1. Product profile
1.1 General description
The PMBD7000 consists of two high-speed switching diodes connected in series,
fabricated in planar technology, and encapsulated in a small SOT23 (TO-236AB)
Surface-Mounted Device (SMD) plastic package.
1.2 Features and benefits
1.3 Applications
High-speed switching
General-purpose switching
1.4 Quick reference data
[1] When switched from IF= 10 mA to IR=10mA; R
L= 100 Ω; measured at IR=1mA.
PMBD7000
Double high-speed switching diode
Rev. 4 — 16 September 2010 Product data sheet
High switching speed: trr 4ns Reverse voltage: VR100 V
Repetitive peak forward current:
IFRM 450 mA
Repetitive peak rever s e voltage:
VRRM 100 V
Small SMD plastic package AEC-Q101 qualified
Table 1. Quick reference data
Symbol Parameter Conditions Min Typ Max Unit
Per diode
IRreverse current VR= 100 V - - 0.5 μA
VRreverse voltage - - 100 V
trr reverse recovery time [1] --4ns
PMBD7000 All information provided in this document is subject to legal disclaimers. © NXP B.V. 2010. All rights reserved.
Product data sheet Rev. 4 — 16 September 2010 2 of 12
NXP Semiconductors PMBD7000
Double high-speed switching diode
2. Pinning information
3. Ordering information
4. Marking
[1] * = -: made in Hong Kong
* = p: made in Hong Kong
* = t: made in Malaysia
* = W: made in China
Table 2. Pinning
Pin Description Simplified outline Graphic symbol
1 anode (diode 1)
2 cathode (diode 2)
3 cathode (diode 1),
anode (diode 2) 12
3
006aaa76
3
12
3
Table 3. Ordering i nformation
Type number Package
Name Description Version
PMBD7000 - plastic surface-mounted package; 3 leads SOT23
Table 4. Marking codes
Type number Marking code[1]
PMBD7000 *5C
PMBD7000 All information provided in this document is subject to legal disclaimers. © NXP B.V. 2010. All rights reserved.
Product data sheet Rev. 4 — 16 September 2010 3 of 12
NXP Semiconductors PMBD7000
Double high-speed switching diode
5. Limiting values
[1] Single diode loaded.
[2] Double diode loaded.
[3] Tj=25°C prior to surge.
[4] Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated and standard
footprint.
6. Thermal characteristics
[1] Single diode loaded.
[2] Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint.
Table 5. Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol Parameter Conditions Min Max Unit
Per diode
VRRM repetitive peak reverse
voltage -100V
VRreverse voltage - 100 V
IFforward current [1] -215mA
[2] -125mA
IFRM repetitive peak forward
current -450mA
IFSM non-repetitive peak
forward current square wave [3]
tp=1μs-4A
tp=1ms - 1 A
tp=1s - 0.5 A
Ptot total power dissipation Tamb 25 °C[1][4] -250mW
Per device
Tjjunction temperature - 150 °C
Tamb ambient temperature 55 +150 °C
Tstg storage temperature 65 +150 °C
Table 6. Thermal characteristics
Symbol Parameter Conditions Min Typ Max Unit
Rth(j-a) thermal resistance from
junction to ambient in free air [1][2] - - 500 K/W
Rth(j-t) thermal resistance from
junction to tie-point - - 360 K/W
PMBD7000 All information provided in this document is subject to legal disclaimers. © NXP B.V. 2010. All rights reserved.
Product data sheet Rev. 4 — 16 September 2010 4 of 12
NXP Semiconductors PMBD7000
Double high-speed switching diode
7. Characteristics
[1] When switched from IF= 10 mA to IR=10mA; R
L= 100 Ω; measured at IR=1mA.
[2] When switched from IF=10mA; t
r=20ns.
Table 7. Characteristics
Tj=25
°
C unless otherwise specified.
Symbol Parameter Conditions Min Typ Max Unit
Per diode
VFforward voltage IF= 1 mA - 550 700 mV
IF= 10 mA - 670 820 mV
IF=50mA --1V
IF= 100 mA - 0.75 1.1 V
IF=150mA --1.25V
IRreverse current VR= 50 V - - 300 nA
VR= 100 V - - 500 nA
VR=50V; T
j=150°C - - 100 μA
Cddiode capacitance f = 1 MHz; VR=0V --1.5pF
trr reverse recovery time [1] --4ns
VFR forward recovery voltage [2] --1.75V
FR4 PCB, standard footprint (1) Tj= 150 °C; typical values
(2) Tj=25°C; typical values
(3) Tj=25°C; maximum values
Fig 1. Forward current as a function of ambient
temperature; derating curve Fig 2. Forward current as a function of forward
voltage
mbd033
0 200
300
0
100
200
100
I
F
(mA)
T
amb
(°C)
single diode loaded
double diode loaded
02
300
IF
(mA)
0
100
200
mbg382
1VF (V)
(1) (2) (3)
PMBD7000 All information provided in this document is subject to legal disclaimers. © NXP B.V. 2010. All rights reserved.
Product data sheet Rev. 4 — 16 September 2010 5 of 12
NXP Semiconductors PMBD7000
Double high-speed switching diode
Based on square wave currents.
Tj=25°C; prior to surge (1) VR= 50 V; maximum values
(2) VR= 30 V; typical values
(3) VR= 50 V; typical values
Fig 3. Non-repe titive peak forward current as a
function of pulse duration; maximum values Fig 4. Reverse cu rrent as a function of junction
temperature
f=1MHz; T
amb =25°C
Fig 5. Diode capacitance as a function of reverse voltage; typical values
mbg704
10
1
102
IFSM
(A)
101
tp (μs)
110
4
103
10 102
mbg378
105
104
10 200
0100
IR
(nA)
103
102
(1)
Tj (°C)
(2) (3)
0816124
0.8
0.6
0
0.4
0.2
mbg446
V
R
(V)
C
d
(pF)
PMBD7000 All information provided in this document is subject to legal disclaimers. © NXP B.V. 2010. All rights reserved.
Product data sheet Rev. 4 — 16 September 2010 6 of 12
NXP Semiconductors PMBD7000
Double high-speed switching diode
8. Test information
8.1 Quality information
This product has been qualified in accordance with the Automotive Electronics Council
(AEC) standard Q101 - Stress test qualification for discrete semiconductors, and is
suitable for use in auto motive applications.
(1) IR=1mA
Fig 6. Reverse recovery time test circuit and waveforms
Fig 7. Forward recove ry voltage test circuit and waveforms
trr
(1)
+ I
F
t
output signal
t
r
t
p
t
10 %
90 %
V
R
input signal
V = V
R
+
I
F
×
R
S
R
S
= 50 ΩI
F
D.U.T.
R
i
= 50 Ω
SAMPLING
OSCILLOSCOPE
mga881
t
r
t
t
p
10 %
90 %
I
input signal
R
S
= 50 Ω
I
R
i
= 50 Ω
OSCILLOSCOPE
1 kΩ450 Ω
D.U.T.
mga88
2
VFR
t
output signal
V
PMBD7000 All information provided in this document is subject to legal disclaimers. © NXP B.V. 2010. All rights reserved.
Product data sheet Rev. 4 — 16 September 2010 7 of 12
NXP Semiconductors PMBD7000
Double high-speed switching diode
9. Package outline
10. Packing information
[1] For further information and the availability of packing methods, see Section 14.
Fig 8. Package outline PMBD7000 (SOT23/TO-236AB)
04-11-04Dimensions in mm
0.45
0.15
1.9
1.1
0.9
3.0
2.8
2.5
2.1
1.4
1.2
0.48
0.38
0.15
0.09
12
3
Table 8. Packing methods
The indicated -xxx are the last thre e digits of the 12NC ordering code.[1]
Type number Package Description Packin g quantity
3000 10000
PMBD7000 SOT23 4 mm pi tch, 8 mm tape and reel -215 -235
PMBD7000 All information provided in this document is subject to legal disclaimers. © NXP B.V. 2010. All rights reserved.
Product data sheet Rev. 4 — 16 September 2010 8 of 12
NXP Semiconductors PMBD7000
Double high-speed switching diode
11. Soldering
Fig 9. Reflow soldering footprint PMBD7000 (SOT23/TO-236AB)
Fig 10. Wave soldering footprint PMBD7000 (SOT23/TO-236AB)
solder lands
solder resist
occupied area
solder paste
sot023_
fr
0.5
(3×)
0.6
(3×)
0.6
(3×)
0.7
(3×)
3
1
3.3
2.9
1.7
1.9
2
Dimensions in mm
solder lands
solder resist
occupied area
preferred transport direction during soldering
sot023_
fw
2.8
4.5
1.4
4.6
1.4
(2×)
1.2
(2×)
2.2
2.6
Dimensions in mm
PMBD7000 All information provided in this document is subject to legal disclaimers. © NXP B.V. 2010. All rights reserved.
Product data sheet Rev. 4 — 16 September 2010 9 of 12
NXP Semiconductors PMBD7000
Double high-speed switching diode
12. Revision history
Table 9. Revision history
Document ID Release date Data sheet status Change notice Supersedes
PMBD7000 v.4 20100916 Product data sheet - PMBD7000_3
Modifications: The format of this data sheet has been redesigned to comply with the new identity
guidelines of NXP Semiconductors.
Legal texts have been adapted to the new company name where appropriate .
Table 4 “Marking codes: updated
Table 7 “Characteristics: corrected VF unit for condition IF=150mA
Figure 2: updated
Section 8 “Test in formation: fi gure title of Figure 6 amended
Section 8.1 “Quality information: added
Section 13 “Legal information: updated
PMBD7000_3 19990511 Product specification - PMBD7000_2
PMBD7000_2 19960918 Product specification - PMBD7000_1
PMBD7000_1 19960419 Product specification - -
PMBD7000 All information provided in this document is subject to legal disclaimers. © NXP B.V. 2010. All rights reserved.
Product data sheet Rev. 4 — 16 September 2010 10 of 12
NXP Semiconductors PMBD7000
Double high-speed switching diode
13. Legal information
13.1 Data sheet status
[1] Please consult the most recently issued document before initiating or completing a design.
[2] The term ‘short data sheet’ is explained in section “Definitions”.
[3] The product status of de vice(s) descr ibed in th is document m ay have cha nged since thi s document w as publish ed and may di ffe r in case of multiple devices. The latest product status
information is available on the Internet at URL http://www.nxp.com.
13.2 Definitions
Draft — The document is a draft version only. The content is still under
internal review and subject to formal approval, which may result in
modifications or additions. NXP Semiconductors does not give any
representations or warranties as to the accuracy or completeness of
information included herein and shall have no liab ility for the consequences of
use of such information.
Short data sheet — A short data sheet is an extract from a full data sheet
with the same product type number(s) and tit le. A short data sh eet is intended
for quick reference only and shou ld not b e relied u pon to cont ain det ailed and
full information. For detailed and full information see the relevant full data
sheet, which is available on request via the local NXP Semicond uctors sales
office. In case of any inconsistency or conflict with the short data sheet, the
full data sheet shall pre va il.
Product specificat ionThe information and data provided in a Product
data sheet shall define the specification of the product as agreed between
NXP Semiconductors and its customer, unless NXP Semiconductors and
customer have explicitly agreed otherwise in writing. In no event however,
shall an agreement be valid in which the NXP Semiconductors product is
deemed to off er functions and qualities beyond those described in the
Product data sheet.
13.3 Disclaimers
Limited warr a nty and liability — Information in this document is believed to
be accurate and reliable. However, NXP Semiconductors does not give any
representations or warrant ies, expressed or implied, as to the accuracy or
completeness of such information and shall have no liability for the
consequences of use of such information.
In no event shall NXP Semiconductors be liable for any indirect, incidental,
punitive, special or consequ ential damages (including - wit hout limitation - lost
profits, lost savings, business interruption, costs related to the removal or
replacement of any products or rework charges) whether or not such
damages are based on tort (including negligence), warranty, breach of
contract or any other legal theory.
Notwithstanding any damages that customer might incur for any reason
whatsoever, NXP Semiconductors’ ag gregate and cumulative l iability towards
customer for the products described herein shall be limited in accordance
with the Terms and conditions of commercial sale of NXP Semiconductors.
Right to make changes — NXP Semiconductors reserves the right to make
changes to information published in this document, including without
limitation specifications and product descriptions, at any time and without
notice. This document supersedes and replaces all informa tion supplied prior
to the publication hereof .
Suitability for use — NXP Semiconductors products are not designed,
authorized or warranted to be suit able for use in life support, life-critical or
safety-critical systems or equipment, nor in applications where failure or
malfunction of an NXP Semiconductors product can reasonably be expected
to result in perso nal injury, death or severe property or environmental
damage. NXP Semiconductors accepts no liab ility for inclusion and/or use of
NXP Semiconductors products in such equipment or applications and
therefore such inclusion and/or use is at the customer’s own risk.
Applications — Applications that are described herein for any of these
products are for illustrative purposes only. NXP Semiconductors makes no
representation or warranty that such applications will be suitable for the
specified use without further testing or modification.
Customers are responsible for the design and ope ration of their applications
and products using NXP Semiconductors product s, and NXP Semiconductors
accepts no liability for any assistance with applications or customer product
design. It is customer’s sole responsibility to determine whether the NXP
Semiconductors product is suit able and fit for the custome r’s applications and
products planned, as well as fo r the planned application and use of
customer’s third party customer(s). Custo mers should provide appropriate
design and operating safeguards to minimize the risks associated with their
applications and products.
NXP Semiconductors does not accept any liability related to any default,
damage, costs or problem which is based on any weakness or default in the
customer’s applications or products, or the application or use by customer’s
third party custo m er(s). Customer is responsible for doing all necessary
testing for the customer’s applications and products using NXP
Semiconductors products in order to avoid a default of the applications and
the products or of the application or use by customer’s third party
customer(s). NXP does not accept any liability in this respect.
Limiting values — Stress above one or more limiting values (as defined in
the Absolute Maximum Ratings System of IEC 60134) will cause permanent
damage to the device. Limiting values are stress ratings only and (proper)
operation of the device at these or any other conditions above those given in
the Recommended operating conditions section (if present) or the
Characteristics sections of this document is not warranted. Constant or
repeated exposure to limiting values will permanently and irreversibly affect
the quality and reliability of the device.
Terms and conditions of commercial sale — NXP Semiconductors
products are sold subject to the general terms and conditions of commercial
sale, as published at http://www.nxp.com/profile/terms, unless otherwise
agreed in a valid written individua l agreement. In case an individual
agreement is concluded only the ter m s and conditions of the respective
agreement shall apply. NXP Semiconductors hereby expressly objects to
applying the customer’s general terms and conditions with regard to the
purchase of NXP Semiconductors products by customer.
No offer to sell or license — Nothing i n this document may be interpreted or
construed as an of fer t o sell product s that is open for accept ance or the gr ant,
conveyance or implication of any license under any copyrights, patents or
other industrial or inte llectual property rights.
Export control — This document as well as the item(s) described herein
may be subject to export control regulatio ns. Export might require a prior
authorization from national authorities.
Document status[1][2] Product status[3] Definition
Objective [short] data sheet Development This document contain s data from the objecti ve specification for product development.
Preliminary [short] dat a sheet Qualification This document contains data from the preliminary specification.
Product [short] data sheet Production This document contains the product specification.
PMBD7000 All information provided in this document is subject to legal disclaimers. © NXP B.V. 2010. All rights reserved.
Product data sheet Rev. 4 — 16 September 2010 11 of 12
NXP Semiconductors PMBD7000
Double high-speed switching diode
Quick reference data — The Quick reference data is an extract of the
product data given in the Limiting values and Characteristics sections of this
document, and as such is not complete, exhaustive or legally binding.
13.4 Trademarks
Notice: All referenced b rands, produc t names, service names and trademarks
are the property of their respective ow ners.
14. Contact information
For more information, please visit: http://www.nxp.com
For sales office addresses, please send an email to: salesaddresses@nxp.com
NXP Semiconductors PMBD7000
Double high-speed switching diode
© NXP B.V. 2010. All rights reserved.
For more information, please visit: http://www.nxp.com
For sales office addresses, please send an email to: salesaddresses@nxp.com
Date of release: 16 September 2010
Document identifier: PMBD7 000
Please be aware that important notices concerning this document and the product(s)
described herein, have been included in section ‘Legal information’.
15. Contents
1 Product profile. . . . . . . . . . . . . . . . . . . . . . . . . . 1
1.1 General description . . . . . . . . . . . . . . . . . . . . . 1
1.2 Features and benefits. . . . . . . . . . . . . . . . . . . . 1
1.3 Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . 1
1.4 Quick reference data . . . . . . . . . . . . . . . . . . . . 1
2 Pinning information. . . . . . . . . . . . . . . . . . . . . . 2
3 Ordering information. . . . . . . . . . . . . . . . . . . . . 2
4 Marking. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2
5 Limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . 3
6 Thermal characteristics . . . . . . . . . . . . . . . . . . 3
7 Characteristics. . . . . . . . . . . . . . . . . . . . . . . . . . 4
8 Test information. . . . . . . . . . . . . . . . . . . . . . . . . 6
8.1 Quality information . . . . . . . . . . . . . . . . . . . . . . 6
9 Package outline . . . . . . . . . . . . . . . . . . . . . . . . . 7
10 Packing information . . . . . . . . . . . . . . . . . . . . . 7
11 Soldering . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8
12 Revision history. . . . . . . . . . . . . . . . . . . . . . . . . 9
13 Legal information. . . . . . . . . . . . . . . . . . . . . . . 10
13.1 Data sheet status . . . . . . . . . . . . . . . . . . . . . . 10
13.2 Definitions. . . . . . . . . . . . . . . . . . . . . . . . . . . . 10
13.3 Disclaimers. . . . . . . . . . . . . . . . . . . . . . . . . . . 10
13.4 Trademarks. . . . . . . . . . . . . . . . . . . . . . . . . . . 11
14 Contact information. . . . . . . . . . . . . . . . . . . . . 11
15 Contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12