STGB30V60DF, STGP30V60DF, STGW30V60DF, STGWT30V60DF Trench gate field-stop IGBT, V series 600 V, 30 A very high speed Datasheet - production data Features TAB TAB * Maximum junction temperature: TJ = 175 C * Tail-less switching off 3 3 1 1 DPAK TO-220 2 * VCE(sat) = 1.85 V (typ.) @ IC = 30 A * Tight parameters distribution * Safe paralleling TAB * Low thermal resistance 2 3 3 * Very fast soft recovery antiparallel diode 2 1 1 Applications TO-3P TO-247 Figure 1. Internal schematic diagram * Photovoltaic inverters * Uninterruptible power supply * Welding C (2, TAB) * Power factor correction * Very high frequency converters Description G (1) This device is an IGBT developed using an advanced proprietary trench gate field stop structure. The device is part of the V series of IGBTs, which represent an optimum compromise between conduction and switching losses to maximize the efficiency of very high frequency converters. Furthermore, a positive VCE(sat) temperature coefficient and very tight parameter distribution result in safer paralleling operation. E (3) Table 1. Device summary Order codes Marking Package Packaging STGB30V60DF GB30V60DF DPAK Tape and reel STGP30V60DF GP30V60DF TO-220 Tube STGW30V60DF GW30V60DF TO-247 Tube STGWT30V60DF GWT30V60DF TO-3P Tube October 2013 This is information on a product in full production. DocID024361 Rev 4 1/22 www.st.com 22 Electrical ratings 1 STGB30V60DF, STGP30V60DF, STGW30V60DF, STGWT30V60DF Electrical ratings Table 2. Absolute maximum ratings Symbol Value Unit Collector-emitter voltage (VGE = 0) 600 V IC Continuous collector current at TC = 25 C 60 A IC Continuous collector current at TC = 100 C 30 A ICP(1) Pulsed collector current 120 A VGE Gate-emitter voltage 20 V IF Continuous forward current at TC = 25 C 60 A IF Continuous forward current at TC = 100 C 30 A IFP(1) Pulsed forward current 120 A PTOT Total dissipation at TC = 25 C 258 W TSTG Storage temperature range - 55 to 150 C Operating junction temperature - 55 to 175 C Value Unit VCES TJ Parameter 1. Pulse width limited by maximum junction temperature. Table 3. Thermal data Symbol 2/22 Parameter RthJC Thermal resistance junction-case IGBT 0.58 C/W RthJC Thermal resistance junction-case diode 2.08 C/W RthJA Thermal resistance junction-ambient 50 C/W DocID024361 Rev 4 STGB30V60DF, STGP30V60DF, STGW30V60DF, STGWT30V60DF 2 Electrical characteristics Electrical characteristics TJ = 25 C unless otherwise specified. Table 4. Static characteristics Symbol Parameter Test conditions Collector-emitter V(BR)CES breakdown voltage (VGE = 0) IC = 2 mA Min. VGE = 15 V, IC = 30 A Collector-emitter saturation TJ = 125 C voltage VGE = 15 V, IC = 30 A TJ = 175 C Forward on-voltage Unit V 1.85 2.3 2.15 V 2.35 IF = 30 A VF Max. 600 VGE = 15 V, IC = 30 A VCE(sat) Typ. 2 2.6 V IF = 30 A, TJ = 125 C 1.7 V IF = 30 A, TJ = 175 C 1.6 V VGE(th) Gate threshold voltage VCE = VGE, IC = 1 mA ICES Collector cut-off current (VGE = 0) IGES Gate-emitter leakage current (VCE = 0) 5 6 7 V VCE = 600 V 25 A VGE = 20 V 250 nA Table 5. Dynamic characteristics Symbol Parameter Cies Input capacitance Coes Output capacitance Cres Reverse transfer capacitance Qg Total gate charge Test conditions VCE = 25 V, f = 1 MHz, VGE = 0 VCC = 480 V, IC = 30 A, VGE = 15 V, see Figure 29 Qge Gate-emitter charge Qgc Gate-collector charge DocID024361 Rev 4 Min. Typ. Max. Unit - 3750 - pF - 120 - pF - 77 - pF - 163 - nC - 28 - nC - 72 - nC 3/22 Electrical characteristics STGB30V60DF, STGP30V60DF, STGW30V60DF, STGWT30V60DF Table 6. IGBT switching characteristics (inductive load) Symbol td(on) tr (di/dt)on td(off) tf Test conditions Min. Typ. Max. Unit Turn-on delay time - 45 - ns Current rise time - 16 - ns - 1500 - A/s - 189 - ns - 19 - ns Turn-on current slope VCE = 400 V, IC = 30 A, RG = 10 , VGE = 15 V, see Figure 28 Turn-off delay time Current fall time Eon(1) Turn-on switching losses - 383 - J Eoff(2) Turn-off switching losses - 233 - J Total switching losses - 616 - J Turn-on delay time - 42 - ns Current rise time - 17 - ns Turn-on current slope - 1337 - A/s - 193 - ns - 32 - ns Ets td(on) tr (di/dt)on td(off) tf VCE = 400 V, IC = 30 A, RG = 10 , VGE = 15 V, TJ = 175 C, see Figure 28 Turn-off delay time Current fall time Eon(1) Turn-on switching losses - 794 - J Eoff(2) Turn-off switching losses - 378 - J Total switching losses - 1172 - J Ets 1. Parameter Energy losses include reverse recovery of the diode. 2. Turn-off losses include also the tail of the collector current. Table 7. Diode switching characteristics (inductive load) Symbol 4/22 Parameter Test conditions Min. Typ. Max. Unit - 53 - ns - 384 - nC - 14.5 - A - 788 - A/s trr Reverse recovery time Qrr Reverse recovery charge Irrm Reverse recovery current dIrr/ /dt Peak rate of fall of reverse recovery current during tb Err Reverse recovery energy - 104 - J trr Reverse recovery time - 104 - ns Qrr Reverse recovery charge - 1352 - nC Irrm Reverse recovery current - 26 - A dIrr/ /dt Peak rate of fall of reverse recovery current during tb - 310 - A/s Err Reverse recovery energy - 407 - J IF = 30 A, VR = 400 V, di/dt=1000 A/s, VGE = 15 V, (see Figure 28) IF = 30 A, VR = 400 V, di/dt=1000 A/s, VGE = 15 V, TJ = 175 C, (see Figure 28) DocID024361 Rev 4 STGB30V60DF, STGP30V60DF, STGW30V60DF, STGWT30V60DF 2.1 Electrical characteristics Electrical characteristics (curves) Figure 2. Power dissipation vs. case temperature AM17409v1 Ptot (W) Figure 3. Collector current vs. case temperature AM17410v1 IC (A) 60 250 50 200 40 150 30 100 20 50 0 0 10 25 50 0 0 75 100 125 150 175 TC(C) Figure 4. Output characteristics (TJ=25C) 25 50 75 100 125 150 175 Figure 5. Output characteristics (TJ=175C) AM17411v1 IC (A) 120 VGE=15V 100 AM17412v1 IC (A) 120 13V VGE=15V 13V 100 11V 80 80 60 60 9V 40 20 TC(C) 11V 9V 40 20 7V 0 0 1 2 3 VCE(V) 4 Figure 6. VCE(sat) vs. junction temperature AM17413v1 VCE(sat) (V) 3.2 VGE=15V IC=60A 3.0 1 3 2 4 VCE(V) Figure 7. VCE(sat) vs. collector current VCE(sat) (V) 3.2 3.0 AM17414v1 Tj=175C VGE=15V 2.8 2.6 2.8 2.6 IC=30A 2.4 2.2 2.0 IC=15A 1.8 1.6 1.4 1.2 -50 0 0 0 50 100 150 TC(C) Tj=25C 2.4 2.2 2.0 1.8 1.6 1.4 1.2 1.0 0.8 0 DocID024361 Rev 4 Tj=-40C 10 20 30 40 50 60 IC(A) 5/22 Electrical characteristics STGB30V60DF, STGP30V60DF, STGW30V60DF, STGWT30V60DF Figure 8. Collector current vs. switching frequency Figure 9. Forward bias safe operating area AM17415v1 80 TC=80C 100 70 60 AM17416v1 IC (A) IC (A) 10s TC=100C 10 50 1ms 40 1 30 20 10 100s 0.1 rectangular current shape, (duty cycle=0.5, Vcc= 400V Rg=10, Vge=0/15V, Tj=175 C) 0 1 f(kHz) 10 Figure 10. Transfer characteristics 0.01 1 AM17418v1 VF(A) Tj=-40C Tj=-40C 100 VCE(V) 100 10 Figure 11. Diode VF vs. forward current AM17417v1 IC (A) Single pulse, Tc=25C Tj<175C, VGE=15V Tj=175C 2.3 Tj=25C 80 Tj=25C 1.9 60 Tj=175C 40 1.5 20 0 7 8 9 10 11 VGE(V) Figure 12. Normalized VGE(th) vs junction temperature AM17419v1 VGE(th) (norm) VCE=VGE IC=1mA 1.1 10 20 30 40 60 IF(A) 50 Figure 13. Normalized V(BR)CES vs. junction temperature AM17420v1 V(BR)CES (norm) IC=2mA 1.1 1.0 0.9 1.0 0.8 0.7 0.6 -50 6/22 0 50 100 150 TC(C) 0.9 -50 DocID024361 Rev 4 0 50 100 150 TC(C) STGB30V60DF, STGP30V60DF, STGW30V60DF, STGWT30V60DF Figure 14. Capacitance variations Figure 15. Gate charge vs. gate-emitter voltage AM17421v1 C(pF) Electrical characteristics 10000 AM17422v1 VGE(V) 16 Cies 14 12 1000 10 8 Coes 6 Cres 100 4 2 10 0.1 10 1 Figure 16. Switching losses vs. collector current AM17423v1 E(J) Eon VCC=400V, VGE=15V Rg=10, Tj=175C 2000 1800 0 0 VCE(V) 50 25 75 100 125 150 175 Qg(nC) Figure 17. Switching losses vs. gate resistance AM17424v1 E(J) VCC=400V, VGE=15V IC=30A, Tj=175C 1200 Eon 1600 1000 1400 1200 800 1000 Eoff 800 Eoff 600 600 400 400 200 0 0 200 10 20 30 40 50 60 IC(A) Figure 18. Switching losses vs. junction temperature AM17425v1 E(J) VCC=400V, VGE=15V IC=30A, Rg=10 800 Eon 0 20 30 40 Rg() Figure 19. Switching losses vs. collector emitter voltage AM17426v1 E(J) 1100 700 10 Eon VGE=15V, Tj=175C IC=30A, Rg=10 900 600 700 500 Eoff 400 500 Eoff 300 300 200 100 0 25 50 75 100 125 150 TJ(C) 100 150 DocID024361 Rev 4 200 250 300 350 400 450 VCE(V) 7/22 Electrical characteristics STGB30V60DF, STGP30V60DF, STGW30V60DF, STGWT30V60DF Figure 20. Switching times vs. collector current t(ns) AM17427v1 VCC=400V, VGE=15V Figure 21. Switching times vs. gate resistance 1000 Tj=175C, Rg=10 AM17428v1 t(ns) tdoff VCC=400V, VGE=15V Tj=175C, IC=30A tdoff 100 tdon tr 100 tdon tr tf tf 10 0 20 10 30 40 50 IC(A) 60 Figure 22. Reverse recovery current vs. diode current slope AM17429v1 Irm(A) Tj=175C Vr=400V IF=30A 40 10 0 20 10 Tj=25C 40 Rg() Figure 23. Reverse recovery time vs. diode current slope AM17430v1 trr(s) Vr=400V IF=30A 200 30 30 150 20 100 10 Tj=175C 50 Tj=25C 0 0 500 1000 1500 Figure 24. Reverse recovery charge vs. diode current slope AM17431v1 Qrr(nC) Vr=400V IF=30A 0 0 di/dt (A/s) 500 1500 2000 2500 di/dt (A/s) Figure 25. Reverse recovery energy vs. diode current slope AM17432v1 Err(J) Vr=400V IF=30A Tj=175C 1000 2000 1000 Tj=175C 800 1500 600 Tj=25C 1000 400 Tj=25C 500 0 0 8/22 500 1000 200 1500 2000 2500 di/dt (A/s) DocID024361 Rev 4 0 0 500 1000 1500 2000 2500 di/dt (A/s) STGB30V60DF, STGP30V60DF, STGW30V60DF, STGWT30V60DF Electrical characteristics Figure 26. Thermal data for IGBT ZthTO2T_B K =0.5 0.2 0.1 0.05 -1 10 0.02 Zth=k Rthj-c =tp/t 0.01 Single pulse tp t -2 10 -5 10 -4 10 -3 10 -2 10 -1 10 tp (s) Figure 27. Thermal data for diode DocID024361 Rev 4 9/22 Test circuits 3 STGB30V60DF, STGP30V60DF, STGW30V60DF, STGWT30V60DF Test circuits Figure 28. Test circuit for inductive load switching Figure 29. Gate charge test circuit AM01504v1 Figure 30. Switching waveform AM01505v1 Figure 31. Diode recovery time waveform VG IF trr 90% VCE Qrr di/dt 90% 10% ta tb 10% Tr(Voff) t Tcross 90% IRRM IRRM IC 10% Td(off) Td(on) Tr(Ion) Ton Tf Toff VF dv/dt AM01506v1 10/22 DocID024361 Rev 4 AM01507v1 STGB30V60DF, STGP30V60DF, STGW30V60DF, STGWT30V60DF 4 Package mechanical data Package mechanical data In order to meet environmental requirements, ST offers these devices in different grades of ECOPACK(R) packages, depending on their level of environmental compliance. ECOPACK(R) specifications, grade definitions and product status are available at: www.st.com. ECOPACK is an ST trademark. Table 8. DPAK (TO-263) mechanical data mm Dim. Min. Typ. Max. A 4.40 4.60 A1 0.03 0.23 b 0.70 0.93 b2 1.14 1.70 c 0.45 0.60 c2 1.23 1.36 D 8.95 9.35 D1 7.50 E 10 E1 8.50 10.40 e 2.54 e1 4.88 5.28 H 15 15.85 J1 2.49 2.69 L 2.29 2.79 L1 1.27 1.40 L2 1.30 1.75 R V2 0.4 0 8 DocID024361 Rev 4 11/22 Package mechanical data STGB30V60DF, STGP30V60DF, STGW30V60DF, STGWT30V60DF Figure 32. DPAK (TO-263) drawing 0079457_T Figure 33. DPAK footprint(a) 16.90 12.20 5.08 1.60 3.50 9.75 a. All dimensions are in millimeters 12/22 DocID024361 Rev 4 Footprint STGB30V60DF, STGP30V60DF, STGW30V60DF, STGWT30V60DF Package mechanical data Table 9. TO-220 type A mechanical data mm Dim. Min. Typ. Max. A 4.40 4.60 b 0.61 0.88 b1 1.14 1.70 c 0.48 0.70 D 15.25 15.75 D1 1.27 E 10 10.40 e 2.40 2.70 e1 4.95 5.15 F 1.23 1.32 H1 6.20 6.60 J1 2.40 2.72 L 13 14 L1 3.50 3.93 L20 16.40 L30 28.90 P 3.75 3.85 Q 2.65 2.95 DocID024361 Rev 4 13/22 Package mechanical data STGB30V60DF, STGP30V60DF, STGW30V60DF, STGWT30V60DF Figure 34. TO-220 type A drawing 0015988_typeA_Rev_S 14/22 DocID024361 Rev 4 STGB30V60DF, STGP30V60DF, STGW30V60DF, STGWT30V60DF Package mechanical data Table 10. TO-247 mechanical data mm. Dim. Min. Typ. Max. A 4.85 5.15 A1 2.20 2.60 b 1.0 1.40 b1 2.0 2.40 b2 3.0 3.40 c 0.40 0.80 D 19.85 20.15 E 15.45 15.75 e 5.30 L 14.20 14.80 L1 3.70 4.30 5.45 L2 5.60 18.50 P 3.55 3.65 R 4.50 5.50 S 5.30 5.50 DocID024361 Rev 4 5.70 15/22 Package mechanical data STGB30V60DF, STGP30V60DF, STGW30V60DF, STGWT30V60DF Figure 35. TO-247 drawing 0075325_G 16/22 DocID024361 Rev 4 STGB30V60DF, STGP30V60DF, STGW30V60DF, STGWT30V60DF Package mechanical data Table 11. TO-3P mechanical data mm Dim. Min. Typ. Max. A 4.60 5 A1 1.45 1.50 1.65 A2 1.20 1.40 1.60 b 0.80 1 1.20 b1 1.80 2.20 b2 2.80 3.20 c 0.55 0.60 0.75 D 19.70 19.90 20.10 D1 E 13.90 15.40 15.80 E1 13.60 E2 9.60 e 5.15 5.45 5.75 L 19.50 20 20.50 L1 3.50 L2 18.20 oP 3.10 18.40 18.60 3.30 Q 5 Q1 3.80 DocID024361 Rev 4 17/22 Package mechanical data STGB30V60DF, STGP30V60DF, STGW30V60DF, STGWT30V60DF Figure 36. TO-3P drawing 8045950_A 18/22 DocID024361 Rev 4 STGB30V60DF, STGP30V60DF, STGW30V60DF, STGWT30V60DF 5 Packaging mechanical data Packaging mechanical data Table 12. DPAK (TO-263) tape and reel mechanical data Tape Reel mm mm Dim. Dim. Min. Max. A0 10.5 10.7 A B0 15.7 15.9 B 1.5 D 1.5 1.6 C 12.8 D1 1.59 1.61 D 20.2 E 1.65 1.85 G 24.4 F 11.4 11.6 N 100 K0 4.8 5.0 T P0 3.9 4.1 P1 11.9 12.1 Base qty 1000 P2 1.9 2.1 Bulk qty 1000 R 50 T 0.25 0.35 W 23.7 24.3 DocID024361 Rev 4 Min. Max. 330 13.2 26.4 30.4 19/22 Packaging mechanical data STGB30V60DF, STGP30V60DF, STGW30V60DF, STGWT30V60DF Figure 37. Tape 10 pitches cumulative tolerance on tape +/- 0.2 mm T P0 Top cover tape P2 D E F B1 W K0 B0 For machine ref. only including draft and radii concentric around B0 A0 P1 D1 User direction of feed R Bending radius User direction of feed AM08852v1 Figure 38. Reel T REEL DIMENSIONS 40mm min. Access hole At slot location B D C N A Full radius Tape slot in core for tape start 25 mm min. width G measured at hub AM08851v2 20/22 DocID024361 Rev 4 STGB30V60DF, STGP30V60DF, STGW30V60DF, STGWT30V60DF 6 Revision history Revision history Table 13. Document revision history Date Revision Changes 14-Mar-2013 1 Initial release. 03-May-2013 2 Added: Section 2.1: Electrical characteristics (curves) 04-Jun-2013 3 Added minimum and maximum values for VGE(th) in Table 4: Static characteristics. 08-Oct-2013 4 Updated title, features and description in cover page. 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