TN0110N3-G-P002 - Microchip - Datasheet.Directory

Supertex inc.

www.supertex.com

Doc.# DSFP-TN0110

C080813

TN0110

Features

►Low threshold - 2.0V max.

►High input impedance

►Low input capacitance - 50pF typical

►Fast switching speeds

►Low on-resistance

►Free from secondary breakdown

►Low input and output leakage

Applications

►Logic level interfaces – ideal for TTL and CMOS

►Solid state relays

►Battery operated systems

►Photo voltaic drives

►Analog switches

►General purpose line drivers

►Telecom switches

General Description

This low threshold, enhancement-mode (normally-off)

transistor utilizes a vertical DMOS structure and Supertex’s

well-proven, silicon-gate manufacturing process. This

combination produces a device with the power handling

capabilities of bipolar transistors and the high input

impedance and positive temperature coefcient inherent

in MOS devices. Characteristic of all MOS structures, this

device is free from thermal runaway and thermally-induced

secondary breakdown.

Supertex’s vertical DMOS FETs are ideally suited to a

wide range of switching and amplifying applications where

very low threshold voltage, high breakdown voltage, high

input impedance, low input capacitance, and fast switching

speeds are desired.

N-Channel Enhancement-Mode

Vertical DMOS FET

YY = Year Sealed

WW = Week Sealed

= “Green” Packaging

SiTN

0110

YYWW

Product Marking

Package may or may not include the following marks: Si or

Absolute Maximum Ratings

Parameter Value

Drain-to-source voltage BVDSS

Drain-to-gate voltage BVDGS

Gate-to-source voltage ±20V

Operating and storage temperature -55OC to +150OC

Absolute Maximum Ratings are those values beyond which damage to the device may

occur. Functional operation under these conditions is not implied. Continuous operation

of the device at the absolute rating level may affect device reliability. All voltages are

referenced to device ground.

TO-92

GATE

SOURCE

DRAIN

TO-92

Pin Conguration

Typical Thermal Resistance

Package θja

TO-92 132OC/W

Ordering Information

Part Number Package Option Packing

TN0110N3-G TO-92 1000/Bag

TN0110N3-G P002

TO-92 2000/Reel

TN0110N3-G P003

TN0110N3-G P005

TN0110N3-G P013

TN0110N3-G P014

-G denotes a lead (Pb)-free / RoHS compliant package.

Contact factory for Wafer / Die availablity.

Devices in Wafer / Die form are lead (Pb)-free / RoHS compliant.

Product Summary

BVDSS/BVDGS

RDS(ON)

(max)

ID(ON)

(min)

VGS(th)

(max)

100V 3.0Ω2.0A 2.0V

2

Supertex inc.

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Doc.# DSFP-TN0110

C080813

TN0110

Electrical Characteristics (TA = 25OC unless otherwise specied)

Sym Parameter Min Typ Max Units Conditions

BVDSS Drain-to-source breakdown voltage 100 - - V VGS = 0V, ID = 1.0mA

VGS(th) Gate threshold voltage 0.6 - 2.0 V VGS = VDS, ID= 0.5mA

ΔVGS(th) Change in VGS(th) with temperature - -3.2 -5.0 mV/OC VGS = VDS, ID= 1.0mA

IGSS Gate body leakage - - 100 nA VGS = ± 20V, VDS = 0V

IDSS Zero Gate voltage drain current

- - 10 µA VGS = 0V, VDS = Max Rating

- - 500 µA VGS = 0V, VDS = 0.8 Max Rat-

ing, TA = 125°C

ID(ON) ON-state drain current 0.75 1.4 - AVGS = 5.0V, VDS = 25V

2.0 3.4 - VGS = 10V, VDS = 25V

RDS(ON) Static drain-to-source on-state resistance - 2.0 4.5 ΩVGS = 4.5V, ID = 250mA

- 1.6 3.0 VGS = 10V, ID = 500mA

ΔRDS(ON) Change in RDS(ON) with temperature - 0.6 1.1 %/OC VGS = 10V, ID = 500mA

GFS Forward transductance 225 400 - mmho VDS = 25V, ID = 500mA

CISS Input capacitance - 50 60

pF

VGS = 0V,

VDS = 25V,

f = 1.0MHz

COSS Common source output capacitance - 25 35

CRSS Reverse transfer capacitance - 4.0 8.0

td(ON) Turn-on delay time - 2.0 5.0

ns

VDD = 25V,

ID = 1.0A,

RGEN = 25Ω

trRise time - 3.0 5.0

td(OFF) Turn-off delay time - 6.0 7.0

tfFall time - 3.0 6.0

VSD Diode forward voltage drop 1.0 1.5 V VGS = 0V, ISD = 500mA

trr Reverse recovery time - 400 - ns VGS = 0V, ISD = 500mA

Notes:

1. All D.C. parameters 100% tested at 25OC unless otherwise stated. (Pulse test: 300µs pulse, 2% duty cycle.)

2. All A.C. parameters sample tested.

Switching Waveforms and Test Circuit

90%

10%

90% 90%

10%

Pulse

Generator

VDD

R

L

OUTPUT

D.U.T.

t

(ON)

t

d(ON)

t

(OFF)

t

d(OFF)

t

r

INPUT

OUTPUT

10V

VDD

R

GEN

0V

t

f

Notes:

† ID (continuous) is limited by max rated Tj .

Thermal Characteristics

Package ID

(continuous)†

ID

(pulsed)

Power Dissipation

@TC = 25OCIDR

†IDRM

TO-92 350mA 2.0A 1.0W 350mA 2.0A

3

Supertex inc.

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Doc.# DSFP-TN0110

C080813

TN0110

Typical Performance Curves

Output Characteristics

5.0

4.0

3.0

2.0

1.0

0

0 10 20 30 40 50

V

DS

(volts)

I

D

(amperes)

Saturation Characteristics

0 2.0 4.0 6.0 8.0 10

Maximum Rated Safe Operating Area

1.0 10 100 1000

10

1.0

0.1

0.01

V

DS

(volts)

Thermal Response Characteristics

Thermal Resistance (normalized)

1.0

0.8

0.6

0.4

0.2

0

0.001 0.01 0.1 1.0 10

t

p

(seconds)

Transconductance vs. Drain Current

0.5

0.4

0.3

0.2

0.1

0

0 0.6 1.2 1.8 2.4 3.0

G

FS

(siemens)

I

D

(amperes)

Power Dissipation vs. Case Temperature

0 25 50 75 100 125 150

2.0

1.0

0

T

C

(

O

C)

P

D

(watts)

V

DS

= 25V

TO-92

T

C

= 25

O

C

P

D

= 1W

TO-92 (DC)

TO-92 (pulsed)

8V

6V

4V

2V

T

A

= -55

O

C

V

GS

= 10V

T

C

= 25

O

C

V

DS

(volts)

8V

6V

4V

2V

V

GS

= 10V

I

D

(amperes)

T

A

= 25

O

C

T

A

= 150

O

C

I

D

(amperes)

5.0

4.0

3.0

2.0

1.0

0

4

Supertex inc.

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Doc.# DSFP-TN0110

C080813

TN0110

Typical Performance Curves (cont.)

Gate Drive Dynamic Characteristics

Q

G

(nanocoulombs)

V

GS

(volts) V

GS(th)

(normalized)

R

DS(ON)

(normalized)

V(th) and RDS Variation with Temperature

On-Resistance vs. Drain Current

I

D

(amperes)

R

DS(ON)

(ohms)

BV

DSS

Variation with Temperature

BV

DSS

(normalized)

T

j

(

O

C)

Transfer Characteristics

V

GS

(volts)

I

D

(amperes)

Capacitance vs. Drain-to-Source Voltage

100

75

50

25

0

C (picofarads)

V

DS

(volts)

0 10 20 30 40

0 2.0 4.0 6.0 8.0 10

3.0

2.4

1.8

1.2

0.6

0

-50 0 50 100 150

1.3

1.2

1.1

1.0

0.9

0.8

5.0

4.0

3.0

2.0

1.0

0 0 1.0 2.0 3.0 4.0 5.0

1.4

1.2

1.0

0.8

0.6

0.4

10

8.0

6.0

4.0

2.0

0

0 1.0 2.0 3.0 4.0 5.0

-50 0 50 100 150

f = 1.0MHz

50pF

VGS = 5.0V

VDS = 25V

TA = -55OC

25OC

150OC

V(th) @ 0.5mA

RDS(ON) @ 10V, 0.5A

CISS

COSS

CRSS

VDS = 10V

55pF

VGS = 10V

T

j

(

O

C)

VDS = 40V

1.4

1.2

1.0

0.8

0.6

0.4

Supertex inc. does not recommend the use of its products in life support applications, and will not knowingly sell them for use in such applications unless it receives

an adequate “product liability indemnification insurance agreement.” Supertex inc. does not assume responsibility for use of devices described, and limits its liability

to the replacement of the devices determined defective due to workmanship. No responsibility is assumed for possible omissions and inaccuracies. Circuitry and

specifications are subject to change without notice. For the latest product specifications refer to the Supertex inc. (website: http//www.supertex.com)

1235 Bordeaux Drive, Sunnyvale, CA 94089

Tel: 408-222-8888

www.supertex.com

5

TN0110

(The package drawing(s) in this data sheet may not reect the most current specications. For the latest package outline

information go to http://www.supertex.com/packaging.html.)

Doc.# DSFP-TN0110

C080813

3-Lead TO-92 Package Outline (N3)

Symbol A b c D E E1 e e1 L

Dimensions

(inches)

MIN .170 .014†.014†.175 .125 .080 .095 .045 .500

NOM - - - - - - - - -

MAX .210 .022†.022†.205 .165 .105 .105 .055 .610*

JEDEC Registration TO-92.

* This dimension is not specied in the JEDEC drawing.

† This dimension differs from the JEDEC drawing.

Drawings not to scale.

Supertex Doc.#: DSPD-3TO92N3, Version E041009.

Seating

Plane

1

2

3

Front View Side View

Bottom View

E1 E

D

e1

L

e

c

1 2 3

b

A