VS-16TTS..FPPbF Series, VS-16TTS...FP-M3 Series
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Revision: 10-Nov-11 1Document Number: 94381
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High Voltage Phase Control Thyristor, 16 A
FEATURES
• Designed and qualified for industrial level
• Fully isolated package (VINS = 2500 VRMS)
• UL E78996 approved
• Compliant to RoHS Directive 2002/95/EC
• 125 °C max. operating junction temperature
• Halogen-free according to IEC 61249-2-21
definition (-M3 only)
APPLICATIONS
• Typical usage is in input rectification crowbar (soft start)
and AC switch in motor control, UPS, welding, and battery
charge
DESCRIPTION
The VS-16TTS..FP... high voltage series of silicon controlled
rectifiers are specifically designed for medium power
switching and phase control applications. The glass
passivation technology used has reliable operation up to
125 °C junction temperature.
PRODUCT SUMMARY
Package TO-220FP
Diode variation Single SCR
IT(AV) 10 A
VDRM/VRRM 800 V, 1200 V
VTM 1.4 V
IGT 60 mA
TJ- 40 °C to 125 °C
(G) 3
2
(A)
1 (K)
TO-220AB FULL-PAK
OUTPUT CURRENT IN TYPICAL APPLICATIONS
APPLICATIONS SINGLE-PHASE BRIDGE THREE-PHASE BRIDGE UNITS
Capacitive input filter TA = 55 °C, TJ = 125 °C,
common heatsink of 1 °C/W 13.5 17 A
MAJOR RATINGS AND CHARACTERISTICS
PARAMETER TEST CONDITIONS VALUES UNITS
IT(AV) Sinusoidal waveform 10 A
IRMS 16
VDRM/VRRM 800/1200 V
ITSM 200 A
VT10 A, TJ = 25 °C 1.4 V
dV/dt 500 V/μs
dI/dt 150 A/μs
TJRange - 40 to 125 °C
VOLTAGE RATINGS
PART NUMBER
VRRM, MAXIMUM PEAK
REVERSE VOLTAGE
V
VDRM, MAXIMUM PEAK
DIRECT VOLTAGE
V
IRRM/IDRM
AT 125 °C
mA
VS-16TTS08FPPbF, VS-16TTS08FP-M3 800 800
10
VS-16TTS12FPPbF, VS-16TTS12FP-M3 1200 1200
VS-16TTS..FPPbF Series, VS-16TTS...FP-M3 Series
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Revision: 10-Nov-11 2Document Number: 94381
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ABSOLUTE MAXIMUM RATINGS
PARAMETER SYMBOL TEST CONDITIONS
VALUES
UNITS
TYP. MAX.
Maximum average on-state current IT(AV) TC = 95 °C, 180° conduction, half sine wave 10
A
Maximum RMS on-state current IRMS 16
Maximum peak, one-cycle,
non-repetitive surge current ITSM
10 ms sine pulse, rated VRRM applied 170
10 ms sine pulse, no voltage reapplied 200
Maximum I2t for fusing I2t10 ms sine pulse, rated VRRM applied 144 A2s
10 ms sine pulse, no voltage reapplied 200
Maximum I2t for fusing I2tt = 0.1 to 10 ms, no voltage reapplied 2000 A2s
Maximum on-state voltage drop VTM 10 A, TJ = 25 °C 1.4 V
On-state slope resistance rtTJ = 125 °C 24.0 m
Threshold voltage VT(TO) 1.1 V
Maximum reverse and direct leakage current IRM/IDM
TJ = 25 °C VR = Rated VRRM/VDRM
0.5
mA
TJ = 125 °C 10
Holding current IHAnode supply = 6 V, resistive load, initial IT = 1 A
16TTS08FP, 16TTS12FP - 100
Maximum latching current ILAnode supply = 6 V, resistive load 200
Maximum rate of rise of off-state voltage dV/dt 500 V/μs
Maximum rate of rise of turned-on current dI/dt 150 A/μs
TRIGGERING
PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS
Maximum peak gate power PGM 8.0 W
Maximum average gate power PG(AV) 2.0
Maximum peak positive gate current + IGM 1.5 A
Maximum peak negative gate voltage - VGM 10 V
Maximum required DC gate current to trigger IGT
Anode supply = 6 V, resistive load, TJ = - 10 °C 90
mA
Anode supply = 6 V, resistive load, TJ = 25 °C 60
Anode supply = 6 V, resistive load, TJ = 125 °C 35
Maximum required DC gate
voltage to trigger VGT
Anode supply = 6 V, resistive load, TJ = - 10 °C 3.0
V
Anode supply = 6 V, resistive load, TJ = 25 °C 2.0
Anode supply = 6 V, resistive load, TJ = 125 °C 1.0
Maximum DC gate voltage not to trigger VGD TJ = 125 °C, VDRM = Rated value 0.2
Maximum DC gate current not to trigger IGD 2.0 mA
SWITCHING
PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS
Typical turn-on time tgt TJ = 25 °C 0.9
μsTypical reverse recovery time trr TJ = 125 °C 4
Typical turn-off time tq110
VS-16TTS..FPPbF Series, VS-16TTS...FP-M3 Series
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Revision: 10-Nov-11 3Document Number: 94381
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THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
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Fig. 1 - Current Rating Characteristics
Fig. 2 - Current Rating Characteristics
Fig. 3 - On-State Power Loss Characteristics
Fig. 4 - On-State Power Loss Characteristics
THERMAL AND MECHANICAL SPECIFICATIONS
PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS
Maximum junction and storage
temperature range TJ, TStg - 40 to 125 °C
Maximum thermal resistance,
junction to case RthJC DC operation 1.5
°C/W
Maximum thermal resistance,
junction to ambient RthJA 62
Typical thermal resistance,
case to heatsink RthCS Mounting surface, smooth and greased 1.5
Approximate weight 2g
0.07 oz.
Mounting torque minimum 6 (5) kgf · cm
(lbf · in)
maximum 12 (10)
Marking device Case style TO-220AB FULL-PAK (94/V0) 16TTS08FP
16TTS12FP
80
90
100
110
120
130
024681012
30°
60°
90°
120°
180°
Maximum Allowable Case Temperature (°C)
Conduction Angle
Average On-state Current (A)
16TTS..FP Series
R (DC) = 1.5 °C/W
thJC
80
90
100
110
120
130
0 2 4 6 8 10 12 14 16 18
DC
30° 60°
90°
120°
180°
Average On-state Current (A)
Maximum Allowable Case Temperature (°C)
Conduction Period
16TTS..FP Series
R (DC) = 1.5 °C/ W
thJC
0
2
4
6
8
10
12
14
16
18
0 2 4 6 8 10 12
RM S Li m it
Conduction Angle
Maximum Average On-state Power Loss (W)
Average On-state Current (A)
180°
120°
90°
60°
30°
16TTS..FP Se ries
T = 1 25 ° C
J
0
5
10
15
20
25
0481216
DC
180°
120°
90°
60°
30°
RM S Li m it
Conduction Period
Maximum Average On-state Power Loss (W)
Average On-state Current (A)
1 6 TTS. . FP Se r i e s
T = 1 2 5 ° C
J
VS-16TTS..FPPbF Series, VS-16TTS...FP-M3 Series
www.vishay.com Vishay Semiconductors
Revision: 10-Nov-11 4Document Number: 94381
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THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Fig. 5 - Maximum Non-Repetitive Surge Current Fig. 6 - Maximum Non-Repetitive Surge Current
Fig. 7 - On-State Voltage Drop Characteristics
Fig. 8 - Thermal Impedance ZthJC Characteristics
80
100
120
140
160
180
110100
Number Of Equal Amplitude Half Cycle Current Pulses (N)
At Any Rated Load Condition And With
Rated V Applied Following Surge.
Init ia l T = 125°C
@ 60 Hz 0.0083 s
@ 50 Hz 0.0100 s
RRM
J
Peak Half Sine Wave On-state Current (A)
16TTS..FP Series
80
100
120
140
160
180
200
0.01 0.1 1
Pulse Tra in Du r a t io n ( s)
Maximum Non Repetitive Surge Current
Pea k Ha lf Sine Wave Forward Current (A)
Versus Pulse Train Duration.
Init ia l T = 125°C
No Voltage Reapplied
Rated V Reapplied
J
RRM
16TTS..FP Serie s
1
10
100
1000
012345
T = 2 5 ° C
J
Insta nt a neo us On-stat e Curre nt (A)
In st a n t a n e o u s O n -st a t e V o lt a g e ( V )
T = 1 2 5 ° C
J
1 6 TTS. . FP Se r ie s
0.01
0.1
1
10
0.0001 0.001 0.01 0.1 1 10
Sq u a r e Wa v e Pu l se D u r a t i o n ( s)
Steady State Value
(DC Operation)
Sing le Pulse
thJC
Transient Thermal Impedance Z (°C/W)
1 6 TTS. . FP Se r i e s
D = 0.50
D = 0.33
D = 0.25
D = 0.17
D = 0.08
VS-16TTS..FPPbF Series, VS-16TTS...FP-M3 Series
www.vishay.com Vishay Semiconductors
Revision: 10-Nov-11 5Document Number: 94381
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THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
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Fig. 9 - Gate Characteristics
ORDERING INFORMATION TABLE
ORDERING INFORMATION (Example)
PREFERRED P/N QUANTITY PER T/R MINIMUM ORDER QUANTITY PACKAGING DESCRIPTION
VS-16TTS08FPPbF 50 1000 Antistatic plastic tubes
VS-16TTS08FP-M3 50 1000 Antistatic plastic tubes
VS-16TTS12FPPbF 50 1000 Antistatic plastic tubes
VS-16TTS12FP-M3 50 1000 Antistatic plastic tubes
LINKS TO RELATED DOCUMENTS
Dimensions www.vishay.com/doc?95072
Part marking information TO-220FP PbF www.vishay.com/doc?95069
TO-220FP -M3 www.vishay.com/doc?95456
0.1
1
10
100
0.001 0.01 0.1 1 10 100
(b)
(a)
Rectangular gate pulse
(4) (3) (2) (1)
In st a n t a n e o u s G a t e C u r r e n t ( A )
In st a n t a n e o u s G a t e V o l t a g e ( V)
TJ = 25 °C
TJ = 1 2 5 ° C
b)Recommended load line for
VGD
IGD
Fre q u e n c y Li m it e d b y PG ( A V )
a)Recommended load line for
rated di/dt: 10 V, 20 ohms
tr = 0.5 µs, tp >= 6 µs
<= 30% rated di/dt: 10 V, 65 ohms
t r = 1 µs, t p >= 6 µs
(1) PGM = 40 , tp = 1 ms
(2) PGM = 20 W, tp = 2 ms
(3) PGM = 8 W, tp = 5 ms
(4) PGM = 4 W, tp = 10 ms
T
J = -1 0 °C
1 6 TTS. . FP Se r i e s
2- Current rating, RMS value
3- Circuit configuration:
4- Package:
5
6- Voltage code x 100 = VRRM
T = Single thyristor
- Type of silicon:
T = TO-220AB
S = Converter grade
8-
08 = 800 V
12 = 1200 V
7- FULL-PAK
Device code
62 43 5 7 8
16 T T S 12 FP PbF
VS-
1
1-Vishay Semiconductors product
Environmental digit:
PbF = Lead (Pb)-free and RoHS compliant
-M3 = Halogen-free, RoHS compliant, and terminations lead (Pb)-free
Outline Dimensions
www.vishay.com Vishay Semiconductors
Revision: 20-Jul-11 1Document Number: 95072
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DIMENSIONS in millimeters
5° ± 0.5° 5° ± 0.5°
0.9
0.7 1.15
1.05
2.54 TYP.
2.54 TYP.
2.8
2.6
1.4
1.3
TYP.
10°
16.4
15.4
16.0
15.8
13.56
13.05
0.61
0.38
2.85
2.65
3.7
3.2
4.8
4.6
3.3
3.1
7.31
6.91
10.6
10.4
Hole Ø 3.4
3.1
(2 places)
R 0.7
R 0.5 Lead assignments
Diodes
1. - Anode/open
2. - Cathode
3. - Anode
Conforms to JEDEC outline TO-220 FULL-PAK
Legal Disclaimer Notice
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Revision: 12-Mar-12 1Document Number: 91000
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