Aug. 1999
PIN CONFIGURATION
MITSUBISHI SEMICONDUCTOR <TRANSISTOR ARRAY>
M54567P/FP
4-UNIT 1.5A DARLINGTON TRANSISTOR ARRAY WITH CLAMP DIODE
DESCRIPTION
M54567P and M54567FP are four-circuit Darlington transis-
tor arrays with clamping diodes. The circuits are made of
PNP and NPN transistors. Both the semiconductor inte-
grated circuits perform high-current driving with extremely
low input-current supply.
FEATURES
ÁHigh breakdown voltage (BV CEO ≥ 50V)
ÁHigh-current driving (Ic(max) = 1.5A)
ÁWith clamping diodes
ÁDriving available with NMOS IC output
ÁW ide operating temperature range (Ta = –20 to +75°C)
APPLICATION
Drives of relays and printers, digit drives of indication ele-
ments (LEDs and lamps), and power amplification
FUNCTION
The M54567P and M54567FP each have four circuits, which
are made of PNP transistors and NPN Darlington transistors.
The input has 8kΩ, and a spike-killer clamping diode is pro-
vided between the output pin (collector) and COM pin. All
output transistor emitters are connected to the GND pin.
Collector current is 1.5A maximum. The maximum collector-
emitter voltage is 50V.
The M54567FP is enclosed in a molded small flat package,
enabling space-saving design.
CIRCUIT DIAGRAM
V
V
A
V
V
W
°C
°C
10
–0.5 ~ +50
1.5
–0.5 ~ +30
50
1.5
1.0
1.92(P)/1.00(FP)
–20 ~ +75
–55 ~ +125
IFA
Ratings UnitSymbol Parameter Conditions
Supply voltage
Collector-emitter voltage
Collector current
Input voltage
Clamping diode reverse voltage
Power dissipation
Operating temperature
Storage temperature
Output, H
Current per circuit output, L
Pulse Width ≤ 10ms, Duty Cycle ≤ 5%
Pulse Width ≤ 100ms, Duty Cycle ≤ 5%
Ta = 25°C, when mounted on board
VCC
VCEO
IC
VI
VR
Pd
Topr
Tstg
Clamping diode forward current
ABSOLUTE MAXIMUM RATINGS (Unless otherwise noted, Ta = –20 ~ +75 °C)
22K
2K
5.5K 3K
8K
GND
COM
V
CC
INPUT OUTPUT
The diode, indicated with the dotted line, is parasitic, and cannot
be used.
Unit : Ω
The four circuits share the COM and GND.
1
O1←
IN1→
IN2→
O2←
V
CC
COM COMMON
V
CC
COM COMMON
GND GND
2
3
4
5
6
7
8
16
15
14
13
12
11
10
9
→O3
←IN3
←IN4
→O4
OUTPUT4
INPUT4
INPUT3
OUTPUT3
OUTPUT1
INPUT1
INPUT2
OUTPUT2
16P4(P)
Package type 16P2N-A(FP)
Aug. 1999
MITSUBISHI SEMICONDUCTOR <TRANSISTOR ARRAY>
M54567P/FP
4-UNIT 1.5A DARLINGTON TRANSISTOR ARRAY WITH CLAMP DIODE
RECOMMENDED OPERATING CONDITIONS (Unless otherwise noted, Ta = –20 ~ +75°C)
V
mA
6
50
VCC
VCC–3.5
5
—
—
—
4
0
VCC–0.5
0
V
mA
µA
V
—
ICEO = 100µA
VCC = 6V, VI = 0.5V
VCC = 4V, VI = 0.5V, IC = 1.25A
VCC = 4V, VI = 0.5V, IC = 0.7A
VI = VCC–3.5V
VI = VCC–6V
VR = 50V
IF = 1.25A, VCC open
VCC = 4V, VCE = 4V, IC = 1A, Ta = 25°C
V
(BR) CEO
ICC
IR
VF
hFE
Symbol UnitParameter Test conditions Limits
min typ+max
V
V
V
V
IC
0
0
—
—
1.25
0.7 A
VCE (sat)
II
50
—
—
—
—
—
—
—
4000
—
3.0
1.6
1.1
–0.3
–0.58
—
1.6
30000
—
4.5
2.2
1.7
–0.6
–0.95
100
2.3
—
ns
ns
ton
toff
—
—190
5300 —
—
SWITCHING CHARACTERISTICS (Unless otherwise noted, Ta = 25°C)
Symbol UnitParameter Test conditions Limits
min typ max
TIMING DIAGRAMNOTE 1 TEST CIRCUIT
PG
50ΩCL
OPEN
VCC VO
RL
INPUT
OUTPUT
(1) Pulse generator (PG) characteristics : PRR = 1kHz,
tw = 10µs, tr = 6ns, tf = 6ns, ZO = 50Ω
VI = 0.5 to 4V
(2) Input-output conditions : RL = 8.3Ω, VO = 10V, VCC = 4V
(3) Electrostatic capacity CL includes floating capacitance at
connections and input capacitance at probes
Measured device
VCC
VO
VIH
VIL
Parameter Limits
Symbol Unit
Supply voltage
Output voltage
min typ max
“H” input voltage
“L” input voltage
VCC = 5V, Duty Cycle
P : no more than 18%
FP : no more than 9%
VCC = 5V, Duty Cycle
P : no more than 4%
FP : no more than 2%
Collector current
(Current per 1 cir-
cuit when 4 circuits
are coming on si-
multaneously)
ELECTRICAL CHARACTERISTICS (Unless otherwise noted, Ta = –20 ~ +75°C)
Collector-emitter breakdown voltage
Supply current (One circuit coming on)
Clamping diode reverse current
Clamping diode forward voltage
DC amplification factor
Collector-emitter saturation voltage
Input current
+ : The typical values are those measured under ambient temperature (Ta) of 25°C. There is no guarantee that these values are obtained under any
conditions.
CL = 15pF (note 1)
ton
50% 50%
50% 50%
toff
INPUT
OUTPUT
Turn-on time
Turn-off time
Aug. 1999
MITSUBISHI SEMICONDUCTOR <TRANSISTOR ARRAY>
M54567P/FP
4-UNIT 1.5A DARLINGTON TRANSISTOR ARRAY WITH CLAMP DIODE
TYPICAL CHARACTERISTICS
Duty-Cycle-Collector Characteristics
(M54567P)
Duty cycle (%)
➁
➂
➀
➃
Collector current Ic (A)
0
1.0
0.5
1.5
2.0
020 40 60 80 100
Duty cycle (%)
➀
➁
➃
➂
Collector current Ic (A)
Duty-Cycle-Collector Characteristics
(M54567P)
0
1.0
0.5
1.5
2.0
020 40 60 80 100
Duty cycle (%)
➀
➁➂
➃
Collector current Ic (A)
Duty-Cycle-Collector Characteristics
(M54567FP)
0
1.0
0.5
1.5
2.0
0
1.0
0.5
1.5
2.0
020 40 60 80 100
Duty-Cycle-Collector Characteristics
(M54567FP)
Duty cycle (%)
➁
➂
➀
➃
Collector current Ic (A)
020406080100
Thermal Derating Factor Characteristics
Ambient temperature Ta (°C)
M54567FP
M54567P
Power dissipation Pd (W)
0
0
0.5
1.0
1.5
2.0
25 50 75 100
Output Saturation Voltage
Collector Current Characteristics
Output saturation voltage VCE (sat) (V)
0
0.8
0.4
1.2
1.6
00.5 1.0 1.5 2.0
Collector current Ic (A)
V
CC
= 4V
V
I
= 0.5V
Ta = 75°C
Ta = 25°C
Ta = –20°C
•The collector current values
represent the current per circuit.
•Repeated frequency ≥ 10Hz
•The value in the circle represents the
value of the simultaneously-operated circuit.
•The collector current values
represent the current per circuit.
•Repeated frequency ≥ 10Hz
•The value in the circle represents the
value of the simultaneously-operated
circuit.
•V
CC
= 5V
•Ta = 75°C
•The collector current values
represent the current per circuit.
•Repeated frequency ≥ 10Hz
•The value in the circle represents the
value of the simultaneously-operated
circuit.
•V
CC
= 5V
•Ta = 75°C
•The collector current values
represent the current per circuit.
•Repeated frequency ≥ 10Hz
•The value in the circle represents the
value of the simultaneously-operated
circuit.
•V
CC
= 5V
•Ta = 25°C
•V
CC
= 5V
•Ta = 25°C
Aug. 1999
MITSUBISHI SEMICONDUCTOR <TRANSISTOR ARRAY>
M54567P/FP
4-UNIT 1.5A DARLINGTON TRANSISTOR ARRAY WITH CLAMP DIODE
Input Characteristics
Supply voltage-Input voltage V
CC–
V
I
(V)
0
–0.4
–0.2
–0.6
–0.8
–1.0
012345
Input current I
I
(mA)
V
CC
= 5V
Ta = 75°C
Ta = 25°C
Ta = –20°C
Supply Current Characteristics
Supply voltage V
CC
(V)
0
4.0
2.0
6.0
8.0
10.0
0246810
Supply current Icc (mA)
V
I
= 0.5V
Ta = 75°C
Ta = 25°C
Ta = –20°C
Clamping Diode Characteristics
Forward bias voltage V
F
(V)
0
1.0
0.5
1.5
2.0
00.5 1.0 1.5 2.0
Forward bias current I
F
(A)
Ta = 75°C
Ta = 25°C
Ta = –20°C
Grounded Emitter Transfer Characteristics
Supply voltage-Input voltage V
CC–
V
I
(V)
0
0.8
0.4
1.2
1.6
00.5 1.0 1.5 2.0
Collector current Ic (A)
V
CC
= 4V
V
CE
= 4V
Ta = 75°C
Ta = 25°C
Ta = –20°C
DC Amplification Factor
Collector Current Characteristics
Collector current Ic (mA)
10
1
10
4
V
CC
= 4V
V
CE
= 4V
Ta = 25°C
Ta = 75°C
Ta = –20°C
5
3
2
7
5
3
2
7
10
5
5
3
2
7
10
4
10
3
10
2
23 57 23 57
10
3
23 57
10
2
DC amplification factor h
FE
