FSB50325AS - Fairchild Semiconductor

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FSB50325A, FSB50325AT, FSB50325AS Rev. C5

FSB50325A, FSB50325AT, FSB50325AS Motion SPM® 5 Series

October 2014

FSB50325A, FSB50325AT, FSB50325AS

Motion SPM® 5 Series

Features

• UL Certified No. E209204 (UL1557)

• 250 V RDS(on) = 1.7 Max FRFET MOSFET 3-Phase

Inverter with Gate Drivers and Protection

• Built-in Bootstrap Diodes Simplify PCB Layout

• Separate Open-Source Pins from Low-Side MOSFETs

for Three-Phase Current-Sensing

• Active-HIGH Interface, Works with 3.3 / 5 V Logic,

Schmitt-trigger Input

• Optimized for Low Electromagnetic Interference

• HVIC Temperature-Sensing Built-in for Temperature

Monitoring

• HVIC for Gate Driving and Under-Voltage Protection

• Isolation Rating: 1500 Vrms / 1 min.

• RoHS Compliant

• Moisture Sensitive Level (MSL) 3 - FSB50325AS

Applications

• 3-Phase Inverter Driver for Small Power AC Motor

Drives

Related Source

•RD-FSB50450A - Reference Design for Motion SPM

Series Ver.2

• AN-9082 - Motion SPM5 Series Thermal Performance

by Contact Pressure

• AN-9080 - User’s Guide for Motion SPM 5 Series V2

General Description

The FSB50325A/AT/AS is an advanced Motion SPM® 5

module providing a fully-featured, high-performance

inverter output stage for AC Induction, BLD C and PMSM

motors. These modules integrate optimized gate drive of

the built-in MOSFETs(FRFET® technology) to minimize

EMI and losses, while also providing multiple on-module

protection features including under-voltag e lockouts and

thermal monitoring. The built-in high-speed

HVIC requires only a single supply voltage and

translates the incoming logic-level gate inputs to the

high-voltage, high-current drive signals required to

properly drive the module's internal MOSFETs.

Separate open-source MOSFET terminals are available

for each phase to support the widest variety of control

algorithms.

Package Marking & Ordering Information

Device Device Marking Package Packing Type Quantity

FSB50325A FSB50325A SPM5P-023 Rail 15

FSB50325AT FSB50325AT SPM5N-023 Rail 15

FSB50325AS FSB50325AS SPM5Q-023 Rail 15

FSB50550A FSB50550AT FSB50550AS

FSB50325A, FSB50325AT, FSB50325AS Motion SPM® 5 Series

FSB50325A, FSB50325AT, FSB50325AS Rev. C5

Absolute Maximum Ratings

Inverter Part (each MOSFET unless otherwise specified.)

Control Part (each HVIC unless otherwise specified.)

Bootstrap Diode Part (each bootstrap diode unless otherwise specified.)

Thermal Resistance

Total System

1st Notes:

1. For the m easurement poin t of case temperature TC, please refer to Figure 4.

2. Marking “ * “ is calculation value or design factor.

Symbol Parameter Conditions Rating Unit

VDSS Drain-Source Voltage of Each MOSFET 250 V

*ID 25 Each MOSFET Drain Current, Continuous TC = 25°C 1.7 A

*ID 80 Each MOSFET Drain Current, Continuous TC = 80°C 1.3 A

*IDP Each MOSFET Drain Current, Peak TC = 25°C, PW < 100 s 4.4 A

*IDRMS Each MOSFET Drain Current, Rms TC = 80°C, FPWM < 20 kHz 0.9 Arms

*PDMaximum Power Dissipation TC = 25°C, For Each MOSFET 12.3 W

Symbol Parameter Conditions Rating Unit

VCC Control Supply Voltage Applied Between VCC and COM 20 V

VBS High-side Bias Voltage Applied Between VB and VS20 V

VIN Input Signal Voltage Applied Between IN and COM -0.3 ~ VCC + 0.3 V

Symbol Parameter Conditions Rating Unit

VRRMB Maximum Repetitive Reverse Voltage 250 V

* IFB Forward Current TC = 25°C 0.5 A

* IFPB Forward Current (Peak) TC = 25°C, Under 1ms Pulse Width 1.5 A

Symbol Parameter Conditions Rating Unit

RJC Junction to Case Thermal Resistance Each MOSFET under Inverter Oper -

ating Condition (1st Note 1) 10.2 °C/W

Symbol Parameter Conditions Rating Unit

TJOperating Junction Tem perature -40 ~ 150 °C

TSTG Storage Temperature -40 ~ 125 °C

VISO Isolation Voltage 60 Hz, Sinusoidal, 1 Minute, Con-

nect Pins to Heat Sink Plate 1500 Vrms

FSB50325A, FSB50325AT, FSB50325AS Motion SPM® 5 Series

FSB50325A, FSB50325AT, FSB50325AS Rev. C5

Pin descriptions

Figure 1. Pin Configuration and Internal Block Diagram (Bottom View)

1st Notes:

3. Source terminal of each low-side MOSFET is not connected to supply ground or bias voltage ground inside Motion SPM® 5 product. External connections should be made as

indicated in Figure 3.

Pin Number Pin Name Pin Description

1 COM IC Common Supply Ground

B(U) Bias Voltage for U-Phase High-Side MOSFET Driving

CC(U) Bias Voltage for U-Phase IC and Low-Side MOSFET Driving

4IN

(UH) Signal Input for U-Phase High-Side

5IN

(UL) Signal Input for U-Phase Low-Side

6 N.C No Connection

B(V) Bias Voltage for V-Phase High Side MOSFET Driving

CC(V) Bias Voltage for V-Phase IC and Low Side MOSFET Driving

9IN

(VH) Signal Input for V-Phase High-Side

10 IN(VL) Signal Input for V-Phase Low-Side

11 VTS Output for HVIC Temperature Sensing

12 VB(W) Bias Voltage for W-Phase High-Side MOSFET Driving

13 VCC(W) Bias Voltage for W-Phase IC and Low-Side MOSFET Driving

14 IN(WH) Signal Input for W-Phase High-Side

15 IN(WL) Signal Input for W-Phase Low-Side

16 N.C No Connection

17 P Positive DC-Link Input

18 U, VS(U) Output for U-Phase & Bias Voltage Ground for High-Side MOSFET Driving

19 NUNegative DC-Link Input for U-Phase

20 NVNegative DC-Link Input for V-Phase

21 V, VS(V) Output for V-Phase & Bias Voltage Ground for High-Side MOSFET Driving

22 NWNegative DC-Link Input for W-Phase

23 W, VS(W) Output for W Phase & Bias Voltage Ground for High-Side MOSFET Driving

(1) COM

(2) VB(U)

(3) VCC(U)

(4) I N (UH)

(5) I N (UL)

(6) N.C

(7) VB(V)

(8) VCC(V)

(9) I N (VH)

(10) IN(VL)

(11) VTS

(12 ) V B(W)

(13) VCC(W)

(14) IN (WH)

(15) IN (WL)

(16)

(17) P

(18) U, VS(U)

(19) NU

(20) NV

(21) V, VS(V)

(22) NW

(23) W, VS(W)

COM

VCC

LIN

HIN

COM

VCC

LIN

HIN

VTS

COM

VCC

LIN

HIN

N.C

FSB50325A, FSB50325AT, FSB50325AS Motion SPM® 5 Series

FSB50325A, FSB50325AT, FSB50325AS Rev. C5

Electrical Characteristics (TJ = 25°C, VCC = VBS = 15 V unless otherwise specified.)

Inverter Part (each MOSFET unless otherwise specified.)

Control Part (each HVIC unless otherwise specified.)

Bootstrap Diode Part (each bootstrap diode unless otherwise specified.)

2nd Notes:

1. BVDSS is the absolute maxi mum voltage rating between drain an d source terminal of each MOSFET inside Motion SPM® 5 product. VPN should be sufficiently less th an this

value consideri ng the ef f ect of the str ay inductance so that VPN should not exceed BVDSS in any case.

2. tON and tOFF include the propagation delay of the internal drive IC. Listed values are measured at the laboratory test condition, and they can be different according to the field

applications due to the effect of different printed circuit boards and wirings. Please see Figure 6 for the switching time definition with the switching test circuit of Figure 7.

3. The peak current and voltage of each MOSFET during the switching operation should be included in the Safe Operating Area (SOA). Please see Figure 7 for the RBSOA test

circuit that is same as the switching test circuit.

4. Vts is only for sensing-temperature of modu l e and can not shut down MOSFETs automatica ll y.

5. Built-in bootstrap diode includes around 15Ωresistance characteristic. Please refer to Figure 2.

Symbol Parameter Conditions Min Typ Max Unit

BVDSS Drain - Source

Breakdown Voltage VIN = 0 V, ID = 1 mA (2nd Note 1) 250 - - V

IDSS Zero Gate Voltage

Drain Current VIN = 0 V, VDS = 250 V - - 1 mA

RDS(on) Static Drain - Source

Turn-On Resistance VCC = VBS = 15 V, VIN = 5 V, ID = 1.0 A - 1.1 1.7 

VSD Drain - Source Diode

Forward Voltage VCC = VBS = 15V, VIN = 0 V, ID = -1.0 A - - 1.2 V

tON

Switching Times

VPN = 150 V, VCC = VBS = 15 V, ID = 1.0 A

VIN = 0 V  5 V, Inductive Load L = 3 mH

High- and Low-Side MOSFET Switching

(2nd Note 2)

- 810 - ns

tOFF - 600 - ns

trr - 140 - ns

EON -40- J

EOFF -10- J

RBSOA Reverse Bias Safe Oper-

ating Area

VPN = 200 V, VCC = VBS = 15 V, ID = IDP, VDS = BVDSS,

TJ = 150°C

High- and Low-Side MOSFET Switching (2nd Note 3) Full Square

Symbol Parameter Conditions Min Typ Max Unit

IQCC Quiescent VCC Current VCC = 15 V,

VIN = 0 V Applied Between VCC and COM - - 200 A

IQBS Quiescent VBS Current VBS = 15 V,

VIN = 0 V Applied Between VB(U) - U,

VB(V) - V, VB(W) - W - - 100 A

UVCCD Low-Side Under-Voltage

Protection (Figure 8) VCC Under-Voltage Protection Detectio n Level 7.4 8.0 9.4 V

UVCCR VCC Under-Voltage Protection Reset Level 8.0 8.9 9.8 V

UVBSD High-Side Under-Voltage

Protection (Figure 9) VBS Under-Voltage Protection Detection Level 7.4 8.0 9.4 V

UVBSR VBS Under-Voltage Protection Reset Level 8.0 8.9 9.8 V

VTS HVIC Temperature Sens-

ing Voltage Output VCC = 15 V, THVIC = 25°C (2nd Note 4) 600 790 980 mV

VIH ON Threshold Voltage Logic HIGH Level Applied between IN and COM --2.9V

VIL OFF Threshold Voltage Logic LOW Level 0.8 - - V

Symbol Parameter Conditions Min Typ Max Unit

VFB Forward Voltage IF = 0.1 A, TC = 25°C (2nd Note 5) - 2.5 - V

trrB Reverse Recovery Time IF = 0.1 A, TC = 25°C - 80 - ns

FSB50325A, FSB50325AT, FSB50325AS Motion SPM® 5 Series

FSB50325A, FSB50325AT, FSB50325AS Rev. C5

Recommended Operating Condition

Figure 2. Built-in Bootstrap Diode Characteristics (Typical)

Symbol Parameter Conditions Min. Typ. Max. Unit

VPN Supply Voltage Applied Between P and N - 150 200 V

VCC Control Supply Voltage Applied Between VCC and COM 13.5 15.0 16.5 V

VBS High-Side Bias Voltage Applied Between VB and VS13.5 15.0 16.5 V

VIN(ON) Input ON Threshold Voltage Applied Between IN and COM 3.0 -VCC V

VIN(OFF) Input OFF Threshold Voltage 0 -0.6 V

tdead Blanking Time for Preventing

Arm-Short VCC = VBS = 13.5 ~ 16.5 V, TJ 150°C 1.0 - - s

fPWM PWM Switching Frequency TJ 150°C - 15 - kHz

0123456789101112131415

0.0

0.1

0.2

0.3

0.4

0.5

0.6

0.7

0.8

0.9

1.0 Built-in Bootstrap Diode VF-IF Characteristic

IF [A]

VF [V]

Tc=25°C

FSB50325A, FSB50325AT, FSB50325AS Motion SPM® 5 Series

FSB50325A, FSB50325AT, FSB50325AS Rev. C5

Figure 3. Recommended MCU Interface and Bootstrap Circuit with Parameters

3rd Notes:

1. Parameters for bootstrap circuit elements are dependent on PWM algorithm. For 15 kHz of switching frequency, typical example of parameters is shown above.

2. RC-coupli ng (R 5 and C5) and C4 at each input of Motion SPM 5 product and MCU (Indicated as Dotted Lines) may be used to prevent improper signal due to surge-noise.

3. Bold lines should be short and thick in PCB pattern to have small stray inductance of circuit, which results in the reduction of surge-voltage. Byp ass capacitors such as C1, C2

and C3 should ha ve good high-frequency characteristics to absorb high-frequency ripple-current.

Figure 4. Case Temperature Measurement

3rd Notes:

4. Attach the thermocouple on top of the heat-sink of SPM 5 package (between SPM 5 package and heatsink if applied) to get the correct temperature m easurement.

Figure 5. Temperature Profile of VTS (Typical)

HIN LIN Output Note

0 0 Z Both FRFET Off

0 1 0 Low side F RFET On

10 V

DC High side F RFET On

1 1 Forbidden Shoot through

Open Open Z Same as (0,0)

COM

VCC

LIN

HIN

NR3

Inverter

Output

MCU

+15 V

10F

These values depend on PWM control algorithm

* Examp le of Bo ots trap Paramters:

C1 = C2 = 1F Ceramic Capacitor

VDC

VTS

* Example Circuit : V phase

One Leg Diagram of Mo ti on SPM® 5 Product

FSB50325A FSB50325AT

20 40 60 80 100 120 140 160

0.5

1.0

1.5

2.0

2.5

3.0

3.5

VTS [V]

THVIC [oC]

FSB50325A, FSB50325AT, FSB50325AS Motion SPM® 5 Series

FSB50325A, FSB50325AT, FSB50325AS Rev. C5

Figure 6. Switching Time Definitions

Figure 7. Switching and RBSOA (Single-pulse) Test Circuit (Low-side)

Figure 8. Under-Voltage Protection (Low-Side)

Figure 9. Under-Voltage Protection (High-Side)

tON trr

Irr

100% of ID120% of ID

(a) Turn -on

tOFF

(b) Tu rn -o ff

VDS

VIN VIN

10% of ID

COM

VCC

LIN

HIN

VCC

CBS

VDS

VTS

One Leg Diagram of Motion SPM® 5 Product

UVCCD

UVCCR

Input Signal

UV Protection

Status

Low-side Supply, VCC

MOSFET Current

RESET DETECTION RESET

UVBSD

UVBSR

Input Signal

UV Protection

Status

High-si de Supply, VBS

MOSFET Current

RESET DETECTION RESET

FSB50325A, FSB50325AT, FSB50325AS Motion SPM® 5 Series

FSB50325A, FSB50325AT, FSB50325AS Rev. C5

Figure 10. Example of Application Circuit

4th Notes:

1. About pin position, refer to Figure 1.

2. RC-coupling (R5 and C5, R4 and C6) and C4 at each input of Motion SPM® 5 product and MCU are useful to prevent impr oper input signal caused by surge-noise.

3. The voltage -drop acros s R3 affects the low-side switching performance and the bootstrap characteristics since it is placed between COM and the source terminal of the low-

side MOSFET. For this reason, the voltage-drop across R3 shou ld be less than 1 V in the steady-state.

4. Ground-wires and output terminals, should be thick and short in order to avoid surge-voltage and malfunction of HVIC.

5. All the filter capacitors should be connected close to Motion SPM 5 product, and they should have good characteristics for rejecting high-frequency ripple current.

COM

VCC

LIN

HIN

COM

VCC

LIN

HIN

COM

VCC

LIN

HIN

(1) COM

(2) VB(U)

(3) VCC(U)

(4) IN (UH)

(5) IN (UL)

(6) N.C

(7) VB(V)

(8) VCC(V)

(9) IN (VH)

(10) I N(VL)

(11) VTS

(12) V B(W)

(13) V CC(W)

(14) I N(WH)

(15) I N(WL)

(16) N .C

(17) P

(18) U, V S(U)

(19) N U

(22) N W

Micom

15 V

Supply

C3VDC

For current-sensing and protection

VTS

(21) V, V S(V)

(20) N V

(23) W, V S(W)

FSB50325A, FSB50325AT, FSB50325AS Motion SPM® 5 Series

FSB50325A, FSB50325AT, FSB50325AS Rev. C5

Detailed Package Outline Drawings (FSB50325A)

Package drawings are provided as a service to customers considering Fairchild components. Drawings may change in any manner

without notice. Please note the revision and/or data on the drawing and contact a FairchildSemiconductor representative to verify or

obtain the most recent revision. Package specifications do not expand the terms of Fairchild’s worldwide therm and conditions,

specifically the the warranty therein, which covers Fairchild products.

Always visit Fairchild Semiconductor’s online packaging area for the most recent package drawings:

http://www.fairchildsemi.com/dwg/MO/MOD23DC.pdf

FSB50325A, FSB50325AT, FSB50325AS Motion SPM® 5 Series

FSB50325A, FSB50325AT, FSB50325AS Rev. C5

Detailed Package Outline Drawings (FSB50325AT)

Package drawings are provided as a service to customers considering Fairchild components. Drawings may change in any manner

without notice. Please note the revision and/or data on the drawing and contact a FairchildSemiconductor representative to verify or

obtain the most recent revision. Package specifications do not expand the terms of Fairchild’s worldwide therm and conditions,

specifically the the warranty therein, which covers Fairchild products.

Always visit Fairchild Semiconductor’s online packaging area for the most recent package drawings:

http://www.fairchildsemi.com/dwg/MO/MOD23DF.pdf

FSB50325A, FSB50325AT, FSB50325AS Motion SPM® 5 Series

FSB50325A, FSB50325AT, FSB50325AS Rev. C5

Detailed Package Outline Drawings (FSB50325AS)

Package drawings are provided as a service to customers considering Fairchild components. Drawings may change in any manner

without notice. Please note the revision and/or data on the drawing and contact a FairchildSemiconductor representative to verify or

obtain the most recent revision. Package specifications do not expand the terms of Fairchild’s worldwide therm and conditions,

specifically the the warranty therein, which covers Fairchild products.

Always visit Fairchild Semiconductor’s online packaging area for the most recent package drawings:

http://www.fairchildsemi.com/dwg/MO/MOD23DG.pdf

FSB50325A, FSB50325AT, FSB50325AS Motion SPM® 5 Series

FSB50325A, FSB50325AT, FSB50325AS Rev. C5

www.onsemi.com

ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries.

ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor’s product/patent

coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. ON Semiconductor reserves the right to make changes without further notice to any products herein.

ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability

arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages.

Buyer is responsible for its products and applications using ON Semiconductor products, including compliance with all laws, regulations and safety requirements or standards,

regardless of any support or applications information provided by ON Semiconductor. “Typical” parameters which may be provided in ON Semiconductor data sheets and/or

specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer

application by customer’s technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not

designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification

in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended or unauthorized

application, Buyer shall indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and

expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such

claim alleges that ON Semiconductor was negligent regarding the design or manufacture of the part. ON Semiconductor is an Equal Opportunity/Affirmative Action Employer. This

literature is subject to all applicable copyright laws and is not for resale in any manner.

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