P-CHANNEL ENHANCEMENT
MODE VERTICAL DMOS FET
ISSUE 2 – MARCH 94
FEATURES
* 100 Volt VDS
*R
DS(on)=8Ω
ABSOLUTE MAXIMUM RATINGS.
PARAMETER SYMBOL VALUE UNIT
Drain-Source Voltage VDS -100 V
Continuo us Drain Cur rent at Tamb=25°C ID-230 mA
Pulsed Drain Current IDM -3 A
Gate Source Voltage VGS ± 20 V
Power Dissipation at Tamb=25°C Ptot 700 mW
Operating and Storage Temperature Range Tj:Tstg -55 to +150 °C
ELECTRICA L CH ARA CTERISTICS (at Tamb = 25°C unless otherwise stated).
PARAMETER SYMBOL MIN. MAX. UNIT CONDITIONS.
Drain-Source Breakdown
Voltage BVDSS -100 V ID=-1mA, VGS=0V
Gate-Source Threshold
Voltage VGS(th) -1.5 -3.5 V ID=-1mA, VDS= VGS
Gate-Body Leakage IGSS 20 nA VGS=± 20V, VDS=0V
Zero Gate Voltage Drain
Current IDSS -1
-100 µA
µAVDS=-100 V, VGS=0
VDS=-80 V, VGS=0V, T=125°C(2)
On-State Drain Current(1) ID(on) -750 mA VDS=-25 V, VGS=-10V
Static Drain-Source On-State
Resistance (1) RDS(on) 8ΩVGS=-10V,ID=-375mA
Forward Transconductance
(1)(2) gfs 125 mS VDS=-25V,ID=-375mA
Input Capacitance (2) Ciss 100 pF
Common So urce Output
Capacitance (2) Coss 35 pF VDS=-25V, VGS=0V, f=1MHz
Reverse Transfer
Capacitance (2) Crss 10 pF
Turn-On Delay Time (2)(3) td(on) 7ns
VDD
≈-25V, ID=-375mA
Rise Time (2)(3) tr15 ns
Turn-Off Delay Time (2)(3) td(off) 12 ns
Fall Time (2)(3) tf15 ns
(1) Measured under pulsed conditions. Width=300µs. Duty cycle ≤2%
(2) Sample test. (
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E-Line
TO92 Compatible
3-421
D
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3-424
G
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ZVP2110A
P-CHANNEL ENHANCEMENT
MODE VERTICAL DMOS FET
ISSUE 2 – MARCH 94
FEATURES
* 100 Volt VDS
*R
DS(on)=8Ω
REFER TO ZVP2110A FOR GRAPHS
ABSOLUTE MAXIMUM RATINGS.
PARAMETER SYMBOL VALUE UNIT
Drain-Source Voltage VDS -100 V
Continuous Drain Current at Tamb=25°C ID-230 mA
Pulsed Drain Current IDM -3 A
Gate Source Voltage VGS ± 20 V
Power Dissip ation at T amb=25°C Ptot 700 mW
Operating and Storage Temperature Range Tj:Tstg -55 to +150 °C
ELECTRICAL CHARACTERISTICS (at Tamb = 25°C unless otherwise stated).
PARAMETER SYMBOL MIN. MAX. UNIT CONDITIONS.
Drain-Source Breakdown
Voltage BVDSS -100 V ID=-1mA , VGS=0V
Gate-Source Th reshold
Voltage VGS(th) -1.5 -3.5 V ID=-1mA, VDS= VGS
Gate-Body Le akage IGSS 20 nA VGS=± 20V, VDS=0V
Zero Gate Voltage Drain
Current IDSS -1
-100 µA
µAVDS=-100 V, VGS=0
VDS=-80 V, VGS=0V, T=125°C(2)
On-State Drain Current(1) ID(on) -750 mA VDS=-25 V, VGS=-10V
Static Drain-Source On-State
Resistance (1) RDS(on) 8ΩVGS=-10V,ID=-375mA
Forward Transcond uctance
(1)(2) gfs 125 mS VDS=-25V,ID=-375mA
Input Capacitance (2) Ciss 100 pF
Common Sour ce Output
Capacitance (2) Coss 35 pF VDS=-25V, VGS=0V, f=1MHz
Reverse Transfer
Capacitance (2) Crss 10 pF
Turn-On Delay Time (2 )(3) td(on) 7ns
VDD
≈-25V, ID=-375mA
Rise Time (2)(3) tr15 ns
Turn-Off Delay Time (2)(3) td(off) 12 ns
Fall Time (2)(3) tf15 ns
(1) Measured under pulsed conditions. Width=300µs. Duty cycle ≤2%
(2) Sample test.
E-Line
TO92 Compatible
ZVP2110C
TYP I CAL CHARACTERI STIC S
Output Characteristics
VDS - Drain Source Voltage (Volts)
I
D(On)
- Drain Current (Amps)
Transfer Characteristics
Normalised R
DS(on)
and V
GS(th)
vs Temperature
Normalised R
DS(on)
and V
GS(th)
-40 -20 0 20 40 60 80 120
100 140 160
Drain-Source Resistance R
DS(on)
Gate Threshold Voltage V
GS(th)
ID=-0.375A
0-2 -4-6-8-10
Saturation Characteristics
On-resistance v drain current
ID-Drain Current (mA)
0
0-2-4-6-8-10
VDS-Drain Source Voltage (Volts)
RDS(on)-Drain Source On Resistance (Ω)
Voltage Satura ti on Chara cteristics
VGS-Gate Source Voltage (Volts)
00-2-4-6-8-10
-5V -7V
-16V
-9V
I
D(On)
Drain Current (Amps)
VGS-Gate Source Voltage (Volts)
VGS=-10V
ID=-1mA
VGS=VDS
-1.4
-1.2
-1.0
-0.6
-0.2
-0.4
-0.8
-1.6
VDS=-10V
-6
-2
-4
-8
ID=
-0.5A
-0.25A
-0.1A
2.4
2.2
2.0
1.8
1.6
1.4
1.2
1.0
0.6
0.8
2.6
180°C
10
1
100
10 100 1000
VGS=-4V
-10V
-20V
-6V
-7V
-8V
-10V
-5V
-4.5V
-12V
VGS=
I
D(On)
- Drain Current (Amps)
VDS - Drain Source Voltage (Volts)
0 -10 -20 -30 -40 -50
0
-1.6
-1.4
-1.2
-0.8
-0.2
-0.4
-1.0
-16V
-8V
-5V
-4V
-0.6
-10V
-9V
-6V
VGS=
-20V
-7V
-12V
-4.5V
-4V
-3.5V
-1.6
-1.4
-1.2
-1.0
-0.8
-0.6
-0.2
0
-0.4
-20V
-4V
-3.5V
TYPICAL CHAR ACTERISTICS
T ransconductance v drain current
ID- Drain Current (Amps)
g
fs
-Transconductance (mS)
0 -0.2 -0.4 -0.6 -0.8 -1.0 -1.2 -1.4 -1.6
00.51.01.5
Q-Gate Charge (nC)
200
150
100
0
50
250
VDS=-10V
Transconductance v gate-source voltage
VGS-Gate Source Voltage (Volts)
g
fs
-Transconductance (mS)
200
150
100
0
50
250
0 -2 -4 -6 -8 -10
VDS=-10V
40
20
0
60
0 -20 -40 -60
VDS-Drain Source Voltage (Volts)
Capacitance v drain-source voltage
C-Capacitance (pF)
Ciss
Coss
Crss
V
GS
-Gate Source Voltage (Volts)
Gate charge v gate-source voltage
-6
-8
-10
-14
-16
-12
-4
-2
0
VDS=
-25V
ID=- 0.5A
-50V -100V
80
-80 -100 2.0 2.5 3.0
ZVP2110A
ZVP2110A
3-4233-422
TYP I CAL CHARACTERI STIC S
Output Characteristics
VDS - Drain Source Voltage (Volts)
I
D(On)
- Drain Current (Amps)
Transfer Characteristics
Normalised R
DS(on)
and V
GS(th)
vs Temperature
Normalised R
DS(on)
and V
GS(th)
-40 -20 0 20 40 60 80 120
100 140 160
Drain-Source Resistance R
DS(on)
Gate Threshold Voltage V
GS(th)
ID=-0.375A
0-2 -4-6-8-10
Saturation Characteristics
On-resistance v drain current
ID-Drain Current (mA)
0
0-2-4-6-8-10
VDS-Drain Source Voltage (Volts)
RDS(on)-Drain Source On Resistance (Ω)
Voltage Satura ti on Chara cteristics
VGS-Gate Source Voltage (Volts)
00-2-4-6-8-10
-5V -7V
-16V
-9V
I
D(On)
Drain Current (Amps)
VGS-Gate Source Voltage (Volts)
VGS=-10V
ID=-1mA
VGS=VDS
-1.4
-1.2
-1.0
-0.6
-0.2
-0.4
-0.8
-1.6
VDS=-10V
-6
-2
-4
-8
ID=
-0.5A
-0.25A
-0.1A
2.4
2.2
2.0
1.8
1.6
1.4
1.2
1.0
0.6
0.8
2.6
180°C
10
1
100
10 100 1000
VGS=-4V
-10V
-20V
-6V
-7V
-8V
-10V
-5V
-4.5V
-12V
VGS=
I
D(On)
- Drain Current (Amps)
VDS - Drain Source Voltage (Volts)
0 -10 -20 -30 -40 -50
0
-1.6
-1.4
-1.2
-0.8
-0.2
-0.4
-1.0
-16V
-8V
-5V
-4V
-0.6
-10V
-9V
-6V
VGS=
-20V
-7V
-12V
-4.5V
-4V
-3.5V
-1.6
-1.4
-1.2
-1.0
-0.8
-0.6
-0.2
0
-0.4
-20V
-4V
-3.5V
TYPICAL CHAR ACTERISTICS
T ransconductance v drain current
ID- Drain Current (Amps)
g
fs
-Transconductance (mS)
0 -0.2 -0.4 -0.6 -0.8 -1.0 -1.2 -1.4 -1.6
00.51.01.5
Q-Gate Charge (nC)
200
150
100
0
50
250
VDS=-10V
Transconductance v gate-source voltage
VGS-Gate Source Voltage (Volts)
g
fs
-Transconductance (mS)
200
150
100
0
50
250
0 -2 -4 -6 -8 -10
VDS=-10V
40
20
0
60
0 -20 -40 -60
VDS-Drain Source Voltage (Volts)
Capacitance v drain-source voltage
C-Capacitance (pF)
Ciss
Coss
Crss
V
GS
-Gate Source Voltage (Volts)
Gate charge v gate-source voltage
-6
-8
-10
-14
-16
-12
-4
-2
0
VDS=
-25V
ID=- 0.5A
-50V -100V
80
-80 -100 2.0 2.5 3.0
ZVP2110A
ZVP2110A
3-4233-422
