1
IRF60SC241
Rev.2.1,2019-05-08Final Data Sheet
D²-PAK7pin
Drain
tab
Gate
Pin 1
Source
Pin 2-7
MOSFET
IRMOSFET-StrongIRFETª
Features
•VerylowRDS(on)
•Highcurrentcarryingcapability
•175°Coperatingtemperature
•Optimizedforbroadestavailabilityfromdistributionpartners
Benefits
•Reducedconductionlosses
•Increasedpowerdensity
•Increasedreliabilityversus150°Cratedparts
•Halogen-freeaccordingtoIEC61249-2-21
Productvalidation
QualifiedaccordingtoJEDECStandard
Table1KeyPerformanceParameters
Parameter Value Unit
VDS 60 V
RDS(on),typ 0.95 mΩ
RDS(on),max 1.3 mΩ
ID(SiliconLimited) 363 A
ID(PackageLimited) 360 A
QG(0V..10V) 311 nC
Type/OrderingCode Package Marking RelatedLinks
IRF60SC241 PG-TO 263-7 IRF60SC241 -
2
IRMOSFET-StrongIRFETª
IRF60SC241
Rev.2.1,2019-05-08Final Data Sheet
TableofContents
Description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1
Maximum ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
Thermal characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
Electrical characteristics diagrams . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6
Package Outlines . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10
Revision History . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11
Trademarks . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11
Disclaimer . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11
3
IRMOSFET-StrongIRFETª
IRF60SC241
Rev.2.1,2019-05-08Final Data Sheet
1Maximumratings
atTA=25°C,unlessotherwisespecified
Table2Maximumratings
Values
Min. Typ. Max.
Parameter Symbol Unit Note/TestCondition
Continuous drain current ID
-
-
-
-
-
-
360
363
256
A
VGS=10V,TC=25°C
VGS=10V,TC=25°C(siliconlimited)
VGS=10V,TC=100°C1)
Pulsed drain current1) ID,pulse - - 1440 A TC=25°C
Avalanche energy, single pulse2) EAS - - 799 mJ ID=100A,RGS=50Ω
Gate source voltage VGS -20 - 20 V -
Power dissipation Ptot -
-
-
-
417
2.4 WTC=25°C
TA=25°C,RTHJA=62°C/W3)
Operating and storage temperature Tj,Tstg -55 - 175 °C IEC climatic category; DIN IEC 68-1:
55/175/56
2Thermalcharacteristics
Table3Thermalcharacteristics
Values
Min. Typ. Max.
Parameter Symbol Unit Note/TestCondition
Thermal resistance, junction - case,
04) RthJC - - 0.36 °C/W -
Thermal resistance, junction -Ambient,
0RthJA - - 62 °C/W -
Case-to-Sink, Flat Greased Surface RthCS - 0.5 - °C/W -
1) See Diagram 3 for more detailed information
2) See Diagram 13 for more detailed information
3) When mounted on 1 square PCB (FR-4 or G-10 Material). For recommended footprint and soldering techniques refer to
application note #AN-994:
4) RthJC is measured at TJ approximately 90°C.
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IRMOSFET-StrongIRFETª
IRF60SC241
Rev.2.1,2019-05-08Final Data Sheet
3Electricalcharacteristics
atTj=25°C,unlessotherwisespecified
Table4Staticcharacteristics
Values
Min. Typ. Max.
Parameter Symbol Unit Note/TestCondition
Drain-source breakdown voltage V(BR)DSS 60 - - V VGS=0V,ID=250uA
Breakdown voltage temperature
coefficient dV(BR)DSS/dTj- 43 - mV/°CID=5mA,referencedto25°C
Gate threshold voltage VGS(th) 2.2 - 3.7 V VDS=VGS,ID=250µA
Zero gate voltage drain current IDSS -
-
-
-
1
150 µA VDS=60V,VGS=0V,Tj=25°C
VDS=60V,VGS=0V,Tj=125°C
Gate-source leakage current IGSS - - 100 nA VGS=20V,VDS=0V
Drain-source on-state resistance RDS(on) -
-
0.945
1.2
1.30
-mΩVGS=10V,ID=100A
VGS=6V,ID=50A
Gate resistance1) RG- 2.3 - Ω-
Transconductance gfs - 340 - S |VDS|≥2|ID|RDS(on)max,ID=100A
Table5Dynamiccharacteristics
Values
Min. Typ. Max.
Parameter Symbol Unit Note/TestCondition
Input capacitance1) Ciss - 16000 - pF VGS=0V,VDS=30V,f=1MHz
Output capacitance1) Coss - 1600 - pF VGS=0V,VDS=30V,f=1MHz
Reverse transfer capacitance1) Crss - 1000 - pF VGS=0V,VDS=30V,f=1MHz
Turn-on delay time td(on) - 22 - ns VDD=30V,VGS=10V,ID=30A,
RG,ext=2.7Ω
Rise time tr- 59 - ns VDD=30V,VGS=10V,ID=30A,
RG,ext=2.7Ω
Turn-off delay time td(off) - 227 - ns VDD=30V,VGS=10V,ID=30A,
RG,ext=2.7Ω
Fall time tf- 88 - ns VDD=30V,VGS=10V,ID=30A,
RG,ext=2.7Ω
1) Defined by design. Not subject to production test.
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IRMOSFET-StrongIRFETª
IRF60SC241
Rev.2.1,2019-05-08Final Data Sheet
Table6Gatechargecharacteristics1)
Values
Min. Typ. Max.
Parameter Symbol Unit Note/TestCondition
Gate to source charge Qgs - 79 - nC VDD=30V,ID=100A,VGS=0to10V
Gate charge at threshold Qg(th) - 48 - nC VDD=30V,ID=100A,VGS=0to10V
Gate to drain charge2) Qgd - 95 - nC VDD=30V,ID=100A,VGS=0to10V
Switching charge Qsw - 126 - nC VDD=30V,ID=100A,VGS=0to10V
Gate charge total2) Qg- 311 388 nC VDD=30V,ID=100A,VGS=0to10V
Gate plateau voltage Vplateau - 4.8 - V VDD=30V,ID=100A,VGS=0to10V
Gate charge total, sync. FET Qg(sync) - 216 - nC VDS=0.1V,VGS=0to10V
Output charge1) Qoss - 77 - nC VDD=30V,VGS=0V
Table7Reversediode
Values
Min. Typ. Max.
Parameter Symbol Unit Note/TestCondition
Diode continuous forward current IS- - 347 A TC=25°C
Diode pulse current IS,pulse - - 1440 A TC=25°C
Diode forward voltage VSD - 0.86 1.2 V VGS=0V,IF=100A,Tj=25°C
Reverse recovery time2) trr - 43 - ns VR=51V,IF=100A,diF/dt=100A/µs
Reverse recovery charge2) Qrr - 58 - nC VR=51V,IF=100A,diF/dt=100A/µs
1) See ″Gate charge waveforms″ for parameter definition
2) Defined by design. Not subject to production test.
6
IRMOSFET-StrongIRFETª
IRF60SC241
Rev.2.1,2019-05-08Final Data Sheet
4Electricalcharacteristicsdiagrams
Diagram1:Powerdissipation
TC[°C]
Ptot[W]
0 25 50 75 100 125 150 175
0
50
100
150
200
250
300
350
400
450
Ptot=f(TC)
Diagram2:Draincurrent
TC[°C]
ID[A]
0 25 50 75 100 125 150 175
0
100
200
300
400
ID=f(TC);VGS≥10V
Diagram3:Safeoperatingarea
VDS[V]
ID[A]
10-1 100101102
10-2
10-1
100
101
102
103
104
10 µs
100 µs
1 ms
10 ms
DC
ID=f(VDS);TC=25°C;D=0;parameter:tp
Diagram4:Max.transientthermalimpedance
tp[s]
ZthJC[K/W]
10-5 10-4 10-3 10-2 10-1 100
10-3
10-2
10-1
100
single pulse
0.01
0.02
0.05
0.1
0.2
0.5
ZthJC=f(tp);parameter:D=tp/T
7
IRMOSFET-StrongIRFETª
IRF60SC241
Rev.2.1,2019-05-08Final Data Sheet
Diagram5:Typ.outputcharacteristics
VDS[V]
ID[A]
012345
0
180
360
540
720
900
1080
1260
1440
4.5 V
5 V
5.5 V
6 V
8 V
10 V
12 V
15 V
ID=f(VDS),Tj=25°C;parameter:VGS
Diagram6:Typ.drain-sourceonresistance
ID[A]
RDS(on)[mΩ]
0 300 600 900 1200 1500
0.5
1.0
1.5
2.0
2.5
3.0
3.5
4.0
4.5
5.0
5 V
5.5 V
6 V
7 V
10 V
RDS(on)=f(ID),Tj=25°C;parameter:VGS
Diagram7:Typ.transfercharacteristics
VGS[V]
ID[A]
01234567
0
180
360
540
720
900
1080
1260
1440
175 °C 25 °C
ID=f(VGS),|VDS|>2|ID|RDS(on)max;parameter:Tj
Diagram8:Typ.drain-sourceonresistance
VGS[V]
RDS(on)[mΩ]
2 4 6 8 10 12 14 16 18 20
0.0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
4.0
125 °C
25 °C
RDS(on)=f(VGS),ID=100A;parameter:Tj
8
IRMOSFET-StrongIRFETª
IRF60SC241
Rev.2.1,2019-05-08Final Data Sheet
Diagram9:Normalizeddrain-sourceonresistance
Tj[°C]
RDS(on)(normalizedto25°C)
-60 -20 20 60 100 140 180
0.0
0.5
1.0
1.5
2.0
2.5
RDS(on)=f(Tj),ID=100A,VGS=10V
Diagram10:Typ.gatethresholdvoltage
Tj[°C]
VGS(th)[V]
-75 -25 25 75 125 175
0.0
1.0
2.0
3.0
4.0
2500 µA
250 µA
VGS(th=f(Tj),VGS=VDS;parameter:ID
Diagram11:Typ.capacitances
VDS[V]
C[pF]
0 12 24 36 48 60
102
103
104
105
Ciss
Coss
Crss
C=f(VDS);VGS=0V;f=1MHz
Diagram12:Forwardcharacteristicsofreversediode
VSD[V]
IF[A]
0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8
10-1
100
101
102
103
104
25 °C
175 °C
IF=f(VSD);parameter:Tj
9
IRMOSFET-StrongIRFETª
IRF60SC241
Rev.2.1,2019-05-08Final Data Sheet
Diagram13:Avalanchecharacteristics
tAV[µs]
IAV[A]
10-1 100101102103104
10-1
100
101
102
103
25 °C
100 °C
150 °C
IAS=f(tAV);RGS=50Ω;parameter:Tj,start
Diagram14:Typ.gatecharge
Qgate[nC]
VGS[V]
0 50 100 150 200 250 300 350 400
0
2
4
6
8
10
12
14
8 V
12 V
30 V
VGS=f(Qgate),ID=100Apulsed,Tj=25°C;parameter:VDD
Diagram15:Drain-sourcebreakdownvoltage
Tj[°C]
VBR(DSS)[V]
-75 -25 25 75 125 175
62
64
66
68
70
72
VBR(DSS)=f(Tj);ID=1mA
Diagram Gate charge waveforms
10
IRMOSFET-StrongIRFETª
IRF60SC241
Rev.2.1,2019-05-08Final Data Sheet
5PackageOutlines
Figure1OutlinePG-TO263-7,dimensionsinmm/inches
11
IRMOSFET-StrongIRFETª
IRF60SC241
Rev.2.1,2019-05-08Final Data Sheet
RevisionHistory
IRF60SC241
Revision:2019-05-08,Rev.2.1
Previous Revision
Revision Date Subjects (major changes since last revision)
1.0 2018-11-28 Release of preliminary version
2.0 2018-12-04 Release of final version
2.1 2019-05-08 Removed ‚Qualified according to JEDEC standard‛ from the features section since it’s
redundant-page1
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Publishedby
InfineonTechnologiesAG
81726München,Germany
©2019InfineonTechnologiesAG
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(“Beschaffenheitsgarantie”).
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