IRF634, SiHF634 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS (V) * Dynamic dV/dt Rating 250 RDS(on) () VGS = 10 V RoHS* Qg (Max.) (nC) 41 * Fast Switching Qgs (nC) 6.5 * Ease of Paralleling 22 * Simple Drive Requirements Qgd (nC) Configuration Single DESCRIPTION TO-220AB Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The TO-220AB package is universally preferred for all commercial-industrial applications at power dissipation levels to approximately 50 W. The low thermal resistance and low package cost of the TO-220AB contribute to its wide acceptance throughout the industry. G D COMPLIANT * Compliant to RoHS Directive 2002/95/EC D G Available * Repetitive Avalanche Rated 0.45 S S N-Channel MOSFET ORDERING INFORMATION Package TO-220AB IRF634PbF SiHF634-E3 IRF634 SiHF634 Lead (Pb)-free SnPb ABSOLUTE MAXIMUM RATINGS (TC = 25 C, unless otherwise noted) PARAMETER SYMBOL LIMIT Drain-Source Voltage VDS 250 Gate-Source Voltage VGS 20 Continuous Drain Current VGS at 10 V TC = 25 C TC = 100 C Pulsed Drain Currenta ID IDM Linear Derating Factor Single Pulse Avalanche Energyb UNIT V 8.1 5.1 A 32 0.59 W/C mJ EAS 300 Repetitive Avalanche Currenta IAR 8.1 A Repetitive Avalanche Energya EAR 7.4 mJ Maximum Power Dissipation TC = 25 C Peak Diode Recovery dV/dtc Operating Junction and Storage Temperature Range Soldering Recommendations (Peak Temperature) Mounting Torque for 10 s 6-32 or M3 screw PD 74 W dV/dt 4.8 V/ns TJ, Tstg - 55 to + 150 300d C 10 lbf * in 1.1 N*m Notes a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11). b. VDD = 50 V, starting TJ = 25 C, L = 7.3 mH, Rg = 25 , IAS = 8.1 A (see fig. 12). c. ISD 8.1 A, dI/dt 120 A/s, VDD VDS, TJ 150 C. d. 1.6 mm from case. * Pb containing terminations are not RoHS compliant, exemptions may apply Document Number: 91034 S11-0509-B, 21-Mar-11 www.vishay.com 1 This datasheet is subject to change without notice. THE PRODUCT DESCRIBED HEREIN AND THIS DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 IRF634, SiHF634 Vishay Siliconix THERMAL RESISTANCE RATINGS PARAMETER SYMBOL TYP. MAX. Maximum Junction-to-Ambient RthJA - 62 Case-to-Sink, Flat, Greased Surface RthCS 0.50 - Maximum Junction-to-Case (Drain) RthJC - 1.7 UNIT C/W SPECIFICATIONS (TJ = 25 C, unless otherwise noted) PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNIT Static Drain-Source Breakdown Voltage VDS Temperature Coefficient VDS VGS = 0 V, ID = 250 A 250 - - V VDS/TJ Reference to 25 C, ID = 1 mA - 0.37 - V/C VGS(th) VDS = VGS, ID = 250 A 2.0 - 4.0 V Gate-Source Leakage IGSS VGS = 20 V - - 100 nA Zero Gate Voltage Drain Current IDSS VDS = 250 V, VGS = 0 V - - 25 VDS = 200 V, VGS = 0 V, TJ = 125 C - - 250 Gate-Source Threshold Voltage Drain-Source On-State Resistance Forward Transconductance RDS(on) gfs ID = 5.1 Ab VGS = 10 V VDS = 50 V, ID = 5.1 Ab A - - 0.45 1.6 - - S - 770 - - 190 - - 52 - - - 41 Dynamic Input Capacitance Ciss Output Capacitance Coss Reverse Transfer Capacitance Crss Total Gate Charge Qg Gate-Source Charge Qgs - - 6.5 Gate-Drain Charge Qgd - - 22 Turn-On Delay Time td(on) - 9.6 - tr - 21 - - 42 - - 19 - - 4.5 - - 7.5 - - - 8.1 - - 32 - - 2.0 - 220 440 ns - 1.2 2.4 C Rise Time Turn-Off Delay Time Fall Time td(off) VGS = 0 V, VDS = 25 V, f = 1.0 MHz, see fig. 5 VGS = 10 V ID = 5.6 A, VDS = 200 V, see fig. 6 and 13b VDD = 125 V, ID = 5.6 A, Rg = 12 , RD = 22, see fig. 10b tf Internal Drain Inductance LD Internal Source Inductance LS Between lead, 6 mm (0.25") from package and center of die contact D pF nC ns nH G S Drain-Source Body Diode Characteristics Continuous Source-Drain Diode Current IS Pulsed Diode Forward Currenta ISM Body Diode Voltage VSD Body Diode Reverse Recovery Time trr Body Diode Reverse Recovery Charge Qrr Forward Turn-On Time ton MOSFET symbol showing the integral reverse p - n junction diode D A G S TJ = 25 C, IS = 8.1 A, VGS = 0 Vb TJ = 25 C, IF = 5.6 A, dI/dt = 100 A/sb V Intrinsic turn-on time is negligible (turn-on is dominated by LS and LD) Notes a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11). b. Pulse width 300 s; duty cycle 2 %. www.vishay.com 2 Document Number: 91034 S11-0509-B, 21-Mar-11 This datasheet is subject to change without notice. THE PRODUCT DESCRIBED HEREIN AND THIS DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 IRF634, SiHF634 Vishay Siliconix TYPICAL CHARACTERISTICS (25 C, unless otherwise noted) VGS 15 V 10 V 8.0 V 7.0 V 6.0 V 5.5 V 5.0 V Bottom 4.5 V 101 100 4.5 V ID, Drain Current (A) ID, Drain Current (A) Top 20 s Pulse Width TC = 25 C 100 10-1 150 C 4 100 20 s Pulse Width TC = 150 C 100 91034_02 101 VDS, Drain-to-Source Voltage (V) Fig. 2 - Typical Output Characteristics, TC = 150 C Document Number: 91034 S11-0509-B, 21-Mar-11 6 7 8 9 10 Fig. 3 - Typical Transfer Characteristics RDS(on), Drain-to-Source On Resistance (Normalized) ID, Drain Current (A) 4.5 V 5 VGS, Gate-to-Source Voltage (V) 91034_03 Top 101 20 s Pulse Width VDS = 50 V 10-1 Fig. 1 - Typical Output Characteristics, TC = 25 C VGS 15 V 10 V 8.0 V 7.0 V 6.0 V 5.5 V 5.0 V Bottom 4.5 V 25 C 100 101 VDS, Drain-to-Source Voltage (V) 91034_01 101 91034_04 3.0 2.5 ID = 5.6 A VGS = 10 V 2.0 1.5 1.0 0.5 0.0 - 60 - 40 - 20 0 20 40 60 80 100 120 140 160 TJ, Junction Temperature (C) Fig. 4 - Normalized On-Resistance vs. Temperature www.vishay.com 3 This datasheet is subject to change without notice. THE PRODUCT DESCRIBED HEREIN AND THIS DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 IRF634, SiHF634 1750 VGS = 0 V, f = 1 MHz Ciss = Cgs + Cgd, Cds Shorted Crss = Cgd Coss = Cds + Cgd Capacitance (pF) 1400 1050 Ciss 700 Coss 350 Crss ISD, Reverse Drain Current (A) Vishay Siliconix 101 150 C 100 0 VGS = 0 V 10-1 100 101 0.4 VDS, Drain-to-Source Voltage (V) 91034_05 20 Operation in this area limited by RDS(on) 5 VDS = 200 V ID, Drain Current (A) 2 VDS = 125 V VDS = 50 V 8 4 102 5 10 s 2 10 100 s 5 1 ms 2 1 10 ms 5 For test circuit see figure 13 0 0 91034_06 10 20 30 40 QG, Total Gate Charge (nC) TC = 25 C TJ = 150 C Single Pulse 2 0.1 1 50 Fig. 6 - Typical Gate Charge vs. Gate-to-Source Voltage www.vishay.com 4 1.2 1.0 VSD, Source-to-Drain Voltage (V) 103 16 0.8 Fig. 7 - Typical Source-Drain Diode Forward Voltage ID = 5.6 A 12 0.6 91034_07 Fig. 5 - Typical Capacitance vs. Drain-to-Source Voltage VGS, Gate-to-Source Voltage (V) 25 C 91034_08 2 5 10 2 5 102 2 5 103 VDS, Drain-to-Source Voltage (V) Fig. 8 - Maximum Safe Operating Area Document Number: 91034 S11-0509-B, 21-Mar-11 This datasheet is subject to change without notice. THE PRODUCT DESCRIBED HEREIN AND THIS DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 IRF634, SiHF634 Vishay Siliconix RD VDS VGS 10 8 ID, Drain Current (A) D.U.T. RG + - VDD 10 V Pulse width 1 s Duty factor 0.1 % 6 Fig. 10a - Switching Time Test Circuit 4 2 VDS 90 % 0 25 50 75 100 125 150 TC, Case Temperature (C) 91034_09 10 % VGS td(on) Fig. 9 - Maximum Drain Current vs. Case Temperature td(off) tf tr Fig. 10b - Switching Time Waveforms Thermal Response (ZthJC) 10 1 0 - 0.5 0.2 0.1 PDM 0.1 0.05 t1 0.02 0.01 t2 Single Pulse (Thermal Response) Notes: 1. Duty Factor, D = t1/t2 2. Peak Tj = PDM x ZthJC + TC 10-2 10-5 91034_11 10-4 10-3 10-2 0.1 1 10 t1, Rectangular Pulse Duration (s) Fig. 11 - Maximum Effective Transient Thermal Impedance, Junction-to-Case Document Number: 91034 S11-0509-B, 21-Mar-11 www.vishay.com 5 This datasheet is subject to change without notice. THE PRODUCT DESCRIBED HEREIN AND THIS DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 IRF634, SiHF634 Vishay Siliconix VDS L Vary tp to obtain required IAS VDS tp VDD D.U.T RG + - IAS V DD VDS A 10 V 0.01 tp IAS Fig. 12a - Unclamped Inductive Test Circuit Fig. 12b - Unclamped Inductive Waveforms EAS, Single Pulse Energy (mJ) 700 ID 3.6 A 5.1 A Bottom 8.1 A Top 600 500 400 300 200 100 0 VDD = 50 V 25 91034_12c 50 75 100 125 150 Starting TJ, Junction Temperature (C) Fig. 12c - Maximum Avalanche Energy vs. Drain Current Current regulator Same type as D.U.T. 50 k QG 10 V 12 V 0.2 F 0.3 F QGS QGD + D.U.T. VG - VDS VGS 3 mA Charge IG ID Current sampling resistors Fig. 13a - Basic Gate Charge Waveform www.vishay.com 6 Fig. 13b - Gate Charge Test Circuit Document Number: 91034 S11-0509-B, 21-Mar-11 This datasheet is subject to change without notice. THE PRODUCT DESCRIBED HEREIN AND THIS DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 IRF634, SiHF634 Vishay Siliconix Peak Diode Recovery dV/dt Test Circuit + D.U.T. Circuit layout considerations * Low stray inductance * Ground plane * Low leakage inductance current transformer + - - Rg * * * * + dV/dt controlled by Rg Driver same type as D.U.T. ISD controlled by duty factor "D" D.U.T. - device under test + - VDD Driver gate drive P.W. Period D= P.W. Period VGS = 10 Va D.U.T. lSD waveform Reverse recovery current Body diode forward current dI/dt D.U.T. VDS waveform Diode recovery dV/dt Re-applied voltage Inductor current VDD Body diode forward drop Ripple 5 % ISD Note a. VGS = 5 V for logic level devices Fig. 14 - For N-Channel Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see www.vishay.com/ppg?91034. Document Number: 91034 S11-0509-B, 21-Mar-11 www.vishay.com 7 This datasheet is subject to change without notice. THE PRODUCT DESCRIBED HEREIN AND THIS DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Package Information www.vishay.com Vishay Siliconix TO-220-1 A E DIM. Q H(1) D 3 2 L(1) 1 M* L b(1) INCHES MIN. MAX. MIN. MAX. A 4.24 4.65 0.167 0.183 b 0.69 1.02 0.027 0.040 b(1) 1.14 1.78 0.045 0.070 F OP MILLIMETERS c 0.36 0.61 0.014 0.024 D 14.33 15.85 0.564 0.624 E 9.96 10.52 0.392 0.414 e 2.41 2.67 0.095 0.105 e(1) 4.88 5.28 0.192 0.208 F 1.14 1.40 0.045 0.055 H(1) 6.10 6.71 0.240 0.264 0.115 J(1) 2.41 2.92 0.095 L 13.36 14.40 0.526 0.567 L(1) 3.33 4.04 0.131 0.159 OP 3.53 3.94 0.139 0.155 Q 2.54 3.00 0.100 0.118 ECN: X15-0364-Rev. C, 14-Dec-15 DWG: 6031 Note * M* = 0.052 inches to 0.064 inches (dimension including protrusion), heatsink hole for HVM C b e J(1) e(1) Package Picture ASE Revison: 14-Dec-15 Xi'an Document Number: 66542 1 For technical questions, contact: hvm@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. 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No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by any conduct of Vishay. Product names and markings noted herein may be trademarks of their respective owners. (c) 2017 VISHAY INTERTECHNOLOGY, INC. ALL RIGHTS RESERVED Revision: 08-Feb-17 1 Document Number: 91000 Mouser Electronics Authorized Distributor Click to View Pricing, Inventory, Delivery & Lifecycle Information: Vishay: IRF634 IRF634PBF