MG600J2YS61A TOSHIBA IGBT Module Silicon N Channel IGBT MG600J2YS61A(600V/600A 2in1) High Power Switching Applications Motor Control Applications * Integrates a complete half bridge power circuit and fault-signal output circuit in one package. (short circuit and over temperature) * The electrodes are isolated from case. * Low thermal resistance * VCE (sat) = 2.2 V (typ.) Equivalent Circuit 1 5 6 FO 7 E1/C2 4 OT 1 2 FO 3 E2 Signal terminal 1. G (L) 2. FO (L) 3. E (L) 4. VD 5. G (H) 6. FO (H) 7. E (H) 8. Open 1 2003-08-21 MG600J2YS61A Package Dimensions: 2-123C1B 1. G (L) 2. FO (L) 3. E (L) 4. VD 5. G (H) 6. FO (H) 7. E (H) 8. Open 5 6 3 4 1 2 25.4 0.6 8 1. G (L) 2. FO (L) 3. E (L) 4. VD 5. G (H) 6. FO (H) 7. E (H) 8. Open 2.54 7 2.54 Signal Terminal Layout 2.54 Weight: 375 g 2 2003-08-21 MG600J2YS61A Maximum Ratings (Ta = 25C) Stage Characteristics Symbol Rating Unit Collector-emitter voltage VCES 600 V Gate-emitter voltage VGES 20 V DC IC 600 1 ms ICP 1200 DC IF 600 1 ms IFM 1200 Collector power dissipation (Tc = 25C) PC 2770 W Control voltage (OT) VD 20 V Fault input voltage VFO 20 V Fault input current IFO 20 mA Tj 150 C Storage temperature range Tstg -40~125 C Operation temperature range Tope -20~100 C Isolation voltage Visol 2500 (AC 1 min) V 3 (M5) Nm Collector current Inverter Forward current Control Junction temperature Module Screw torque A A Electrical Characteristics (Tj = 25C) 1. Inverter Stage Characteristics Symbol Gate leakage current IGES Collector cut-off current ICES Test Condition Min Typ. Max Unit VGE = 20 V, VCE = 0 +3/-4 mA VGE = +10 V, VCE = 0 100 nA VCE = 600 V, VGE = 0 1.0 mA 6.0 7.0 8.0 V Tj = 25C 2.2 2.5 Tj = 125C 2.8 125 0.10 1.00 2.00 0.50 0.50 2.2 2.6 V Min Typ. Max Unit 720 A 100 125 C 6.5 s Gate-emitter cut-off voltage VGE (off) VCE = 5 V, IC = 600 mA Collector-emitter saturation voltage VCE (sat) VGE = 15 V, IC = 600 A Input capacitance Cies Turn-on delay time Switching time Turn-off time Fall time VCE = 10 V, VGE = 0, f = 1 MHz td (on) toff tf Reverse recovery time trr Forward voltage VF VCC = 300 V, IC = 600 A VGE = 15 V, RG = 5.1 IF = 600 A (Note 1) V nF s Note 1: Switching time test circuit & timing chart 2. Control (Tc = 25C) Characteristics Symbol Fault output current OC Over temperature OT Fault output delay time td (Fo) Test Condition VGE = 15 V VCC = 300 V, VGE = 15 V 3 2003-08-21 MG600J2YS61A 3. Module (Tc = 25C) Characteristics Symbol Junction to case thermal resistance Rth (j-c) Case to fin thermal resistance Rth (c-f) Test Condition Min Typ. Max Inverter IGBT stage 0.045 Inverter FRD stage 0.068 With silicon compound 0.013 Unit C/W C/W Switching Time Test Circuit RG IF -VGE IC VCC L RG Timing Chart 90% VGE 10% 90% Irr Irr 20% Irr IC 90% trr 10% 10% td (on) td (off) 4 tf 2003-08-21 MG600J2YS61A Remark <Short circuit capability condition> Short circuit capability is 6 s after fault output signal. Please keep following condition to use fault output signal. * VCC < = 375 V < VGE < * 13.8 V = = 16.0 V > * RG = 5.1 * Tj < = 125C <Gate voltage> To use this product, VGE must be provided higher than 13.8 V. In case VGE is less than 13.8 V, fault signal FO may not be output even under error conditions. <Recommneded conditions for application> Characteristics Symbol Min Typ. Max Unit P-N power terminal supply voltage VCC 300 375 V Gate voltage VGE 13.8 15 16 V Gate resistance RG 5.1 Switching frequency fc 20 kHz <For parallel use> For parallel use of this product, please use the same rank for both VCE (sat) and VF among IGBT in parallel without fail. VCE (sat) VCE (sat) Min Max 20 1.8 2.0 22 1.9 2.2 24 2.1 2.4 26 2.3 2.5 VF Min Max D 1.9 2.2 E 2.1 2.4 F 2.3 2.6 VF 5 2003-08-21 MG600J2YS61A IC - VCE 600 Common emitter Tj = 25C 500 15 V Collector current IC (A) VGE = 20 V 12 V 400 10 V 300 200 100 9V 0 0 1 2 3 4 5 Collector-emitter voltage VCE (V) IC - VCE 600 Common emitter 12 V Tj = 125C 10 V 500 15 V Collector current IC (A) VGE = 20 V 400 300 9V 200 100 0 0 1 2 3 4 5 Collector-emitter voltage VCE (V) 6 2003-08-21 MG600J2YS61A VCE - VGE Collector-emitter voltage VCE (V) 12 10 Common emitter Tj = 25C 8 600 A 6 4 IC = 900 A 2 300 A 0 0 5 10 Gate-emitter voltage VGE 15 20 15 20 (V) VCE - VGE Collector-emitter voltage VCE (V) 12 10 Common emitter Tj = 125C 8 6 600 A IC = 900 A 4 2 300 A 0 0 5 10 Gate-emitter voltage VGE (V) VCE - VGE Collector-emitter voltage VCE (V) 12 10 Common emitter Tj = 40C 8 6 600 A 4 IC = 900 A 2 300 A 0 0 5 10 Gate-emitter voltage VGE 7 15 20 (V) 2003-08-21 MG600J2YS61A IC - VGE 1000 Common emitter VCE = 5 V Collector current IC (A) 800 600 400 Tj = 125C -40 C 25C 200 0 0 4 8 Gate-emitter voltage VGE 12 (V) IF - VF 600 Common cathode VGE = 0 Forward current IF (A) 500 -40C 400 300 Tj = 25C 125C 200 100 0 0 0.5 1 2 1.5 Forward voltage 8 2.5 3 VF (V) 2003-08-21 MG600J2YS61A Switching time - RG 10000 Common emitter VCC = 300 V IC = 600 A VGE = 15 V Tj = 25C Tj = 125C toff 3000 Switching time (ns) ton td (on) td (off) 1000 tr 300 tf 100 0 5 10 15 20 25 Gate resistance RG () Switching time - IC 10000 3000 Common emitter VCC = 300 V RG = 5.1 VGE = 15 V Tj = 25C Tj = 125C toff Switching time (ns) 1000 ton td (on) td (off) 300 tr tf 100 30 10 0 100 200 400 300 Collector current IC 9 500 600 700 (A) 2003-08-21 MG600J2YS61A Eon, Eoff - RG 1000 Common emitter VCC = 300 V IC = 600 A VGE = 15 V Tj = 25C Tj = 125C Eon Eoff 100 Switching loss Eon, Eoff (mJ) 300 30 10 0 5 10 15 20 25 Gate resistance RG () Eon, Eoff - IC 100 Common emitter VCC = 300 V RG = 5.1 VGE = 15 V Eoff Eon Tj = 25C Tj = 125C 10 Switching loss Eon, Eoff (mJ) 30 3 1 0 100 200 300 400 Collector current IC 10 500 600 700 (A) 2003-08-21 MG600J2YS61A Irr, trr - IF 1000 Reverse recovery time trr (ns) Reveres recovery current Irr (A) Common emitter VCC = 300 V RG = 5.1 VGE = 15 V Tj = 25C Tj = 125C trr 300 100 Irr 30 10 0 100 200 300 400 Forward current IF 500 600 (A) Edsw - IF Reveres recovery loss Edsw (mJ) 10.00 3.00 1.00 0.30 Common emitter VCC = 300 V 0.10 0 100 200 300 RG = 5.1 Tj = 25C VGE = 15 V Tj = 125C 400 Forward current 11 500 600 700 IF (A) 2003-08-21 MG600J2YS61A VCE, VGE - QG 20 500 Common emitter RL = 0.5 Tj = 25C (V) 16 300 12 200 V 300 V 100 V 200 8 VCE = 0 4 100 0 0 Gate-emitter voltage VGE Collector-emitter voltage VCE (V) 400 1000 2000 3000 Charge 4000 5000 0 6000 QG (nC) C - VCE 1000000 300000 Cies Capacitance C (pF) 100000 30000 Coes 10000 Cres 3000 1000 300 100 0.01 VGE = 0 V f = 1 MHz Tc = 25C 0.1 1 10 100 Collector-emitter voltage VCE (V) 12 2003-08-21 MG600J2YS61A Reverse bias SOA 10000 3000 Collector current IC (A) 1000 300 100 30 10 3 1 0 Tj = 125C RG = 5.1 VGE = 15 V 100 200 300 400 500 600 700 Collector-emitter voltage VCE (V) Rth - tw 1 Tc = 25C 0.1 Rth (j-c) (C/W) Diode stage Transistor stage 0.01 0.001 0.001 0.01 0.1 Pulse width tw 13 1 10 (s) 2003-08-21 MG600J2YS61A RESTRICTIONS ON PRODUCT USE 030519EAA * The information contained herein is subject to change without notice. * The information contained herein is presented only as a guide for the applications of our products. No responsibility is assumed by TOSHIBA CORPORATION for any infringements of intellectual property or other rights of the third parties which may result from its use. No license is granted by implication or otherwise under any intellectual property or other rights of TOSHIBA CORPORATION or others. * TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to comply with the standards of safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of such TOSHIBA products could cause loss of human life, bodily injury or damage to property. In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as set forth in the most recent TOSHIBA products specifications. Also, please keep in mind the precautions and conditions set forth in the "Handling Guide for Semiconductor Devices," or "TOSHIBA Semiconductor Reliability Handbook" etc.. * The TOSHIBA products listed in this document are intended for usage in general electronics applications (computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances, etc.). These TOSHIBA products are neither intended nor warranted for usage in equipment that requires extraordinarily high quality and/or reliability or a malfunction or failure of which may cause loss of human life or bodily injury ("Unintended Usage"). Unintended Usage include atomic energy control instruments, airplane or spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments, medical instruments, all types of safety devices, etc.. Unintended Usage of TOSHIBA products listed in this document shall be made at the customer's own risk. * TOSHIBA products should not be embedded to the downstream products which are prohibited to be produced and sold, under any law and regulations. 14 2003-08-21