantie”). With respect to any examples, hints or any typical values stated herein and/or any
information regarding the application of the product, Infineon Technologies hereby disclaims any and all warranties and
liabilities of any kind, including without limitation warranties of non-infringement of intellectual property rights of any third
party.
In addition, any information given in this document is subject to customer’s compliance with its obligations stated in this
document and any applicable legal requirements, norms and standards concerning customer’s products and any use of
the product of Infineon Technologies in customer’s applications.
The data contained in this document is exclusively intended for technically trained staff. It is the responsibility of
customer’s technical departments to evaluate the suitability of the product for the intended application and the
completeness of the product information given in this document with respect to such application.
For further information on the product, technology, delivery terms and conditions and prices please contact your nearest
Infineon Technologies office (www.infineon.com).
WARNINGS
Due to technical requirements products may contain dangerous substances. For information on the types in question
please contact your nearest Infineon Technologies office.
Except as otherwise explicitly approved by Infineon Technologies in a written document signed by authorized
representatives of Infineon Technologies, Infineon Technologies’ products may not be used in any applications where a
failure of the product or any consequences of the use thereof can reasonably be expected to result in personal injury.
Revision History
Date Comments
10/29/2015 Updated datasheet with corporate template
Corrected ordering table on page 1.
3/25/2014
Added "Logic Level Gate Drive" bullet in the features section on page 1
Updated part marking on page 8
Updated data sheet with new IR corporate template
† Highest passing voltage.
