This is information on a product in full production.
October 2013 DocID024361 Rev 4 1/22
22
STGB30V60DF, STGP30V60DF,
STGW30V60DF, STGWT30V60DF
Trench gate field-stop IGBT, V series
600 V, 30 A very high speed
Datasheet
-
production da ta
Figure 1. Internal schematic diagram
Features
•Maximum junction temperature: T
J
= 175 °C
•Tail-less switching off
•V
CE(sat)
= 1.85 V (typ.) @ I
C
= 30 A
•Tight parameters distribution
•Safe paralleling
•Low thermal resistance
•Very fast soft recovery antiparallel diode
Applications
•Photovoltaic inverters
•Uninterruptible power supply
•Welding
•Power factor correction
•Very high frequency converters
Description
This device is an IGBT developed using an
advanced proprietary trench gate field stop
structure. The device is part of the V series of
IGBTs, which represent an optimum compromise
between conduction and switching losses to
maximize the efficiency of very high frequency
converters. Furthermore, a positive V
CE(sat)
temperature coefficient and very tight parameter
distribution result in safer paralleling operation.
C (2, TAB)
G (1)
E (3)
TO-247 TO-3P
1
2
3
123
1
3
TA B
D²PAK
123
TA B
TO-220
TAB
Table 1. Device summary
Order code s Marking Package Packaging
STGB30V60DF GB30V60DF D²PAK Tape and reel
STGP30V60DF GP30V60DF TO-220 Tube
STGW30V60DF GW30V60DF TO-247 Tube
STGWT30V60DF GWT30V60DF TO-3P Tube
www.st.com
Electrical ratings STGB30V60DF, STGP30V60DF, STGW30V60DF, STGWT30V60DF
2/22 DocID024361 Rev 4
1 Electrical ratings
Table 2. Absolute m aximum ratings
Symbol Parameter Value Unit
V
CES
Collector-emitter voltage (V
GE
= 0) 600 V
I
C
Continuous collector current at T
C
= 25 °C 60 A
I
C
Continuous collector current at T
C
= 100 °C 30 A
I
CP(1)
1. Pulse width limited by maximum junction temperature.
Pulsed collector current 120 A
V
GE
Gate-emitter voltage ±20 V
I
F
Continuous forward current at T
C
= 25 °C 60 A
I
F
Continuous forward current at T
C
= 100 °C 30 A
I
FP(1)
Pulsed forward current 120 A
P
TOT
Total dissipation at T
C
= 25 °C 258 W
T
STG
Storage temperature range - 55 to 150 °C
T
J
Operating junction temperature - 55 to 175 °C
Table 3. Thermal data
Symbol Parameter Value Unit
R
thJC
Thermal resistance junction-case IGBT 0.58 °C/W
R
thJC
Thermal resistance junction-case diode 2.08 °C/W
R
thJA
Thermal resistance junction-ambient 50 °C/W
DocID024361 Rev 4 3/22
STGB30V60DF, STGP30V60DF, STGW30V60DF, STGWT30V60DF Electrical characteristics
2 Electrical characteristics
T
J
= 25 °C unless otherwise specified.
Table 4. Static characteristics
Symbol Parameter Test conditions Min. Typ. Max. Unit
V
(BR)CES
Collector-emitter
breakdown voltage
(V
GE
= 0)
I
C
= 2 mA 600 V
V
CE(sat)
Collector-emitter saturation
voltage
V
GE
= 15 V, I
C
= 30 A 1.85 2.3
V
V
GE
= 15 V, I
C
= 30 A
T
J
= 125 °C 2.15
V
GE
= 15 V, I
C
= 30 A
T
J
= 175 °C 2.35
V
F
Forward on-voltage
I
F
= 30 A 2 2.6 V
I
F
= 30 A, T
J
= 125 °C 1.7 V
I
F
= 30 A, T
J
= 175 °C 1.6 V
V
GE(th)
Gate threshold voltage V
CE
= V
GE
, I
C
= 1 mA 5 6 7 V
I
CES
Collector cut-off current
(V
GE
= 0) V
CE
= 600 V 25 μA
I
GES
Gate-emitter leakage
current (V
CE
= 0) V
GE
= ± 20 V 250 nA
Table 5. Dynamic characteristics
Symbol Parameter Test conditions Min. Typ. Max. Unit
C
ies
Input capacitance
V
CE
= 25 V, f = 1 MHz,
V
GE
= 0
-3750- pF
C
oes
Output capacitance - 120 - pF
C
res
Reverse transfer
capacitance -77-pF
Q
g
Total gate charge
V
CC
= 480 V, I
C
= 30 A,
V
GE
= 15 V, see Figure 29
-163-nC
Q
ge
Gate-emitter charge - 28 - nC
Q
gc
Gate-collector charge - 72 - nC
Electrical characteristics STGB30V60DF, STGP30V60DF, STGW30V60DF, STGWT30V60DF
4/22 DocID024361 Rev 4
Table 6. IGBT switching characteristics (inductive load)
Symbol Parameter Test conditions Min. Typ. Max. Unit
t
d(on)
Turn-on delay time
V
CE
= 400 V, I
C
= 30 A,
R
G
= 10 Ω, V
GE
= 15 V,
see Figure 28
-45-ns
t
r
Current rise time - 16 - ns
(di/dt)
on
Turn-on current slope - 1500 - A/μs
t
d
(
off
) Turn-off delay time - 189 - ns
t
f
Current fall time - 19 - ns
E
on(1)
1. Energy losses include reverse recovery of the diode.
Turn-on switching losses - 383 - μJ
E
off(2)
2. Turn-off losses include also the tail of the collector current.
Turn-off switching losses - 233 - μJ
E
ts
Total switching losses - 616 - μJ
t
d(on)
Turn-on delay time
V
CE
= 400 V, I
C
= 30 A,
R
G
= 10 Ω, V
GE
= 15 V,
T
J
= 175 °C, see Figure 28
-42-ns
t
r
Current rise time - 17 - ns
(di/dt)
on
Turn-on current slope - 1337 - A/μs
t
d
(
off
) Turn-off delay time - 193 - ns
t
f
Current fall time - 32 - ns
E
on(1)
Turn-on switching losses - 794 - μJ
E
off(2)
Turn-off switching losses - 378 - μJ
E
ts
Total switching losses - 1172 - μJ
Table 7. Diode switching characteristics (inductive load)
Symbol Parameter Test conditions Min. Typ. Max. Unit
t
rr
Reverse recovery time
I
F
= 30 A, V
R
= 400 V,
di/dt=1000 A/μs,
V
GE
= 15 V,
(see Figure 28)
-53-ns
Q
rr
Reverse recovery charge - 384 - nC
I
rrm
Reverse recovery current - 14.5 - A
dI
rr/
/dt Peak rate of fall of reverse
recovery current during t
b
- 788 - A/μs
E
rr
Reverse recovery energy - 104 - μJ
t
rr
Reverse recovery time
I
F
= 30 A, V
R
= 400 V,
di/dt=1000 A/μs,
V
GE
= 15 V,
T
J
= 175 °C, (see Figure 28)
- 104 - ns
Q
rr
Reverse recovery charge - 1352 - nC
I
rrm
Reverse recovery current - 26 - A
dI
rr/
/dt Peak rate of fall of reverse
recovery current during t
b
- 310 - A/μs
E
rr
Reverse recovery energy - 407 - μJ
DocID024361 Rev 4 5/22
STGB30V60DF, STGP30V60DF, STGW30V60DF, STGWT30V60DF Electrical characteristics
2.1 Electrical chara c teristics (cur ves)
Figure 2. Power dissipation vs. case
temperature Figure 3. Collector current vs. case temperature
Figure 4. Output characteristics (T
J
=25°C) Figure 5. Output characteristics (T
J
=175°C)
Figure 6. V
CE(sat)
vs. junction temperature Figure 7. V
CE(sat)
vs. collector current
P
tot
150
100
50
0
050 100
(W)
25 75 125
200
150 175 T
C
(°C)
250
AM17409v1
I
C
30
20
10
0
050 T
C
(°C)
100
(A)
25 75 125
40
50
150 175
60
AM17410v1
I
C
80
60
20
0
013
(A)
24
100
V
CE
(V)
40 9V
11V
13V
VGE=15V
120
AM17411v1
I
C
80
60
20
0
013
(A)
24
100
120
V
CE
(V)
40
9V
11V
13V
7V
VGE=15V
AM17412v1
V
CE(sat)
2.0
1.8
1.4
1.2
-50 0100
(V)
50 150
2.2
2.4
T
C
(°C)
1.6
2.6
2.8
V
GE
=15V I
C
=60A
I
C
=30A
I
C
=15A
3.0
3.2
AM17413v1
1.6
1.4
1.0
0.8010 30
20 40
1.8
2.0
I
C
(A)
1.2
2.2
2.4
V
GE
=15V T
j
=175°C
T
j
=25°C
T
j
=-40°C
60
50
V
CE(sat)
(V)
2.6
2.8
3.0
3.2
AM17414v1
Electrical characteristics STGB30V60DF, STGP30V60DF, STGW30V60DF, STGWT30V60DF
6/22 DocID024361 Rev 4
Figure 8. Collector current vs. switching
frequency Figure 9. Forward bias safe operating area
Figure 10. Transfer characteristics Figure 11. Diode V
F
vs. forward curren t
Figure 12. Normalized V
GE(th)
vs junction
temperature Fig ure 13. Normali ze d V
(BR)CES
vs. junction
temperature
I
C
40
30
10
0
1
(A)
10
50
60
f(kHz)
20
70
80 T
C
=80°C
T
C
=100°C
rectangular current shape,
(duty cycle=0.5, Vcc= 400V Rg=10Ω,
Vge=0/15V
, Tj=175 °C)
AM17415v1
I
C
100
10
0.1
0.01
1
(A)
10 VCE(V)
1
10μs
100μs
1ms
100
Single pulse, Tc=25°C
Tj<175°C, VGE=15V
AM17416v1
I
C
80
60
20
0
7
(A)
8VGE(V)
40
Tj=175°C
Tj=25°C
Tj=-40°C
9
100
10 11
AM17417v1
V
F
1.9
1.1
10
(A)
20 IF(A)
1.5
Tj=175°C
Tj=25°C
Tj=-40°C
30
2.3
40 50 60
AM17418v1
V
GE(th)
0.8
0.6
-50
(norm)
TC(°C)
0.7
0
0.9
1.0
50 100 150
VCE=VGE
IC=1mA
AM17419v1
V
(BR)CES
1.1
0.9
-50
(norm)
TC(°C)
1.0
050 100 150
I
C
=2mA
AM17420v1
DocID024361 Rev 4 7/22
STGB30V60DF, STGP30V60DF, STGW30V60DF, STGWT30V60DF Electrical characteristics
Figure 14. Capacitance variations Figure 15. Gate charge vs. gate-emitter voltage
Figure 16. Switching losses vs. collector
current Figure 17. Switching losses vs. gate resistance
Figure 18. Switching losses vs. junction
temperature F igure 19. Switch ing losses vs. co llec tor
emitter voltage
C(pF)
10
0.1 VCE(V)
1000
110
100
10000
Cies
Coes
Cres
AM17421v1
VGE(V)
0
0Qg(nC)
50 100
2
150 175
4
6
8
10
12
14
16
25 125
75
AM17422v1
E(μJ)
0
0IC(A)
400
10 20
200
600
30 40
VCC=400V, VGE=15V
Rg=10Ω, Tj=175°C
800
1000
1200
1400
Eon
Eoff
50 60
1600
1800
2000
AM17423v1
E(μJ)
0Rg(Ω)
400
10 20
200
600
30 40
VCC=400V, VGE=15V
IC=30A, Tj=175°C
800
1000
1200
Eon
Eoff
AM17424v1
E(μJ)
25 TJ(°C)
200
50 75
100
300
100 125
VCC=400V, VGE=15V
IC=30A, Rg=10Ω
400
500
600
Eon
Eoff
150
0
700
800
AM17425v1
E(μJ)
150 VCE(V)
500
200 250
100
900
300 350
VGE=15V, Tj=175°C
IC=30A, Rg=10Ω
Eon
Eoff
300
700
1100
400 450
AM17426v1
Electrical characteristics STGB30V60DF, STGP30V60DF, STGW30V60DF, STGWT30V60DF
8/22 DocID024361 Rev 4
Figure 20. Switching times vs. collector current Figure 21. Switching times vs. gate resistance
Figure 22. Reverse recovery current vs. diode
current slope Figure 23. Reverse recovery time vs. diode
current slope
Figure 24. Reverse recovery charge vs. diode
current slope Figure 25. Reverse recovery energy vs. diode
current slope
t(ns)
0IC(A)
10 20
10
30 40
VCC=400V,
Tj=175°C,
VGE=15V
Rg=10Ω
tdoff
tdon
100
tr
tf
50 60
AM17427v1
t(ns)
0Rg(Ω)
10 20
10
30 40
VCC=400V,
Tj=175°C,
VGE=15V
IC=30A
tdoff
tdon
100 tr
tf
1000
AM17428v1
Irm(A)
0di/dt (A/μs)
500
10
1000
Vr=400V
IF=30A
Tj=175°C
20
30
40
01500
Tj=25°C
AM17429v1
trr(μs)
0di/dt (A/μs)
500 1000 1500 2000
Vr=400V
IF=30A
Tj=175°C
50
100
150
200
02500
Tj=25°C
AM17430v1
Qrr(nC)
0di/dt (A/μs)
500 1000 1500 2000
Vr=400V
IF=30A Tj=175°C
500
1000
1500
2000
02500
Tj=25°C
AM17431v1
Err(μJ)
0di/dt (A/μs)
500 1000 1500 2000
Vr=400V
IF=30A
Tj=175°C
200
400
600
800
1000
02500
Tj=25°C
AM17432v1
DocID024361 Rev 4 9/22
STGB30V60DF, STGP30V60DF, STGW30V60DF, STGWT30V60DF Electrical characteristics
Figure 26. Therma l data for IGBT
Figure 27. Thermal data for diode
10
-5
10
-4
10
-3
10
-2
10
-1 t
p
(s)
10
-2
10
-1
K
0.2
0.05
0.02
0.01
0.1
Zth=k Rthj-c
δ=tp/t
tp
t
Single pulse
δ=0.5
ZthTO2T_B
Test circuits STGB30V60DF, STGP30V60DF, STGW30V60DF, STGWT30V60DF
10/22 DocID024361 Rev 4
3 Test circuits
Figure 28. Test circuit for inductive load
switching Figure 29. Gate charge test circuit
Figure 30. Switching waveform Figure 31. Diode recovery time waveform
AM01504v1
AM01505v1
AM01506v1
90%
10%
90%
10%
VG
VCE
ICTd(on)
To n
Tr(Ion)
Td(off)
Toff
Tf
Tr(Voff)
Tcross
90%
10%
AM01507v1
IRRM
IF
di/dt
trr
tatb
Qrr
IRRM
t
VF
dv/dt
DocID024361 Rev 4 11/22
STGB30V60DF, STGP30V60DF, STGW30V60DF, STGWT30V60DF Package mechanical data
4 Package mechanical data
In order to meet environmental requirements, ST offers these devices in different grades of
ECOPACK
®
packages, depending on their level of environmental compliance. ECOPACK
®
specifications, grade definitions and product status are available at: www.st.com.
ECOPACK is an ST trademark.
Table 8. D²PAK (TO-263) mechanical data
Dim. mm
Min. Typ. Max.
A4.40 4.60
A1 0.03 0.23
b0.70 0.93
b2 1.14 1.70
c0.45 0.60
c2 1.23 1.36
D8.95 9.35
D1 7.50
E 10 10.40
E1 8.50
e2.54
e1 4.88 5.28
H 15 15.85
J1 2.49 2.69
L2.29 2.79
L1 1.27 1.40
L2 1.30 1.75
R0.4
V2 0° 8°
Package mechanical data STGB30V60DF, STGP30V60DF, STGW30V60DF, STGWT30V60DF
12/22 DocID024361 Rev 4
Figure 32. D²PAK (TO-263) drawing
Figure 33. D²PAK footprint
(a)
a. All dimensions are in millimeters
0079457_T
16.90
12.20
9.75
3.50
5.08
1.60
Footprint
DocID024361 Rev 4 13/22
STGB30V60DF, STGP30V60DF, STGW30V60DF, STGWT30V60DF Package mechanical data
Table 9. TO-220 type A mechanical data
Dim. mm
Min. Typ. Max.
A4.40 4.60
b0.61 0.88
b1 1.14 1.70
c0.48 0.70
D 15.25 15.75
D1 1.27
E 10 10.40
e2.40 2.70
e1 4.95 5.15
F1.23 1.32
H1 6.20 6.60
J1 2.40 2.72
L13 14
L1 3.50 3.93
L20 16.40
L30 28.90
∅
P3.75 3.85
Q2.65 2.95
Package mechanical data STGB30V60DF, STGP30V60DF, STGW30V60DF, STGWT30V60DF
14/22 DocID024361 Rev 4
Figure 34. TO-220 type A drawing
0015988_typeA_Rev_S
DocID024361 Rev 4 15/22
STGB30V60DF, STGP30V60DF, STGW30V60DF, STGWT30V60DF Package mechanical data
Table 10. TO-247 mechanical data
Dim. mm.
Min. Typ. Max.
A 4.85 5.15
A1 2.20 2.60
b1.0 1.40
b1 2.0 2.40
b2 3.0 3.40
c 0.40 0.80
D 19.85 20.15
E 15.45 15.75
e 5.30 5.45 5.60
L 14.20 14.80
L1 3.70 4.30
L2 18.50
∅P 3.55 3.65
∅R 4.50 5.50
S 5.30 5.50 5.70
Package mechanical data STGB30V60DF, STGP30V60DF, STGW30V60DF, STGWT30V60DF
16/22 DocID024361 Rev 4
Figure 35. TO-2 47 drawing
0075325_G
DocID024361 Rev 4 17/22
STGB30V60DF, STGP30V60DF, STGW30V60DF, STGWT30V60DF Package mechanical data
Table 11. TO-3P mechanical data
Dim. mm
Min. Typ. Max.
A4.60 5
A1 1.45 1.50 1.65
A2 1.20 1.40 1.60
b 0.80 1 1.20
b1 1.80 2.20
b2 2.80 3.20
c 0.55 0.60 0.75
D 19.70 19.90 20.10
D1 13.90
E 15.40 15.80
E1 13.60
E2 9.60
e 5.15 5.45 5.75
L 19.50 20 20.50
L1 3.50
L2 18.20 18.40 18.60
øP 3.10 3.30
Q5
Q1 3.80
Package mechanical data STGB30V60DF, STGP30V60DF, STGW30V60DF, STGWT30V60DF
18/22 DocID024361 Rev 4
Figure 36. TO-3P drawin g
8045950_A
DocID024361 Rev 4 19/22
STGB30V60DF, STGP30V60DF, STGW30V60DF, STGWT30V60DF Packaging mechanical data
5 Packaging mechanical data
Table 12. D²PAK (TO-263) tape and reel mechanical data
Tape Reel
Dim. mm Dim. mm
Min. Max. Min. Max.
A0 10.5 10.7 A 330
B0 15.7 15.9 B 1.5
D 1.5 1.6 C 12.8 13.2
D1 1.59 1.61 D 20.2
E 1.65 1.85 G 24.4 26.4
F 11.4 11.6 N 100
K0 4.8 5.0 T 30.4
P0 3.9 4.1
P1 11.9 12.1 Base qty 1000
P2 1.9 2.1 Bulk qty 1000
R50
T 0.25 0.35
W 23.7 24.3
Packaging mechanical data STGB30V60DF, STGP30V60DF, STGW30V60DF, STGWT30V60DF
20/22 DocID024361 Rev 4
Figure 37. Tape
Figure 38. Reel
P1
A0 D1
P0
F
W
E
D
B0
K0
T
User direction of feed
P2
10 pitches cumulative
tolerance on tape +/- 0.2 mm
User direction of feed
R
Bending radius
B1
For machine ref. only
including draft and
radii concentric around B0
AM08852v1
Top cover
tape
A
D
B
Full radius G measured at hub
C
N
REEL DIMENSIONS
40mm min.
Access hole
At slot location
T
Tape slot
in core for
tape start 25 mm min.
width
AM08851v2
DocID024361 Rev 4 21/22
STGB30V60DF, STGP30V60DF, STGW30V60DF, STGWT30V60DF Revision history
6 Revision history
Table 13. Document revision history
Date Revision Changes
14-Mar-2013 1 Initial release.
03-May-2013 2 Added: Section 2.1: Electrical characterist ics (curves)
04-Jun-2013 3 Added minimum and maximum values for V
GE(th)
in
Table 4: Static
characteristics.
08-Oct-2013 4 Updated title, features and description in cover page.
STGB30V60DF, STGP30V60DF, STGW30V60DF, STGWT30V60DF
22/22 DocID024361 Rev 4
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