P-CHANNEL ENHANCEMENT
MODE VERTICAL DMOS FET
ISSUE 2 – MARCH 94
FEATURES
* 100 Volt VDS
*R
DS(on)=8Ω
ABSOLUTE MAXIMUM RATINGS.
PARAMETER SYMBOL VALUE UNIT
Drain-Source Voltage VDS -100 V
Continuo us Drain Cur rent at Tamb=25°C ID-230 mA
Pulsed Drain Current IDM -3 A
Gate Source Voltage VGS ± 20 V
Power Dissipation at Tamb=25°C Ptot 700 mW
Operating and Storage Temperature Range Tj:Tstg -55 to +150 °C
ELECTRICA L CH ARA CTERISTICS (at Tamb = 25°C unless otherwise stated).
PARAMETER SYMBOL MIN. MAX. UNIT CONDITIONS.
Drain-Source Breakdown
Voltage BVDSS -100 V ID=-1mA, VGS=0V
Gate-Source Threshold
Voltage VGS(th) -1.5 -3.5 V ID=-1mA, VDS= VGS
Gate-Body Leakage IGSS 20 nA VGS=± 20V, VDS=0V
Zero Gate Voltage Drain
Current IDSS -1
-100 µA
µAVDS=-100 V, VGS=0
VDS=-80 V, VGS=0V, T=125°C(2)
On-State Drain Current(1) ID(on) -750 mA VDS=-25 V, VGS=-10V
Static Drain-Source On-State
Resistance (1) RDS(on) 8ΩVGS=-10V,ID=-375mA
Forward Transconductance
(1)(2) gfs 125 mS VDS=-25V,ID=-375mA
Input Capacitance (2) Ciss 100 pF
Common So urce Output
Capacitance (2) Coss 35 pF VDS=-25V, VGS=0V, f=1MHz
Reverse Transfer
Capacitance (2) Crss 10 pF
Turn-On Delay Time (2)(3) td(on) 7ns
VDD
≈-25V, ID=-375mA
Rise Time (2)(3) tr15 ns
Turn-Off Delay Time (2)(3) td(off) 12 ns
Fall Time (2)(3) tf15 ns
(1) Measured under pulsed conditions. Width=300µs. Duty cycle ≤2%
(2) Sample test. (
3
)
3-424
G
D
S
ZVP2110A
P-CHANNEL ENHANCEMENT
MODE VERTICAL DMOS FET
ISSUE 2 – MARCH 94
FEATURES
* 100 Volt VDS
*R
DS(on)=8Ω
REFER TO ZVP2110A FOR GRAPHS
ABSOLUTE MAXIMUM RATINGS.
PARAMETER SYMBOL VALUE UNIT
Drain-Source Voltage VDS -100 V
Continuous Drain Current at Tamb=25°C ID-230 mA
Pulsed Drain Current IDM -3 A
Gate Source Voltage VGS ± 20 V
Power Dissip ation at T amb=25°C Ptot 700 mW
Operating and Storage Temperature Range Tj:Tstg -55 to +150 °C
ELECTRICAL CHARACTERISTICS (at Tamb = 25°C unless otherwise stated).
PARAMETER SYMBOL MIN. MAX. UNIT CONDITIONS.
Drain-Source Breakdown
Voltage BVDSS -100 V ID=-1mA , VGS=0V
Gate-Source Th reshold
Voltage VGS(th) -1.5 -3.5 V ID=-1mA, VDS= VGS
Gate-Body Le akage IGSS 20 nA VGS=± 20V, VDS=0V
Zero Gate Voltage Drain
Current IDSS -1
-100 µA
µAVDS=-100 V, VGS=0
VDS=-80 V, VGS=0V, T=125°C(2)
On-State Drain Current(1) ID(on) -750 mA VDS=-25 V, VGS=-10V
Static Drain-Source On-State
Resistance (1) RDS(on) 8ΩVGS=-10V,ID=-375mA
Forward Transcond uctance
(1)(2) gfs 125 mS VDS=-25V,ID=-375mA
Input Capacitance (2) Ciss 100 pF
Common Sour ce Output
Capacitance (2) Coss 35 pF VDS=-25V, VGS=0V, f=1MHz
Reverse Transfer
Capacitance (2) Crss 10 pF
Turn-On Delay Time (2 )(3) td(on) 7ns
VDD
≈-25V, ID=-375mA
Rise Time (2)(3) tr15 ns
Turn-Off Delay Time (2)(3) td(off) 12 ns
Fall Time (2)(3) tf15 ns
(1) Measured under pulsed conditions. Width=300µs. Duty cycle ≤2%
(2) Sample test.
E-Line
TO92 Compatible
ZVP2110C