MITSUBISHI SEMICONDUCTOR <TRANSISTOR ARRAY> M54567P/FP 4-UNIT 1.5A DARLINGTON TRANSISTOR ARRAY WITH CLAMP DIODE DESCRIPTION M54567P and M54567FP are four-circuit Darlington transistor arrays with clamping diodes. The circuits are made of PNP and NPN transistors. Both the semiconductor integrated circuits perform high-current driving with extremely low input-current supply. PIN CONFIGURATION VCC OUTPUT1 1 15 O4 OUTPUT4 14 IN4 INPUT4 INPUT1 IN1 3 4 GND 5 13 GND 12 11 IN3 INPUT3 INPUT2 IN2 6 FEATURES A High breakdown voltage (BV CEO 50V) A High-current driving (Ic(max) = 1.5A) A With clamping diodes A Driving available with NMOS IC output A Wide operating temperature range (Ta = -20 to +75C) OUTPUT2 10 O3 OUTPUT3 O2 7 VCC COM COMMON 16 O1 2 8 9 COM COMMON 16P4(P) Package type 16P2N-A(FP) CIRCUIT DIAGRAM APPLICATION Drives of relays and printers, digit drives of indication elements (LEDs and lamps), and power amplification VCC COM 22K INPUT 8K OUTPUT 2K 5.5K FUNCTION The M54567P and M54567FP each have four circuits, which are made of PNP transistors and NPN Darlington transistors. The input has 8k, and a spike-killer clamping diode is provided between the output pin (collector) and COM pin. All output transistor emitters are connected to the GND pin. Collector current is 1.5A maximum. The maximum collectoremitter voltage is 50V. The M54567FP is enclosed in a molded small flat package, enabling space-saving design. ABSOLUTE MAXIMUM RATINGS Symbol VCC VCEO The four circuits share the COM and GND. The diode, indicated with the dotted line, is parasitic, and cannot be used. Unit : (Unless otherwise noted, Ta = -20 ~ +75 C) Parameter IC Collector-emitter voltage Collector current VI VR Input voltage Clamping diode reverse voltage IF Clamping diode forward current Pd Topr Power dissipation Tstg GND Conditions Supply voltage Operating temperature Storage temperature 3K Output, H Current per circuit output, L Ratings 10 Unit V -0.5 ~ +50 1.5 V A -0.5 ~ +30 V V Pulse Width 10ms, Duty Cycle 5% 50 1.5 Pulse Width 100ms, Duty Cycle 5% Ta = 25C, when mounted on board 1.0 1.92(P)/1.00(FP) -20 ~ +75 -55 ~ +125 A W C C Aug. 1999 MITSUBISHI SEMICONDUCTOR <TRANSISTOR ARRAY> M54567P/FP 4-UNIT 1.5A DARLINGTON TRANSISTOR ARRAY WITH CLAMP DIODE RECOMMENDED OPERATING CONDITIONS Symbol (Unless otherwise noted, Ta = -20 ~ +75C) Parameter Limits typ min max Unit VCC Supply voltage 4 5 6 VO Output voltage Collector current (Current per 1 circuit when 4 circuits are coming on simultaneously) 0 -- 50 0 -- 1.25 0 -- 0.7 VCC -0.5 -- -- VCC V VCC-3.5 V IC VIH VIL VCC = 5V, Duty Cycle P : no more than 4% FP : no more than 2% VCC = 5V, Duty Cycle P : no more than 18% FP : no more than 9% "H" input voltage "L" input voltage A 0 ELECTRICAL CHARACTERISTICS V V (Unless otherwise noted, Ta = -20 ~ +75C) Symbol Parameter V (BR) CEO ICC Collector-emitter breakdown voltage Supply current (One circuit coming on) VCE (sat) Collector-emitter saturation voltage II Input current IR Clamping diode reverse current VF h FE Clamping diode forward voltage DC amplification factor Limits Test conditions min 50 ICEO = 100A VCC = 6V, V I = 0.5V VCC = 4V, V I = 0.5V, IC = 1.25A VCC = 4V, VI = 0.5V, IC = 0.7A VI = VCC -3.5V typ+ -- V -- 3.0 4.5 mA -- -- 1.6 1.1 2.2 1.7 V -- -0.3 -0.6 VI = VCC -6V -- VR = 50V IF = 1.25A, VCC open -- -- -0.58 -- -0.95 100 1.6 2.3 VCC = 4V, V CE = 4V, IC = 1A, Ta = 25C Unit max -- 4000 30000 mA A V -- -- + : The typical values are those measured under ambient temperature (Ta) of 25C. There is no guarantee that these values are obtained under any conditions. SWITCHING CHARACTERISTICS (Unless otherwise noted, Ta = 25C) Symbol Parameter ton Turn-on time toff Turn-off time min CL = 15pF (note 1) NOTE 1 TEST CIRCUIT INPUT Limits Test conditions Unit typ max -- 190 -- ns -- 5300 -- ns TIMING DIAGRAM VCC VO Measured device INPUT 50% 50% RL OPEN OUTPUT PG OUTPUT 50 CL 50% ton 50% toff (1) Pulse generator (PG) characteristics : PRR = 1kHz, tw = 10s, tr = 6ns, tf = 6ns, ZO = 50 VI = 0.5 to 4V (2) Input-output conditions : RL = 8.3, VO = 10V, VCC = 4V (3) Electrostatic capacity CL includes floating capacitance at connections and input capacitance at probes Aug. 1999 MITSUBISHI SEMICONDUCTOR <TRANSISTOR ARRAY> M54567P/FP 4-UNIT 1.5A DARLINGTON TRANSISTOR ARRAY WITH CLAMP DIODE TYPICAL CHARACTERISTICS Output Saturation Voltage Collector Current Characteristics Thermal Derating Factor Characteristics 1.6 2.0 VCC = 4V VI = 0.5V Collector current Ic (A) Power dissipation Pd (W) M54567P 1.5 M54567FP 1.0 0.5 0 25 50 75 Ta = 25C 0.4 0 100 *The collector current values represent the current per circuit. *Repeated frequency 10Hz *The value in the circle represents the value of the simultaneously-operated circuit. 20 40 60 2.0 80 *The collector current values represent the current per circuit. *Repeated frequency 10Hz *The value in the circle represents the value of the simultaneously-operated circuit. *VCC = 5V *Ta = 75C 1.5 1.0 0.5 *VCC = 5V *Ta = 25C 0 100 0 20 40 60 80 Duty cycle (%) Duty cycle (%) Duty-Cycle-Collector Characteristics (M54567FP) Duty-Cycle-Collector Characteristics (M54567FP) 1.0 0.5 20 40 60 Duty cycle (%) 80 100 Collector current Ic (A) 1.5 100 2.0 *The collector current values represent the current per circuit. *Repeated frequency 10Hz *The value in the circle represents the value of the simultaneously-operated circuit. *VCC = 5V *Ta = 25C 0 Collector current Ic (A) 2.0 0 1.5 Duty-Cycle-Collector Characteristics (M54567P) 2.0 0 1.0 Duty-Cycle-Collector Characteristics (M54567P) 1.0 0 0.5 Output saturation voltage VCE (sat) (V) 1.5 0.5 0 Ta = -20C Ambient temperature Ta (C) 2.0 Collector current Ic (A) 0.8 Ta = 75C 0 Collector current Ic (A) 1.2 *The collector current values represent the current per circuit. *Repeated frequency 10Hz *The value in the circle represents the value of the simultaneously-operated circuit. *VCC = 5V *Ta = 75C 1.5 1.0 0.5 0 0 20 40 60 80 100 Duty cycle (%) Aug. 1999 MITSUBISHI SEMICONDUCTOR <TRANSISTOR ARRAY> M54567P/FP 4-UNIT 1.5A DARLINGTON TRANSISTOR ARRAY WITH CLAMP DIODE DC Amplification Factor Collector Current Characteristics Grounded Emitter Transfer Characteristics 1.6 VCC = 4V VCE = 4V 7 5 3 2 Ta = 75C Collector current Ic (A) DC amplification factor hFE 105 104 7 5 Ta = 25C 3 2 Ta = -20C 103 7 5 3 2 VCC = 4V VCE = 4V 1.2 0.8 Ta = 75C Ta = 25C 0.4 Ta = -20C 102 1 10 2 3 5 7 102 2 3 5 7 103 2 3 5 7 104 0 Collector current Ic (mA) 0 1.5 2.0 Clamping Diode Characteristics 2.0 Forward bias current IF (A) VCC = 5V -0.8 Input current II (mA) 1.0 Supply voltage-Input voltage VCC-VI (V) Input Characteristics -1.0 0.5 -0.6 Ta = 25C Ta = -20C -0.4 -0.2 Ta = 75C 1.5 1.0 0.5 Ta = -20C Ta = 75C Ta = 25C 0 0 1 2 3 4 5 Supply voltage-Input voltage VCC-VI (V) 0 0 0.5 1.0 1.5 2.0 Forward bias voltage VF (V) Supply Current Characteristics Supply current Icc (mA) 10.0 VI = 0.5V 8.0 6.0 Ta = 25C Ta = -20C 4.0 Ta = 75C 2.0 0 0 2 4 6 8 10 Supply voltage VCC (V) Aug. 1999