REV. D
Information furnished by Analog Devices is believed to be accurate and
reliable. However, no responsibility is assumed by Analog Devices for its
use, nor for any infringements of patents or other rights of third parties
which may result from its use. No license is granted by implication or
otherwise under any patent or patent rights of Analog Devices.
a
AD8002
One Technology Way, P.O. Box 9106, Norwood, MA 02062-9106, U.S.A.
Tel: 781/329-4700 World Wide Web Site: www.analog.com
Fax: 781/326-8703 © Analog Devices, Inc., 2001
Dual 600 MHz, 50 mW
Current Feedback Amplifier
FEATURES
Excellent Video Specifications (RL = 150 , G = +2)
Gain Flatness 0.1 dB to 60 MHz
0.01% Differential Gain Error
0.02 Differential Phase Error
Low Power
5.5 mA/Amp Max Power Supply Current (55 mW)
High Speed and Fast Settling
600 MHz, –3 dB Bandwidth (G = +1)
500 MHz, –3 dB Bandwidth (G = +2)
1200 V/s Slew Rate
16 ns Settling Time to 0.1%
Low Distortion
–65 dBc THD, fC = 5 MHz
33 dBm Third Order Intercept, F1 = 10 MHz
–66 dB SFDR, f = 5 MHz
–60 dB Crosstalk, f = 5 MHz
High Output Drive
Over 70 mA Output Current
Drives Up to Eight Back-Terminated 75 Loads
(Four Loads/Side) While Maintaining Good
Differential Gain/Phase Performance (0.01%/0.17)
Available in 8-Lead Plastic DIP, SOIC and SOIC Packages
APPLICATIONS
A-to-D Driver
Video Line Driver
Differential Line Driver
Professional Cameras
Video Switchers
Special Effects
RF Receivers
FUNCTIONAL BLOCK DIAGRAM
8-Lead Plastic DIP, SOIC, and SOIC
OUT1
–IN1
+IN1
V–
V+
OUT2
–IN2
+IN2
1
2
3
4
8
7
6
5
AD8002
PRODUCT DESCRIPTION
The AD8002 is a dual, low-power, high-speed amplifier designed
to operate on ±5 V supplies. The AD8002 features unique trans-
impedance linearization circuitry. This allows it to drive video
loads with excellent differential gain and phase performance on
only 50 mW of power per amplifier. The AD8002 is a current
feedback amplifier and features gain flatness of 0.1 dB to 60 MHz
while offering differential gain and phase error of 0.01% and
0.02°. This makes the AD8002 ideal for professional video
electronics such as cameras and video switchers. Additionally,
the AD8002’s low distortion and fast settling make it ideal for
buffer high-speed A-to-D converters.
The AD8002 offers low power of 5.5 mA/amplifier max (V
S
=
±5 V) and can run on a single 12 V power supply, while capable
of delivering over 70 mA of load current. It is offered in an
8-lead plastic DIP, SOIC, and µSOIC package. These features
make this amplifier ideal for portable and battery-powered
applications where size and power are critical.
The outstanding bandwidth of 600 MHz along with 1200 V/µs
of slew rate make the AD8002 useful in many general purpose
high speed applications where dual power supplies of up to ±6 V
and single supplies from 6 V to 12 V are needed. The AD8002 is
available in the industrial temperature range of –40°C to +85°C.
1M 10M 1G100M
0
0.5
0.1
0.2
0.3
0.4
0.1
1
4
9
5
6
7
8
3
2
1
0
NORMALIZED FLATNESS dB
FREQUENCY Hz
NORMALIZED FREQUENCY RESPONSE dB
SIDE 1
SIDE 2
SIDE 1
SIDE 2
G = +2
RL = 100
VIN = 50mV
Figure 1. Frequency Response and Flatness, G = +2
G = +2
1V STEP
SIDE 1
200mV
SIDE 2
5ns
Figure 2. 1 V Step Response, G = +1
REV. D
–2–
AD8002–SPECIFICATIONS
(@ T
A
= 25C, V
S
= 5 V, R
L
= 100
, R
C1
= 75
, unless otherwise noted.)
Model AD8002A
Conditions Min Typ Max Unit
DYNAMIC PERFORMANCE
–3 dB Small Signal Bandwidth, N Package G = +2, R
F
= 750 500 MHz
G = +1, R
F
= 1.21 k600 MHz
R Package G = +2, R
F
= 681 500 MHz
G = +1, R
F
= 953 600 MHz
RM Package G = +2, R
F
= 681 500 MHz
G = +1, R
F
= 1 k600 MHz
Bandwidth for 0.1 dB Flatness
N Package G = +2, R
F
= 750 60 MHz
R Package G = +2, R
F
= 681 90 MHz
RM Package G = +2, R
F
= 681 60 MHz
Slew Rate G = +2, V
O
= 2 V Step 700 V/µs
G = –1, V
O
= 2 V Step 1200 V/µs
Settling Time to 0.1% G = +2, V
O
= 2 V Step 16 ns
Rise and Fall Time G = +2, V
O
= 2 V Step, R
F
= 750 2.4 ns
NOISE/HARMONIC PERFORMANCE
Total Harmonic Distortion f
C
= 5 MHz, V
O
= 2 V p-p –65 dBc
G = +2, R
L
= 100
Crosstalk, Output to Output f = 5 MHz, G = +2 –60 dB
Input Voltage Noise f = 10 kHz, R
C
= 0 2.0 nV/Hz
Input Current Noise f = 10 kHz, +In 2.0 pA/Hz
–In 18 pA/Hz
Differential Gain Error NTSC, G = +2, R
L
= 150 0.01 %
Differential Phase Error NTSC, G = +2, R
L
= 150 0.02 Degree
Third Order Intercept f = 10 MHz 33 dBm
1 dB Gain Compression f = 10 MHz 14 dBm
SFDR f = 5 MHz –66 dB
DC PERFORMANCE
Input Offset Voltage 2.0 6 mV
T
MIN
–T
MAX
2.0 9 mV
Offset Drift 10 µV/°C
–Input Bias Current 5.0 25 ±µA
T
MIN
–T
MAX
35 ±µA
+Input Bias Current 3.0 6.0 ±µA
T
MIN
–T
MAX
10 ±µA
Open Loop Transresistance V
O
= ±2.5 V 250 900 k
T
MIN
–T
MAX
175 k
INPUT CHARACTERISTICS
Input Resistance +Input 10 M
–Input 50
Input Capacitance +Input 1.5 pF
Input Common-Mode Voltage Range 3.2 ±V
Common-Mode Rejection Ratio
Offset Voltage V
CM
= ±2.5 V 49 54 dB
–Input Current V
CM
= ±2.5 V, T
MIN
–T
MAX
0.3 1.0 µA/V
+Input Current V
CM
= ±2.5 V, T
MIN
–T
MAX
0.2 0.9 µA/V
OUTPUT CHARACTERISTICS
Output Voltage Swing R
L
= 150 2.7 3.1 ±V
Output Current
2
70 mA
Short Circuit Current
2
85 110 mA
POWER SUPPLY
Operating Range ±3.0 ±6.0 V
Quiescent Current/Both Amplifiers T
MIN
–T
MAX
10.0 11.5 mA
Power Supply Rejection Ratio +V
S
= +4 V to +6 V, –V
S
= –5 V 60 75 dB
–V
S
= – 4 V to –6 V, +V
S
= +5 V 49 56 dB
–Input Current T
MIN
–T
MAX
0.5 2.5 µA/V
+Input Current T
MIN
–T
MAX
0.1 0.5 µA/V
NOTES
1
R
C
is recommended to reduce peaking and minimize input reflections at frequencies above 300 MHz. However, R
C
is not required.
2
Output current is limited by the maximum power dissipation in the package. See the power derating curves.
Specifications subject to change without notice.
REV. D
AD8002
–3–
ABSOLUTE MAXIMUM RATINGS
1
Supply Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13.2 V
Internal Power Dissipation
2
Plastic DIP Package (N) . . . . . . . . . . . . . . . . . . . . . . . 1.3 W
Small Outline Package (R) . . . . . . . . . . . . . . . . . . . . . . 0.9 W
µSOIC Package (RM) . . . . . . . . . . . . . . . . . . . . . . . . . 0.6 W
Input Voltage (Common Mode) . . . . . . . . . . . . . . . . . . . . ±V
S
Differential Input Voltage . . . . . . . . . . . . . . . . . . . . . . . ±1.2 V
Output Short Circuit Duration
. . . . . . . . . . . . . . . . . . . . . . Observe Power Derating Curves
Storage Temperature Range N, R, RM . . . . . –65°C to +125°C
Operating Temperature Range (A Grade) . . . 40°C to +85°C
Lead Temperature Range (Soldering 10 sec) . . . . . . . . . 300°C
NOTES
1
Stresses above those listed under Absolute Maximum Ratings may cause perma-
nent damage to the device. This is a stress rating only; functional operation of the
device at these or any other conditions above those indicated in the operational
section of this specification is not implied. Exposure to absolute maximum rating
conditions for extended periods may affect device reliability.
2
Specification is for device in free air:
8-Lead Plastic DIP Package: θ
JA
= 90°C/W
8-Lead SOIC Package: θ
JA
= 155°C/W
8-Lead µSOIC Package: θ
JA
= 200°C/W
MAXIMUM POWER DISSIPATION
The maximum power that can be safely dissipated by the
AD8002 is limited by the associated rise in junction tempera-
ture. The maximum safe junction temperature for plastic
encapsulated devices is determined by the glass transition tem-
perature of the plastic, approximately 150°C. Exceeding this
limit temporarily may cause a shift in parametric performance
due to a change in the stresses exerted on the die by the package.
Exceeding a junction temperature of 175°C for an extended
period can result in device failure.
While the AD8002 is internally short circuit protected, this
may not be sufficient to guarantee that the maximum junction
temperature (150°C) is not exceeded under all conditions. To
ensure proper operation, it is necessary to observe the maximum
power derating curves.
2.0
0
50 80
1.5
0.5
40
1.0
010 10 20 30 20 30 40 50 60 70 90
MAXIMUM POWER DISSIPATION W
AMBIENT TEMPERATURE C
8-LEAD PLASTIC-DIP PACKAGE
8-LEAD SOIC PACKAGE
TJ = 150C
8-LEAD SOIC
PACKAGE
Figure 3. Plot of Maximum Power Dissipation vs.
Temperature
CAUTION
ESD (electrostatic discharge) sensitive device. Electrostatic charges as high as 4000 V readily
accumulate on the human body and test equipment and can discharge without detection.
Although the AD8002 features proprietary ESD protection circuitry, permanent damage may
occur on devices subjected to high-energy electrostatic discharges. Therefore, proper ESD
precautions are recommended to avoid performance degradation or loss of functionality.
ORDERING GUIDE
Model Temperature Range Package Description Package Option Brand Code
AD8002AN –40°C to +85°C 8-Lead PDIP N-8 Standard
AD8002AR –40°C to +85°C 8-Lead SOIC SO-8 Standard
AD8002AR-REEL –40°C to +85°C 8-Lead SOIC 13" REEL SO-8 Standard
AD8002AR-REEL7 –40°C to +85°C 8-Lead SOIC 7" REEL SO-8 Standard
AD8002ARM –40°C to +85°C 8-Lead µSOIC RM-8 HFA
AD8002ARM-REEL –40°C to +85°C 8-Lead µSOIC 13" REEL RM-8 HFA
AD8002ARM-REEL7 –40°C to +85°C 8-Lead µSOIC 7" REEL RM-8 HFA
WARNING!
ESD SENSITIVE DEVICE
REV. D
AD8002
–4–
PULSE
GENERATOR
953
+5V
R
L
= 100
5V
50
V
IN
0.1F
10F
AD8002
0.1F
10F
T
R
/T
F
= 250ps
75
TPC 1. Test Circuit , Gain = +1
G = +1
100mV STEP
SIDE 1
20mV
SIDE 2
5ns
TPC 2. 100 mV Step Response, G = +1
G = +1
1V STEP
SIDE 1
200mV
SIDE 2
5ns
TPC 3. 1 V Step Response, G = +1
Typical Performance Characteristics
PULSE
GENERATOR
750
+5V
RL = 100
5V
50
VIN
0.1F
10F
AD8002
0.1F
10F
TR/TF = 250ps
75
750
TPC 4. Test Circuit, Gain = +2
G = +2
100mV STEP
SIDE 1
20mV
SIDE 2
5ns
TPC 5. 100 mV Step Response, G = +2
G = +2
1V STEP
SIDE 1
20mV
SIDE 2
5ns
TPC 6. 1 V Step Response, G = +2
REV. D
AD8002
–5–
1M 10M 1G100M
0
0.5
0.1
0.2
0.3
0.4
0.1
1
4
9
5
6
7
8
3
2
1
0
NORMALIZED FLATNESS dB
FREQUENCY Hz
NORMALIZED FREQUENCY RESPONSE dB
G = +2
RL = 100
VIN = 50mV
SIDE 1
SIDE 2
SIDE 1
SIDE 2
75
50
50
RF
681
681
TPC 7. Frequency Response and Flatness, G = +2
FREQUENCY Hz
50
60
DISTORTION dBc
110
10k 100M100k 1M 10M
70
80
100
90
2ND HARMONIC
3RD HARMONIC
G = +2
RL = 100
TPC 8. Distortion vs. Frequency, G = +2, R
L
= 100
FREQUENCY Hz
60
DISTORTION dBc
110
10k 100M100k 1M 10M
70
80
100
90
2ND HARMONIC
3RD HARMONIC
G = +2
R
L
= 1k
V
OUT
= 2V p-p
120
TPC 9. Distortion vs. Frequency, G = +2, R
L
= 1 k
70
1M 100M10M100k
60
100
90
80
OUTPUT SIDE 1
OUTPUT SIDE 2
CROSSTALK dB
50
40
30
20
110
120
FREQUENCY Hz
V
IN
= 4dBV
R
L
= 100
V
S
= 5.0V
G = +2
R
F
= 750
TPC 10. Crosstalk (Output-to-Output) vs. Frequency
NOTES: SIDE 1: V
IN
= 0V; 8mV/div RTO
SIDE 2: 1V STEP RTO; 400mV/div
G = + 2
R
F
= 750
R
C
= 75
R
L
= 100
SIDE 1
SIDE 2
5ns
TPC 11. Pulse Crosstalk, Worst Case, 1 V Step
0.02
0.06
0.02
1
0.04
0.02
0.08
0.01
0.00
0.01
IRE
DIFF GAIN %
DIFF PHASE Degrees
0.00
G = +2
RF = 750
NTSC
234567891011
2 BACK-TERMINATED
LOADS (75)
1 BACK-TERMINATED
LOAD (150)
2 BACK-TERMINATED
LOADS (75)
1 BACK-TERMINATED
LOAD (150)
TPC 12. Differential Gain and Differential Phase
(per Amplifier)
REV. D
AD8002
–6–
2
1
4
3
0
1
2
5
6
10M 1G100M1M
FREQUENCY Hz
GAIN dB
SIDE 1
SIDE 2
75
50
50
953
VIN = 50mV
G = +1
RF = 953
RL = 100
TPC 13. Frequency Response, G = +1
40
70
100
80
90
60
50
100k 100M10M1M10k
FREQUENCY Hz
DISTORTION dBc
G = +1
RL = 100
VOUT = 2V p-p
2ND HARMONIC
3RD HARMONIC
TPC 14. Distortion vs. Frequency, G = +1, R
L
= 100
40
60
110
50
80
70
100
90
100k 100M10M1M10k
FREQUENCY Hz
DISTORTION dBc
G = +1
RL = 1k
3RD HARMONIC
2ND HARMONIC
TPC 15. Distortion vs. Frequency, G = +1, R
L
= 1 k
0
3
27
10M 500M100M
18
21
24
15
12
9
6
INPUT LEVEL dBV
FREQUENCY Hz
6
3
0
3
6
9
12
15
18
21
OUTPUT LEVEL dBV
1M
G = +2
R
F
= 681
V
S
= 5V
R
L
= 100
TPC 16. Large Signal Frequency Response, G = +2
INPUT/OUTPUT LEVEL dBV
FREQUENCY Hz
6
3
27
12
15
18
9
6
3
0
9
10M 500M100M1M
RL = 100
G = +1
RF = 1.21k
75
50
50
1.21k
TPC 17. Large Signal Frequency Response, G = +1
25
10
5
1M 10M 100M
0
5
15
20
FREQUENCY Hz
GAIN dB
1G
45
30
35
40
G = +100
R
F
= 1000
G = +10
R
F
= 499
V
S
= 5V
R
L
= 100
TPC 18. Frequency Response, G = +10, G = +100
REV. D
AD8002
–7–
G = +2
2V STEP
RF = 750
RC = 75
OUTPUT
ERROR,
(0.05%/DIV)
INPUT
10ns400mV
TPC 19. Short-Term Settling Time
3.4
2.5
125
2.7
2.6
3555
2.8
2.9
3.0
3.1
3.2
3.3
10585654525515
JUNCTION TEMPERATURE
C
OUTPUT SWING Volts
+V
OUT
|V
OUT
|
V
S
= 5V
R
L
= 150
+V
OUT
|V
OUT
|
V
S
= 5V
R
L
= 50
TPC 20. Output Swing vs. Temperature
5
3
1
2
1
0
2
3
4
1253555 10585654525515
JUNCTION TEMPERATURE C
INPUT BIAS CURRENT A
IN
+IN
TPC 21. Input Bias Current vs. Temperature
ERROR,
(0.05%/DIV)
G = +2
2V STEP
RF = 750
RC = 75
RL = 100
OUTPUT
INPUT
400mV
TPC 22. Long-Term Settling Time
4
3
0
2
1
3
1
2
1253555 10585654525515
JUNCTION TEMPERATURE C
INPUT OFFSET VOLTAGE mV
DEVICE #1
DEVICE #2
DEVICE #3
TPC 23. Input Offset Voltage vs. Temperature
11.5
9.0
125
10.5
9.5
35
10.0
55
11.0
10585654525515
JUNCTION TEMPERATURE
C
TOTAL SUPPLY CURRENT mA
V
S
= 5V
TPC 24. Total Supply Current vs. Temperature
REV. D
AD8002
–8–
120
75
125
85
80
3555
90
95
100
105
110
115
10585654525515
JUNCTION TEMPERATURE
C
SHORT CIRCUIT CURRENT mA
|SINK I
SC
|SOURCE I
SC
70
TPC 25. Short Circuit Current vs. Temperature
100
10
1
10 100 100k
10k 1k
FREQUENCY Hz
100
10
1
NOISE VOLTAGE nV/ Hz
NOISE CURRENT pA/ Hz
INVERTING CURRENT V
S
= 5V
NONINVERTING CURRENT V
S
= 5V
VOLTAGE NOISE V
S
= 5V
TPC 26. Noise vs. Frequency
48
56
54
55
52
53
51
50
49
1253555 10585654525515
JUNCTION TEMPERATURE
C
CMRR dB
CMRR
+CMRR
TPC 27. CMRR vs. Temperature
FREQUENCY Hz
1
10k 100k 1G100M10M1M
10
100
0.01
0.1
RESISTANCE
R
F
= 750
R
C
= 75
V
S
= 5.0V
POWER = 0dBm
(223.6mVrms)
G = +2
R
bT
= 0
R
bT
= 50
TPC 28. Output Resistance vs. Frequency
1
4
9
1M 10M 1G100M
5
6
7
8
3
2
1
0
FREQUENCY Hz
OUTPUT VOLTAGE dB
0
0.1
0.2
0.3
0.1
0.2
3dB BANDWIDTH
0.1dB FLATNESS
SIDE 1
SIDE 1
SIDE 2
SIDE 2
VS = 5V
VIN = 50mV
G = 1
RL = 100
RF = 549
TPC 29. –3 dB Bandwidth vs. Frequency, G = –1
50.0
72.5
125
67.5
70.0
3555
65.0
62.5
60.0
57.5
55.0
52.5
10585654525515
JUNCTION TEMPERATURE
C
PSRR dB
75.0
PSRR
+PSRR
2V SPAN
CURVES ARE FOR WORST-
CASE CONDITION WHERE
ONE SUPPLY IS VARIED
WHILE THE OTHER IS
HELD CONSTANT.
TPC 30. PSRR vs. Temperature
REV. D
AD8002
–9–
100M 10M 1M
FREQUENCY Hz
40
30
CMRR dB
1G
50
60
20
10
0
604
V
IN
154
154
604
50
57.6
5V
0.1F
V
S
= 5.0V
R
L
= 100
V
IN
= 200mV
SIDE 1
SIDE 2
TPC 31. CMRR vs. Frequency
G = 1
R
F
= 576
R
G
= 576
R
C
= 50
5ns
400mV
SIDE 1
SIDE 2
TPC 32. 2 V Step Response, G = –1
54.9
50
50
576
576
G = 1
R
F
= 576
R
G
= 576
R
C
= 50
R
L
= 100
5ns
20mV
SIDE 1
SIDE 2
TPC 33. 100 mV Step Response, G = –1
20
50
100k 1M 10M
40
30
10
FREQUENCY Hz
PSRR dB
90
80
70
60
100M
0
30k 500M
+PSRR
PSRR
VIN = 200mV
G = +2
TPC 34. PSRR vs. Frequency
G = 2
2V STEP
RF = 549
5ns400mV
SIDE 1
SIDE 2
TPC 35. 2 V Step Response, G = –2
61.9
50
50
549
274
G = 1
100mV STEP
RF = 549
5ns
20mV
SIDE 1
SIDE 2
TPC 36. 100 mV Step Response, G = –2
REV. D
AD8002
–10–
THEORY OF OPERATION
A very simple analysis can put the operation of the AD8002, a
current feedback amplifier, in familiar terms. Being a current
feedback amplifier, the AD8002’s open-loop behavior is expressed
as transimpedance, V
O
/I
–IN
, or T
Z
. The open-loop transim-
pedance behaves just as the open-loop voltage gain of a voltage
feedback amplifier, that is, it has a large dc value and decreases
at roughly 6 dB/octave in frequency.
Since the R
IN
is proportional to 1/g
m
, the equivalent voltage
gain is just T
Z
× g
m
, where the g
m
in question is the trans-
conductance of the input stage. This results in a low open-loop
input impedance at the inverting input, a now familiar result.
Using this amplifier as a follower with gain, Figure 4, basic
analysis yields the following result.
V
VGTS
TS GR R
GR
RRg
O
IN
Z
ZIN
IN m
+
=+ =
()
()
/
1
11
2150
VOUT
R1
R2
RIN
VIN
Figure 4.
Recognizing that G × R
IN
<< R1 for low gains, it can be seen to
the first order that bandwidth for this amplifier is independent
of gain (G).
Considering that additional poles contribute excess phase at
high frequencies, there is a minimum feedback resistance below
which peaking or oscillation may result. This fact is used to
determine the optimum feedback resistance, R
F
. In practice
parasitic capacitance at the inverting input terminal will also add
phase in the feedback loop, so picking an optimum value for R
F
can be difficult.
Achieving and maintaining gain flatness of better than 0.1 dB at
frequencies above 10 MHz requires careful consideration of
several issues.
Choice of Feedback and Gain Resistors
The fine scale gain flatness will, to some extent, vary with
feedback resistance. It, therefore, is recommended that once
optimum resistor values have been determined, 1% tolerance
values should be used if it is desired to maintain flatness over a
wide range of production lots. In addition, resistors of different
construction have different associated parasitic capacitance
and inductance. Surface mount resistors were used for the bulk
of the characterization for this data sheet. It is not recommended
that leaded components be used with the AD8002.
Printed Circuit Board Layout Considerations
As expected for a wideband amplifier, PC board parasitics can
affect the overall closed-loop performance. Of concern are
stray capacitances at the output and the inverting input nodes. If
a ground plane is to be used on the same side of the board as
the signal traces, a space (5 mm min) should be left around the
signal lines to minimize coupling. Additionally, signal lines
connecting the feedback and gain resistors should be short
enough so that their associated inductance does not cause high
frequency gain errors. Line lengths on the order of less than
5 mm are recommended. If long runs of coaxial cable are being
driven, dispersion and loss must be considered.
Power Supply Bypassing
Adequate power supply bypassing can be critical when optimiz-
ing the performance of a high-frequency circuit. Inductance in
the power supply leads can form resonant circuits that produce
peaking in the amplifiers response. In addition, if large current
transients must be delivered to the load, bypass capacitors
(typically greater than 1 µF) will be required to provide the
best settling time and lowest distortion. A parallel combina-
tion of 4.7 µF and 0.1 µF is recommended. Some brands of
electrolytic capacitors will require a small series damping resis-
tor 4.7 for optimum results.
DC Errors and Noise
There are three major noise and offset terms to consider in a
current feedback amplifier. For offset errors, refer to the equa-
tion below. For noise error, the terms are root-sum-squared to
give a net output error. In the circuit shown in Figure 5 they
are input offset (V
IO
), which appears at the output multiplied by
the noise gain of the circuit (1 + R
F
/R
I
), noninverting input
current (I
BN
× R
N
), also multiplied by the noise gain, and the
inverting input current, which, when divided between R
F
and R
I
and subsequently multiplied by the noise gain, always appears
at the output as I
BN
× R
F
. The input voltage noise of the AD8002
is a low 2 nV/Hz. At low gains, though, the inverting input
current noise times R
F
is the dominant noise source. Careful
layout and device matching contribute to better offset and
drift specifications for the AD8002 compared to many other
current feedback amplifiers. The typical performance curves in
conjunction with the equations below can be used to predict the
performance of the AD8002 in any application.
VV R
R
IR R
R
IR
OUT IO
F
I
BN N
F
I
BI F
+
±××+
±×11
R
F
R
I
R
N
I
BN
V
OUT
I
BI
Figure 5. Output Offset Voltage
REV. D
AD8002
–11–
Driving Capacitive Loads
The AD8002 was designed primarily to drive nonreactive loads.
If driving loads with a capacitive component is desired, best
frequency response is obtained by the addition of a small series
resistance as shown in Figure 6.
909
RSERIES
RL
500
IN
CL
Figure 6. Driving Capacitive Loads
Figure 7 shows the optimum value for R
SERIES
versus capacitive
load. It is worth noting that the frequency response of the circuit
when driving large capacitive loads will be dominated by the
passive roll-off of R
SERIES
and C
L
.
40
0
025
30
10
5
20
15 2010
R
SERIES
V
C
L
pF
Figure 7. Recommended R
SERIES
vs. Capacitive Load
Communications
Distortion is a key specification in communications applications.
Intermodulation distortion (IMD) is a measure of the ability of
an amplifier to pass complex signals without the generation of
spurious harmonics. The third order products are usually the
most problematic since several of them fall near the fundamen-
tals and do not lend themselves to filtering. Theory predicts that
the third order harmonic distortion components increase in
power at three times the rate of the fundamental tones. The
specification of third order intercept as the virtual point where
fundamental and harmonic power are equal is one standard mea-
sure of distortion performance. Op amps used in closed-loop
applications do not always obey this simple theory. At a gain of
two, the AD8002 has performance summarized in Figure 8. Here
the worst third order products are plotted versus. input power.
The third order intercept of the AD8002 is 33 dBm at 10 MHz.
80
37
75
2104562
70
65
60
55
50
45
1
THIRD ORDER IMD dBc
INPUT POWER dBm
68453
2F
2
F
1
2F
1
F
2
G = +2
F
1
= 10MHz
F
2
= 12MHz
Figure 8. Third Order IMD; F
1
= 10 MHz, F
2
= 12 MHz
Operation as a Video Line Driver
The AD8002 has been designed to offer outstanding perfor-
mance as a video line driver. The important specifications of
differential gain (0.01%) and differential phase (0.02°) meet the
most exacting HDTV demands for driving one video load with
each amplifier. The AD8002 also drives four back-terminated
loads (two each), as shown in Figure 9, with equally impressive
performance (0.01%, 0.07°). Another important consideration
is isolation between loads in a multiple load application. The
AD8002 has more than 40 dB of isolation at 5 MHz when driv-
ing two 75 back-terminated loads.
750
750
75
CABLE
75
75
VOUT #1
VOUT #2
+VS
VS
VIN
0.1F
4.7F
1/2
AD8002
0.1F
4.7F
75
CABLE
75
75
75
CABLE
75
75
VOUT #3
VOUT #4
75
CABLE
75
75
1/2
AD8002
750
750
75
CABLE
75
+
Figure 9. Video Line Driver
REV. D
AD8002
–12–
Driving A-to-D Converters
The AD8002 is well suited for driving high-speed analog-to-
digital converters such as the AD9058. The AD9058 is a dual
8-bit 50 MSPS ADC. In Figure 10, the AD8002 is shown driv-
ing the inputs of the AD9058 which are configured for 0 V to 2 V
ranges. Bipolar input signals are buffered, amplified (2×), and
offset (by 1.0 V) into the proper input range of the ADC. Using
0.1F
+VS
VS
20
50
1k
18
17
16
15
14
13
12
11
VREF A
10pF
CLOCK
5, 9, 22,
24, 37, 41
4,19, 21 25, 27, 42
0.1F
38
8
VREF B
6
+VINT
2
3+VREF A
AIN A
549
274
ANALOG
IN A
0.5V
1.1k
AD707
43 +VREF B
20k
0.1F
2V
1.1k
20k
549
ANALOG
IN B
0.5V
274
20
0.1F
40
COMP
1
AIN B
ENCODE A ENCODE B
10 36
ENCODE 74ACT04
0.1F
+5V
28
29
30
31
32
33
34
35
RZ1
RZ2
D0A (LSB)
D7A (MSB)
D0B (LSB)
D7B (MSB)
7, 20,
26, 39 5V
1N4001
AD9058
(J-LEAD)
RZ1, RZ2 = 2,000 SIP (8-PKG)
74ACT 273 74ACT 273
8
8
1/2
AD8002
1/2
AD8002
50
50
Figure 10. AD8002 Driving a Dual A-to-D Converter
the AD9058s internal 2 V reference connected to both ADCs
as shown in Figure 10 reduces the number of external compo-
nents required to create a complete data acquisition system. The
20 resistors in series with ADC inputs are used to help the
AD8002s drive the 10 pF ADC input capacitance. The AD8002
adds only 100 mW to the power consumption, while not limit-
ing the performance of the circuit.
REV. D
AD8002
–13–
Single-Ended-to-Differential Driver Using an AD8002
The two halves of an AD8002 can be configured to create a
single-ended-to-differential high-speed driver with a 3dB
bandwidth in excess of 200 MHz, as shown in Figure 11. Although
the individual op amps are each current feedback, the overall
architecture yields a circuit with attributes normally associated
with voltage feedback amplifiers, while offering the speed advan-
tages inherent in current feedback amplifiers. In addition, the gain
of the circuit can be changed by varying a single resistor, R
F
,
which is often not possible in a dual op amp differential driver.
50
OUTPUT #1
50
OUTPUT #2
R
G
511
R
F
511
C
C
0.51.5pF
1/2
AD8002
1/2
AD8002
OP AMP #1
OP AMP #2
V
IN
R
A
511
R
A
511
511
R
B
511
R
B
Figure 11. Differential Line Driver
The current feedback nature of the op amps, in addition to
enabling the wide bandwidth, provides an output drive of more
than 3 V p-p into a 20 load for each output at 20 MHz. On the
other hand, the voltage feedback nature provides symmetrical
high impedance inputs and allows the use of reactive compo-
nents in the feedback network.
The circuit consists of the two op amps, each configured as a
unity gain follower by the 511 R
A
feedback resistors between
each op amps output and inverting input. The output of each op
amp has a 511 R
B
resistor to the inverting input of the other
op amp. Thus, each output drives the other op amp through a
unity gain inverter configuration. By connecting the two amplifi-
ers as cross-coupled inverters, their outputs are freed to be equal
and opposite, assuring zero-output common-mode voltage.
With this circuit configuration, the common-mode signal of the
outputs is reduced. If one output moves slightly higher, the nega-
tive input to the other op amp drives its output to go slightly
lower and thus preserves the symmetry of the complementary
outputs, which reduces the common-mode signal. The common-
mode output signal was measured to be 50 dB at 1 MHz.
Looking at this configuration overall, there are two high imped-
ance inputs (the + inputs of each op amp), two low impedance
outputs, and high open-loop gain. If we consider the two nonin-
verting inputs and just the output of Op Amp #2, the structure
looks like a voltage feedback op amp having two symmetrical,
high-impedance inputs, and one output. The +input to Op Amp
#2 is the noninverting input (it has the same polarity as Output
#2) and the +input to Amplifier #1 is the inverting input (oppo-
site polarity of Output #2).
With a feedback resistor R
F
, an input resistor R
G
, and grounding
of the +input of Op Amp #2, a feedback amplifier is formed.
This configuration is just like a voltage feedback amplifier in an
inverting configuration if only Output #2 is considered. The
addition of Output #1 makes the amplifier differential output.
The differential gain of this circuit is:
GR
R
R
R
F
G
A
B
+
1
The R
F
/R
G
term is the gain of the overall op amp configuration
and is the same as for an inverting op amp except for the polarity.
If Output #1 is used as the output reference, the gain is posi-
tive. The 1 + R
A
/R
B
term is the noise gain of each individual op
amp in its noninverting configuration.
The resulting architecture offers several advantages. First, the gain
can be changed by changing a single resistor. Changing either
R
F
or R
G
will change the gain as in an inverting op amp circuit.
For most types of differential circuits, more than one resistor
must be changed to change gain and still maintain good CMR.
Reactive elements can be used in the feedback network. This is
in contrast to current feedback amplifiers that restrict the use of
reactive elements in the feedback. The circuit described requires
about 0.9 pF of capacitance in shunt across R
F
in order to optimize
peaking and realize a 3 dB bandwidth of more than 200 MHz.
The peaking exhibited by the circuit is very sensitive to the value
of this capacitor. Parasitics in the board layout on the order of
tenths of picofarads will influence the frequency response and
the value required for the feedback capacitor, so a good lay-
out is essential.
The shunt capacitor type selection is also critical. A good micro-
wave type chip capacitor with high Q was found to yield best
performance. The part selected for this circuit was a muRata
Erie part number MA280R9B.
The distortion was measured at 20 MHz with a 3 V p-p input
and a 100 load on each output. For Output #1 the distortion
is 37 dBc and 41 dBc for the second and third harmonics
respectively. For Output #2 the second harmonic is 35 dBc
and the third harmonic is 43 dBc.
6
4
14
1M 10M 1G100M
6
8
10
12
2
0
2
4
OUTPUT dB
FREQUENCY Hz
C
C
= 0.9pF
OUT+
OUT
Figure 12. Differential Driver Frequency Response
REV. D
AD8002
–14–
Table I. Recommended Component Values
AD8002AN (DIP) AD8002AR (SOIC)
Gain Gain
Component –10 –2 –1 +1 +2 +10 +100 –10 –2 –1 +1 +2 +10 +100
R
F
() 499 549 576 1210 750 499 1000 499 499 549 953 681 499 1000
R
G
() 49.9 274 576 750 54.9 10 49.9 249 549 681 54.9 10
R
BT
(Nominal) () 49.9 49.9 49.9 49.9 49.9 49.9 49.9 49.9 49.9 49.9 49.9 49.9 49.9 49.9
R
C
()*75 75 0 0 75 75 0 0
R
S
() 49.9 49.9 49.9 49.9 49.9 49.9
R
T
(Nominal) ()61.9 54.9 49.9 49.9 49.9 49.9 61.9 54.9 49.9 49.9 49.9 49.9
Small Signal BW (MHz) 270 380 410 600 500 170 17 250 410 410 600 500 170 17
0.1 dB Flatness (MHz) 45 80 130 35 60 24 3 50 100 100 35 90 24 3
AD8002ARM (SOIC)
Gain
Component –10 –2 –1 +1 +2 +10 +100
R
F
() 499 499 590 1000 681 499 1000
R
G
() 49.9 249 590 681 54.9 10
R
BT
(Nominal) () 49.9 49.9 49.9 49.9 49.9 49.9 49.9
R
C
()*75 75 0 0
R
S
() 49.9 49.9 49.9
R
T
(Nominal) ()61.9 49.9 49.9 49.9 49.9 49.9
Small Signal BW (MHz) 270 400 410 600 450 170 19
0.1 dB Flatness (MHz) 60 100 100 35 70 35 3
*R
C
is recommended to reduce peaking, and minimizes input reflections at frequencies above 300 MHz. However, R
C
is not required.
Layout Considerations
The specified high-speed performance of the AD8002 requires
careful attention to board layout and component selection.
Proper R
F
design techniques and low parasitic component selec-
tion are mandatory.
The PCB should have a ground plane covering all unused por-
tions of the component side of the board to provide a low
impedance ground path. The ground plane should be removed
from the area near the input pins to reduce stray capacitance.
Chip capacitors should be used for supply bypassing (see Figure
13). One end should be connected to the ground plane and the
other within 1/8 in. of each power pin. An additional large tanta-
lum electrolytic capacitor (4.7 µF10 µF) should be connected in
parallel, but not necessarily so close, to supply current for fast,
large-signal changes at the output.
The feedback resistor should be located close to the inverting
input pin in order to keep the stray capacitance at this node to a
minimum. Capacitance variations of less than 1 pF at the invert-
ing input will significantly affect high-speed performance.
Stripline design techniques should be used for long signal traces
(greater than about 1 in.). These should be designed with a
characteristic impedance of 50 or 75 and be properly termi-
nated at each end.
Inverting Configuration
Supply Bypassing
Noninverting Configuration
R
F
R
BT
IN
+V
S
V
S
R
S
R
T
R
G
OUT
C1
0.1F
C3
10F
C2
0.1F
C4
10F
+V
S
V
S
R
F
R
BT
IN
+V
S
V
S
R
T
R
G
OUT
*R
C
*SEE TABLE I
Figure 13. Inverting and Noninverting Configurations
REV. D
AD8002
–15–
Figure 14. Board Layout (Silkscreen)
REV. D
AD8002
–16–
Figure 15. Board Layout (Component Layer)
REV. D
AD8002
–17–
Figure 16. Board Layout (Solder Side) (Looking through the Board)
REV. D
AD8002
–18–
OUTLINE DIMENSIONS
Dimensions shown in inches and (mm).
8-Lead Plastic DIP (N-8)
SEATING
PLANE
0.060 (1.52)
0.015 (0.38)
0.210
(5.33)
MAX
0.022 (0.558)
0.014 (0.356)
0.160 (4.06)
0.115 (2.93)
0.070 (1.77)
0.045 (1.15)
0.130
(3.30)
MIN
8
14
5
PIN 1
0.280 (7.11)
0.240 (6.10)
0.100 (2.54)
BSC
0.430 (10.92)
0.348 (8.84)
0.195 (4.95)
0.115 (2.93)
0.015 (0.381)
0.008 (0.204)
0.325 (8.25)
0.300 (7.62)
8-Lead SOIC (SO-8)
85
41
0.1968 (5.00)
0.1890 (4.80)
0.2440 (6.20)
0.2284 (5.80)
PIN 1
0.1574 (4.00)
0.1497 (3.80)
0.0500 (1.27)
BSC
0.0688 (1.75)
0.0532 (1.35)
SEATING
PLANE
0.0098 (0.25)
0.0040 (0.10)
0.0192 (0.49)
0.0138 (0.35) 0.0098 (0.25)
0.0075 (0.19)
0.0500 (1.27)
0.0160 (0.41)
8
0
0.0196 (0.50)
0.0099 (0.25) 45
8-Lead SOIC (RM-8)
0.011 (0.28)
0.003 (0.08)
0.028 (0.71)
0.016 (0.41)
33
27
0.120 (3.05)
0.112 (2.84)
85
4
1
0.122 (3.10)
0.114 (2.90)
0.199 (5.05)
0.187 (4.75)
PIN 1
0.0256 (0.65) BSC
0.122 (3.10)
0.114 (2.90)
SEATING
PLANE
0.006 (0.15)
0.002 (0.05)
0.018 (0.46)
0.008 (0.20)
0.043 (1.09)
0.037 (0.94)
0.120 (3.05)
0.112 (2.84)
REV. D
AD8002
–19–
Location Page
Data Sheet changed from REV. C to REV. D.
MAX RATINGS changed . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
Revision History
–20–
C01044b–0–4/01(D)
PRINTED IN U.S.A.