SiT8209
Ultra-Performance Oscillator
Features
Any frequency between 80.000001 and 220 MHz accurate to
6 decimal places
100% pin-to-pin drop-in replacement to quartz-based oscillators
Ultra-low phase jitter: 0.5 ps (12 kHz to 20 MHz)
Frequency stability as low as ±10 PPM
Industrial or extended commercial temperature range
LVCMOS/LVTTL compatible output
Standard 4-pin packages: 2.5 x 2.0, 3.2 x 2.5, 5.0 x 3.2,
7.0 x 5.0 mm x mm
Outstanding silicon reliability of 2 FIT or 500 million hour MTBF
Pb-free, RoHS and REACH compliant
Ultra-short lead time
Applications
SATA, SAS, Ethernet, 10-Gigabit Ethernet, SONET, PCI
Express, video, Wireless
Computing, storage, networking, telecom, industrial control
Table 1. Electrical Characteristics
[1]
Parameter Symbol Min. Typ. Max. Unit Condition
Output Frequency Range f 80.000001
– 220 MHz
Frequency Stability F_stab -10 – +10 PPM Inclusive of Initial tolerance at 25 °C, and variations over
operating temperature, rated power supply voltage and load
-20 – +20 PPM
-25 – +25 PPM
-50 – +50 PPM
Operating Temperature Range T_use -20 – +70 °C Extended Commercial
-40 – +85 °C Industrial
Supply Voltage Vdd 1.71 1.8 1.89 V Supply voltages between 2.5V and 3.3V can be supported.
Contact SiTime for guaranteed performance specs for supply
voltages not specified in this table.
2.25 2.5 2.75 V
2.52 2.8 3.08 V
2.97 3.3 3.63 V
Current Consumption Idd – 34 36 mA No load condition, f = 100 MHz, Vdd = 2.5V, 2.8V or 3.3V
– 30 33 mA No load condition, f = 100 MHz, Vdd = 1.8V
OE Disable Current I_OD – – 31 mA Vdd = 2.5V, 2.8V or 3.3V, OE = GND, output is Weakly Pulled
Down
– – 30 mA Vdd = 1.8 V. OE = GND, output is Weakly Pulled Down
Standby Current I_std – – 70 µA Vdd = 2.5V, 2.8V or 3.3V,
ST
= GND, output is Weakly
Pulled Down
– – 10 µA Vdd = 1.8 V.
ST
= GND, output is Weakly Pulled Down
Duty Cycle DC 45 – 55 % f <= 165 MHz, all Vdds.
40 – 60 % f > 165 MHz, all Vdds.
Rise/Fall Time Tr, Tf – 1.2 2 ns 15 pF load, 10% - 90% Vdd
Output Voltage High VOH 90% – – Vdd IOH = -6 mA, IOL = 6 mA, (Vdd = 3.3V, 2.8V, 2.5V)
IOH = -3 mA, IOL = 3 mA, (Vdd = 1.8V)
Output Voltage Low VOL – – 10% Vdd
Input Voltage High VIH 70% – – Vdd Pin 1, OE or
ST
Input Voltage Low VIL – – 30% Vdd Pin 1, OE or
ST
Input Pull-up Impedance Z_in – 100 250 kΩ Pin 1, OE logic high or logic low, or
ST
logic high
2 – – MΩ Pin 1,
ST
logic low
Startup Time T_start – 7 10 ms Measured from the time Vdd reaches its rated minimum value
OE Enable/Disable Time T_oe – – 115 ns f = 80 MHz, For other frequencies, T_oe = 100 ns + 3 cycles
Resume Time T_resume
– – 10 ms In standby mode, measured from the time
ST
pin
crosses 50% threshold. Refer to
Figure
5
.
RMS Period Jitter T_jitt – 1.5 2 ps f = 156.25 MHz, Vdd = 2.5V, 2.8V or 3.3V
– 2 3 ps f = 156.25 MHz, Vdd = 1.8V
RMS Phase Jitter (random) T_phj – 0.5 1 ps f = 156.25 MHz, Integration bandwidth = 12 kHz to 20 MHz
First year Aging F_aging -1.5 – +1.5 PPM 25°C
10-year Aging -5 – +5 PPM 25°C
Note:
1. All electrical specifications in the above table are specified with 15 pF output load and for all Vdd(s) unless otherwise stated.
Rev 1.1 January 2, 2017
www.sitime.com
Rev. 1.1 Page 2 of 15 www.sitime.com
SiT8209
Ultra-Performance Oscillator
Table 2. Pin Configuration
2. A pull-up resistor of <10 kΩ between OE/ ST pin and Vdd is recommended in high noise environment.
3. A capacitor of value 0.1 µF between Vdd and GND is recommended.
Table 3. Absolute Maximum
Attempted operation outside the absolute maximum ratings of the part may cause permanent damage to the part.
Actual performance of the IC is only guaranteed within the operational specifications, not at absolute maximum ratings.
Parameter Min. Max. Unit
Storage Temperature -65 150 °C
VDD -0.5 4 V
Electrostatic Discharge – 2000 V
Soldering Temperature (follow standard Pb free soldering guidelines) – 260 °C
Junction Temperature – 150 °C
Table 4. Thermal Consideration
Package
θ
JA, 4 Layer Board
(°C/W)
θ
JA, 2 Layer Board
(°C/W)
θ
JC, Bottom
(°C/W)
7050 191 263 30
5032 97 199 24
3225 109 212 27
2520 117 222 26
Table 5. Environmental Compliance
Parameter Condition/Test Method
Mechanical Shock MIL-STD-883F, Method 2002
Mechanical Vibration MIL-STD-883F, Method 2007
Temperature Cycle JESD22, Method A104
Solderability MIL-STD-883F, Method 2003
Moisture Sensitivity Level MSL1 @ 260°C
Pin Symbol Functionality
1
OE/ ST
Output
Enable
H or Open
[2]
: specified frequency output
L: output is high impedance. Only output driver is disabled.
Standby
H or Open
[2]
:
specified frequency output
L: output is low (weak pull down). Device goes to sleep mode.
Supply current reduces to I_std.
2 GND Power Electrical ground
[3]
3 OUT Output Oscillator output
4 VDD Power Power supply voltage
[3]
Top View
Figure 1. Pin Assignments
Notes:
1
4
2
3
OE/ST
GND
OUT
VDD
Rev. 1.1 Page 3 of 15 www.sitime.com
SiT8209
Ultra-Performance Oscillator
tf
H
i
g
h
P
u
l
s
e
(TH)
Lo
w
Pu
l
s
e
(TL)
Pe
r
i
od
Phase Noise Plot
-40
-60
-80
-100
-120
-140
-160
3 4 5 6
7
10
10
10 10 10
Frequency offset (Hz)
Figure 2. Phase Noise, 156.25 MHz, 3.3V, LVCMOS Output
Test Circuit and Waveform
[4]
Vdd Vout
Test
Point
tr
Power
Supply
4 3
0.1µF
1 2
15pF
(including probe
and fixture
capacitance)
90% Vdd
50%
10% Vdd
OE/ST Function
Vdd
1k
Ω
Figure 3. Test Circuit Figure 4. Waveform
Notes:
4. Duty Cycle is computed as Duty Cycle = TH/Period.
5. SiT8209 supports the configurable duty cycle feature. For custom duty cycle at any given frequency, contact SiTime.
Phase noise (dBc/Hz)
I
nte
g
rate
d
r
and
om
p
has
e
j
itte
r
(1
2
k
Hz
t
o
20MH
z
)
:
0
.
4
9
ps,
R
MS
Rev. 1.1 Page 4 of 15 www.sitime.com
SiT8209
Ultra-Performance Oscillator
Timing Diagram
Figure 5. Startup Timing (OE/ST Mode) Figure 6. Standby Resume Timing (ST Mode Only)
Figure 6. OE Enable Timing (OE Mode Only)
Figure 7. OE Disable Timing (OE Mode Only)
Notes:
6. SiT8209 supports NO RUNT pulses and No glitches during startup or resume.
7. SiT8209 supports gated output which is accurate within rated frequency stability from the first cycle.
Rev. 1.1 Page 5 of 15 www.sitime.com
SiT8209
Ultra-Performance Oscillator
Performance Plots
[8]
Figure 8. Idd vs Frequency Figure 9. RMS Period Jitter vs Frequency
Figure 10. Duty Cycle vs Frequency Figure 11. RMS Phase Jitter vs Frequency
Figure 12. Idd vs Temperature, 100 MHz Output Figure 13. Rise Time vs Temperature, 100 MHz Output
Note:
8. All plots are measured with 15pF load at room temperature, unless otherwise stated.
3.3V 2.5V 1.8V
6
0
.
0
58.0
56.0
54.0
52.0
50.0
48.0
46.0
44.0
42.0
40.0
80
1
0
0
120
1
4
0
160
1
8
0
2
00
220
F
r
e
q
ue
n
cy
,
M
H
z
2.5V 3.3V 1.8V
1
0.9
0.8
0.7
0.6
0.5
0.4
0.3
0.2
0.1
0
80
1
0
0
1
2
0
140
160
1
8
0
2
00
2
2
0
F
r
e
q
ue
n
cy
,
M
H
z
1.8V 2.5V 3.3V
35
33
31
29
27
25
-40
-
2
0
0
2
0
T
emper
at
ure,
°
C
4
0
6
0
8
0
1
.8
V
(
10
%
-
9
0
%
)
2
.
5
V
(
1
0
%
-
9
0
%
)
3
.
3
V
(
10
%
-
90
%
)
1.8V (20%-80%) 2.5V (20%-80%) 3.3V (20%-80%)
2.0
1.5
1
.
0
0
.
5
0
.
0
-40
-
20
0
2
0
4
0
6
0
8
0
T
e
m
pera
t
u
r
e
,
°
C
Du
ty
cycle, %
Idd, mA
RM
S
Phase jitter, ps
Rise
Time,
ns
3.3V 2.5V 1.8V
4
0
.
0
38.0
36.0
34.0
32.0
30.0
28.0
26.0
24.0
22.0
20.0
80
1
0
0
1
2
0
1
4
0
1
6
0
1
8
0
2
00
2
2
0
F
r
equ
e
nc
y
,
MH
z
3
.
3
V
2
.
5
V
1
.
8
V
3
.
0
0
2.50
2.00
1.50
1.00
0.50
0.00
80
1
0
0
1
20
14
0
16
0
1
8
0
20
0
2
2
0
F
r
eq
u
e
n
cy
,
MH
z
Idd, mA
RMS Period jitte
r,
ps
Rev. 1.1 Page 6 of 15 www.sitime.com
SiT8209
Ultra-Performance Oscillator
Programmable Drive Strength
The SiT8209 includes a programmable drive strength feature
to provide a simple, flexible tool to optimize the clock rise/fall
time for specific applications. Benefits from the programmable
drive strength feature are:
Improves system radiated electromagnetic interference
(EMI) by slowing down the clock rise/fall time
Improves the downstream clock receiver’s (RX) jitter by
decreasing (speeding up) the clock rise/fall time.
Ability to drive large capacitive loads while maintaining
full swing with sharp edge rates.
For more detailed information about rise/fall time control and
drive strength selection, see the SiTime Applications Note
section: http://www.sitime.com/support/application-notes.
EMI Reduction by Slowing Rise/Fall Time
Figure 14 shows the harmonic power reduction as the rise/fall
times are increased (slowed down). The rise/fall times are
expressed as a ratio of the clock period. For the ratio of 0.05,
the signal is very close to a square wave. For the ratio of 0.45,
the rise/fall times are very close to near-triangular waveform.
These results, for example, show that the 11th clock harmonic
can be reduced by 35 dB if the rise/fall edge is increased from
5% of the period to 45% of the period.
Figure 15. Harmonic EMI reduction as a Function
of Slower Rise/Fall Time
Jitter Reduction with Faster Rise/Fall Time
Power supply noise can be a source of jitter for the
downstream chipset. One way to reduce this jitter is to
increase rise/fall time (edge rate) of the input clock. Some
chipsets would require faster rise/fall time in order to reduce
their sensitivity to this type of jitter. The SiT8209 provides up
to 3 additional high drive strength settings for very fast
rise/fall time. Refer to the Rise/Fall Time Tables to determine
the proper drive strength.
High Output Load Capability
The rise/fall time of the input clock varies as a function of the
actual capacitive load the clock drives. At any given drive
strength, the rise/fall time becomes slower as the output load
increases. As an example, for a 3.3V SiT8209 device with
default drive strength setting, the typical rise/fall time is
1.15ns for 15 pF output load. The typical rise/fall time slows
down to 2.72ns when the output load increases to 45 pF.
One can choose to speed up the rise/fall time to 1.41ns by
then increasing the drive strength setting on the SiT8209.
The SiT8209 can support up to 60 pF or higher in
maximum capacitive loads with up to 3 additional drive
strength settings.
Refer to the Rise/Tall Time Tables to
determine the proper drive strength for the desired
combination of output load vs.
rise/fall time
SiT8209 Drive Strength Selection
Tables 6 through 9 define the rise/fall time for a given
capacitive load and supply voltage.Select the table that
matches the SiT8208 nominal supply voltage (1.8V, 2.5V,
2.8V, 3.0V, 3.3V).
1. Select the table that matches the SiT8209 nominal
supply voltage (1.8V, 2.5V, 2.8V, 3.0V, 3.3V).
2. Select the capacitive load column that matches the
application requirement (5 pF to 60 pF)
3. Under the capacitive load column, select the
desired rise/fall times.
4. The left-most column represents the part number
code for the corresponding drive strength.
5. Add the drive strength code to the part number for
ordering purposes.
Calculating Maximum Frequency
Based on the rise and fall time data given in Tables 6
through 9, the maximum frequency the oscillator can
operate with guaranteed full swing of the output voltage
over temperature as follows:
Example 1
Calculate f
MAX
for the following condition:
Vdd = 1.8V (Table 6)
Capacitive Load: 30 pF
Typical Tr/f time = 5 ns
(rise/fall time part number code = G)
Part number for the above example:
SiT8209AIGG2-18E-55.500000
Drive strength code is inserted here. Default setting is “-”
1
6 x (T
rise
)
=
Max Frequency
Rev. 1.1 Page 7 of 15 www.sitime.com
SiT8209
Ultra-Performance Oscillator
Rise/Fall Time (10% to 90%) vs C
LOAD
Tables
Table 6. Vdd = 1.8V Rise/Fall Times
for Specific C
LOAD
Table 7. Vdd = 2.5V Rise/Fall Times
for Specific C
LOAD
Table 8. Vdd = 2.8V Rise/Fall Times
for Specific C
LOAD
Table 9. Vdd = 3.3V Rise/Fall Times
for Specific C
LOAD
Rise/Fall Time Typ (ns)
Drive Strength \ CLOAD
5 pF
15 pF
30 pF
45 pF
60 pF
L 7.18 11.59 17.24 27.57 35.57
A 3.61 6.02 10.19 13.98 18.10
R 2.31 3.95 6.88 9.42 12.24
B 1.65 2.92 5.12 7.10 9.17
S 1.43 2.26 4.09 5.66 7.34
D 1.01 1.91 3.38 4.69 6.14
T 0.94 1.51 2.86 3.97 5.25
E 0.90 1.36 2.50 3.46 4.58
U 0.86 1.25 2.21 3.03 4.07
F or "-": Default 0.48 1.15 1.95 2.72 3.65
W 0.38 1.04 1.77 2.47 3.31
G 0.36 0.87 1.66 2.23 3.03
X 0.34 0.70 1.56 2.04 2.80
K 0.33 0.63 1.48 1.89 2.61
Y 0.32 0.60 1.40 1.79 2.43
Q 0.32 0.58 1.31 1.69 2.28
Z 0.30 0.56 1.22 1.62 2.17
M 0.30 0.55 1.12 1.54 2.07
N 0.30 0.54 1.02 1.47 1.97
P 0.29 0.52 0.95 1.41 1.90
Rise/Fall Time Typ (ns)
Drive Strength \ CLOAD
5 pF
15 pF
30 pF
45 pF
60 pF
L 7.93 12.69 17.94 30.10 38.89
A 4.06 6.66 11.04 15.31 19.80
R 2.68 4.40 7.53 10.29 13.37
B 2.00 3.25 5.66 7.84 10.11
S 1.59 2.57 4.54 6.27 8.07
D 1.19 2.14 3.76 5.21 6.72
T 1.00 1.79 3.20 4.43 5.77
E 0.94 1.51 2.78 3.84 5.06
U 0.90 1.38 2.48 3.40 4.50
F 0.87 1.29 2.21 3.03 4.05
W 0.62 1.19 1.99 2.76 3.68
G or "-": Default 0.41 1.08 1.84 2.52 3.36
X 0.37 0.96 1.72 2.33 3.15
K 0.35 0.78 1.63 2.15 2.92
Y 0.33 0.67 1.54 2.00 2.75
Q 0.32 0.63 1.46 1.89 2.57
Z 0.31 0.60 1.39 1.80 2.43
M 0.30 0.57 1.31 1.72 2.30
N 0.30 0.56 1.22 1.63 2.22
P 0.29 0.54 1.13 1.55 2.13
Rise/Fall Time Typ (ns)
Drive Strength \ CLOAD
5 pF
15 pF
30 pF
45 pF
60 pF
L 8.68 13.59 18.36 32.70 42.06
A 4.42 7.18 11.93 16.60 21.38
R 2.93 4.78 8.15 11.19 14.59
B 2.21 3.57 6.19 8.55 11.04
S 1.67 2.87 4.94 6.85 8.80
D 1.50 2.33 4.11 5.68 7.33
T 1.06 2.04 3.50 4.84 6.26
E 0.98 1.69 3.03 4.20 5.51
U 0.93 1.48 2.69 3.73 4.92
F 0.90 1.37 2.44 3.34 4.42
W 0.87 1.29 2.21 3.04 4.02
G or "-": Default 0.67 1.20 2.00 2.79 3.69
X 0.44 1.10 1.86 2.56 3.43
K 0.38 0.99 1.76 2.37 3.18
Y 0.36 0.83 1.66 2.20 2.98
Q 0.34 0.71 1.58 2.07 2.80
Z 0.33 0.65 1.51 1.95 2.65
M 0.32 0.62 1.44 1.85 2.50
N 0.31 0.59 1.37 1.77 2.39
P 0.30 0.57 1.29 1.70 2.28
Rise/Fall Time Typ (ns)
Drive Strength \ CLOAD
5 pF
15 pF
30 pF
45 pF
60 pF
L 12.45 17.68 19.48 46.21 57.82
A 6.50 10.27 16.21 23.92 30.73
R 4.38 7.05 11.61 16.17 20.83
B 3.27 5.30 8.89 12.18 15.75
S 2.62 4.25 7.20 9.81 12.65
D 2.19 3.52 6.00 8.31 10.59
T 1.76 3.01 5.14 7.10 9.15
E 1.59 2.59 4.49 6.25 7.98
U 1.49 2.28 3.96 5.55 7.15
F 1.22 2.10 3.57 5.00 6.46
W 1.07 1.88 3.23 4.50 5.87
G 1.01 1.64 2.95 4.12 5.40
X 0.96 1.50 2.74 3.80 4.98
K 0.92 1.41 2.56 3.52 4.64
Y 0.88 1.34 2.39 3.25 4.32
Q 0.86 1.29 2.24 3.04 4.06
Z or "-": Default 0.82 1.24 2.07 2.89 3.82
M 0.77 1.20 1.94 2.72 3.61
N 0.66 1.15 1.84 2.58 3.41
P 0.51 1.09 1.76 2.45 3.24
Rev. 1.1 Page 8 of 15 www.sitime.com
SiT8209
Ultra-Performance Oscillator
Instant Samples with Time Machine and
Field Programmable Oscillators
SiTime supports a field programmable version of the
SiT8209 low power oscillator for fast prototyping and real
time custom- ization of features. The field programmable
devices (FP devices) are available for all five standard
SiT8209 package sizes and can be configured to one’s
exact specification using the Time Machine II, an USB
powered MEMS oscillator programmer.
Customizable Features of the SiT8209 FP Devices
Include
Any frequency between 1 – 110 MHz
Three frequency stability options, ±20 PPM, ±25 PPM,
±50 PPM
Two operating temperatures, -20 to 70°C or -40 to 85°C
Five supply voltage options, 1.8V, 2.5V, 2.8V, 3.0V, and 3.3V
Output drive strength
For more information regarding SiTime’s field programmable
solutions, visit http://www.sitime.com/time-machine and
http://www.sitime.com/fp-devices.
SiT8209 is typically factory-programmed per customer
ordering codes for volume delivery.
Rev. 1.1 Page 9 of 15 www.sitime.com
SiT8209
Ultra-Performance Oscillator
Dimensions and Patterns
Package Size – Dimensions (Unit: mm)
[9]
Recommended Land Pattern (Unit: mm)
[10]
2.7 x 2.4 x 0.75 mm (100% compatible with 2.5 x 2. 0 mm footprint)
2.7 ± 0.05
1.00
1.9
YXXXX
.
3.2 x 2.5 x 0.75 mm
3.2 ± 0.05
2.1
2.2
#4
YXXXX
#3 #3 #4
#1 #2
#2 #1
5.0 x 3.2 x 0.75 mm
5.0 ± 0.05
2.39
2.54
#4
#3
YXXXX
#3 #4
#1 #2
#2 #1
1.15
1.5
7.0 x 5.0 x 0.90 mm
5.08
1.4
2.2
Notes:
9. Top marking: Y denotes manufacturing origin and XXXX denotes manufacturing lot number. The value of “Y” will depend on the assembly location
of the device.
10. A capacitor of value 0.1 µF between Vdd and GND is required.
2.4
± 0.05
1.25
0.50
1.5
1
.
0
1.1
2.5 ± 0.05
0.9
1.9
0.7
1.4
0.75 ± 0.05
0.8
3.2
±
0.05
0.75
±
0.05
1.1
2.2
7.0
±
0.05
5.0
±
0.05
YXXXX
2.6
0.90 ± 0.10
1.1
3.81
2.0
1.6
1.2
0.85
0.75 ± 0.05
0.9
5.08
Rev. 1.1 Page 10 of 15 www.sitime.com
SiT8209
Ultra-Performance Oscillator
Ordering Information
The Part No. Guide is for reference only. To customize and build an exact part number, use the SiTime
Part Number Generator.
SiT8209AC-23-25E - 156.123456 T
Part
Family
“SiT8209”
Revision
Letter
“A” is the silicon revision
Temperature
Range
“C” Ext. Commercial, -20 to 70ºC
“I” Industrial, -40 to 85ºC
Output
Drive
Strength
“–” Default (datasheet limits)
See Tables 6 to 9 for rise/fall
times
“L” “S” “U” “X” “Z”
“A” “D” “F” “K” “M”
“R” “T” “W” “Y” “N”
“B” “E” “G” “Q” “P”
Package
“G” 2.5 x 2.0
“2” 3.2 x 2.5
“3” 5.0 x 3.2
“8” 7.0 x 5.0
Packaging
“T”: Tape & Reel, 3K reel
“Y”: Tape & Reel, 1K reel
Blank for Bulk
Frequency
80.000001 to 220.000000 MHz
Feature
Pin
“E” for Output Enable
“S” for Standby
Voltage
Supply
“18” for 1.8V ±5%
“25” for 2.5V ±10%
“28” for 2.8V ±10%
“33” for 3.3V ±10%
Frequency
Tolerance
“F” for ±10 PPM
“1” for ±20 PPM
“2” for ±25 PPM
“3” for ±50 PPM
Rev. 1.1 Page 11 of 15 www.sitime.com
SiT8209
Ultra-Performance Oscillator
Table 10. Additional Information
Document Description Download Link
Time Machine II MEMS oscillator programmer http://www.sitime.com/support/time-machine-oscillator-programmer
Field Programmable
Oscillators
Devices that can be programmable in the field
by Time Machine II http://www.sitime.com/products/field-programmable-oscillators
Manufacturing Notes Tape & Reel dimension, reflow profile and
other manufacturing related info
http://www.sitime.com/component/docman/doc_download/243-manufacturing-
notes-for-sitime-oscillators
Qualification Reports RoHS report, reliability reports,
composition reports http://www.sitime.com/support/quality-and-reliability
Performance Reports
Additional performance data such as phase
noise, current consumption and jitter for selected
frequencies
http://www.sitime.com/support/performance-measurement-report
Termination Techniques Termination design recommendations http://www.sitime.com/support/application-notes
Layout Techniques Layout recommendations http://www.sitime.com/support/application-notes
SiTime Corporation, 5451 Patrick Henry Drive, Santa Clara, CA 95054, USA | Phone: +1-408-328-4400 | Fax: +1-408-328-4439
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Rev. 1.1 Page 12 of 15 www.sitime.com
Silicon MEMS Outperforms Quartz
Supplemental Information
The Supplemental Information section is not part of the datasheet and is for informational purposes only.
Rev. 1.1 Page 13 of 15 www.sitime.com
Silicon MEMS Outperforms Quartz
Silicon MEMS Outperforms Quartz
Best Reliability
Silicon is inherently more reliable than quartz. Unlike quartz
suppliers, SiTime has in-house MEMS and analog CMOS
expertise, which allows SiTime to develop the most reliable
products. Figure 1 shows a comparison with quartz
technology.
Why is EpiSeal™ MEMS Best in Class:
SiTime’s MEMS resonators are vacuum sealed using
an advanced EpiSeal™ process, which eliminates
foreign particles and improves long term aging and
reliability
World-class MEMS and CMOS design expertise
Figure 1. Reliability Comparison
[1]
Best Aging
Unlike quartz, MEMS oscillators have excellent long
term aging performance which is why every new SiTime
product specifies 10-year aging. A comparison is shown
in Figure 2.
Why is EpiSeal MEMS Best in Class:
SiTime’s MEMS resonators are vacuum sealed using
an advanced EpiSeal™ process, which eliminates
foreign particles and improves long term aging and
reliability
Inherently better immunity of electrostatically driven
MEMS resonator
1.5
3.5
3
8
0
2
4
6
8
10
1-Year 10-Year
Aging (±PPM)
MEMS vs. Quartz Aging
EpiSeal MEMS Oscillator Quartz Oscillator
Figure 2. Aging Comparison
[2]
Best Electro Magnetic Susceptibility (EMS)
SiTime’s oscillators in plastic packages are up to 54 times
more immune to external electromagnetic fields than quartz
oscillators as shown in Figure 3.
Why is EpiSeal MEMS Best in Class:
Internal differential architecture for best common
mode noise rejection
Electrostatically driven MEMS resonator is more
immune to EMS
0.0
0.1
1.0
10.0
100.0
10 100 1000
Vibration Sensitivity (ppb/g)
Vibration Frequency (Hz)
TXC EPS CW
KYCA
SLAB EpiSeal MEMS
Figure 3. Electro Magnetic Susceptibility (EMS)
[3]
Best Power Supply Noise Rejection
SiTime’s MEMS oscillators are more resilient against noise
on the power supply. A comparison is shown in Figure 4.
Why is EpiSeal MEMS Best in Class:
On-chip regulators and internal differential
architecture for common mode noise rejection
MEMS resonator is paired with advanced analog
CMOS IC
Figure 4. Power Supply Noise Rejection
[4]
Rev. 1.1 Page 14 of 15 www.sitime.com
Silicon MEMS Outperforms Quartz
Best Vibration Robustness
High-vibration environments are all around us. All
electronics, from handheld devices to enterprise servers
and storage systems are subject to vibration. Figure 5
shows a comparison of vibration robustness.
Why is EpiSeal MEMS Best in Class:
The moving mass of SiTime’s MEMS resonators is up
to 3000 times smaller than quartz
Center-anchored MEMS resonator is the most robust
design
Figure 5. Vibration Robustness
[5]
Best Shock Robustness
SiTime’s oscillators can withstand at least 50,000 g shock.
They all maintain their electrical performance in operation
during shock events. A comparison with quartz devices is
shown in Figure 6.
Why is EpiSeal MEMS Best in Class:
The moving mass of SiTime’s MEMS resonators is up
to 3000 times smaller than quartz
Center-anchored MEMS resonator is the most robust
design
Figure 6. Shock Robustness
[6]
Figure labels:
TXC = TXC
Epson = EPSN
Connor Winfield = CW
Kyocera = KYCA
SiLabs = SLAB
SiTime = EpiSeal MEMS
Rev. 1.1 Page 15 of 15 www.sitime.com
Silicon MEMS Outperforms Quartz
Notes:
1. Data source: Reliability documents of named companies.
2. Data source: SiTime and quartz oscillator devices datasheets.
3. Test conditions for Electro Magnetic Susceptibility (EMS):
According to IEC EN61000-4.3 (Electromagnetic compatibility standard)
Field strength: 3V/m
Radiated signal modulation: AM 1 kHz at 80% depth
Carrier frequency scan: 80 MHz – 1 GHz in 1% steps
Antenna polarization: Vertical
DUT position: Center aligned to antenna
Devices used in this test:
Label Manufacturer Part Number Technology
EpiSeal MEMS SiTime SiT9120AC-1D2-33E156.250000 MEMS + PLL
EPSN Epson EG-2102CA156.2500M-PHPAL3 Quartz, SAW
TXC TXC BB-156.250MBE-T Quartz, 3rd Overtone
CW Conner Winfield P123-156.25M Quartz, 3rd Overtone
KYCA AVX Kyocera KC7050T156.250P30E00 Quartz, SAW
SLAB SiLab 590AB-BDG Quartz, 3rd Overtone + PLL
4. 50 mV pk-pk Sinusoidal voltage.
Devices used in this test:
Label Manufacturer Part Number Technology
EpiSeal MEMS SiTime SiT8208AI-33-33E-25.000000 MEMS + PLL
NDK NDK NZ2523SB-25.6M Quartz
KYCA AVX Kyocera KC2016B25M0C1GE00 Quartz
EPSN Epson SG-310SCF-25M0-MB3 Quartz
5. Devices used in this test:
same as EMS test stated in Note 3.
6. Test conditions for shock test:
MIL-STD-883F Method 2002
Condition A: half sine wave shock pulse, 500-g, 1ms
Continuous frequency measurement in 100 µs gate time for 10 seconds
Devices used in this test:
same as EMS test stated in Note 3.
7. Additional data, including setup and detailed results, is available upon request to qualified customer.
