SiT8209 Ultra-Performance Oscillator Features Applications Any frequency between 80.000001 and 220 MHz accurate to 6 decimal places 100% pin-to-pin drop-in replacement to quartz-based oscillators Ultra-low phase jitter: 0.5 ps (12 kHz to 20 MHz) Frequency stability as low as 10 PPM Industrial or extended commercial temperature range LVCMOS/LVTTL compatible output Standard 4-pin packages: 2.5 x 2.0, 3.2 x 2.5, 5.0 x 3.2, 7.0 x 5.0 mm x mm Outstanding silicon reliability of 2 FIT or 500 million hour MTBF Pb-free, RoHS and REACH compliant Ultra-short lead time SATA, SAS, Ethernet, 10-Gigabit Ethernet, SONET, PCI Express, video, Wireless Computing, storage, networking, telecom, industrial control [1] Table 1. Electrical Characteristics Parameter Output Frequency Range Frequency Stability Operating Temperature Range Supply Voltage Current Consumption Symbol Min. Typ. Max. Unit f 80.000001 - 220 MHz F_stab T_use Vdd Idd Condition -10 - +10 PPM -20 - +20 PPM -25 - +25 PPM -50 - +50 PPM -20 - +70 C Extended Commercial -40 - +85 C Industrial Supply voltages between 2.5V and 3.3V can be supported. Contact SiTime for guaranteed performance specs for supply voltages not specified in this table. Inclusive of Initial tolerance at 25 C, and variations over operating temperature, rated power supply voltage and load 1.71 1.8 1.89 V 2.25 2.5 2.75 V 2.52 2.8 3.08 V 2.97 3.3 3.63 V - 34 36 mA No load condition, f = 100 MHz, Vdd = 2.5V, 2.8V or 3.3V - 30 33 mA No load condition, f = 100 MHz, Vdd = 1.8V - - 31 mA Vdd = 2.5V, 2.8V or 3.3V, OE = GND, output is Weakly Pulled Down OE Disable Current I_OD - - 30 mA Vdd = 1.8 V. OE = GND, output is Weakly Pulled Down Standby Current I_std - - 70 A Vdd = 2.5V, 2.8V or 3.3V, ST = GND, output is Weakly Pulled Down - - 10 A Vdd = 1.8 V. ST = GND, output is Weakly Pulled Down DC 45 - 55 % f <= 165 MHz, all Vdds. 40 - 60 % f > 165 MHz, all Vdds. Duty Cycle Rise/Fall Time Tr, Tf - 1.2 2 ns Output Voltage High VOH 90% - - Vdd Output Voltage Low VOL - - 10% Vdd Input Voltage High VIH 70% - - Vdd Pin 1, OE or ST Input Voltage Low VIL - - 30% Vdd Pin 1, OE or ST Input Pull-up Impedance Z_in - 100 250 k Pin 1, OE logic high or logic low, or ST logic high 2 - - M Pin 1, ST logic low - 7 10 ms Measured from the time Vdd reaches its rated minimum value Startup Time OE Enable/Disable Time Resume Time RMS Period Jitter RMS Phase Jitter (random) First year Aging 10-year Aging T_start 15 pF load, 10% - 90% Vdd IOH = -6 mA, IOL = 6 mA, (Vdd = 3.3V, 2.8V, 2.5V) IOH = -3 mA, IOL = 3 mA, (Vdd = 1.8V) T_oe - - 115 ns f = 80 MHz, For other frequencies, T_oe = 100 ns + 3 cycles T_resume - - 10 ms In standby mode, measured from the time ST pin crosses 50% threshold. Refer to Figure 5. f = 156.25 MHz, Vdd = 2.5V, 2.8V or 3.3V T_jitt - 1.5 2 ps - 2 3 ps f = 156.25 MHz, Vdd = 1.8V T_phj - 0.5 1 ps f = 156.25 MHz, Integration bandwidth = 12 kHz to 20 MHz F_aging -1.5 - +1.5 PPM 25C -5 - +5 PPM 25C Note: 1. All electrical specifications in the above table are specified with 15 pF output load and for all Vdd(s) unless otherwise stated. Rev 1.1 January 2, 2017 www.sitime.com SiT8209 Ultra-Performance Oscillator Table 2. Pin Configuration Pin 1 Symbol Top View Functionality [2] Output Enable H or Open : specified frequency output L: output is high impedance. Only output driver is disabled. Standby H or Open : specified frequency output L: output is low (weak pull down). Device goes to sleep mode. Supply current reduces to I_std. OE/ST 1 4 VDD GND 2 3 OUT [2] OE/ ST [3] 2 GND Power Electrical ground 3 OUT Output Oscillator output 4 VDD Power Power supply voltage [3] Figure 1. Pin Assignments Notes: 2. A pull-up resistor of <10 k between OE/ ST pin and Vdd is recommended in high noise environment. 3. A capacitor of value 0.1 F between Vdd and GND is recommended. Table 3. Absolute Maximum Attempted operation outside the absolute maximum ratings of the part may cause permanent damage to the part. Actual performance of the IC is only guaranteed within the operational specifications, not at absolute maximum ratings. Min. Max. Unit Storage Temperature Parameter -65 150 C VDD -0.5 4 V Electrostatic Discharge - 2000 V Soldering Temperature (follow standard Pb free soldering guidelines) - 260 C Junction Temperature - 150 C Table 4. Thermal Consideration Package JA, 4 Layer Board (C/W) JA, 2 Layer Board (C/W) JC, Bottom (C/W) 7050 191 263 5032 97 199 24 3225 109 212 27 2520 117 222 26 30 Table 5. Environmental Compliance Parameter Condition/Test Method Mechanical Shock MIL-STD-883F, Method 2002 Mechanical Vibration MIL-STD-883F, Method 2007 Temperature Cycle JESD22, Method A104 Solderability MIL-STD-883F, Method 2003 Moisture Sensitivity Level MSL1 @ 260C Rev. 1.1 Page 2 of 15 www.sitime.com SiT8209 Ultra-Performance Oscillator Phase Noise Plot -40 -60 Phase noise (dBc/Hz) Integrated random phase jitter (12kHz to 20MHz): 0.49 ps,RMS -80 -100 -120 -140 -160 3 4 10 5 10 10 6 7 10 10 Frequency offset (Hz) Figure 2. Phase Noise, 156.25 MHz, 3.3V, LVCMOS Output Test Circuit and Waveform[4] Vdd Vout 4 3 Test Point tr tf 90% Vdd Power Supply 0.1F 1 2 15pF (including probe and fixture capacitance) 50% 10% Vdd High Pulse (TH) Low Pulse (TL) OE/ST Function Period Vdd 1k Figure 3. Test Circuit Figure 4. Waveform Notes: 4. Duty Cycle is computed as Duty Cycle = TH/Period. 5. SiT8209 supports the configurable duty cycle feature. For custom duty cycle at any given frequency, contact SiTime. Rev. 1.1 Page 3 of 15 www.sitime.com SiT8209 Ultra-Performance Oscillator Timing Diagram Figure 5. Startup Timing (OE/ST Mode) Figure 6. Standby Resume Timing (ST Mode Only) Figure 7. OE Disable Timing (OE Mode Only) Figure 6. OE Enable Timing (OE Mode Only) Notes: 6. SiT8209 supports NO RUNT pulses and No glitches during startup or resume. 7. SiT8209 supports gated output which is accurate within rated frequency stability from the first cycle. Rev. 1.1 Page 4 of 15 www.sitime.com SiT8209 Ultra-Performance Oscillator Performance Plots[8] 3.3V 2.5V 3.3V 1.8V 38.0 1.8V RMS Period jitter, ps 2.50 36.0 34.0 Idd, mA 2.5V 3.00 40.0 32.0 30.0 28.0 26.0 24.0 2.00 1.50 1.00 0.50 22.0 20.0 80 100 120 140 160 180 200 0.00 80 220 100 120 Figure 8. Idd vs Frequency 2.5V 2.5V 1.8V 60.0 1 58.0 0.9 56.0 0.8 54.0 52.0 50.0 48.0 46.0 44.0 42.0 40.0 80 160 180 200 220 Figure 9. RMS Period Jitter vs Frequency RMS Phase jitter, ps Duty cycle, % 3.3V 140 Frequency, MHz Frequency, MHz 3.3V 1.8V 0.7 0.6 0.5 0.4 0.3 0.2 0.1 100 120 140 160 180 200 0 220 80 100 Figure 10. Duty Cycle vs Frequency 1.8V 2.5V 120 140 160 180 200 220 Frequency, MHz Frequency, MHz Figure 11. RMS Phase Jitter vs Frequency 1.8V (10%-90%) 1.8V (20%-80%) 3.3V 35 2.5V (10%-90%) 2.5V (20%-80%) 3.3V (10%-90%) 3.3V (20%-80%) 2.0 33 Rise Time, ns Idd, mA 1.5 31 29 27 25 -40 -20 0 20 40 60 0.5 0.0 -40 80 Temperature, C Figure 12. Idd vs Temperature, 100 MHz Output 1.0 -20 0 20 40 60 80 Temperature, C Figure 13. Rise Time vs Temperature, 100 MHz Output Note: 8. All plots are measured with 15pF load at room temperature, unless otherwise stated. Rev. 1.1 Page 5 of 15 www.sitime.com SiT8209 Ultra-Performance Oscillator One can choose to speed up the rise/fall time to 1.41ns by then increasing the drive strength setting on the SiT8209. Programmable Drive Strength The SiT8209 includes a programmable drive strength feature to provide a simple, flexible tool to optimize the clock rise/fall time for specific applications. Benefits from the programmable drive strength feature are: Improves system radiated electromagnetic interference (EMI) by slowing down the clock rise/fall time Improves the downstream clock receiver's (RX) jitter by decreasing (speeding up) the clock rise/fall time. Ability to drive large capacitive loads while maintaining full swing with sharp edge rates. For more detailed information about rise/fall time control and drive strength selection, see the SiTime Applications Note section: http://www.sitime.com/support/application-notes. The SiT8209 can support up to 60 pF or higher in maximum capacitive loads with up to 3 additional drive strength settings. Refer to the Rise/Tall Time Tables to determine the proper drive strength for the desired combination of output load vs. rise/fall time SiT8209 Drive Strength Selection Tables 6 through 9 define the rise/fall time for a given capacitive load and supply voltage.Select the table that matches the SiT8208 nominal supply voltage (1.8V, 2.5V, 2.8V, 3.0V, 3.3V). EMI Reduction by Slowing Rise/Fall Time Figure 14 shows the harmonic power reduction as the rise/fall times are increased (slowed down). The rise/fall times are expressed as a ratio of the clock period. For the ratio of 0.05, the signal is very close to a square wave. For the ratio of 0.45, the rise/fall times are very close to near-triangular waveform. These results, for example, show that the 11th clock harmonic can be reduced by 35 dB if the rise/fall edge is increased from 5% of the period to 45% of the period. 1. Select the table that matches the SiT8209 nominal supply voltage (1.8V, 2.5V, 2.8V, 3.0V, 3.3V). 2. Select the capacitive load column that matches the application requirement (5 pF to 60 pF) 3. Under the capacitive load column, select the desired rise/fall times. 4. The left-most column represents the part number code for the corresponding drive strength. 5. Add the drive strength code to the part number for ordering purposes. Calculating Maximum Frequency Based on the rise and fall time data given in Tables 6 through 9, the maximum frequency the oscillator can operate with guaranteed full swing of the output voltage over temperature as follows: Max Frequency = 1 6 x (Trise) Example 1 Figure 15. Harmonic EMI reduction as a Function of Slower Rise/Fall Time Calculate fMAX for the following condition: Vdd = 1.8V (Table 6) Capacitive Load: 30 pF Typical Tr/f time = 5 ns (rise/fall time part number code = G) Jitter Reduction with Faster Rise/Fall Time Power supply noise can be a source of jitter for the downstream chipset. One way to reduce this jitter is to increase rise/fall time (edge rate) of the input clock. Some chipsets would require faster rise/fall time in order to reduce their sensitivity to this type of jitter. The SiT8209 provides up to 3 additional high drive strength settings for very fast rise/fall time. Refer to the Rise/Fall Time Tables to determine the proper drive strength. Part number for the above example: High Output Load Capability Drive strength code is inserted here. Default setting is "-" SiT8209AIGG2-18E-55.500000 The rise/fall time of the input clock varies as a function of the actual capacitive load the clock drives. At any given drive strength, the rise/fall time becomes slower as the output load increases. As an example, for a 3.3V SiT8209 device with default drive strength setting, the typical rise/fall time is 1.15ns for 15 pF output load. The typical rise/fall time slows down to 2.72ns when the output load increases to 45 pF. Rev. 1.1 Page 6 of 15 www.sitime.com SiT8209 Ultra-Performance Oscillator Rise/Fall Time (10% to 90%) vs CLOAD Tables Table 6. Vdd = 1.8V Rise/Fall Times for Specific CLOAD Table 7. Vdd = 2.5V Rise/Fall Times for Specific CLOAD Rise/Fall Time Typ (ns) Rise/Fall Time Typ (ns) Drive Strength \ CLOAD 5 pF 15 pF 30 pF 45 pF 60 pF Drive Strength \ CLOAD 5 pF 15 pF 30 pF 45 pF 60 pF L 12.45 17.68 19.48 46.21 57.82 L 8.68 13.59 18.36 32.70 42.06 A 6.50 10.27 16.21 23.92 30.73 A 4.42 7.18 11.93 16.60 21.38 R 4.38 7.05 11.61 16.17 20.83 R 2.93 4.78 8.15 11.19 14.59 B 3.27 5.30 8.89 12.18 15.75 B 2.21 3.57 6.19 8.55 11.04 S 2.62 4.25 7.20 9.81 12.65 S 1.67 2.87 4.94 6.85 8.80 D 2.19 3.52 6.00 8.31 10.59 D 1.50 2.33 4.11 5.68 7.33 T 1.76 3.01 5.14 7.10 9.15 T 1.06 2.04 3.50 4.84 6.26 5.51 E 1.59 2.59 4.49 6.25 7.98 E 0.98 1.69 3.03 4.20 U 1.49 2.28 3.96 5.55 7.15 U 0.93 1.48 2.69 3.73 4.92 F 1.22 2.10 3.57 5.00 6.46 F 0.90 1.37 2.44 3.34 4.42 W 1.07 1.88 3.23 4.50 5.87 W 0.87 1.29 2.21 3.04 4.02 G 1.01 1.64 2.95 4.12 5.40 G or "-": Default 0.67 1.20 2.00 2.79 3.69 3.43 X 0.96 1.50 2.74 3.80 4.98 X 0.44 1.10 1.86 2.56 K 0.92 1.41 2.56 3.52 4.64 K 0.38 0.99 1.76 2.37 3.18 Y 0.88 1.34 2.39 3.25 4.32 Y 0.36 0.83 1.66 2.20 2.98 2.80 Q 0.86 1.29 2.24 3.04 4.06 Q 0.34 0.71 1.58 2.07 Z or "-": Default 0.82 1.24 2.07 2.89 3.82 Z 0.33 0.65 1.51 1.95 2.65 M 0.77 1.20 1.94 2.72 3.61 M 0.32 0.62 1.44 1.85 2.50 N 0.66 1.15 1.84 2.58 3.41 N 0.31 0.59 1.37 1.77 2.39 P 0.51 1.09 1.76 2.45 3.24 P 0.30 0.57 1.29 1.70 2.28 Table 8. Vdd = 2.8V Rise/Fall Times for Specific CLOAD Table 9. Vdd = 3.3V Rise/Fall Times for Specific CLOAD Rise/Fall Time Typ (ns) Rise/Fall Time Typ (ns) Drive Strength \ CLOAD 5 pF 15 pF 30 pF 45 pF 60 pF Drive Strength \ CLOAD 5 pF 15 pF 30 pF 45 pF 60 pF L 7.93 12.69 17.94 30.10 38.89 L 7.18 11.59 17.24 27.57 35.57 A 4.06 6.66 11.04 15.31 19.80 A 3.61 6.02 10.19 13.98 18.10 R 2.68 4.40 7.53 10.29 13.37 R 2.31 3.95 6.88 9.42 12.24 B 2.00 3.25 5.66 7.84 10.11 B 1.65 2.92 5.12 7.10 9.17 S 1.59 2.57 4.54 6.27 8.07 S 1.43 2.26 4.09 5.66 7.34 D 1.19 2.14 3.76 5.21 6.72 D 1.01 1.91 3.38 4.69 6.14 T 1.00 1.79 3.20 4.43 5.77 T 0.94 1.51 2.86 3.97 5.25 E 0.94 1.51 2.78 3.84 5.06 E 0.90 1.36 2.50 3.46 4.58 U 0.90 1.38 2.48 3.40 4.50 U 0.86 1.25 2.21 3.03 4.07 F 0.87 1.29 2.21 3.03 4.05 F or "-": Default 0.48 1.15 1.95 2.72 3.65 W 0.62 1.19 1.99 2.76 3.68 W 0.38 1.04 1.77 2.47 3.31 G or "-": Default 0.41 1.08 1.84 2.52 3.36 G 0.36 0.87 1.66 2.23 3.03 X 0.37 0.96 1.72 2.33 3.15 X 0.34 0.70 1.56 2.04 2.80 K 0.35 0.78 1.63 2.15 2.92 K 0.33 0.63 1.48 1.89 2.61 Y 0.33 0.67 1.54 2.00 2.75 Y 0.32 0.60 1.40 1.79 2.43 2.28 Rev. 1.1 Q 0.32 0.63 1.46 1.89 2.57 Q 0.32 0.58 1.31 1.69 Z 0.31 0.60 1.39 1.80 2.43 Z 0.30 0.56 1.22 1.62 2.17 M 0.30 0.57 1.31 1.72 2.30 M 0.30 0.55 1.12 1.54 2.07 N 0.30 0.56 1.22 1.63 2.22 N 0.30 0.54 1.02 1.47 1.97 P 0.29 0.54 1.13 1.55 2.13 P 0.29 0.52 0.95 1.41 1.90 Page 7 of 15 www.sitime.com SiT8209 Ultra-Performance Oscillator For more information regarding SiTime's field programmable solutions, visit http://www.sitime.com/time-machine and http://www.sitime.com/fp-devices. Instant Samples with Time Machine and Field Programmable Oscillators SiTime supports a field programmable version of the SiT8209 low power oscillator for fast prototyping and real time custom- ization of features. The field programmable devices (FP devices) are available for all five standard SiT8209 package sizes and can be configured to one's exact specification using the Time Machine II, an USB powered MEMS oscillator programmer. SiT8209 is typically factory-programmed per customer ordering codes for volume delivery. Customizable Features of the SiT8209 FP Devices Include Any frequency between 1 - 110 MHz Three frequency stability options, 20 PPM, 25 PPM, 50 PPM Two operating temperatures, -20 to 70C or -40 to 85C Five supply voltage options, 1.8V, 2.5V, 2.8V, 3.0V, and 3.3V Output drive strength Rev. 1.1 Page 8 of 15 www.sitime.com SiT8209 Ultra-Performance Oscillator Dimensions and Patterns Package Size - Dimensions (Unit: mm) [9] Recommended Land Pattern (Unit: mm) [10] 2.7 x 2.4 x 0.75 mm (100% compatible with 2.5 x 2. 0 mm footprint) 1.9 1.0 1.5 1.25 YXXXX 0.50 1.00 2.4 0.05 2.7 0.05 0.85 . 0.75 0.05 1.1 3.2 x 2.5 x 0.75 mm 2.2 2.1 3.2 0.05 #3 #3 1.9 #2 #2 1.2 #1 0.9 0.75 0.05 #1 0.7 YXXXX #4 0.9 2.5 0.05 #4 1.4 5.0 x 3.2 x 0.75 mm 2.54 5.0 0.05 #3 #2 #2 #1 2.2 1.6 #1 #4 1.1 YXXXX #3 0.8 3.2 0.05 #4 2.39 1.15 1.5 0.75 0.05 7.0 x 5.0 x 0.90 mm 5.08 7.0 0.05 3.81 2.6 0.90 0.10 2.0 1.1 YXXXX 5.0 0.05 5.08 Notes: 9. 10. Rev. 1.1 1.4 2.2 Top marking: Y denotes manufacturing origin and XXXX denotes manufacturing lot number. The value of "Y" will depend on the assembly location of the device. A capacitor of value 0.1 F between Vdd and GND is required. Page 9 of 15 www.sitime.com SiT8209 Ultra-Performance Oscillator Ordering Information The Part No. Guide is for reference only. To customize and build an exact part number, use the SiTime Part Number Generator. SiT8209AC-23-25E - 156.123456 T Packaging "T": Tape & Reel, 3K reel "Y": Tape & Reel, 1K reel Blank for Bulk Part Family "SiT8209" Revision Letter "A" is the silicon revision Frequency 80.000001 to 220.000000 MHz Temperature Range Feature Pin "E" for Output Enable "C" Ext. Commercial, -20 to 70C "I" Industrial, -40 to 85C "S" for Standby Voltage Supply Output Drive Strength "18" for 1.8V 5% "25" for 2.5V 10% "-" Default (datasheet limits) See Tables 6 to 9 for rise/fall times "L" "A" "R" "B" "S" "D" "T" "E" "U" "F" "W" "G" "X" "K" "Y" "Q" "28" for 2.8V 10% "33" for 3.3V 10% "Z" "M" "N" "P" Frequency Tolerance "F" for 10 PPM "1" for 20 PPM Package "2" for 25 PPM "G" 2.5 x 2.0 "3" for 50 PPM "2" 3.2 x 2.5 "3" 5.0 x 3.2 "8" 7.0 x 5.0 Rev. 1.1 Page 10 of 15 www.sitime.com SiT8209 Ultra-Performance Oscillator Table 10. Additional Information Document Description Download Link Time Machine II MEMS oscillator programmer http://www.sitime.com/support/time-machine-oscillator-programmer Field Programmable Oscillators Devices that can be programmable in the field by Time Machine II http://www.sitime.com/products/field-programmable-oscillators Manufacturing Notes Tape & Reel dimension, reflow profile and other manufacturing related info http://www.sitime.com/component/docman/doc_download/243-manufacturingnotes-for-sitime-oscillators Qualification Reports RoHS report, reliability reports, composition reports http://www.sitime.com/support/quality-and-reliability Performance Reports Additional performance data such as phase noise, current consumption and jitter for selected frequencies http://www.sitime.com/support/performance-measurement-report Termination Techniques Termination design recommendations http://www.sitime.com/support/application-notes Layout Techniques Layout recommendations http://www.sitime.com/support/application-notes SiTime Corporation, 5451 Patrick Henry Drive, Santa Clara, CA 95054, USA | Phone: +1-408-328-4400 | Fax: +1-408-328-4439 (c) SiTime Corporation 2016-2017. The information contained herein is subject to change at any time without notice. SiTime assumes no responsibility or liability for any loss, damage or defect of a Product which is caused in whole or in part by (i) use of any circuitry other than circuitry embodied in a SiTime product, (ii) misuse or abuse including static discharge, neglect or accident, (iii) unauthorized modification or repairs which have been soldered or altered during assembly and are not capable of being tested by SiTime under its normal test conditions, or (iv) improper installation, storage, handling, warehousing or transportation, or (v) being subjected to unusual physical, thermal, or electrical stress. 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Rev. 1.1 Page 11 of 15 www.sitime.com Silicon MEMS Outperforms Quartz Supplemental Information The Supplemental Information section is not part of the datasheet and is for informational purposes only. Rev. 1.1 Page 12 of 15 www.sitime.com Silicon MEMS Outperforms Quartz Best Electro Magnetic Susceptibility (EMS) Silicon MEMS Outperforms Quartz Best Reliability Silicon is inherently more reliable than quartz. Unlike quartz suppliers, SiTime has in-house MEMS and analog CMOS expertise, which allows SiTime to develop the most reliable products. Figure 1 shows a comparison with quartz technology. SiTime's oscillators in plastic packages are up to 54 times more immune to external electromagnetic fields than quartz oscillators as shown in Figure 3. Why is EpiSeal MEMS Best in Class: Internal differential architecture for best common mode noise rejection Electrostatically driven MEMS resonator is more immune to EMS Why is EpiSealTM MEMS Best in Class: TXC Vibration Sensitivity (ppb/g) SiTime's MEMS resonators are vacuum sealed using an advanced EpiSealTM process, which eliminates foreign particles and improves long term aging and reliability World-class MEMS and CMOS design expertise EPS CW KYCA SLAB EpiSeal MEMS 100.0 10.0 1.0 0.1 0.0 10 100 1000 Vibration Frequency (Hz) Figure 3. Electro Magnetic Susceptibility (EMS) [3] Best Power Supply Noise Rejection SiTime's MEMS oscillators are more resilient against noise on the power supply. A comparison is shown in Figure 4. Figure 1. Reliability Comparison[1] Best Aging Unlike quartz, MEMS oscillators have excellent long term aging performance which is why every new SiTime product specifies 10-year aging. A comparison is shown in Figure 2. Why is EpiSeal MEMS Best in Class: On-chip regulators and internal differential architecture for common mode noise rejection MEMS resonator is paired with advanced analog CMOS IC Why is EpiSeal MEMS Best in Class: SiTime's MEMS resonators are vacuum sealed using an advanced EpiSealTM process, which eliminates foreign particles and improves long term aging and reliability Inherently better immunity of electrostatically driven MEMS resonator MEMS vs. Quartz Aging EpiSeal MEMS Oscillator Quartz Oscillator 10 8 Aging ( PPM) 8 6 Figure 4. Power Supply Noise Rejection 4 2 3 [4] 3.5 1.5 0 1-Year 10-Year Figure 2. Aging Comparison Rev. 1.1 [2] Page 13 of 15 www.sitime.com Silicon MEMS Outperforms Quartz Best Vibration Robustness Best Shock Robustness High-vibration environments are all around us. All electronics, from handheld devices to enterprise servers and storage systems are subject to vibration. Figure 5 shows a comparison of vibration robustness. SiTime's oscillators can withstand at least 50,000 g shock. They all maintain their electrical performance in operation during shock events. A comparison with quartz devices is shown in Figure 6. Why is EpiSeal MEMS Best in Class: Why is EpiSeal MEMS Best in Class: The moving mass of SiTime's MEMS resonators is up to 3000 times smaller than quartz Center-anchored MEMS resonator is the most robust design Figure 5. Vibration Robustness The moving mass of SiTime's MEMS resonators is up to 3000 times smaller than quartz Center-anchored MEMS resonator is the most robust design [6] Figure 6. Shock Robustness [5] Figure labels: TXC = TXC Epson = EPSN Connor Winfield = CW Kyocera = KYCA SiLabs = SLAB SiTime = EpiSeal MEMS Rev. 1.1 Page 14 of 15 www.sitime.com Silicon MEMS Outperforms Quartz Notes: 1. Data source: Reliability documents of named companies. 2. Data source: SiTime and quartz oscillator devices datasheets. 3. Test conditions for Electro Magnetic Susceptibility (EMS): According to IEC EN61000-4.3 (Electromagnetic compatibility standard) Field strength: 3V/m Radiated signal modulation: AM 1 kHz at 80% depth Carrier frequency scan: 80 MHz - 1 GHz in 1% steps Antenna polarization: Vertical DUT position: Center aligned to antenna Devices used in this test: 4. Label Manufacturer Part Number Technology EpiSeal MEMS SiTime SiT9120AC-1D2-33E156.250000 MEMS + PLL EPSN Epson EG-2102CA156.2500M-PHPAL3 Quartz, SAW TXC TXC BB-156.250MBE-T Quartz, 3rd Overtone CW Conner Winfield P123-156.25M Quartz, 3 Overtone rd KYCA AVX Kyocera KC7050T156.250P30E00 Quartz, SAW SLAB SiLab 590AB-BDG Quartz, 3rd Overtone + PLL Part Number Technology 50 mV pk-pk Sinusoidal voltage. Devices used in this test: Label 5. 6. Manufacturer EpiSeal MEMS SiTime SiT8208AI-33-33E-25.000000 MEMS + PLL NDK NDK NZ2523SB-25.6M Quartz KYCA AVX Kyocera KC2016B25M0C1GE00 Quartz EPSN Epson SG-310SCF-25M0-MB3 Quartz Devices used in this test: same as EMS test stated in Note 3. Test conditions for shock test: MIL-STD-883F Method 2002 Condition A: half sine wave shock pulse, 500-g, 1ms Continuous frequency measurement in 100 s gate time for 10 seconds Devices used in this test: 7. same as EMS test stated in Note 3. Additional data, including setup and detailed results, is available upon request to qualified customer. Rev. 1.1 Page 15 of 15 www.sitime.com