LEADLESS GLASS ZENER DIODES
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SCOTTSDALE DIVISION
1N3821UR-1 thru 1N3830AUR-1, e3 or
MLL3821 thru MLL3830A, e3
1N3821UR-1 thru
1N3830AUR-1,e3 or
MLL3821 thru MLL3830A,e3 hru MLL3830A,e3
DESCRIPTION APPEARANCE
This surface mountable zener diode series is similar to the lower voltage
1N3821 thru 1N3830 JEDEC registration except it is in a surface mount
DO-213AB package outline. It is an ideal selection for applications of high
density and low parasitic requirements. Due to its glass hermetic qualities
and enhanced metallurgical bonded internal construction, it is also well
suited for high reliability applications. This can be acquired by a source
control drawing (SCD), or simply by ordering device types with a MQ, MX
or MV prefix for equivalent screening to JAN, JANTX or JANTXV
respectively.
DO-213AB
IMPORTANT: For the most current data, consult MICROSEMI’s website: http://www.microsemi.com
FEATURES APPLIC ATIONS / BENEFITS
• Leadless package for surfac e mount equivalent to
1N3821 thru 1N3830A.
• Ideal for high-density mounting
• Lower voltage selections of 3.3 V to 7.5 V
• Hermetically sealed, double-slug glass construction
• Metallurgically enhanced contact construction
• Options for screening in accordance with MIL-PRF-
19500/115 for JAN, JANTX, and JANT XV with MQ, MX
or MV prefixes respectively for part numbers, e.g.
MX1N3821AUR-1, MV1N382 8AUR-1, etc.
• Axial lead “thru-hole” DO-13 p ackages per JEDEC
registration available as 1N3821A thru 1N3830A (see
separate data sheet with MIL-PRF- 19500/115
qualification)
• RoHS Compliant devices avai lable by adding “e3” suffix
• Regulates voltage over a broad op erating current
and temperature range
• Leadless package for surfac e mounting
• Tight voltage tolerances available
• Ideal for high-density mounting
• Metallurgically enhanced internal contact design
for greater reliability and lower thermal resistance
• Nonsensitive to ESD
• Hermetically sealed glass package
• Specified capacitance (see Figure 2)
• Inherently radiation hard as described in
Microsemi MicroNote 050
MAXIMUM RAT ING S MECHANICAL AND PACKAGING
• Power dissipation at 25ºC: 1.5 watts (also see derating
in Figure 1).
• Operating and Storage temperature: -65ºC to +175ºC
• Thermal Resistance: 40 ºC/W junction to en d cap, or
120ºC/W junction to ambient when mounted on FR4 PC
board (1 oz Cu) with recommended footprint (see last
page)
• Steady-State Power: 1.50 watts at end-cap
temperature TEC < 115oC, or 1.25 watts at TA = 25ºC
when mounted on FR4 PC board and recommended
footprint as described for thermal resistance (also se e
Figure 1)
• Forward voltage @200 mA: 1.2 volts (maximum)
• Solder Temperatures: 260 ºC for 10 s (max)
• CASE: Hermetically sealed glass MELF package
• TERMINALS: Tin-Lead (SN/Pb) or RoHS
compliant annealed matte-T in (Sn) plating
solderable per MIL-STD-750, method 2 02 6
• POLARITY: Cathode indicated by band. Dio de
to be operated with the bande d end p ositive with
respect to the opposite end for Zener regulation
• MARKING: Cathode band only
• TAPE & REEL optional: Standard per EIA-481-1-
A with 12 mm tape, 1500 per 7 inch reel or 5000
per 13 inch reel (add “TR” suffix to part number)
• WEIGHT: 0.05 grams
• See package dimensions on l ast page
Microsemi
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