S E M I C O N D U C T O R MUR810, MUR815, MUR820, RURP810, RURP815, RURP820 8A, 100V - 200V Ultrafast Diodes June 1995 Features * * * * * Package Ultrafast with Soft Recovery . . . . . . . . . . . . . . . . . . . . . .<25ns Operating Temperature . . . . . . . . . . . . . . . . . . . . . . . . .+175oC Reverse Voltage Up To . . . . . . . . . . . . . . . . . . . . . . . . . . .200V Avalanche Energy Rated Planar Construction JEDEC TO-220AC ANODE CATHODE CATHODE (FLANGE) Applications * Switching Power Supplies * Power Switching Circuits * General Purpose Description Symbol MUR810, MUR815, MUR820, RURP810, RURP815 and RURP820 are ultrafast diodes with soft recovery characteristics (tRR < 25ns). They have low forward voltage drop and are silicon nitride passivated ion-implanted epitaxial planar construction. K These devices are intended for use as freewheeling/clamping diodes and rectifiers in a variety of switching power supplies and other power switching applications. Their low stored charge and ultrafast soft recovery minimize ringing and electrical noise in many power switching circuits reducing power loss in the switching transistors. A PACKAGING AVAILABILITY PART NUMBER PACKAGE BRAND MUR810 TO-220AC MUR810 MUR815 TO-220AC MUR815 MUR820 TO-220AC MUR820 RURP810 TO-220AC RURP810 RURP815 TO-220AC RURP815 RURP820 TO-220AC RURP820 NOTE: When ordering, use the entire part number. Formerly developmental type TA09223. Absolute Maximum Ratings TC = +25oC, Unless Otherwise Specified Peak Repetitive Reverse Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . VRRM Working Peak Reverse Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VRWM DC Blocking Voltage. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .VR Average Rectified Forward Current . . . . . . . . . . . . . . . . . . . . . . . . . . . IF(AV) (TC = +157oC) Repetitive Peak Surge Current. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . IFSM (Square Wave, 20kHz) Nonrepetitive Peak Surge Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . IFSM (Halfwave, 1 Phase, 60Hz) Maximum Power Dissipation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .PD Avalanche Energy (See Figures 10 and 11) . . . . . . . . . . . . . . . . . . . . . EAVL Operating and Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . TSTG, TJ Copyright (c) Harris Corporation 1995 MUR810 RURP810 100 100 100 8 MUR815 RURP815 150 150 150 8 MUR820 RURP820 200 200 200 8 UNITS V V V A 16 16 16 A 100 100 100 A 50 20 -65 to +175 50 20 -65 to +175 50 20 -65 to +175 W mJ oC File Number 5-5 1355.4 Specifications MUR810, MUR815, MUR820, RURP810, RURP815, RURP820 TC = +25oC, Unless Otherwise Specified Electrical Specifications MUR810, RURP810 SYMBOL TEST CONDITION VF IF = 8A, TC = MUR815, RURP815 MUR820, RURP820 MIN TYP MAX MIN TYP MAX MIN TYP MAX UNITS - - 0.975 - - 0.975 - - 0.975 V +25oC o IF = 8A, TC = +150 C - - 0.895 - - 0.895 - - 0.895 V o - - 100 - - - - - - A o VR = 150V, TC = +25 C - - - - - 100 - - - A VR = 200V, TC = +25oC - - - - - - - - 100 A VR = 100V, TC = +150oC - - 500 - - - - - - A VR = 150V, TC = +150oC - - - - - 500 - - - A VR = 200V, TC = +150oC - - - - - - - - 500 A IF = 1A, dIF/dt = 200A/s - - 25 - - 25 - - 25 ns IF = 8A, dIF/dt = 200A/s - - 30 - - 30 - - 30 ns tA IF = 8A, dIF/dt = 200A/s - 13 - - 13 - - 13 - ns tB IF = 8A, dIF/dt = 200A/s - 5 - - 5 - - 5 - ns QRR IF = 8A, dIF/dt = 200A/s - 25 - - 25 - - 25 - nC VR = 10V, IF = 0A - 60 - - 60 - - 60 - pF 3 oC/W IR VR = 100V, TC = +25 C IR tRR CJ RJC - - 3 - - 3 - - DEFINITIONS VF = Instantaneous forward voltage (pw = 300s, D = 2%). IR = Instantaneous reverse current . tRR = Reverse recovery time (See Figure 2), summation of tA + tB. tA = Time to reach peak reverse current (See Figure 2). tB = Time from peak IRM to projected zero crossing of IRM based on a straight line from peak IRM through 25% of IRM (See Figure 2). QRR = Reverse recovery charge. CJ = Junction Capacitance. RJC = Thermal resistance junction to case. EAVL = Controlled Avalanche Energy (See Figures 10 and 11). pw = pulse width. D = duty cycle. V1 AMPLITUDE CONTROLS IF V2 AMPLITUDE CONTROLS dIF/dt L1 = SELF INDUCTANCE OF R4 + LLOOP R1 +V3 t1 5tA(MAX) t2 > tRR t3 > 0 L1 tA(MIN) R4 10 Q2 Q1 +V1 0 IF LLOOP t2 R2 t1 dIF dt tRR tA tB 0 DUT Q4 0.25 IRM t3 IRM C1 0 R4 VR Q3 -V2 R3 -V4 VRM FIGURE 1. tRR TEST CIRCUIT FIGURE 2. tRR WAVEFORMS AND DEFINITIONS 5-6 MUR810, MUR815, MUR820, RURP810, RURP815, RURP820 Typical Performance Curves 100 IR , REVERSE CURRENT (A) IF , FORWARD CURRENT (A) 40 10 +100oC +175oC +25oC 1 +175oC 10 1 +100oC 0.1 0.01 +25oC 0.5 0.001 0 0.6 0.4 0.2 0.8 1.2 1 0 1.4 30 tRR 12 TC = +100oC, dIF /dt = 200A/s 35 t, RECOVERY TIMES (ns) t, RECOVERY TIMES (ns) FIGURE 4. TYPICAL REVERSE CURRENT vs REVERSE VOLTAGE TC = +25oC, dIF /dt = 200A/s 16 200 VR , REVERSE VOLTAGE (V) FIGURE 3. TYPICAL FORWARD CURRENT vs FORWARD VOLTAGE DROP 20 150 100 50 VF , FORWARD VOLTAGE (V) tA 8 tB 25 tRR 20 tA 15 10 tB 4 5 0 0.5 4 1 0 8 0.5 IF(AV) , AVERAGE FORWARD CURRENT (A) t, RECOVERY TIMES (ns) FIGURE 6. TYPICAL tRR, tA AND tB CURVES vs FORWARD CURRENT AT +100oC TC = +175oC, dIF /dt = 200A/s 40 tRR 30 tA 20 10 0 tB 0.5 4 1 8 IF , FORWARD CURRENT (A) FIGURE 5. TYPICAL tRR, tA AND tB CURVES vs FORWARD CURRENT AT +25oC 50 4 1 IF , FORWARD CURRENT (A) 8 IF , FORWARD CURRENT (A) 8 DC 6 SQ. WAVE 4 2 0 140 145 150 155 160 165 170 175 TC , CASE TEMPERATURE (oC) FIGURE 7. TYPICAL tRR, tA AND tB CURVES vs FORWARD CURRENT AT +175oC FIGURE 8. CURRENT DERATING CURVE FOR ALL TYPES 5-7 MUR810, MUR815, MUR820, RURP810, RURP815, RURP820 Typical Performance Curves (Continued) CJ , JUNCTION CAPACITANCE (pF) 150 125 100 75 50 25 0 0 50 150 100 VR , REVERSE VOLTAGE (V) 200 FIGURE 9. TYPICAL JUNCTION CAPACITANCE vs REVERSE VOLTAGE Test Circuit and Waveforms IMAX = 1A L = 40mH R < 0.1 EAVL = 1/2LI2 [VAVL/(VAVL - VDD)] Q1 AND Q2 ARE 1000V MOSFETs Q1 130 L R + VDD 1M DUT 12V VAVL Q2 130 CURRENT SENSE IL IL I V VDD 12V t0 FIGURE 10. AVALANCHE ENERGY TEST CIRCUIT t1 t2 FIGURE 11. AVALANCHE CURRENT AND VOLTAGE WAVEFORMS 5-8 t