Microsemi RGFIA 9261 Owensmouth Ave. Chatsworth, Ca 91311 T H R U Phone: (818) 701-4933 Fax: (818) 701-4939 RGF1 M Features Sintered Glass e Low Current Leakage Metallurgical Bonded Construction Glass Passivation Cavity Free Junction Capable Of Meeting MIL-S-19500 Enivronmental Standards Fast Recovery Times For High Efficiency 1 Amp Fast Recovery Silicon Rectifier 50 to 1000 Volts Maxmum Ratngs DO-214AA e Operating Temperature: -65C to +175C Storage Temperature: -65C to +150C (SM BJ) e Maximum Thermal Resistance; 15C/W Junction To Ambient H Cathode Band Microsemi Device Maximum Maximum | Maximum Part Marking Recurrent RMS DC Number Peak Reverse Voltage Blocking Voltage Voltage RGF1IA RGF1IA 50V 35V 50V RGF1B RGF1B 100V 70V 100V { RGF1D RGF1D 200V 140V 200V A 6 RGF1iG RGF1iG 400V 280V 400V 4 a5 RGFiJ | RGFtJ 600V 420V 600V _ He ft J Lt RGFiK | RGF1K 800V 560V 800V F RGF1M RGF1M 1000V 700V 1000V EkectricalCharacteristics @ 25C Unkss Otherw ise Specified Average Forward Irv) 1.0A T, = 120C current Peak Forward Surge les 30A 8.3ms, half sine Current Maximum lem = 1.0A; Instantaneous Ve 1.30V | T, = 25C Forward Voltage Maximum DG SUGGESTED SOLDER PAD | AYOLIT Reverse Current At lp 5uA Ty = 25C 0.080" ~ Rated DC Blocking 100uA | Ty = 125C Voltage Maximum Reverse | Recovery Time Ty RGF1A-G Tr 150ns |-=0.5A, In=1.0A, RGF1J 250ns ,.=0.25A RGF1K-M 500ns 0.070" Typical Junction Cy 50pF Measured at Capacitance al 1.0MHz, Va=4.0V Pease eet Parse wy 924- faueo MSC0869.PDF OERSEE, Bary ye te b Colorado: oe 469-2161 M Watertown: (617) 926-0404 M Chatsworth: (818) 701-4933 rel ise ) Bombay: ( ) 22-832-002 MM Hong Kong: (852) 2692-1202 Amps RGF1A thru RGF1M Figure 1 Typical Forward Characteristics 20 10 6 .06 .04 .02 .01 6 8 10 1.2 Volts Instantaneous Forward Current - Amperes versus Instantaneous Forward Voltage - Volts Figure 3 Junction Capacitance 100 60 40 pF YN Fw so = A mPs 4. Figure 2 Forward Derating Curve 2.4 2.2 2.0 1.8 1.6 1.4 1.2 0 Om FD 25 50 75 100. = 125 150 175 C Average Forward Rectified Current - Amperes versus 40 100 200 400 1000 Junction Capacitance - pF versus Reverse Voltage - Volts M Santa Ana: (714) 979-8220 M Scottsdale: (602) 941-6300 M Colorado: (303) 469-2161 MM Watertown: (617) 926-0404 M Chatsworth: (818) 701-4933 M Sertech Labs: (617) 924-9280 M1 Ireland: (353) 65-40044 M Bombay: (91) 22-832-002 MM Hong Kong: (852) 2692-1202 MSC0869.PDF RGF1A thru RGF iM Figure 4 Peak Forward Surge Current 36 30 NI 24 S N 18 SJ > Amps 42 A Db hh 6 | ) 1 2 4 6 810 20 40 60 80100 Cycles Peak Forward Surge Current - Amperes versus Number Of Cycles At 60Hz - Cycles Figure 6 Cavity Free Glass Brazed Temp >600C UL Recognized Passivated Junctio! Flame-Retardent Process Molding Compound Completely Solder Brazing, Low Encapsulated Brazed Opaque Resistance, Excellent Surge Danatriintian Sintered Glass Process Figure 7 Reverse Recovery Time Characteristic And Test Circuit Diagram 50Q 102 +0.5A ) ed Pulse -0.25 25Vde Generator Note 2 12 Oscilloscope -1.0 Note 1 tem Notes: 1. Rise Time = 7ns max. Input impedance = 1 megohm, 22pF 2. Rise Time = 10ns max. Source impedance = 50 ohms 3. Resistors are non-inductive Set Time Base for 20/100ns/cm M Santa Ana: (714) 979-8220 M Scottsdale: (602) 941-6300 M Colorado: (303) 469-2161 M Sertech Labs: (617) 924-9280 M1 Ireland: (353) 65-40044 M Bombay: (91) 22-832-002 MSC0869.PDF M Watertown: (617) 926-0404 M Chatsworth: (818) 701-4933 M Hong Kong: (852) 2692-1202