Current
1.0 A
For surface mounted application
Metal to silicon rectifier, majority carrier conduction
Low power loss, high efficiency
High current capability. low VF
High surge current capability
CASE:
PowerSMD1/Micro SMA
MECHANICAL DATA
Terminals: Pure tin plated, lead free
Polarity: Indicated by cathode band
Weight: 0.066 g.
May - 11
FSS13M - FSS14M - FSS16M
1 Amp. Surface Mount Schottky Barrier Rectifiers
Maximum Ratings and Electrical Characteristics at 25 ºC
V
RRM
Maximum Recurrent Peak Reverse Voltage (V)
I
FSM
8.3 ms.Peak Forward Surge Current
40
25 A
Easy pick and place
T
j
Operating Temperature Range
FSS14M
B
Marking code
(Jedec Method)
Voltage
30 V to 60 V
Epitaxial construction
High temperature soldering:
Plastic material used carriers Underwraiters
Laboratory Classification 94V-0
260 ºC / 10 seconds at terminals
Case: JEDEC SMA / DO-214AC Molded plastic
Packaging: 8 mm tape EIA-STD RS-481.
30
FSS13M
A
60
FSS16M
C
NOTES:
2. Mount on Cu-Pad Size 6mm x 6mm x 1.6mm on P.C.B.
1. Measured at 1 MHz and Applied Reverse Voltage of 4.0 V D.C.
Typical Thermal Resistance
30 °C/W
I
F(AV)
Forward Current at T
L
(See graphic) 1.0 A
R
th (j-l)
125 °C/W
R
th (j-a)
T
stg
Storage Temperature Range
-55°C to +150°C
Electrical Characteristics at Tamb = 25 °C
--
V
F
Maximum Instantaneous Forward Voltage
IF = 0.5 A @ 25 °C
@ 125 °C
0.45 V
0.35 V --
0.51 V
0.46 V
--
--
I
R
50
µ
A
Maximum DC Reverse Current Ta = 25 °C at
Rated DC Blocking Voltage Ta =125°C
5
µ
A
(Note 2)
C
j
Typical Junction Capacitance
(Note 1)
Dimensions in mm.
50 pF
40 pF
-55°C to +150°C
R
th (j-c)
40 °C/W
TYP. TYP. MAX.MAX.
0.55 V0.52 V
0.46 V 0.50 V
0.64 V
0.57 V
0.68 V
0.60 V
IF = 1.0 A @ 25 °C
@ 125 °C
Ta =150°C
TYP. TYP. MAX.MAX.
5
µ
A 50
µ
A
10 mA
3 mA
3 mA 10 mA
--
5.3 mA 6.7 mA --
Cathode band
2.70
2.30
2.10
2.30
0.73
0.63
0.20
0.10
1.35
1.15
0.85
0.65
X YM
Mounting Pad Layout
1.25
1.15
0.97
0.75
1.50
1.10
0.75
0.55
0.85
0.65
0.75
0.55
1.10
2.00
1.00
0.50 0.80
X = Marking code
M = Month code
Y = Year code