NTE2519 (NPN) & NTE2520 (PNP)
Silicon Complementary Transistors
High Voltage Driver
Features:
DHigh Breakdown Voltage
DLarge Current Capacity
DIsolated Package
Applications:
DColor TV Audio Output
DConverters
DInverters
Absolute Maximum Ratings: (TA = +25°C unless otherwise specified)
Collector to Base Voltage, VCBO 180V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Collector to Emitter Voltage, VCEO 160V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Emitter to Base Voltage, VEBO 6V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Collector Current, IC
Continuous 1.5A. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Peak 2.5A. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Collector Dissipation, PC
TA = +25°C 1.5W. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
TC = +25°C 10W. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Operating Junction Temperature, TJ+150°C. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Storage Temperature Range, Tstg –55° to +150°C. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Electrical Characteristics: (TA = +25°C unless otherwise specified)
Parameter Symbol Test Conditions Min Typ Max Unit
Collector Cutoff Current ICBO VCB = 120V, IE = 0 – – 1.0 µA
Emitter Cutoff Current IEBO VEB = 4V, IC = 0 – – 1.0 µA
DC Current Gain hFE VCE = 5V, IC = 100mA 140 – 400
VCE = 5V, IC = 10mA 90 – –
Gain Bandwidth Product fTVCE = 10V, IC = 50mA – 120 – MHz
Electrical Characteristics (Cont’d): (TA = +25°C unless otherwise specified)
Parameter Symbol Test Conditions Min Typ Max Unit
Output Capacitance
NTE2519 Cob VCB = 10V, f = 1MHz –14 –pF
NTE2520 –22 –pF
Collector to Emitter Saturation Voltage
NTE2519 VCE(sat) IC = 500mA, IB = 50mA –0.13 0.45 V
NTE2520 –0.2 0.5 V
Base to Emitter Saturation Voltage VBE(sat) IC = 500mA, IB = 50mA –0.85 1.2 V
Collector to Base Breakdown Voltage V(BR)CBO IC = 10µA, IE = 0 180 – – V
Collector to Emitter Breakdown Voltage V(BR)CEO IC = 1mA, RBE = ∞160 – – V
Emitter to Base Breakdown Voltage V(BR)EBO IE = 10µA, IC = 0 6– – V
Rise Time ton IC = 10A, IB1 = 10A, –0.04 –µs
Storage Time
NTE2519 tstg
IB2 = 700mA, Note 1 –1.2 –µs
NTE2520 –0.7 –µs
Fall Time
NTE2519 tf–0.08 –µs
NTE2520 –0.04 –µs
Note 1. Pulse Width = 20µs, Duty Cycle ≤ 1%.
ECB
.315 (8.0) .130
(3.3)
.295
(7.5)
.433
(11.0)
.610
(15.5)
.118 (3.0)
Dia
.094 (2.4)
