IRF60SC241 MOSFET IRMOSFET-StrongIRFET D-PAK7pin Features *VerylowRDS(on) *Highcurrentcarryingcapability *175Coperatingtemperature *Optimizedforbroadestavailabilityfromdistributionpartners Benefits *Reducedconductionlosses *Increasedpowerdensity *Increasedreliabilityversus150Cratedparts *Halogen-freeaccordingtoIEC61249-2-21 Drain tab Productvalidation QualifiedaccordingtoJEDECStandard Gate Pin 1 Source Pin 2-7 Table1KeyPerformanceParameters Parameter Value Unit VDS 60 V RDS(on),typ 0.95 m RDS(on),max 1.3 m ID(SiliconLimited) 363 A ID(PackageLimited) 360 A QG(0V..10V) 311 nC Type/OrderingCode Package IRF60SC241 PG-TO 263-7 Final Data Sheet Marking IRF60SC241 1 RelatedLinks - Rev.2.1,2019-05-08 IRMOSFET-StrongIRFET IRF60SC241 TableofContents Description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 Maximum ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 Thermal characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 Electrical characteristics diagrams . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6 Package Outlines . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10 Revision History . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11 Trademarks . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11 Disclaimer . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11 Final Data Sheet 2 Rev.2.1,2019-05-08 IRMOSFET-StrongIRFET IRF60SC241 1Maximumratings atTA=25C,unlessotherwisespecified Table2Maximumratings Parameter Symbol Continuous drain current Values Unit Note/TestCondition 360 363 256 A VGS=10V,TC=25C VGS=10V,TC=25C(siliconlimited) VGS=10V,TC=100C1) - 1440 A TC=25C - - 799 mJ ID=100A,RGS=50 VGS -20 - 20 V - Power dissipation Ptot - - 417 2.4 W TC=25C TA=25C,RTHJA=62C/W3) Operating and storage temperature Tj,Tstg -55 - 175 C IEC climatic category; DIN IEC 68-1: 55/175/56 Unit Note/TestCondition Min. Typ. Max. ID - - Pulsed drain current1) ID,pulse - Avalanche energy, single pulse2) EAS Gate source voltage 2Thermalcharacteristics Table3Thermalcharacteristics Parameter Symbol Thermal resistance, junction - case, 04) Values Min. Typ. Max. RthJC - - 0.36 C/W - Thermal resistance, junction -Ambient, RthJA 0 - - 62 C/W - RthCS - 0.5 - C/W - Case-to-Sink, Flat Greased Surface 1) See Diagram 3 for more detailed information See Diagram 13 for more detailed information 3) When mounted on 1 square PCB (FR-4 or G-10 Material). For recommended footprint and soldering techniques refer to application note #AN-994: 4) RthJC is measured at TJ approximately 90C. 2) Final Data Sheet 3 Rev.2.1,2019-05-08 IRMOSFET-StrongIRFET IRF60SC241 3Electricalcharacteristics atTj=25C,unlessotherwisespecified Table4Staticcharacteristics Parameter Symbol Drain-source breakdown voltage V(BR)DSS Breakdown voltage temperature coefficient Values Unit Note/TestCondition - V VGS=0V,ID=250uA 43 - mV/C ID=5mA,referencedto25C 2.2 - 3.7 V VDS=VGS,ID=250A IDSS - - 1 150 A VDS=60V,VGS=0V,Tj=25C VDS=60V,VGS=0V,Tj=125C Gate-source leakage current IGSS - - 100 nA VGS=20V,VDS=0V Drain-source on-state resistance RDS(on) - 0.945 1.2 1.30 - m VGS=10V,ID=100A VGS=6V,ID=50A Gate resistance1) RG - 2.3 - - Transconductance gfs - 340 - S |VDS|2|ID|RDS(on)max,ID=100A Unit Note/TestCondition Min. Typ. Max. 60 - dV(BR)DSS/dTj - Gate threshold voltage VGS(th) Zero gate voltage drain current Table5Dynamiccharacteristics Parameter Symbol Values Min. Typ. Ciss - 16000 - pF VGS=0V,VDS=30V,f=1MHz Coss - 1600 - pF VGS=0V,VDS=30V,f=1MHz Reverse transfer capacitance Crss - 1000 - pF VGS=0V,VDS=30V,f=1MHz Turn-on delay time td(on) - 22 - ns VDD=30V,VGS=10V,ID=30A, RG,ext=2.7 Rise time tr - 59 - ns VDD=30V,VGS=10V,ID=30A, RG,ext=2.7 Turn-off delay time td(off) - 227 - ns VDD=30V,VGS=10V,ID=30A, RG,ext=2.7 Fall time tf - 88 - ns VDD=30V,VGS=10V,ID=30A, RG,ext=2.7 Input capacitance1) 1) Output capacitance 1) 1) Max. Defined by design. Not subject to production test. Final Data Sheet 4 Rev.2.1,2019-05-08 IRMOSFET-StrongIRFET IRF60SC241 Table6Gatechargecharacteristics1) Parameter Symbol Gate to source charge Values Unit Note/TestCondition - nC VDD=30V,ID=100A,VGS=0to10V 48 - nC VDD=30V,ID=100A,VGS=0to10V - 95 - nC VDD=30V,ID=100A,VGS=0to10V Qsw - 126 - nC VDD=30V,ID=100A,VGS=0to10V Gate charge total Qg - 311 388 nC VDD=30V,ID=100A,VGS=0to10V Gate plateau voltage Vplateau - 4.8 - V VDD=30V,ID=100A,VGS=0to10V Gate charge total, sync. FET Qg(sync) - 216 - nC VDS=0.1V,VGS=0to10V Output charge1) Qoss - 77 - nC VDD=30V,VGS=0V Unit Note/TestCondition Min. Typ. Max. Qgs - 79 Gate charge at threshold Qg(th) - Gate to drain charge2) Qgd Switching charge 2) Table7Reversediode Parameter Symbol Diode continuous forward current Values Min. Typ. Max. IS - - 347 A TC=25C Diode pulse current IS,pulse - - 1440 A TC=25C Diode forward voltage VSD - 0.86 1.2 V VGS=0V,IF=100A,Tj=25C trr - 43 - ns VR=51V,IF=100A,diF/dt=100A/s Qrr - 58 - nC VR=51V,IF=100A,diF/dt=100A/s Reverse recovery time2) 2) Reverse recovery charge 1) 2) See Gate charge waveforms for parameter definition Defined by design. Not subject to production test. Final Data Sheet 5 Rev.2.1,2019-05-08 IRMOSFET-StrongIRFET IRF60SC241 4Electricalcharacteristicsdiagrams Diagram1:Powerdissipation Diagram2:Draincurrent 450 400 400 350 300 250 ID[A] Ptot[W] 300 200 200 150 100 100 50 0 0 25 50 75 100 125 150 0 175 0 25 50 75 TC[C] 100 125 150 175 TC[C] Ptot=f(TC) ID=f(TC);VGS10V Diagram3:Safeoperatingarea Diagram4:Max.transientthermalimpedance 4 10 103 10 s 100 100 s single pulse 0.01 0.02 0.05 0.1 0.2 0.5 ZthJC[K/W] 102 ID[A] 1 ms 1 10 DC 10 ms 10-1 100 10-2 10-1 10-2 10-1 100 101 102 10-3 10-5 10-4 VDS[V] 10-2 10-1 100 tp[s] ID=f(VDS);TC=25C;D=0;parameter:tp Final Data Sheet 10-3 ZthJC=f(tp);parameter:D=tp/T 6 Rev.2.1,2019-05-08 IRMOSFET-StrongIRFET IRF60SC241 Diagram5:Typ.outputcharacteristics Diagram6:Typ.drain-sourceonresistance 1440 5.0 4.5 V 5V 5.5 V 6V 8V 10 V 12 V 15 V 1260 1080 4.5 4.0 3.5 5.5 V RDS(on)[m] ID[A] 900 720 540 6V 3.0 5V 2.5 2.0 360 1.5 180 0 7V 1.0 0 1 2 3 4 0.5 5 10 V 0 300 600 VDS[V] 900 1200 RDS(on)=f(ID),Tj=25C;parameter:VGS Diagram7:Typ.transfercharacteristics Diagram8:Typ.drain-sourceonresistance 1440 4.0 1260 3.5 1080 3.0 900 2.5 RDS(on)[m] ID[A] ID=f(VDS),Tj=25C;parameter:VGS 720 540 360 2.0 125 C 1.5 1.0 175 C 25 C 25 C 180 0 1500 ID[A] 0.5 0 1 2 3 4 5 6 7 VGS[V] 2 4 6 8 10 12 14 16 18 20 VGS[V] ID=f(VGS),|VDS|>2|ID|RDS(on)max;parameter:Tj Final Data Sheet 0.0 RDS(on)=f(VGS),ID=100A;parameter:Tj 7 Rev.2.1,2019-05-08 IRMOSFET-StrongIRFET IRF60SC241 Diagram9:Normalizeddrain-sourceonresistance Diagram10:Typ.gatethresholdvoltage 2.5 4.0 2.0 1.5 2500 A VGS(th)[V] RDS(on)(normalizedto25C) 3.0 1.0 2.0 250 A 1.0 0.5 0.0 -60 -20 20 60 100 140 0.0 -75 180 -25 25 Tj[C] 75 125 175 Tj[C] RDS(on)=f(Tj),ID=100A,VGS=10V VGS(th=f(Tj),VGS=VDS;parameter:ID Diagram11:Typ.capacitances Diagram12:Forwardcharacteristicsofreversediode 5 104 10 25 C 175 C 103 Ciss 104 IF[A] C[pF] 102 101 Coss 103 Crss 100 102 0 12 24 36 48 60 10-1 0.0 0.2 0.4 VDS[V] 0.8 1.0 1.2 1.4 1.6 1.8 VSD[V] C=f(VDS);VGS=0V;f=1MHz Final Data Sheet 0.6 IF=f(VSD);parameter:Tj 8 Rev.2.1,2019-05-08 IRMOSFET-StrongIRFET IRF60SC241 Diagram13:Avalanchecharacteristics Diagram14:Typ.gatecharge 3 10 14 8V 12 V 30 V 12 102 10 8 100 C VGS[V] IAV[A] 25 C 1 10 150 C 6 4 100 2 10-1 10-1 100 101 102 103 104 tAV[s] 0 0 50 100 150 200 250 300 350 400 Qgate[nC] IAS=f(tAV);RGS=50;parameter:Tj,start VGS=f(Qgate),ID=100Apulsed,Tj=25C;parameter:VDD Diagram15:Drain-sourcebreakdownvoltage Diagram Gate charge waveforms 72 70 VBR(DSS)[V] 68 66 64 62 -75 -25 25 75 125 175 Tj[C] VBR(DSS)=f(Tj);ID=1mA Final Data Sheet 9 Rev.2.1,2019-05-08 IRMOSFET-StrongIRFET IRF60SC241 5PackageOutlines Figure1OutlinePG-TO263-7,dimensionsinmm/inches Final Data Sheet 10 Rev.2.1,2019-05-08 IRMOSFET-StrongIRFET IRF60SC241 RevisionHistory IRF60SC241 Revision:2019-05-08,Rev.2.1 Previous Revision Revision Date Subjects (major changes since last revision) 1.0 2018-11-28 Release of preliminary version 2.0 2018-12-04 Release of final version 2019-05-08 Removed Qualified according to JEDEC standard from the features section since it's redundant-page1 2.1 Trademarks Allreferencedproductorservicenamesandtrademarksarethepropertyoftheirrespectiveowners. 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TheInfineonTechnologiescomponentdescribedinthisDataSheetmaybeusedinlife-supportdevicesorsystemsand/or automotive,aviationandaerospaceapplicationsorsystemsonlywiththeexpresswrittenapprovalofInfineonTechnologies,ifa failureofsuchcomponentscanreasonablybeexpectedtocausethefailureofthatlife-support,automotive,aviationand aerospacedeviceorsystemortoaffectthesafetyoreffectivenessofthatdeviceorsystem.Lifesupportdevicesorsystemsare intendedtobeimplantedinthehumanbodyortosupportand/ormaintainandsustainand/orprotecthumanlife.Iftheyfail,itis reasonabletoassumethatthehealthoftheuserorotherpersonsmaybeendangered. Final Data Sheet 11 Rev.2.1,2019-05-08