The documentation and process conversion | INCH-POUND measures necessary to comply with this OTT revision shall be comoleted by 26 Aug 94. MIL-S-19500/358D 4 26 May 1994 SUPERSEDING MIL~S-19500/358C 29 September 1992 MILITARY SPECIFICATION SEMICONDUCTOR DEVICE, DIODE, SILICCN, VOLTAGE REGULATOR & AND R8, TYPES 1N3305 THROUGH 1N3350, 1N4549 THROUGH 1N4554 JAN, JANTX, JANTXV, AND JANS This specification is approved for use by ail Depart- ments and Agenc-es of the Department of Defense. 1. SCOPE 1.1 Scope. This specification covers the detail requirements for B type (standard polarity) and RB type Creverse polarity), 50 watt, silicon, voltage regulator diodes. Four levels of product assurance are provided for each device type as specified in MIL-S-19500. 1.2 Physical dimensions. See figure 1 (00-5). 1.3. Maximum ratings. Maximum ratings are as shown tn columns 3, 7, and 9 of table V herein and as follows: Derate P, = 50 W at T. 2 275C at 0.5 W/C above TT 2 75C. = +175C. a -65C = T stg = c= 150C; -65C = T 1.4 Primary electrical characteristics. Primary electrical characteristics are as shown 1n columns 1, 8, 11, and 13 of table V herein, and as follows: Thermal resistance (Roi? = 2.0C/W maximum. Beneficial comments (recommendations, additions, deletions) and any pertinent data which may be of use 1n improving this document should be addressed to: U.S. Army Laboratory Command, Electronics and Power Sources Command, ATTN: AMSRL-EP-RO, Fort Monmouth, NJ 07703-5601 by using the Standardization Document Improvement Proposal (D0 Form 1426) appearing at the end of this document or by etter. AMSC N/A FSC 5961 OLSTRIBUTION STATEMENT A. Approved for public release; distribution 1s unlimited. me 0000125 9035415 4STMIL-S-19500/358D 2. APPLICABLE DOCUMENTS 2.1 Government documents. 2.1.1 Specifications, standards, and handbooks. The following specifications, standards, and handbacks form a part of this document to the extent specified herein. Unless otherwise specified, the issues of these documents are those Listed in the 1ssue of the Department of Defense Index of Specifications and Standards (DODISS) and supplement thereto, cited in the solicitation (see 6.2). SPECIFICATION MILITARY MIL-S-19500 - Semiconductor Devices, General Specification for. STANDARD MILITARY MIL-STD-750 - Test Methods for Semiconductor Devices. (Unless atherwise indicated, copies of federal and military specifications, standards, and handbooks are available from the Defense Printing Service Detachment Office, Building 4D (Customer Service), 700 Robbins Avenue, Philadelphia, PA 19111-5094.) 2.2 Order of precedence. In the event of a conflict between the text of this document and the references cited herein, the text of this document takes precedence. Nothing in this document, however, supersedes applicable laws and regulations unless a specific exemption has been obtained. 3. REQUIREMENTS 3.1 Associated detail specification. The individual item requirements shall be in accordance with MIL-S-19500 and as specified herein. 3.2 Abbreviations, symbols, and definitions. Abbreviations, symbols, and definitions used herein shall be as specified in MIL-S-19500. 3.3 Design, construction, and physical dimensions. Semiconductor diodes shall be of the design, construction, and physical dimensions as specified in MIL-S$-19500 and on figure 1 herein. Current density of internal conductors shall be as specified im MIL-S-19500. The US Government's preferred system of measurement is the metric SI system. However, since this item was originally designed using inch-pound units of measurement, in the event of conflict between the metric and inch-pound units, the inch-pound units shall take precedence. 3.3.1 Lead material and finish. Lead finish shall be solderable as defined in MIL-S-19500, MIL-STD-750, and herein. Where a choice of lead finish 1s desired, it shall be specified in the acquisition document (see 6.2). 3.3.2 Polarity. Standard units (8) shall have the anode connected to the stud. Reversed units (RB) shall have the cathode connected to the stud. 3.4 Marking. Marking shalt be in accordance with MIL-S-19500. At the option of the manufacturer, the marking of the country of origin may be omitted from the body of the semiconductor. 3.4.1 RB types. Reverse (cathode to stud) units shail be marked with an "R" preceding the "B" In the type designation. 4. QUALITY ASSURANCE PROVISIONS 4.1 Sampling and inspection. Sampling and inspection shall be in accordance with MIL-$-19500, and as specified herein. Lot accumulation period shail be six months in Lieu of six weeks. 4.2 Qualification inspection. Qualification inspection shall be in accordance with MIL-$-19500. mm 0000125 0035415 316 @MIL~S-19500/358D Pop ARI Ts MARE ONG ANCUE COMLE: "ED TO Bas { I I | CIH*Ko} | I I I ri TIRES 1495 439B The es thyaga rei ies ey 1 Dimensions | | Symbol Millimeters Inches | Min Max Min Max L 4 A --- | 25.40 | --- | 1.000 : B w-- || 11.43 | --- -450 | cC 2.92 } 5.08 | .115 | .200 | - 4 1 ] . v T 1 D 10.72 | 14.51] .422 | .453 | t } 1 1 E 1.52 | --- | .060 | --- 1 q { F ere 1 9.5B $m GS i i ! 1 t 1 1 G o-- | 16.96 {| ~--- | .667 | 1 i j J t t a { 4H 16.96 | 17.45 -667 | .687 L | { | t 1 t tr 1 | K J wee | 4.45 | --- | 175 j F : t ! 1 Pou [ --- | 2.03 | --- | .080 | t i le ae 1 J NOTES: 1. Diameter of unthreaded portion shall be .249 maximum and .220 minimum. 2. Maximum pitch diameter of plated threads shall be basic pitch diameter (.2268). 3. Complete threads to extend to within 2-% threads of seating plane. 4. Angular orientation of this terminal is undefined. 5. Otmensions are in millimeters. 6. Inch-pound equivalents are given for general information only. me o0001eS 0035420 035 FIGURE 1. Physical dimensions.MIL-$-19500/3580 4.3 Screening (JANS, JANTX, and JANTXV levels oniy). Screening shall be in accordance with table II of MIL-S-19500, and as specified herein. The fallowing measurements shall be made in accordance with table | herein. Oevices that exceed the limits of table I herein shalt not be acceptable. Measurement Screen (see table II of MIL-S- 19500) JANS level JANTX and JANTXV levels 9 Tp and Vz (for devices with Not applicable V2 nom 2 10 V dc; see column 1 of table V) 11 Ta and Vai Aly = 100% of Inq and Vz initial vatue or 2 pA dc, whichever is greater; AV, = 1 percent of inttial value (for devices with V. 2 10 V de; see cotane} of table V) 12 See 4.2.1 See 4.2.1 13 Subgroups 2, (except forward jSubgroup 2 (except forward voltage voltage test) and 3 of test) of table I herein; table I herein; Al 1 = 100 percent of initial Al 477100 percent of value or 2 LA de, initial value or 2 pA dc, whichever is greater; whichever is greater: Vz = t1 percent of initial value avy = 21% of initial value 4.3.1 Power burn-in conditions. Power burn-in conditions are as follows: I, = Column 4 of table V at a Te = +150C. 4.4 Quality conformance inspection. Quality conformance inspection shall be in accordance with MIL-S-19500 and as specified herein. Group A inspection shalt be performed on each sublot. 4.4.1 Group A inspection. Group A inspection shail be conducted in accordance with MIL-$-19500 and table I herein. End point electrical measurements shat! be in accordance with the applicable steps of table IV herein, 4.4.2 Group 8B inspection. Group 8 inspection shall be conducted in accordance with the conditions specified for subgroup testing in table [Va (JANS) and table [Vb (JAN, JANTX, and JANTXV), of MIL-$-19500, and tables Ila and IIb herein. Electrical measurements (end-points) and delta requirements shall be in accordance with the applicable steps of table IV herein. 4.4.3 Group C inspection. Group C inspection shall be conducted in accordance with the conditions specified for subgroup testing in table V of MIL-S-19500 and table II! herein. Electrical measurements (end-points) and delta requirements shall be in accordance with the applicable steps of table IV herein. @@ c0001eS5 0035421 T7y) mmMIL-S-19500/358D TABLE I. Group A inspectzen. 1 breakdown voltage | | 2/ | Inspection 1/ | MIL-STD-750 | Symbol Limits Unit i ' 4 | {Method Conditions : Hin Max { 1 ! | Subgroup 1 { | | |Visual and mechanical | 2071 | | | inspection i | | | | | Subgroup 2 | | | | | | [Forward voltage | 6011 [Ip = 10 A de Ive | | 1.5 | V de | | | i | | {Reverse current 4016 [Vp = column 10 of table v, lIpy | Column {| WA de | jde method | {11 | | | | |Regulator voltage | 4022 iI, = column 4 of table Vv [Vy | Column | Column { V de [ (see 4.5.3) | | | f 2 3 | | | | \ Subgroup 3 | | | | | | | | {High temperature iT, = 150C | | | operation: i | { | | | | Reverse current | 4016 [Vp = column 10 of table Vv, [las | | Column | pA de | | |dce method | | {| 14 | | | | | Subgroup 4 | | | | | | | |Small-signal break- | 4051 II, = column 4 of table V, |Z, | | Column | ohms | down impedance | II. = 10% 1 | | | 5 | | j $9 ? | | | | (Kee impedance 4051 | 12x = 5 mA de, Ieig = 10% Ip |?2k | Cotumn ohms | Subgroup 5 | | | | | | | Not applicable | | | | | | | | Subgroup 6 jJANS level only | | 1 | | {Surge current | 4066 iloom = column 9 of table V | | ! | (see 4.5.1) | | | | | | | iEnd point electrical [See table Iv, steps 1, 3, and 4 | | { measurements | | j | | ] | | | | | | | Subgroup 7 | | JANS level only | | | | | | | | | Voltage regulation | | [Vv | | Column | V de (see 4.5.2) | | | reg | 3 | | | | | | Temperature | 4071 [I, = column 4 of table Vv, |v > | | Column | %/C coefficient of | [T, = 30C 3C, Ty = T, +700C | | | 13 | | | | | | | | i | | | 1 (see 4.5.4) 1/ for sampling plan, see MIL-S-19500. 2/ Column references are to table V herein. @e o0001c5 0035422 100rn a Be TDs wit ee MIL-S- 19500/3580 TABLE Ila. Group B inspection for JANS devices. MIL-STD-750 Inspection 1/ Method | Conditions Subgroup 1 Physical dimensions 2066 See figure 1 Subgroup 2 Solderabitity 2026 Resistance to solvents 1022 Subgroup 3 Thermal shock 1051 Thigh = +175C (temperature cycling) | Hermetic seal | 1071 Fine Gross Electrical measurements See table IV, steps 1, 3, 4, 5, and 6. Die shear 2017 Subgroup 4 Intermittent operating 1037 I, = column 7 of table V, Te = 30C 3C, life t. =t = 3 minutes minimum for 2,000 on off cycles. Electrical measurements See table 1V, steps 1, 3, 4, 5, and 6. Subgroup 5 Acceierated steady - 1027 ly = column 4 of table V for 168 hours, state operation life T, = 125C or adjusted, as required, to give an average lot ty = 225C. Electrical measurements See table IV, steps 2, 3, 4, 5, and 6. Subgroup 6 Thermal resistance 6081 Rac = 2.0C/W maximum. For purposes of this test, junction-to-case shall be used in lieu of junction-to-lead and Re ic shall be used in lieu of Roy: The case shall be the reference point for calculation of junction-to-case thermal resistance (Rg : The mounting arrangement ishall_be with heat sink to case. 1s For sampling plan, see MIL-S-19500, M@ 00001e5 0035423 44?TABLE IIb. MIL-S-19500/358D Group B inspection for JAN, JANTX, and JANTXV devices. (nonoperating life) Electrical measurements MIL-STD-750 Inspection t/ Method Conditions Subgroup_1 Sotderability 2026 Resistance to solvents 1022 Subgroup 2 Thermal shock 1051 Thigh = +175C (temperature cycling) Surge current loom = column 9 of table Vv (see 4.5.1) Hermetic seal 1071 Fine leak Gross leak Electrical measurements See table IV, steps 1, 3, and 4. Subgroup 3 Steady-state operation 1027 To = +150C, life ly = column 4 of table V Electrical measurements See table IV, steps 2, 3, and 4. Subgroup 4 Decap internal visual 2075 (design verification) Subgroup 5 Thermal resistance 4081 Reic = 2.0C/W maximum. For purposes of this test, junction-to-case shall be used in lieu of junction-to-lead and Reic shalt be used in lieu of Rost: The case shall be the reference point for calculation of junction-to-case thermal resistance (R,,.). The mounting arrangement shall be with heatsink to case. Subgr 6 High temperature 1032 jt, = +175C See table IV, steps 2, 3, and 4. i/ For sampting plan, see MIL-5-19500. M@ 0000125 0035424 753MIL-S$-19500/3580 TABLE 111. Group C inspection for alt quality levels. MIL-STD-750 Limits Inspection 1/ Symbol Unit Method Conditions Min Max Subgroup 1 Physical dimensions 2066 [See figure 1 Subgroup 2 Thermal shock 1056 (glass strain) Terminal strength 2036 Tension Test condition A, 20 pounds, t = 15 seconds Torque (stud) Test condition Do, mounting = normal mounting means, 30 lb-in, t = 30 seconds Bending stress Test condition F, 3 pounds, t = 15 seconds Hermetic seal 1071 Fine leak Gross leak . Moisture resistance 1021 Electrical measurements See table [V, steps 1, 3, 4, 5, and 6 (JANS) and steps 1, 3, and 4 (JAN, JANTX, and JANTXV). Subgroup 3 Shock 2016 Vibration, variable 2086 frequency Constant acceleration 2006 Electrical measurements See table IV, steps 1, 3, 4, 5, and 6 (JANS) and steps 1, 3, and 4 (JAN, JANTX and JANTXV). s roup 4 Salt atmosphere 1041 (corrosion) See footnotes at end of table. me 0000125 0035425 b1T =TABLE III. MIL-S-19500/358D Group C inspection for all quality levels - Continued. { MIL-STO-750 Limits Inspection 1/ Symbol _ Unit | Method Conditions Min Max : | Subgroup 5 { t Not applicable Subgroup 6 Steady-state operation 1026 Ty = *150C, life ty = column 4 of table V | Electrical measurements See table IV, steps 2, 3, 4, and 6 (JANS) and steps 2, 3, and 4 (JAN, JANTX, andJANTXV). i Subgroup 7 2/ JAN, JANTX, and JANTXV levels only i Temperature coefficient 4071 Ip = column 4 of table V, av, Column | 41C of regulator voltage T, = 50C s3C, Ty = 7 13 of \ (see 4.5.4) + 100C each sublot table Iv| | Voltage regulation Each sublot V2treg) Column V de (see 4.5.2) 8 of table v | i 2/ LTPD = 10, small lot = For sampling plan, see MIL-S-19500. 12 devices, c = 0. M@ 0000125 o0354eb Ssh m@MIL-S-19500/358D TABLE IV. Groups B and C electrical measurements. MIL-STD-750 Limits 1/ Step Inspection symbol Unit Method Conditions Min Max 1 Reverse current 4016 |0C method, Tey Cotumn | pA de V, = column 10 of 1 table V 2 Reverse current 4016 |OC method, Ip3 Column | UA de V, = column 10 of 12 table V 3 Regulator voltage 4022 |1, = cotumn 4 of Vz Column | Column | V de table V 2 3 4 Small-signat break- 4051 I, = column 4 of zy Column | ohms down impedance table V, 5 leig = 10% of I, 5 Knee impedance 4051 |I,, = 5 mA de, z Column | ohms 2X 2K I... = 0.5 mA de 6 sig 6 Forward voltage 4011 Ip = 10 A de Avy 2/ #50 mV de change from previously measured value 1/ Column references are to table V. M 0000125 00354e? 4c 10 2/ Devices which exceed the group A Limits for this test shall not be accepted.MIL-S-19500/3580 a}qe) Jo pua 1e aJoUIODJ aas 002 980+ 0d OL 2h Se2l 002 0022 0S2 02*2| 099 6664] SO'SL 061 BLLENL 002 Sg0+ 02 ol 27eh G2Z2t 0674 0992 0S 002| 002 O6SL} OlZt ost ZUEENL 002 S80*+ 02 OL ost sZet 08 t o0s2 0s2 OBL] OFZ sev dty Stok oZt SLEENE 002 80+ 02 OL 22t sZ4t o9L 0262 0S2 O9L| O82 ossl} o2St oot SELENE 002 280 + 02 ot ot os"St os*t OLLE 0S2 Ov'k| O8 S2Sl] Se9k oSl DLSENt 002 ogo" + 02 OL ot oo Zt ov" ooo: 0S2 O2*t}] 068 OL YL} OF" ost SLEENE 002 080" + 02 ol 66 0sst 02" ose 0Se OL ki 096 So'Et} Seek ost ChEENt 002 620 + 02 ol s 0002 OL*L O26 0S2 oo"k| oooL | O92] OL Oet LEEENt 002 S80+ 02 ot 938 osl2 00t Oey 0S2 og8"O! 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SbuUTVeT Pue Saijsisayseseyy A JFav1 13 Mm 00001c5 0035430 T? @i ae a ole ramet ate aginst, ATES san S Saati a a, Naa AOE, MIL-S-19500/3580 &.5 Methods of inspection. Methods of inspection shall be as specified in the appropriate tables and as follows. 4.5.1 Surge current losm- The currents specified in column 9 of table V shall be applied in the reverse direction and shall be superimposed on the current (Iz = column 4 of table V) a total of five surges at j-minute intervals. Each individual surge shall be one-half square wave pulse of 1/120-second duration or an equivalent one-half sine wave with the same effective (rms) current. 4.5.2 Voltage regulation Vv, (reg). A current at 10 percent of I, (column 7) shall be maintained until thermal equilibrium is obtained, and the V shalt then be increased to a level of 50 percent of I, (column 7) and maintained at this level for a period of time until thermal equilibrium is obtained. At which time, the voltage change shall not exceed column 8 of table V. During this test, the case temperature (Te) of the diode shall be equal to 30C 2#3C. 4.5.3 Regulator voltage. The I, test current (column 4 of table V) shall be applied until thermal equilibrium is obtained prior to reading the regulator voltage. Ouring this test, the case temperature Te) of the diode shall be equal to 30C +3C. 4.5.4 Temperature coefficient of regulator voltage (av). The device shall be temperature stabilized with current applied prior to reading regulator voltage at the specified case temperatures. 4.5.5 Inspection condition. Unless otherwise specified in MIL-S-19500 or herein, all inspections shall be made at case temperature (Te) of 30C #3C. 4.5.6 Test ratings. Test ratings shall be as shown in table V. Type numbers with the suffix "RB" shail have identical requirements as shown in table V for the corresponding B type except the polarity shall be as specified in 3.3.2 herein. 5. PACKAGING 5.1 Packaging requirements. The requirements for packaging shall be in accordance with MIL-$-19500. 6. NOTES (This section contains information of a general or explanatory nature that may be helpful, but is not mandatory. ) 6.1 Notes. The notes specified in MIL-S-19500 are applicable to this specification. 6.2 Acquisition requirements. Acquisition documents should specify the following: a. [ssue of DODISS to be cited in the solicitation. b. Lead material and finish (see 3.3.1). c. Type designation, polarity type, and product assurance level. 6.3 Changes from previous issue. Marginal notations are not used in this revision to identify changes with respect to the previous issue due to the extensiveness of the changes. 14 M@ 000015 0035431 913 mmCustodians: Army - ER Air Force -17 NASA ~ NA Review activities: Air Force - 80, 85, 99 NASA - LRC, MSF DLA - ES M@ 0000125 0035432 65ST @ MIL-S-19500/358D CONCLUDING MATERIAL 15 Preparing activity: Army - ER Agent: OLA - ES (Project 5961-1641)